DE1073632B - Drift-Transistor mit einer Zonenfolge P-N-P bzw. N-P-N und Verfahren zu seiner Herstellung - Google Patents

Drift-Transistor mit einer Zonenfolge P-N-P bzw. N-P-N und Verfahren zu seiner Herstellung

Info

Publication number
DE1073632B
DE1073632B DENDAT1073632D DE1073632DA DE1073632B DE 1073632 B DE1073632 B DE 1073632B DE NDAT1073632 D DENDAT1073632 D DE NDAT1073632D DE 1073632D A DE1073632D A DE 1073632DA DE 1073632 B DE1073632 B DE 1073632B
Authority
DE
Germany
Prior art keywords
zone
semiconductor
compound
impurity element
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DENDAT1073632D
Other languages
German (de)
English (en)
Inventor
Princeton N. J. Dietrich Alfred Jenny (V. St. A.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of DE1073632B publication Critical patent/DE1073632B/de
Pending legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P10/12—
    • H10P50/646—
    • H10P50/691—

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Bipolar Transistors (AREA)
  • Recrystallisation Techniques (AREA)
DENDAT1073632D 1956-06-18 Drift-Transistor mit einer Zonenfolge P-N-P bzw. N-P-N und Verfahren zu seiner Herstellung Pending DE1073632B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US591824A US2846340A (en) 1956-06-18 1956-06-18 Semiconductor devices and method of making same

Publications (1)

Publication Number Publication Date
DE1073632B true DE1073632B (de) 1960-01-21

Family

ID=24368099

Family Applications (1)

Application Number Title Priority Date Filing Date
DENDAT1073632D Pending DE1073632B (de) 1956-06-18 Drift-Transistor mit einer Zonenfolge P-N-P bzw. N-P-N und Verfahren zu seiner Herstellung

Country Status (6)

Country Link
US (1) US2846340A (enExample)
BE (1) BE558436A (enExample)
DE (1) DE1073632B (enExample)
FR (1) FR1176057A (enExample)
GB (1) GB867413A (enExample)
NL (2) NL111788C (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1211336B (de) * 1960-02-12 1966-02-24 Shindengen Electric Mfg Halbleitergleichrichter mit zwei Schichten von verschiedenem spezifischem Widerstand
DE2847451A1 (de) * 1978-11-02 1980-06-04 Licentia Gmbh Halbleiterbauelement

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3211970A (en) * 1957-05-06 1965-10-12 Rca Corp Semiconductor devices
NL121250C (enExample) * 1958-01-16
FR1193194A (fr) * 1958-03-12 1959-10-30 Perfectionnements aux procédés de fabrication par diffusion des transistors et des redresseurs à jonctions
US3132057A (en) * 1959-01-29 1964-05-05 Raytheon Co Graded energy gap semiconductive device
DE1137140B (de) * 1959-04-06 1962-09-27 Int Standard Electric Corp Verfahren zum Herstellen von elektrischen Halbleiterbauelementen mit verminderter Oberflaechenleitfaehigkeit am p-n-UEbergang und verminderter Alterung
NL125412C (enExample) * 1959-04-15
US3005735A (en) * 1959-07-24 1961-10-24 Philco Corp Method of fabricating semiconductor devices comprising cadmium-containing contacts
US3028529A (en) * 1959-08-26 1962-04-03 Bendix Corp Semiconductor diode
US3096219A (en) * 1960-05-02 1963-07-02 Rca Corp Semiconductor devices
NL264273A (enExample) * 1960-05-02
US3070477A (en) * 1960-10-03 1962-12-25 Mandelkorn Joseph Method of making a gallium sulfide dioxide
US3139599A (en) * 1960-12-09 1964-06-30 Texas Instruments Inc Infrared detector with pn junctions in indium antimonide
US3176204A (en) * 1960-12-22 1965-03-30 Raytheon Co Device composed of different semiconductive materials
US3148094A (en) * 1961-03-13 1964-09-08 Texas Instruments Inc Method of producing junctions by a relocation process
US3210624A (en) * 1961-04-24 1965-10-05 Monsanto Co Article having a silicon carbide substrate with an epitaxial layer of boron phosphide
NL280641A (enExample) * 1961-07-07
NL280849A (enExample) * 1961-07-12 1900-01-01
US3262825A (en) * 1961-12-29 1966-07-26 Bell Telephone Labor Inc Method for etching crystals of group iii(a)-v(a) compounds and etchant used therefor
US3275539A (en) * 1962-11-09 1966-09-27 North American Phillips Compan Method of manufacturing semiconductor devices
US3239393A (en) * 1962-12-31 1966-03-08 Ibm Method for producing semiconductor articles
US3255055A (en) * 1963-03-20 1966-06-07 Hoffman Electronics Corp Semiconductor device
US3293092A (en) * 1964-03-17 1966-12-20 Ibm Semiconductor device fabrication
SE313623B (enExample) * 1965-01-30 1969-08-18 Asea Ab
US3484854A (en) * 1966-10-17 1969-12-16 Westinghouse Electric Corp Processing semiconductor materials
CN112143938B (zh) * 2020-09-25 2021-11-19 先导薄膜材料（广东）有限公司 砷化镉的制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH277131A (de) * 1948-02-26 1951-08-15 Western Electric Co Halbleiterelement zur Verstärkung elektrischer Signale.
FR1098372A (fr) * 1953-05-22 1955-07-25 Rca Corp Dispositifs semi-conducteurs

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB707008A (en) * 1948-10-01 1954-04-07 Licentia Gmbh Electric un-symmetrically conductive systems, particularly dry-plate rectifiers
US2759861A (en) * 1954-09-22 1956-08-21 Bell Telephone Labor Inc Process of making photoconductive compounds

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH277131A (de) * 1948-02-26 1951-08-15 Western Electric Co Halbleiterelement zur Verstärkung elektrischer Signale.
FR1098372A (fr) * 1953-05-22 1955-07-25 Rca Corp Dispositifs semi-conducteurs

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1211336B (de) * 1960-02-12 1966-02-24 Shindengen Electric Mfg Halbleitergleichrichter mit zwei Schichten von verschiedenem spezifischem Widerstand
DE2847451A1 (de) * 1978-11-02 1980-06-04 Licentia Gmbh Halbleiterbauelement

Also Published As

Publication number Publication date
US2846340A (en) 1958-08-05
GB867413A (en) 1961-05-10
NL111788C (enExample)
BE558436A (enExample)
FR1176057A (fr) 1959-04-03
NL218192A (enExample)

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