CH277131A - Halbleiterelement zur Verstärkung elektrischer Signale. - Google Patents

Halbleiterelement zur Verstärkung elektrischer Signale.

Info

Publication number
CH277131A
CH277131A CH277131DA CH277131A CH 277131 A CH277131 A CH 277131A CH 277131D A CH277131D A CH 277131DA CH 277131 A CH277131 A CH 277131A
Authority
CH
Switzerland
Prior art keywords
semiconductor element
electrical signals
amplifying electrical
amplifying
signals
Prior art date
Application number
Other languages
English (en)
Inventor
Incorporated Western E Company
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH277131A publication Critical patent/CH277131A/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
    • H03F3/183—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H03F3/165—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices with junction-FET's
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Multimedia (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Thyristors (AREA)
CH277131D 1948-02-26 1948-10-05 Halbleiterelement zur Verstärkung elektrischer Signale. CH277131A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11168A US2524034A (en) 1948-02-26 1948-02-26 Three-electrode circuit element utilizing semiconductor materials

Publications (1)

Publication Number Publication Date
CH277131A true CH277131A (de) 1951-08-15

Family

ID=21749158

Family Applications (2)

Application Number Title Priority Date Filing Date
CH277131D CH277131A (de) 1948-02-26 1948-10-05 Halbleiterelement zur Verstärkung elektrischer Signale.
CH273525D CH273525A (de) 1948-02-26 1948-12-28 In einer elektrischen Schaltung angeordnetes Verstärkungselement.

Family Applications After (1)

Application Number Title Priority Date Filing Date
CH273525D CH273525A (de) 1948-02-26 1948-12-28 In einer elektrischen Schaltung angeordnetes Verstärkungselement.

Country Status (7)

Country Link
US (1) US2524034A (de)
BE (2) BE486170A (de)
CH (2) CH277131A (de)
DE (1) DE966492C (de)
FR (3) FR972207A (de)
GB (2) GB694021A (de)
NL (3) NL85856C (de)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1006169B (de) * 1952-02-07 1957-04-11 Siemes & Halske Ag Anordnung zur Umwandlung mechanischer in elektrische Schwingungen
DE1021488B (de) * 1954-02-19 1957-12-27 Deutsche Bundespost Halbleiter-Kristallode der Schichtenbauart
DE1073632B (de) * 1956-06-18 1960-01-21 Radio Corporation Of America, New York, N. Y. (V. St. A.) Drift-Transistor mit einer Zonenfolge P-N-P bzw. N-P-N und Verfahren zu seiner Herstellung
DE1077788B (de) * 1957-09-24 1960-03-17 Ibm Deutschland Halbleiteranordnung mit mindestens einem PN-UEbergang und einem Driftfeld
DE976718C (de) * 1955-01-08 1964-03-19 Siemens Ag Verfahren zum Anloeten elektrischer Anschluesse an eine Metallauflage, die auf einemim wesentlichen einkristallinen Halbleiter aufgebracht ist
DE1207508B (de) * 1957-08-01 1965-12-23 Siemens Ag Halbleiterbauelement mit sperrfreien Kontakt-elektroden und Verfahren zum Herstellen

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2589658A (en) * 1948-06-17 1952-03-18 Bell Telephone Labor Inc Semiconductor amplifier and electrode structures therefor
US2691750A (en) * 1948-08-14 1954-10-12 Bell Telephone Labor Inc Semiconductor amplifier
US2770762A (en) * 1949-04-01 1956-11-13 Int Standard Electric Corp Crystal triodes
BE527524A (de) * 1949-05-30
US2675509A (en) * 1949-07-26 1954-04-13 Rca Corp High-frequency response semiconductor device
US2647958A (en) * 1949-10-25 1953-08-04 Bell Telephone Labor Inc Voltage and current bias of transistors
US2877284A (en) * 1950-05-23 1959-03-10 Rca Corp Photovoltaic apparatus
NL90092C (de) * 1950-09-14 1900-01-01
US2719190A (en) * 1950-10-27 1955-09-27 Bell Telephone Labor Inc High-efficiency translating circuit
US2953730A (en) * 1952-11-07 1960-09-20 Rca Corp High frequency semiconductor devices
US2734154A (en) * 1953-07-27 1956-02-07 Semiconductor devices
NL190984A (de) * 1953-10-16
DE1047947B (de) * 1953-11-19 1958-12-31 Siemens Ag Gleichrichtende oder verstaerkende Halbleiteranordnung mit durch ein aeusseres elektrisches und/oder magnetisches Feld veraenderlichem Widerstand
BE539001A (de) * 1954-06-15
US2987659A (en) * 1955-02-15 1961-06-06 Teszner Stanislas Unipolar "field effect" transistor
US2842668A (en) * 1955-05-25 1958-07-08 Ibm High frequency transistor oscillator
US2897377A (en) * 1955-06-20 1959-07-28 Rca Corp Semiconductor surface treatments and devices made thereby
DE1166381B (de) * 1956-07-06 1964-03-26 Siemens Ag Verstaerkendes Halbleiterbauelement mit einer isolierten Steuerelektrode ueber einemin Sperrichtung vorgespannten pn-UEbergang und Verfahren zu seinem Herstellen
US2918628A (en) * 1957-01-23 1959-12-22 Otmar M Stuetzer Semiconductor amplifier
US3017548A (en) * 1958-01-20 1962-01-16 Bell Telephone Labor Inc Signal translating device
DE1292253B (de) * 1959-09-26 1969-04-10 Telefunken Patent Halbleiteranordnung
DE1175797B (de) * 1960-12-22 1964-08-13 Standard Elektrik Lorenz Ag Verfahren zum Herstellen von elektrischen Halb-leiterbauelementen
DE1212642C2 (de) * 1962-05-29 1966-10-13 Siemens Ag Halbleiterbauelement, insbesondere Mesatransistor, mit zwei moeglichst kleinflaechigen Elektroden mit parallelen Kanten und Verfahren zum Herstellen
US3298863A (en) * 1964-05-08 1967-01-17 Joseph H Mccusker Method for fabricating thin film transistors

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1251378A (en) * 1917-04-12 1917-12-25 Horace Hurm Crystalline or like detector for electric waves.
CA272437A (en) * 1925-10-22 1927-07-19 Edgar Lilienfeld Julius Electric current control mechanism
US1900018A (en) * 1928-03-28 1933-03-07 Lilienfeld Julius Edgar Device for controlling electric current
GB349584A (en) * 1928-11-27 1931-05-26 Dubilier Condenser Co 1925 Ltd A new or improved electric amplifier
AT130102B (de) * 1929-07-11 1932-11-10 Aeg Kontaktgleichrichter mit zwei durch eine Sperrschicht getrennten Metallelektroden.
US1949383A (en) * 1930-02-13 1934-02-27 Ind Dev Corp Electronic device
BE408194A (de) * 1934-03-02
FR802364A (fr) * 1935-03-09 1936-09-03 Philips Nv Système d'électrodes à conductibilité dissymétrique
GB500342A (en) * 1937-09-18 1939-02-07 British Thomson Houston Co Ltd Improvements relating to dry surface-contact electric rectifiers
BE436972A (de) * 1938-11-15
US2402661A (en) * 1941-03-01 1946-06-25 Bell Telephone Labor Inc Alternating current rectifier
US2402662A (en) * 1941-05-27 1946-06-25 Bell Telephone Labor Inc Light-sensitive electric device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1006169B (de) * 1952-02-07 1957-04-11 Siemes & Halske Ag Anordnung zur Umwandlung mechanischer in elektrische Schwingungen
DE1021488B (de) * 1954-02-19 1957-12-27 Deutsche Bundespost Halbleiter-Kristallode der Schichtenbauart
DE976718C (de) * 1955-01-08 1964-03-19 Siemens Ag Verfahren zum Anloeten elektrischer Anschluesse an eine Metallauflage, die auf einemim wesentlichen einkristallinen Halbleiter aufgebracht ist
DE1073632B (de) * 1956-06-18 1960-01-21 Radio Corporation Of America, New York, N. Y. (V. St. A.) Drift-Transistor mit einer Zonenfolge P-N-P bzw. N-P-N und Verfahren zu seiner Herstellung
DE1207508B (de) * 1957-08-01 1965-12-23 Siemens Ag Halbleiterbauelement mit sperrfreien Kontakt-elektroden und Verfahren zum Herstellen
DE1077788B (de) * 1957-09-24 1960-03-17 Ibm Deutschland Halbleiteranordnung mit mindestens einem PN-UEbergang und einem Driftfeld

Also Published As

Publication number Publication date
BE484779A (de)
US2524034A (en) 1950-10-03
BE486170A (de)
FR975245A (fr) 1951-03-02
NL84054C (de)
NL85857C (de)
GB694023A (en) 1953-07-15
GB694021A (en) 1953-07-15
FR972207A (fr) 1951-01-26
FR978836A (fr) 1951-04-18
DE966492C (de) 1957-08-14
NL85856C (de)
CH273525A (de) 1951-02-15

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