BE484779A - - Google Patents

Info

Publication number
BE484779A
BE484779A BE484779DA BE484779A BE 484779 A BE484779 A BE 484779A BE 484779D A BE484779D A BE 484779DA BE 484779 A BE484779 A BE 484779A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE484779A publication Critical patent/BE484779A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/181Low-frequency amplifiers, e.g. audio preamplifiers
    • H03F3/183Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H03F3/165Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices with junction-FET's
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Multimedia (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Thyristors (AREA)
BE484779D 1948-02-26 BE484779A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11168A US2524034A (en) 1948-02-26 1948-02-26 Three-electrode circuit element utilizing semiconductor materials

Publications (1)

Publication Number Publication Date
BE484779A true BE484779A (xx)

Family

ID=21749158

Family Applications (2)

Application Number Title Priority Date Filing Date
BE484779D BE484779A (xx) 1948-02-26
BE486170D BE486170A (xx) 1948-02-26

Family Applications After (1)

Application Number Title Priority Date Filing Date
BE486170D BE486170A (xx) 1948-02-26

Country Status (7)

Country Link
US (1) US2524034A (xx)
BE (2) BE486170A (xx)
CH (2) CH277131A (xx)
DE (1) DE966492C (xx)
FR (3) FR972207A (xx)
GB (2) GB694021A (xx)
NL (3) NL85856C (xx)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2589658A (en) * 1948-06-17 1952-03-18 Bell Telephone Labor Inc Semiconductor amplifier and electrode structures therefor
US2691750A (en) * 1948-08-14 1954-10-12 Bell Telephone Labor Inc Semiconductor amplifier
US2770762A (en) * 1949-04-01 1956-11-13 Int Standard Electric Corp Crystal triodes
BE527524A (xx) * 1949-05-30
US2675509A (en) * 1949-07-26 1954-04-13 Rca Corp High-frequency response semiconductor device
US2647958A (en) * 1949-10-25 1953-08-04 Bell Telephone Labor Inc Voltage and current bias of transistors
US2877284A (en) * 1950-05-23 1959-03-10 Rca Corp Photovoltaic apparatus
NL90092C (xx) * 1950-09-14 1900-01-01
US2719190A (en) * 1950-10-27 1955-09-27 Bell Telephone Labor Inc High-efficiency translating circuit
DE1006169B (de) * 1952-02-07 1957-04-11 Siemes & Halske Ag Anordnung zur Umwandlung mechanischer in elektrische Schwingungen
US2953730A (en) * 1952-11-07 1960-09-20 Rca Corp High frequency semiconductor devices
US2734154A (en) * 1953-07-27 1956-02-07 Semiconductor devices
NL190984A (xx) * 1953-10-16
DE1047947B (de) * 1953-11-19 1958-12-31 Siemens Ag Gleichrichtende oder verstaerkende Halbleiteranordnung mit durch ein aeusseres elektrisches und/oder magnetisches Feld veraenderlichem Widerstand
DE1021488B (de) * 1954-02-19 1957-12-27 Deutsche Bundespost Halbleiter-Kristallode der Schichtenbauart
BE539001A (xx) * 1954-06-15
DE976718C (de) * 1955-01-08 1964-03-19 Siemens Ag Verfahren zum Anloeten elektrischer Anschluesse an eine Metallauflage, die auf einemim wesentlichen einkristallinen Halbleiter aufgebracht ist
US2987659A (en) * 1955-02-15 1961-06-06 Teszner Stanislas Unipolar "field effect" transistor
US2842668A (en) * 1955-05-25 1958-07-08 Ibm High frequency transistor oscillator
US2897377A (en) * 1955-06-20 1959-07-28 Rca Corp Semiconductor surface treatments and devices made thereby
NL218192A (xx) * 1956-06-18
DE1166381B (de) * 1956-07-06 1964-03-26 Siemens Ag Verstaerkendes Halbleiterbauelement mit einer isolierten Steuerelektrode ueber einemin Sperrichtung vorgespannten pn-UEbergang und Verfahren zu seinem Herstellen
US2918628A (en) * 1957-01-23 1959-12-22 Otmar M Stuetzer Semiconductor amplifier
DE1207508B (de) * 1957-08-01 1965-12-23 Siemens Ag Halbleiterbauelement mit sperrfreien Kontakt-elektroden und Verfahren zum Herstellen
US3111611A (en) * 1957-09-24 1963-11-19 Ibm Graded energy gap semiconductor devices
US3017548A (en) * 1958-01-20 1962-01-16 Bell Telephone Labor Inc Signal translating device
DE1292253B (de) * 1959-09-26 1969-04-10 Telefunken Patent Halbleiteranordnung
DE1175797B (de) * 1960-12-22 1964-08-13 Standard Elektrik Lorenz Ag Verfahren zum Herstellen von elektrischen Halb-leiterbauelementen
DE1212642C2 (de) * 1962-05-29 1966-10-13 Siemens Ag Halbleiterbauelement, insbesondere Mesatransistor, mit zwei moeglichst kleinflaechigen Elektroden mit parallelen Kanten und Verfahren zum Herstellen
US3298863A (en) * 1964-05-08 1967-01-17 Joseph H Mccusker Method for fabricating thin film transistors

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1251378A (en) * 1917-04-12 1917-12-25 Horace Hurm Crystalline or like detector for electric waves.
CA272437A (en) * 1925-10-22 1927-07-19 Edgar Lilienfeld Julius Electric current control mechanism
US1900018A (en) * 1928-03-28 1933-03-07 Lilienfeld Julius Edgar Device for controlling electric current
GB349584A (en) * 1928-11-27 1931-05-26 Dubilier Condenser Co 1925 Ltd A new or improved electric amplifier
AT130102B (de) * 1929-07-11 1932-11-10 Aeg Kontaktgleichrichter mit zwei durch eine Sperrschicht getrennten Metallelektroden.
US1949383A (en) * 1930-02-13 1934-02-27 Ind Dev Corp Electronic device
BE408194A (xx) * 1934-03-02
FR802364A (fr) * 1935-03-09 1936-09-03 Philips Nv Système d'électrodes à conductibilité dissymétrique
GB500342A (en) * 1937-09-18 1939-02-07 British Thomson Houston Co Ltd Improvements relating to dry surface-contact electric rectifiers
BE436972A (xx) * 1938-11-15
US2402661A (en) * 1941-03-01 1946-06-25 Bell Telephone Labor Inc Alternating current rectifier
US2402662A (en) * 1941-05-27 1946-06-25 Bell Telephone Labor Inc Light-sensitive electric device

Also Published As

Publication number Publication date
US2524034A (en) 1950-10-03
BE486170A (xx)
CH277131A (de) 1951-08-15
FR975245A (fr) 1951-03-02
NL84054C (xx)
NL85857C (xx)
GB694023A (en) 1953-07-15
GB694021A (en) 1953-07-15
FR972207A (fr) 1951-01-26
FR978836A (fr) 1951-04-18
DE966492C (de) 1957-08-14
NL85856C (xx)
CH273525A (de) 1951-02-15

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