DE1047317B - Halbleitendes Elektrodensystem - Google Patents
Halbleitendes ElektrodensystemInfo
- Publication number
- DE1047317B DE1047317B DEN12762A DEN0012762A DE1047317B DE 1047317 B DE1047317 B DE 1047317B DE N12762 A DEN12762 A DE N12762A DE N0012762 A DEN0012762 A DE N0012762A DE 1047317 B DE1047317 B DE 1047317B
- Authority
- DE
- Germany
- Prior art keywords
- semiconducting
- electrode system
- chromium
- nickel
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910000599 Cr alloy Inorganic materials 0.000 claims description 2
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 230000005518 electrochemistry Effects 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/01005—Boron [B]
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- H01L2924/01006—Carbon [C]
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- H01L2924/01014—Silicon [Si]
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- H01L2924/01032—Germanium [Ge]
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- H01L2924/01042—Molybdenum [Mo]
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- H01L2924/01049—Indium [In]
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- H01L2924/0105—Tin [Sn]
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- H01L2924/01051—Antimony [Sb]
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- H01L2924/01072—Hafnium [Hf]
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- H01L2924/01074—Tungsten [W]
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- H01L2924/01079—Gold [Au]
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- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- ing And Chemical Polishing (AREA)
- Contacts (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
Description
Die Erfindung bezieht sich auf ein halbleitendes Elektrodensystem, welches aus einem halbleitenden
Körper, einer oder mehreren Elektroden sowie mit diesen Elektroden bereits vor einem nachfolgenden
Ätzprozeß verbundenen Stromzuleitungen besteht.
Es ist bekannt, solche Elektrodensysteme, deren halbleitender Körper z. B. aus Germanium oder Silizium
bestehen kann, nach dem Anbringen der Elektroden und der Stromzuleitungen einer Ätzbehandlung
zu unterwerfen. Da die üblichen Ätzmittel nicht nur die Oberfläche des halbleitenden Körpers, sondern
auch die der Zuleitungen chemisch angreifen, besteht die Gefahr, daß die dadurch in Lösung gehenden Elemente
die halbleitende Oberfläche beschmutzen, was einen beträchtlichen Rückgang der elektrischen Eigenschäften
eines solchen Systems zur Folge hat.
Der Erfindung liegt die Entdeckung zugrunde, daß, obzwar Chrom und Nickel von den üblichen Ätzmitteln
angegriffen werden, manche Legierungen dieser Metalle bestehen, die nicht angegriffen werden.
Nach der Erfindung besteht wenigstens eine Stromzuleitung aus einer Legierung von Chrom und Nickel,
die wenigstens einen so großen Gehalt eines jeden dieser Elemente aufweist, daß ein chemischer Angriff
bei den üblichen Ätzmitteln nicht auftritt. Die Legierung enthält vorzugsweise wenigstens 5 % eines dieser
Metalle. Eine besonders gut brauchbare Legierung enthält 20% Chrom und 80% Nickel.
Die Erfindung wird an Hand eines durch eine Zeichnung verdeutlichten Ausführungsbeispiels näher
erläutert.
Die Zeichnung ist eine schematische Darstellung eines Schnitts einer Kristalldiode.
Die Diode besteht aus einem Germanium-Einkristall 1 der η-Art mit einer Stärke von 0,5 mm und
einer Oberfläche von 3 · 3 mm. Der spezifische Widerstand beträgt z.B. 15 Ohm/cm. Der Kristall ist mittels
einer 10% Antimon enthaltenden Zinnmenge 2 auf einem vergoldeten Molybdänplättchen 3 festgelötet,
welches etwa den gleichen Ausdehnungskoeffizienten wie Germanium besitzt. Auf der Oberseite des Kristalls
ist eine aus Indium bestehende sogenannte Legierungselektrode 4 aufgeschmolzen. Eine aus einer
Legierung von 20% Chrom und 80% Nickel bestehende Zuleitung 5 ist in der Elektrode 4 befestigt.
Im allgemeinen braucht man selbstverständlich Stromzuleitungen nur aus einer solchen Legierung
Halbleitendes Elektrodensystem
Anmelder:
N. V. Philips' Gloeilampenfabrieken,
Eindhoven (Niederlande)
Eindhoven (Niederlande)
Vertreter: Dr. rer. nat. P. Roßbach, Patentanwalt,
Hamburg 1, Mönckebergstr. 7
Hamburg 1, Mönckebergstr. 7
Beanspruchte Priorität:
Niederlande vom 29. September 1955
Niederlande vom 29. September 1955
Hans Karl Becherer, Hamburg,
ist als Erfinder genannt worden
ist als Erfinder genannt worden
herzustellen, insoweit sie mit der Ätzflüssigkeit in Berührung kommen.
Claims (3)
1. Halbleitendes Elektrodensystem, welches aus einem halbleitenden Körper, einer oder mehreren
Elektroden, sowie mit diesen Elektroden bereits vor einem nachfolgenden Ätzprozeß verbundenen
Stromzuleitungen besteht, dadurch gekennzeichnet, daß wenigstens eine Stromzuleitung aus
einer Legierung von Chrom und Nickel besteht, die wenigstens einen so großen Gehalt eines jeden
dieser Elemente aufweist, daß ein chemischer Angriff in den üblichen Ätzmitteln nicht auftritt.
2. Halbleitendes Elektrodensystem nach Anspruch 1, dadurch gekennzeichnet, daß die Legierung
wenigstens 5% Chrom oder 5% Nickel enthält.
3. Halbleitend.es Elektrodensystem nach Anspruch 2, dadurch gekennzeichnet, daß die Legierung
20% Chrom und 80% Nickel enthält.
In Betracht gezogene Druckschriften:
Deutsche Patentschrift Nr. 840 407;
USA.-Patentschrift Nr. 2 588 956;
Zeitschrift für Elektrochemie, Bd. 58 (1954), H. 5, S. 283 bis 321.
Deutsche Patentschrift Nr. 840 407;
USA.-Patentschrift Nr. 2 588 956;
Zeitschrift für Elektrochemie, Bd. 58 (1954), H. 5, S. 283 bis 321.
Hierzu 1 Blatt Zeichnungen
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL842366X | 1955-09-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1047317B true DE1047317B (de) | 1958-12-24 |
Family
ID=19845047
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DEN12762A Pending DE1047317B (de) | 1955-09-29 | 1956-09-25 | Halbleitendes Elektrodensystem |
Country Status (5)
Country | Link |
---|---|
US (1) | US2917684A (de) |
BE (1) | BE551335A (de) |
DE (1) | DE1047317B (de) |
FR (1) | FR1157675A (de) |
GB (1) | GB842366A (de) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1123406B (de) * | 1960-09-27 | 1962-02-08 | Telefunken Patent | Verfahren zur Herstellung von legierten Halbleiteranordnungen |
DE1148660B (de) * | 1960-01-06 | 1963-05-16 | Pacific Semiconductors Inc | Verfahren zum Zusammenbau einer Halbleiter-Kristallanordnung |
DE1289188B (de) * | 1964-12-15 | 1969-02-13 | Telefunken Patent | Metallbasistransistor |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2982894A (en) * | 1960-01-12 | 1961-05-02 | Jr Thomas C Tweedie | Coaxial microwave diode and method of making the same |
DE1126513B (de) * | 1958-08-19 | 1962-03-29 | Intermetall | Verfahren zur Bearbeitung von Halbleiteranordnungen |
FR1217793A (fr) * | 1958-12-09 | 1960-05-05 | Perfectionnements à la fabrication des éléments semi-conducteurs | |
NL254841A (de) * | 1959-08-14 | 1900-01-01 | ||
NL242762A (de) * | 1959-08-27 | |||
US3168687A (en) * | 1959-12-22 | 1965-02-02 | Hughes Aircraft Co | Packaged semiconductor assemblies having exposed electrodes |
US3147779A (en) * | 1960-09-16 | 1964-09-08 | Gen Electric | Cutting and forming transistor leads |
US3025439A (en) * | 1960-09-22 | 1962-03-13 | Texas Instruments Inc | Mounting for silicon semiconductor device |
US3159775A (en) * | 1960-11-30 | 1964-12-01 | Sylvania Electric Prod | Semiconductor device and method of manufacture |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2588956A (en) * | 1946-07-31 | 1952-03-11 | Gen Electric Co Ltd | Crystal rectifier |
DE840407C (de) * | 1944-07-20 | 1952-06-03 | Western Electric Co | Siliziumkoerper fuer elektrische Zwecke |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2677079A (en) * | 1949-06-11 | 1954-04-27 | Automatic Elect Lab | Concentric translating device |
US2541832A (en) * | 1949-07-22 | 1951-02-13 | Gen Electric | Electric current rectifier |
CA478611A (en) * | 1949-12-29 | 1951-11-13 | Western Electric Company, Incorporated | Etching processes and solutions |
-
0
- BE BE551335D patent/BE551335A/xx unknown
-
1956
- 1956-09-05 US US608067A patent/US2917684A/en not_active Expired - Lifetime
- 1956-09-25 DE DEN12762A patent/DE1047317B/de active Pending
- 1956-09-26 GB GB29393/56A patent/GB842366A/en not_active Expired
- 1956-09-27 FR FR1157675D patent/FR1157675A/fr not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE840407C (de) * | 1944-07-20 | 1952-06-03 | Western Electric Co | Siliziumkoerper fuer elektrische Zwecke |
US2588956A (en) * | 1946-07-31 | 1952-03-11 | Gen Electric Co Ltd | Crystal rectifier |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1148660B (de) * | 1960-01-06 | 1963-05-16 | Pacific Semiconductors Inc | Verfahren zum Zusammenbau einer Halbleiter-Kristallanordnung |
DE1123406B (de) * | 1960-09-27 | 1962-02-08 | Telefunken Patent | Verfahren zur Herstellung von legierten Halbleiteranordnungen |
DE1289188B (de) * | 1964-12-15 | 1969-02-13 | Telefunken Patent | Metallbasistransistor |
Also Published As
Publication number | Publication date |
---|---|
BE551335A (de) | |
GB842366A (en) | 1960-07-27 |
US2917684A (en) | 1959-12-15 |
FR1157675A (fr) | 1958-06-02 |
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