DE1047317B - Halbleitendes Elektrodensystem - Google Patents

Halbleitendes Elektrodensystem

Info

Publication number
DE1047317B
DE1047317B DEN12762A DEN0012762A DE1047317B DE 1047317 B DE1047317 B DE 1047317B DE N12762 A DEN12762 A DE N12762A DE N0012762 A DEN0012762 A DE N0012762A DE 1047317 B DE1047317 B DE 1047317B
Authority
DE
Germany
Prior art keywords
semiconducting
electrode system
chromium
nickel
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEN12762A
Other languages
English (en)
Inventor
Hans Karl Becherer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1047317B publication Critical patent/DE1047317B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01067—Holmium [Ho]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01072—Hafnium [Hf]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Contacts (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • ing And Chemical Polishing (AREA)

Description

Die Erfindung bezieht sich auf ein halbleitendes Elektrodensystem, welches aus einem halbleitenden Körper, einer oder mehreren Elektroden sowie mit diesen Elektroden bereits vor einem nachfolgenden Ätzprozeß verbundenen Stromzuleitungen besteht.
Es ist bekannt, solche Elektrodensysteme, deren halbleitender Körper z. B. aus Germanium oder Silizium bestehen kann, nach dem Anbringen der Elektroden und der Stromzuleitungen einer Ätzbehandlung zu unterwerfen. Da die üblichen Ätzmittel nicht nur die Oberfläche des halbleitenden Körpers, sondern auch die der Zuleitungen chemisch angreifen, besteht die Gefahr, daß die dadurch in Lösung gehenden Elemente die halbleitende Oberfläche beschmutzen, was einen beträchtlichen Rückgang der elektrischen Eigenschäften eines solchen Systems zur Folge hat.
Der Erfindung liegt die Entdeckung zugrunde, daß, obzwar Chrom und Nickel von den üblichen Ätzmitteln angegriffen werden, manche Legierungen dieser Metalle bestehen, die nicht angegriffen werden.
Nach der Erfindung besteht wenigstens eine Stromzuleitung aus einer Legierung von Chrom und Nickel, die wenigstens einen so großen Gehalt eines jeden dieser Elemente aufweist, daß ein chemischer Angriff bei den üblichen Ätzmitteln nicht auftritt. Die Legierung enthält vorzugsweise wenigstens 5 % eines dieser Metalle. Eine besonders gut brauchbare Legierung enthält 20% Chrom und 80% Nickel.
Die Erfindung wird an Hand eines durch eine Zeichnung verdeutlichten Ausführungsbeispiels näher erläutert.
Die Zeichnung ist eine schematische Darstellung eines Schnitts einer Kristalldiode.
Die Diode besteht aus einem Germanium-Einkristall 1 der η-Art mit einer Stärke von 0,5 mm und einer Oberfläche von 3 · 3 mm. Der spezifische Widerstand beträgt z.B. 15 Ohm/cm. Der Kristall ist mittels einer 10% Antimon enthaltenden Zinnmenge 2 auf einem vergoldeten Molybdänplättchen 3 festgelötet, welches etwa den gleichen Ausdehnungskoeffizienten wie Germanium besitzt. Auf der Oberseite des Kristalls ist eine aus Indium bestehende sogenannte Legierungselektrode 4 aufgeschmolzen. Eine aus einer Legierung von 20% Chrom und 80% Nickel bestehende Zuleitung 5 ist in der Elektrode 4 befestigt.
Im allgemeinen braucht man selbstverständlich Stromzuleitungen nur aus einer solchen Legierung Halbleitendes Elektrodensystem
Anmelder:
N. V. Philips' Gloeilampenfabrieken,
Eindhoven (Niederlande)
Vertreter: Dr. rer. nat. P. Roßbach, Patentanwalt,
Hamburg 1, Mönckebergstr. 7
Beanspruchte Priorität:
Niederlande vom 29. September 1955
Hans Karl Becherer, Hamburg,
ist als Erfinder genannt worden
herzustellen, insoweit sie mit der Ätzflüssigkeit in Berührung kommen.

Claims (3)

Patentansprüche:
1. Halbleitendes Elektrodensystem, welches aus einem halbleitenden Körper, einer oder mehreren Elektroden, sowie mit diesen Elektroden bereits vor einem nachfolgenden Ätzprozeß verbundenen Stromzuleitungen besteht, dadurch gekennzeichnet, daß wenigstens eine Stromzuleitung aus einer Legierung von Chrom und Nickel besteht, die wenigstens einen so großen Gehalt eines jeden dieser Elemente aufweist, daß ein chemischer Angriff in den üblichen Ätzmitteln nicht auftritt.
2. Halbleitendes Elektrodensystem nach Anspruch 1, dadurch gekennzeichnet, daß die Legierung wenigstens 5% Chrom oder 5% Nickel enthält.
3. Halbleitend.es Elektrodensystem nach Anspruch 2, dadurch gekennzeichnet, daß die Legierung 20% Chrom und 80% Nickel enthält.
In Betracht gezogene Druckschriften:
Deutsche Patentschrift Nr. 840 407;
USA.-Patentschrift Nr. 2 588 956;
Zeitschrift für Elektrochemie, Bd. 58 (1954), H. 5, S. 283 bis 321.
Hierzu 1 Blatt Zeichnungen
DEN12762A 1955-09-29 1956-09-25 Halbleitendes Elektrodensystem Pending DE1047317B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL842366X 1955-09-29

Publications (1)

Publication Number Publication Date
DE1047317B true DE1047317B (de) 1958-12-24

Family

ID=19845047

Family Applications (1)

Application Number Title Priority Date Filing Date
DEN12762A Pending DE1047317B (de) 1955-09-29 1956-09-25 Halbleitendes Elektrodensystem

Country Status (5)

Country Link
US (1) US2917684A (de)
BE (1) BE551335A (de)
DE (1) DE1047317B (de)
FR (1) FR1157675A (de)
GB (1) GB842366A (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1123406B (de) * 1960-09-27 1962-02-08 Telefunken Patent Verfahren zur Herstellung von legierten Halbleiteranordnungen
DE1148660B (de) * 1960-01-06 1963-05-16 Pacific Semiconductors Inc Verfahren zum Zusammenbau einer Halbleiter-Kristallanordnung
DE1289188B (de) * 1964-12-15 1969-02-13 Telefunken Patent Metallbasistransistor

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2982894A (en) * 1960-01-12 1961-05-02 Jr Thomas C Tweedie Coaxial microwave diode and method of making the same
DE1126513B (de) * 1958-08-19 1962-03-29 Intermetall Verfahren zur Bearbeitung von Halbleiteranordnungen
FR1217793A (fr) * 1958-12-09 1960-05-05 Perfectionnements à la fabrication des éléments semi-conducteurs
NL254841A (de) * 1959-08-14 1900-01-01
NL242762A (de) * 1959-08-27
US3168687A (en) * 1959-12-22 1965-02-02 Hughes Aircraft Co Packaged semiconductor assemblies having exposed electrodes
US3147779A (en) * 1960-09-16 1964-09-08 Gen Electric Cutting and forming transistor leads
US3025439A (en) * 1960-09-22 1962-03-13 Texas Instruments Inc Mounting for silicon semiconductor device
US3159775A (en) * 1960-11-30 1964-12-01 Sylvania Electric Prod Semiconductor device and method of manufacture

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2588956A (en) * 1946-07-31 1952-03-11 Gen Electric Co Ltd Crystal rectifier
DE840407C (de) * 1944-07-20 1952-06-03 Western Electric Co Siliziumkoerper fuer elektrische Zwecke

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2677079A (en) * 1949-06-11 1954-04-27 Automatic Elect Lab Concentric translating device
US2541832A (en) * 1949-07-22 1951-02-13 Gen Electric Electric current rectifier
CA478611A (en) * 1949-12-29 1951-11-13 Western Electric Company, Incorporated Etching processes and solutions

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE840407C (de) * 1944-07-20 1952-06-03 Western Electric Co Siliziumkoerper fuer elektrische Zwecke
US2588956A (en) * 1946-07-31 1952-03-11 Gen Electric Co Ltd Crystal rectifier

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1148660B (de) * 1960-01-06 1963-05-16 Pacific Semiconductors Inc Verfahren zum Zusammenbau einer Halbleiter-Kristallanordnung
DE1123406B (de) * 1960-09-27 1962-02-08 Telefunken Patent Verfahren zur Herstellung von legierten Halbleiteranordnungen
DE1289188B (de) * 1964-12-15 1969-02-13 Telefunken Patent Metallbasistransistor

Also Published As

Publication number Publication date
US2917684A (en) 1959-12-15
FR1157675A (fr) 1958-06-02
BE551335A (de)
GB842366A (en) 1960-07-27

Similar Documents

Publication Publication Date Title
DE1047317B (de) Halbleitendes Elektrodensystem
DE969491C (de) Halbleiteruebertragungseinrichtung
DE112013002780T5 (de) Piezoelektrische Vorrichtung
DE1086350B (de) Verfahren zur Herstellung einer Halbleiteranordnung, z. B. eines Siliziumgleichrichters
DE1279848B (de) Verfahren zum grossflaechigen Kontaktieren eines einkristallinen Siliziumkoerpers
DE1004294B (de) Verfahren zur Kontaktierung eines Halbleiterkoerpers
DE1789062A1 (de) Verfahren zum Herstellen von Metallkontakten fuer den Einbau von Halbleiterbauelementen in Gehaeuse
DE2054391A1 (de) Zinnoxid Atzverfahren
DE501792C (de) Loeten von Wolfram und Molybdaen
DE1071840B (de) Verfahren zur Herstellung von Elektroden an Halbleiterkörpern von Halbleiteranordnungen
DE1071846B (de)
DE845369C (de) Sperrschichtzelle der Selentype, bei welcher ein Stromzufuehrungsleiter auf der gutleitenden Elektrode festgeloetet ist, sowie Verfahren zur Herstellung dieser Sperrschichtzelle
DE2237616B2 (de) Verfahren zum einschmelzen eines halbleiterelements in ein glasgehaeuse
AT237751B (de) Verfahren zur Herstellung eines Halbleiterbauelementes
DE908695C (de) Verfahren zum Abloesen duenner Metallschichten von ihren Unterlagen
AT164430B (de) Sperrschichtzelle der Selentype, bei welcher ein Stromzuführungsleiter auf der gutleitenden Elektrode festgelötet ist, sowie Verfahren zur Herstellung dieser Sperrschichtzelle
DE2262207A1 (de) Verfahren zur herstellung von siliciumhalbleitervorrichtungen
DE418480C (de) Loeten von Aluminium
DE1923317A1 (de) Verfahren zum Niederschlagen eines Kontaktes auf einen Halbleiter
DE1614818C3 (de) Verfahren zum Herstellen eines Planartransistors
DE1243274C2 (de) Verfahren zur Herstellung von Halbleiteranordnungen mit einem Halbleiterkoerper aus Silizium
DE972667C (de) Verwendung von Silberlegierungen zum Loeten oder Hartloeten und Verfahren zum Loetenmit diesen Loten
DE576129C (de) Verfahren zur Herstellung von unipolaren Leitern, wie Gleichrichtern und Photozellen
DE1196793B (de) Verfahren zum Kontaktieren von Halbleiter-koerpern fuer Halbleiterbauelemente
AT218570B (de) Verfahren zur großflächigen Kontaktierung eines einkristallinen Siliziumkörpers