DE10204822B8 - Eingabe-/Ausgabeleitungs-Abtastverstärker eines Halbleiterspeicherbauelementes - Google Patents

Eingabe-/Ausgabeleitungs-Abtastverstärker eines Halbleiterspeicherbauelementes Download PDF

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Publication number
DE10204822B8
DE10204822B8 DE10204822A DE10204822A DE10204822B8 DE 10204822 B8 DE10204822 B8 DE 10204822B8 DE 10204822 A DE10204822 A DE 10204822A DE 10204822 A DE10204822 A DE 10204822A DE 10204822 B8 DE10204822 B8 DE 10204822B8
Authority
DE
Germany
Prior art keywords
input
memory device
semiconductor memory
sense amplifier
output line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10204822A
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English (en)
Other versions
DE10204822A1 (de
DE10204822B4 (de
Inventor
Jae-yoon Suwon Shim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE10204822A1 publication Critical patent/DE10204822A1/de
Application granted granted Critical
Publication of DE10204822B4 publication Critical patent/DE10204822B4/de
Publication of DE10204822B8 publication Critical patent/DE10204822B8/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers
DE10204822A 2001-02-26 2002-02-01 Eingabe-/Ausgabeleitungs-Abtastverstärker eines Halbleiterspeicherbauelementes Expired - Fee Related DE10204822B8 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR01-9606 2001-02-26
KR10-2001-0009606A KR100382734B1 (ko) 2001-02-26 2001-02-26 전류소모가 작고 ｄｃ전류가 작은 반도체 메모리장치의입출력라인 감지증폭기

Publications (3)

Publication Number Publication Date
DE10204822A1 DE10204822A1 (de) 2002-09-12
DE10204822B4 DE10204822B4 (de) 2006-12-07
DE10204822B8 true DE10204822B8 (de) 2007-03-15

Family

ID=19706246

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10204822A Expired - Fee Related DE10204822B8 (de) 2001-02-26 2002-02-01 Eingabe-/Ausgabeleitungs-Abtastverstärker eines Halbleiterspeicherbauelementes

Country Status (4)

Country Link
US (1) US6483351B2 (de)
JP (1) JP3825338B2 (de)
KR (1) KR100382734B1 (de)
DE (1) DE10204822B8 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4514945B2 (ja) * 2000-12-22 2010-07-28 富士通セミコンダクター株式会社 半導体装置
KR100546321B1 (ko) * 2003-03-15 2006-01-26 삼성전자주식회사 데이터 라인 상에 전압 감지 증폭기와 전류 감지 증폭기를갖는 멀티 뱅크 메모리 장치
DE102004013055B4 (de) * 2003-03-15 2008-12-04 Samsung Electronics Co., Ltd., Suwon Halbleiterspeicherbaustein mit Datenleitungsabtastverstärker
US6944066B1 (en) 2004-04-29 2005-09-13 Micron Technology, Inc. Low voltage data path and current sense amplifier
US7061817B2 (en) * 2004-06-30 2006-06-13 Micron Technology, Inc. Data path having grounded precharge operation and test compression capability
US7187207B2 (en) * 2005-06-27 2007-03-06 Texas Instruments Incorporated Leakage balancing transistor for jitter reduction in CML to CMOS converters
US7583107B2 (en) * 2006-09-27 2009-09-01 Atmel Corporation Sense amplifier circuit for low voltage applications
KR100826497B1 (ko) 2007-01-22 2008-05-02 삼성전자주식회사 전력 소모를 줄이기 위한 반도체 메모리 장치의 입출력센스 앰프 회로
KR101311726B1 (ko) * 2007-07-06 2013-09-26 삼성전자주식회사 센스 앰프 회로, 이를 포함하는 반도체 메모리 장치 및신호 증폭 방법
KR101519039B1 (ko) * 2008-11-27 2015-05-11 삼성전자주식회사 입출력 센스 앰프, 이를 포함하는 반도체 메모리 장치, 및 반도체 메모리 장치를 포함하는 메모리 시스템
DE102009011255B4 (de) * 2009-03-02 2012-08-23 Austriamicrosystems Ag Ausleseschaltung für wieder beschreibbare Speicher und Ausleseverfahren für dieselben
US8289796B2 (en) 2010-01-26 2012-10-16 Micron Technology, Inc. Sense amplifier having loop gain control
US8705304B2 (en) * 2010-03-26 2014-04-22 Micron Technology, Inc. Current mode sense amplifier with passive load
US8283950B2 (en) 2010-08-11 2012-10-09 Micron Technology, Inc. Delay lines, amplifier systems, transconductance compensating systems and methods of compensating
US8810281B2 (en) 2011-07-26 2014-08-19 Micron Technology, Inc. Sense amplifiers including bias circuits
KR20140028601A (ko) * 2012-08-29 2014-03-10 에스케이하이닉스 주식회사 입출력센스앰프
CN107430881B (zh) * 2015-03-09 2021-03-23 东芝存储器株式会社 半导体存储装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4100052A1 (de) * 1990-12-28 1992-07-02 Samsung Electronics Co Ltd Schaltung zum steuern des ausgangs eines sensorverstaerkers
US5528543A (en) * 1994-09-16 1996-06-18 Texas Instruments Incorporated Sense amplifier circuitry
US5648935A (en) * 1994-05-23 1997-07-15 Hyundai Electronics Industries Co., Ltd. Sense amplifier
US5654936A (en) * 1995-05-25 1997-08-05 Samsung Electronics Co., Ltd. Control circuit and method for controlling a data line switching circuit in a semiconductor memory device
US5856748A (en) * 1996-04-24 1999-01-05 Samsung Electronics, Co., Ltd. Sensing amplifier with current mirror
US5886546A (en) * 1996-06-27 1999-03-23 Lg Semicon Co., Ltd. Current/voltage converter, sense amplifier and sensing method using same
US6097633A (en) * 1997-10-31 2000-08-01 Stmicroelectronics S.R.L. Read circuit for non-volatile memories

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960008456B1 (en) * 1993-10-06 1996-06-26 Hyundai Electronics Ind Sense amplifier of semiconductor memory device
KR0172517B1 (ko) * 1995-03-07 1999-03-30 김주용 전류감지증폭형 감지증폭기
KR19990048862A (ko) * 1997-12-11 1999-07-05 김영환 반도체 메모리 소자의 감지 증폭기
KR100357041B1 (ko) * 1998-12-22 2003-01-08 주식회사 하이닉스반도체 저전압용전류감지증폭기
KR100343290B1 (ko) * 2000-03-21 2002-07-15 윤종용 반도체 메모리 장치의 입출력 감지 증폭기 회로

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4100052A1 (de) * 1990-12-28 1992-07-02 Samsung Electronics Co Ltd Schaltung zum steuern des ausgangs eines sensorverstaerkers
US5648935A (en) * 1994-05-23 1997-07-15 Hyundai Electronics Industries Co., Ltd. Sense amplifier
US5528543A (en) * 1994-09-16 1996-06-18 Texas Instruments Incorporated Sense amplifier circuitry
US5654936A (en) * 1995-05-25 1997-08-05 Samsung Electronics Co., Ltd. Control circuit and method for controlling a data line switching circuit in a semiconductor memory device
US5856748A (en) * 1996-04-24 1999-01-05 Samsung Electronics, Co., Ltd. Sensing amplifier with current mirror
US5886546A (en) * 1996-06-27 1999-03-23 Lg Semicon Co., Ltd. Current/voltage converter, sense amplifier and sensing method using same
US6097633A (en) * 1997-10-31 2000-08-01 Stmicroelectronics S.R.L. Read circuit for non-volatile memories

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
EEVINCK, E.; VAN BEERS, P.J.; ONTROP, H.: "Current-mode techniques for high-speed VLSI circuits with application to current sense amplifier for CMOS SRAM's" IEEE Journal of Solid-State Circuits, Bd. 26, Nr. 4, April 1991, S. 525-536 *
KIHARA, H.; SATO, H.; MIYAJI, F.; TAKEDA, M.
SASAKI, M.; TOMO, Y.; CHUANG, P.T.; KOBAYASHI, K.: "A 9-ns 16-Mb CMOS SRAM with offset-compensated current sense amplifier" IEEE Journal of Solid- State Circuits, Bd. 28,Nr. 11,Nov. 1993,1119-1124
SEDRA, A.S.; ROBERTS, G.W.; GOHH, F.: "The cur- rent conveyor: history, progress and new results" IEE Proceedings G: Circuits, Devices and Systems, Bd. 137, Nr. 2, Apr. 1990, 78-87
SEDRA, A.S.; ROBERTS, G.W.; GOHH, F.: "The current conveyor: history, progress and new results" IEE Proceedings G: Circuits, Devices and Systems, Bd. 137, Nr. 2, Apr. 1990, S. 78-87 *
SEEVINCK, E.; VAN BEERS, P.J.; ONTROP, H.: "Cur- rent-mode techniques for high-speed VLSI circuits with application to current sense amplifier for CMOS SRAM's" IEEE Journal of Solid-State Circuits, Bd. 26, Nr. 4, April 1991, 525-536
SENO, K. ET AL:"A 9-ns 16-Mb CMOS SRAM with offset-compensated current sense amplifier" IEEE Journal of Solid- State Circuits, Bd. 28, Nr. 11, Nov. 1993, S. 1119-1124 *
SENO, K.; KNORPP, K.; SHU, L.-L.; TESHIMA, N.

Also Published As

Publication number Publication date
DE10204822A1 (de) 2002-09-12
US6483351B2 (en) 2002-11-19
US20020118047A1 (en) 2002-08-29
JP2002288982A (ja) 2002-10-04
KR100382734B1 (ko) 2003-05-09
KR20020069552A (ko) 2002-09-05
JP3825338B2 (ja) 2006-09-27
DE10204822B4 (de) 2006-12-07

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8381 Inventor (new situation)

Inventor name: SHIM, JAE-YOON, SUWON, KYONGGI, KR

8396 Reprint of erroneous front page
8364 No opposition during term of opposition
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20140902