DE60230216D1 - Kaskodenkettenverstärker - Google Patents

Kaskodenkettenverstärker

Info

Publication number
DE60230216D1
DE60230216D1 DE60230216T DE60230216T DE60230216D1 DE 60230216 D1 DE60230216 D1 DE 60230216D1 DE 60230216 T DE60230216 T DE 60230216T DE 60230216 T DE60230216 T DE 60230216T DE 60230216 D1 DE60230216 D1 DE 60230216D1
Authority
DE
Germany
Prior art keywords
kasko
think
tablets
amplifier
think tablets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60230216T
Other languages
English (en)
Inventor
Hisao Shigematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE60230216D1 publication Critical patent/DE60230216D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605—Distributed amplifiers
    • H03F3/607—Distributed amplifiers using FET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microwave Amplifiers (AREA)
  • Amplifiers (AREA)
DE60230216T 2001-07-11 2002-03-14 Kaskodenkettenverstärker Expired - Lifetime DE60230216D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001210672 2001-07-11
JP2002034069A JP4751002B2 (ja) 2001-07-11 2002-02-12 カスコード型分布増幅器

Publications (1)

Publication Number Publication Date
DE60230216D1 true DE60230216D1 (de) 2009-01-22

Family

ID=26618516

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60230216T Expired - Lifetime DE60230216D1 (de) 2001-07-11 2002-03-14 Kaskodenkettenverstärker

Country Status (5)

Country Link
US (1) US6864750B2 (de)
EP (1) EP1276230B1 (de)
JP (1) JP4751002B2 (de)
CA (1) CA2376410C (de)
DE (1) DE60230216D1 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3570374B1 (de) 2004-06-23 2022-04-20 pSemi Corporation Integriertes hf-frontend
KR100704926B1 (ko) * 2004-09-07 2007-04-10 인티그런트 테크놀로지즈(주) 멀티플 게이트드 트랜지스터를 이용하여 선형성을 개선한능동 회로
US6965722B1 (en) * 2004-10-29 2005-11-15 Finisar Corporation High efficiency active matching electro-optic transducer driver circuit operable with low supply voltages
JP4821214B2 (ja) * 2005-08-26 2011-11-24 三菱電機株式会社 カスコード接続回路
US7652539B2 (en) * 2005-10-31 2010-01-26 Huai Gao Multi-stage broadband amplifiers
EP2166667B1 (de) * 2006-03-20 2012-02-01 Fujitsu Limited Analoge Schaltung
US7489201B2 (en) * 2006-05-10 2009-02-10 Georgia Tech Research Corp. Millimeter-wave cascode amplifier gain boosting technique
WO2008035480A1 (fr) * 2006-09-20 2008-03-27 Panasonic Corporation Amplificateur à faible bruit et système de communication sans fil
US7843268B2 (en) * 2008-04-17 2010-11-30 Hittite Microwave Corporation Modified distributed amplifier to improve low frequency efficiency and noise figure
JP5217728B2 (ja) * 2008-07-24 2013-06-19 富士通株式会社 増幅器
JP2010068261A (ja) * 2008-09-11 2010-03-25 Mitsubishi Electric Corp カスコード回路
JP4965602B2 (ja) * 2009-05-19 2012-07-04 日本電信電話株式会社 差動分布回路ｉｃパッケージ
JP4951022B2 (ja) * 2009-05-19 2012-06-13 日本電信電話株式会社 差動分布回路
US8487706B2 (en) * 2010-01-25 2013-07-16 Peregrine Semiconductor Corporation Stacked linear power amplifier with capacitor feedback and resistor isolation
US8786368B2 (en) 2011-03-09 2014-07-22 Hittite Microwave Corporation Distributed amplifier with improved stabilization
US8766375B2 (en) 2011-03-21 2014-07-01 International Rectifier Corporation Composite semiconductor device with active oscillation prevention
US9859882B2 (en) 2011-03-21 2018-01-02 Infineon Technologies Americas Corp. High voltage composite semiconductor device with protection for a low voltage device
US9362905B2 (en) 2011-03-21 2016-06-07 Infineon Technologies Americas Corp. Composite semiconductor device with turn-on prevention control
US20120241820A1 (en) * 2011-03-21 2012-09-27 International Rectifier Corporation III-Nitride Transistor with Passive Oscillation Prevention
US8680928B2 (en) * 2012-03-29 2014-03-25 Avago Technologies General Ip (Singapore) Pte. Ltd. Power amplifier including variable capacitor circuit
US9071289B2 (en) * 2012-04-23 2015-06-30 Cambridge Silicon Radio Limited Transceiver supporting multiple modulation schemes
JP2014096696A (ja) * 2012-11-09 2014-05-22 Mitsubishi Electric Corp カスコードアンプ
US9240756B1 (en) * 2013-03-12 2016-01-19 Lockheed Martin Corporation High linearity, high efficiency, low noise, gain block using cascode network
JP6201391B2 (ja) 2013-04-16 2017-09-27 三菱電機株式会社 電力増幅器
JP6372030B2 (ja) * 2013-04-16 2018-08-15 株式会社村田製作所 電力増幅器
US9219450B1 (en) * 2014-01-07 2015-12-22 Lockheed Martin Corporation High linearity low noise amplifier
US9679893B2 (en) * 2015-05-15 2017-06-13 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device and transistor
BR112018015791A2 (pt) 2016-02-04 2018-12-26 Fraunhofer Ges Forschung amplificador de potência em matriz
US9837965B1 (en) 2016-09-16 2017-12-05 Peregrine Semiconductor Corporation Standby voltage condition for fast RF amplifier bias recovery
US9960737B1 (en) 2017-03-06 2018-05-01 Psemi Corporation Stacked PA power control
US10715091B2 (en) 2017-10-13 2020-07-14 Samsung Electronics Co., Ltd. Low-noise amplifier supporting beam-forming function and receiver including the same
JP7336448B2 (ja) * 2018-09-04 2023-08-31 日本電信電話株式会社 分布型増幅器
JP2020096294A (ja) * 2018-12-13 2020-06-18 株式会社村田製作所 電力増幅回路
JP7480845B2 (ja) 2020-06-26 2024-05-10 日本電信電話株式会社 合波器
CN112234945B (zh) * 2020-10-14 2024-02-27 联合微电子中心有限责任公司 分布式放大器电路、增益单元和电子装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2943267A (en) * 1955-10-31 1960-06-28 Sperry Rand Corp Series-energized transistor amplifier
GB1098979A (en) * 1965-07-03 1968-01-10 Marconi Co Ltd Improvements in or relating to high frequency transistor amplifiers
FR2558997B1 (fr) * 1984-01-31 1989-02-03 Thomson Csf Amplificateur correcteur du temps de propagation de groupe de signaux electriques et chaine d'amplification a frequence intermediaire de faisceaux hertziens comportant un tel amplificateur
US5196805A (en) * 1992-01-31 1993-03-23 Motorola, Inc. Distributed differential amplifier arrangement
JP3056933B2 (ja) * 1993-12-16 2000-06-26 日本電信電話株式会社 分布型バラン
US6137367A (en) * 1998-03-24 2000-10-24 Amcom Communications, Inc. High power high impedance microwave devices for power applications
US6366172B1 (en) * 1998-07-07 2002-04-02 Matsushita Electric Industrial Co., Ltd. Semiconductor amplifier circuit and system
JP4206589B2 (ja) * 1999-12-02 2009-01-14 富士通株式会社 分布増幅器

Also Published As

Publication number Publication date
US6864750B2 (en) 2005-03-08
EP1276230B1 (de) 2008-12-10
US20030011436A1 (en) 2003-01-16
JP4751002B2 (ja) 2011-08-17
JP2003092523A (ja) 2003-03-28
CA2376410A1 (en) 2003-01-11
EP1276230A2 (de) 2003-01-15
EP1276230A3 (de) 2003-05-28
CA2376410C (en) 2004-11-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE