DE102020118483A1 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

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Publication number
DE102020118483A1
DE102020118483A1 DE102020118483.2A DE102020118483A DE102020118483A1 DE 102020118483 A1 DE102020118483 A1 DE 102020118483A1 DE 102020118483 A DE102020118483 A DE 102020118483A DE 102020118483 A1 DE102020118483 A1 DE 102020118483A1
Authority
DE
Germany
Prior art keywords
semiconductor
area
semiconductor region
semiconductor device
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102020118483.2A
Other languages
German (de)
English (en)
Inventor
Hayato Okamoto
Ze Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE102020118483A1 publication Critical patent/DE102020118483A1/de
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/114—PN junction isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/128—Anode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions

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  • Electrodes Of Semiconductors (AREA)
DE102020118483.2A 2019-08-01 2020-07-14 Halbleitervorrichtung Pending DE102020118483A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-142130 2019-08-01
JP2019142130A JP7257912B2 (ja) 2019-08-01 2019-08-01 半導体装置

Publications (1)

Publication Number Publication Date
DE102020118483A1 true DE102020118483A1 (de) 2021-02-04

Family

ID=74165591

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102020118483.2A Pending DE102020118483A1 (de) 2019-08-01 2020-07-14 Halbleitervorrichtung

Country Status (4)

Country Link
US (1) US11444156B2 (https=)
JP (1) JP7257912B2 (https=)
CN (1) CN112310191B (https=)
DE (1) DE102020118483A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6752259B2 (ja) * 2018-09-19 2020-09-09 本田技研工業株式会社 車両

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3447884B2 (ja) * 1995-03-15 2003-09-16 株式会社東芝 高耐圧半導体素子
US6049108A (en) * 1995-06-02 2000-04-11 Siliconix Incorporated Trench-gated MOSFET with bidirectional voltage clamping
JP4017258B2 (ja) * 1998-07-29 2007-12-05 三菱電機株式会社 半導体装置
JP2007324428A (ja) 2006-06-02 2007-12-13 Toyota Motor Corp 半導体装置
JP5961865B2 (ja) * 2010-09-15 2016-08-02 ローム株式会社 半導体素子
JP5605230B2 (ja) * 2011-01-14 2014-10-15 トヨタ自動車株式会社 半導体装置
JP6082314B2 (ja) * 2012-11-06 2017-02-15 株式会社東芝 半導体装置
WO2014148400A1 (ja) * 2013-03-21 2014-09-25 富士電機株式会社 半導体装置
JP6296535B2 (ja) * 2013-12-09 2018-03-20 ローム株式会社 ダイオードおよびそれを含む信号出力回路
JP2016029685A (ja) * 2014-07-25 2016-03-03 株式会社東芝 半導体装置
JP6619522B1 (ja) * 2018-03-29 2019-12-11 新電元工業株式会社 ワイドギャップ半導体装置

Also Published As

Publication number Publication date
CN112310191B (zh) 2024-05-07
US11444156B2 (en) 2022-09-13
US20210036107A1 (en) 2021-02-04
JP2021027092A (ja) 2021-02-22
CN112310191A (zh) 2021-02-02
JP7257912B2 (ja) 2023-04-14

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R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0029868000

Ipc: H10D0008500000