DE102019111377B4 - Verfahren zum Verarbeiten eines Siliziumkarbid-Wafers - Google Patents

Verfahren zum Verarbeiten eines Siliziumkarbid-Wafers

Info

Publication number
DE102019111377B4
DE102019111377B4 DE102019111377.6A DE102019111377A DE102019111377B4 DE 102019111377 B4 DE102019111377 B4 DE 102019111377B4 DE 102019111377 A DE102019111377 A DE 102019111377A DE 102019111377 B4 DE102019111377 B4 DE 102019111377B4
Authority
DE
Germany
Prior art keywords
silicon carbide
wafer
layer
ions
carbide wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102019111377.6A
Other languages
German (de)
English (en)
Other versions
DE102019111377A1 (de
Inventor
Hans-Joachim Schulze
Tobias Höchbauer
Wolfgang Lehnert
Bernhard Goller
Werner Schustereder
Günter Denifl
Roland Rupp
Mihai Draghici
Alexander Breymesser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to US16/422,659 priority Critical patent/US10903078B2/en
Priority to JP2019099046A priority patent/JP7229852B2/ja
Publication of DE102019111377A1 publication Critical patent/DE102019111377A1/de
Application granted granted Critical
Publication of DE102019111377B4 publication Critical patent/DE102019111377B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
DE102019111377.6A 2018-05-28 2019-05-02 Verfahren zum Verarbeiten eines Siliziumkarbid-Wafers Active DE102019111377B4 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US16/422,659 US10903078B2 (en) 2018-05-28 2019-05-24 Methods for processing a silicon carbide wafer, and a silicon carbide semiconductor device
JP2019099046A JP7229852B2 (ja) 2018-05-28 2019-05-28 炭化ケイ素ウェハを処理するための方法および炭化ケイ素半導体デバイス

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018112729.4 2018-05-28
DE102018112729 2018-05-28

Publications (2)

Publication Number Publication Date
DE102019111377A1 DE102019111377A1 (de) 2019-11-28
DE102019111377B4 true DE102019111377B4 (de) 2025-10-09

Family

ID=68499521

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102019111377.6A Active DE102019111377B4 (de) 2018-05-28 2019-05-02 Verfahren zum Verarbeiten eines Siliziumkarbid-Wafers

Country Status (3)

Country Link
US (1) US10903078B2 (https=)
JP (1) JP7229852B2 (https=)
DE (1) DE102019111377B4 (https=)

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TWI766775B (zh) * 2020-07-27 2022-06-01 環球晶圓股份有限公司 碳化矽晶圓的製造方法以及半導體結構
DE102020119953A1 (de) 2020-07-29 2022-02-03 Infineon Technologies Ag Verfahren zum Bilden eines Halbleiterbauelements
DE102020210934A1 (de) 2020-08-31 2022-03-03 Robert Bosch Gesellschaft mit beschränkter Haftung Leistungshalbleiteranordnung
DE102020215007A1 (de) 2020-11-30 2022-06-02 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines vertikalen Leistungshalbleiterbauelements
US11848197B2 (en) 2020-11-30 2023-12-19 Thinsic Inc. Integrated method for low-cost wide band gap semiconductor device manufacturing
US11626371B2 (en) * 2020-12-28 2023-04-11 Infineon Technologies Ag Semiconductor structure with one or more support structures
CN113178383A (zh) * 2021-03-10 2021-07-27 华为技术有限公司 一种碳化硅基板、碳化硅器件及其基板减薄方法
DE102021110742B4 (de) 2021-04-27 2025-01-16 Infineon Technologies Ag Verfahren zum teilen von halbleiterwerkstücken, halbleiterwerkstück und gerät zum definieren eines trennbereichs in halbleiterwerkstücken
CA3220595A1 (en) * 2021-05-20 2022-11-24 Umicore Compound semiconductor layered structures and processes for making the same
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DE102021118315A1 (de) * 2021-07-15 2023-01-19 mi2-factory GmbH Verfahren zur Herstellung eines elektronischen Halbleiterbauelements
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JP7716305B2 (ja) * 2021-10-11 2025-07-31 株式会社デンソー 半導体装置の製造方法
CN114823303A (zh) * 2022-04-27 2022-07-29 无锡先为科技有限公司 半导体器件及其制备方法
US12400914B2 (en) 2022-07-03 2025-08-26 Thinsic Inc. Semiconductor exfoliation method
US12322657B2 (en) 2022-07-03 2025-06-03 Thinsic Inc. Wide band gap semiconductor process, device, and method
CN115831716A (zh) * 2022-12-27 2023-03-21 广东芯粤能半导体有限公司 碳化硅衬底的回收方法及回收系统
WO2025062658A1 (ja) * 2023-09-22 2025-03-27 日本碍子株式会社 半導体ウエハ、半導体ウエハ製造方法
US12382707B1 (en) * 2024-02-01 2025-08-05 Southeast University Conductive channel structure for SiC devices, fully integrated SiC device and fully integrated manufacturing process thereof
DE102024202906A1 (de) 2024-03-27 2025-10-02 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen einer SiC-Epitaxieschicht auf einer ersten monokristallinen SiC-Schicht und Vorrichtung mit einer SiC-Epitaxieschicht auf einer ersten monokristallinen SiC-Schicht
US12438001B1 (en) * 2024-04-05 2025-10-07 Wolfspeed, Inc. Off axis laser-based surface processing operations for semiconductor wafers
US12434330B1 (en) 2024-04-05 2025-10-07 Wolfspeed, Inc. Laser-based surface processing for semiconductor workpiece
US12269123B1 (en) 2024-04-05 2025-04-08 Wolfspeed, Inc. Laser edge shaping for semiconductor wafers

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Also Published As

Publication number Publication date
US10903078B2 (en) 2021-01-26
DE102019111377A1 (de) 2019-11-28
JP7229852B2 (ja) 2023-02-28
US20190362972A1 (en) 2019-11-28
JP2020010020A (ja) 2020-01-16

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