DE102015116092B4 - Verfahren zum Herstellen eines optoelektronischen Bauelements - Google Patents

Verfahren zum Herstellen eines optoelektronischen Bauelements Download PDF

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Publication number
DE102015116092B4
DE102015116092B4 DE102015116092.7A DE102015116092A DE102015116092B4 DE 102015116092 B4 DE102015116092 B4 DE 102015116092B4 DE 102015116092 A DE102015116092 A DE 102015116092A DE 102015116092 B4 DE102015116092 B4 DE 102015116092B4
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DE
Germany
Prior art keywords
carrier
metallization
semiconductor chip
optoelectronic semiconductor
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
DE102015116092.7A
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German (de)
English (en)
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DE102015116092A1 (de
Inventor
Christoph Walter
Roland Enzmann
Markus Horn
Jan Seidenfaden
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102015116092.7A priority Critical patent/DE102015116092B4/de
Priority to JP2018514853A priority patent/JP6779283B2/ja
Priority to PCT/EP2016/071847 priority patent/WO2017050636A1/de
Priority to US15/761,585 priority patent/US10454240B2/en
Publication of DE102015116092A1 publication Critical patent/DE102015116092A1/de
Application granted granted Critical
Publication of DE102015116092B4 publication Critical patent/DE102015116092B4/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • H01S5/0238—Positioning of the laser chips using marks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8582—Means for heat extraction or cooling characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0365—Manufacture or treatment of packages of means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Device Packages (AREA)
DE102015116092.7A 2015-09-23 2015-09-23 Verfahren zum Herstellen eines optoelektronischen Bauelements Active DE102015116092B4 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE102015116092.7A DE102015116092B4 (de) 2015-09-23 2015-09-23 Verfahren zum Herstellen eines optoelektronischen Bauelements
JP2018514853A JP6779283B2 (ja) 2015-09-23 2016-09-15 オプトエレクトロニクス部品の製造方法
PCT/EP2016/071847 WO2017050636A1 (de) 2015-09-23 2016-09-15 Verfahren zum herstellen eines optoelektronischen bauelements
US15/761,585 US10454240B2 (en) 2015-09-23 2016-09-15 Method of producing an optoelectronic component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102015116092.7A DE102015116092B4 (de) 2015-09-23 2015-09-23 Verfahren zum Herstellen eines optoelektronischen Bauelements

Publications (2)

Publication Number Publication Date
DE102015116092A1 DE102015116092A1 (de) 2017-03-23
DE102015116092B4 true DE102015116092B4 (de) 2018-06-14

Family

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Family Applications (1)

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DE102015116092.7A Active DE102015116092B4 (de) 2015-09-23 2015-09-23 Verfahren zum Herstellen eines optoelektronischen Bauelements

Country Status (4)

Country Link
US (1) US10454240B2 (enExample)
JP (1) JP6779283B2 (enExample)
DE (1) DE102015116092B4 (enExample)
WO (1) WO2017050636A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017108385A1 (de) 2017-04-20 2018-10-25 Osram Opto Semiconductors Gmbh Laserbarren und Halbleiterlaser sowie Verfahren zur Herstellung von Laserbarren und Halbleiterlasern
DE102020111394A1 (de) 2020-04-27 2021-10-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum herstellen einer halbleiterlaseranordnung und halbleiterlaseranordnung
DE102021131795A1 (de) 2021-12-02 2023-06-07 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserbauelement und verfahren zur herstellung eines laserbauelements

Citations (7)

* Cited by examiner, † Cited by third party
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US20040053430A1 (en) * 1999-12-01 2004-03-18 Sharp Kabushiki Kaisha Semiconductor laser device, fabricating method thereof and optical pickup employing the semiconductor laser device
US20060125060A1 (en) * 2004-12-15 2006-06-15 Elpida Memory Inc. Semiconductor chip, and manufacturing method and application of the chip
JP2006185931A (ja) * 2004-12-24 2006-07-13 Tokuyama Corp 半導体レーザー装置およびその製造方法
JP2009212179A (ja) * 2008-03-03 2009-09-17 Sanyo Electric Co Ltd 半導体レーザ素子および半導体レーザ素子の製造方法
US20100140816A1 (en) * 2008-12-09 2010-06-10 Asml Netherlands B.V. Method of forming a marker, substrate having a marker and device manufacturing method
DE102010009455A1 (de) * 2010-02-26 2011-09-01 Osram Opto Semiconductors Gmbh Halbleiterlaservorrichtung mit einem Halbleiterlaserchip und Verfahren zu dessen Herstellung
DE102013223115A1 (de) * 2013-11-13 2015-05-28 Osram Opto Semiconductors Gmbh Laserbauelement und Verfahren zu seiner Herstellung

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63151093A (ja) 1986-12-16 1988-06-23 Fuji Electric Co Ltd 半導体レ−ザ素子のろう付け方法
JPH0272573U (enExample) * 1988-11-18 1990-06-01
JP2003046181A (ja) 2001-07-27 2003-02-14 Ricoh Co Ltd サブマウント、半導体装置およびサブマウントの製造方法
US6796480B1 (en) 2003-04-03 2004-09-28 Spectra-Physics Reliability of heat sink mounted laser diode bars
DE10323857A1 (de) * 2003-05-26 2005-01-27 Osram Opto Semiconductors Gmbh Gehäuse für ein Laserdiodenbauelement, Laserdiodenbauelement und Verfahren zum Herstellen eines Laserdiodenbauelements
JP2008016507A (ja) 2006-07-03 2008-01-24 Toshiba Tec Corp 電気配線の製造方法
JP4933370B2 (ja) 2007-07-17 2012-05-16 株式会社リコー アレイ型半導体レーザ装置の組み立て方法
JP2009103915A (ja) 2007-10-23 2009-05-14 Fuji Xerox Co Ltd 光導波路フィルム及びその製造方法、並びに、光送受信モジュール
KR101284796B1 (ko) * 2011-10-05 2013-07-10 (주)포인트엔지니어링 캔 패지키 타입의 광 디바이스 제조 방법 및 이에 의해 제조된 광 디바이스
JP2015019066A (ja) * 2013-07-10 2015-01-29 エクセリタス カナダ，インコーポレイテッド 成形境界を制御したｌｌｃ組立における光半導体デバイス及びこれを形成するための方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040053430A1 (en) * 1999-12-01 2004-03-18 Sharp Kabushiki Kaisha Semiconductor laser device, fabricating method thereof and optical pickup employing the semiconductor laser device
US20060125060A1 (en) * 2004-12-15 2006-06-15 Elpida Memory Inc. Semiconductor chip, and manufacturing method and application of the chip
JP2006185931A (ja) * 2004-12-24 2006-07-13 Tokuyama Corp 半導体レーザー装置およびその製造方法
JP2009212179A (ja) * 2008-03-03 2009-09-17 Sanyo Electric Co Ltd 半導体レーザ素子および半導体レーザ素子の製造方法
US20100140816A1 (en) * 2008-12-09 2010-06-10 Asml Netherlands B.V. Method of forming a marker, substrate having a marker and device manufacturing method
DE102010009455A1 (de) * 2010-02-26 2011-09-01 Osram Opto Semiconductors Gmbh Halbleiterlaservorrichtung mit einem Halbleiterlaserchip und Verfahren zu dessen Herstellung
DE102013223115A1 (de) * 2013-11-13 2015-05-28 Osram Opto Semiconductors Gmbh Laserbauelement und Verfahren zu seiner Herstellung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP 2006185931 A (Maschinenübersetzung), AlPN [online] JPO [abgerufen am 01.03.2018] *

Also Published As

Publication number Publication date
DE102015116092A1 (de) 2017-03-23
WO2017050636A1 (de) 2017-03-30
US10454240B2 (en) 2019-10-22
JP6779283B2 (ja) 2020-11-04
US20180351324A1 (en) 2018-12-06
JP2018527757A (ja) 2018-09-20

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