JP6779283B2 - オプトエレクトロニクス部品の製造方法 - Google Patents

オプトエレクトロニクス部品の製造方法 Download PDF

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Publication number
JP6779283B2
JP6779283B2 JP2018514853A JP2018514853A JP6779283B2 JP 6779283 B2 JP6779283 B2 JP 6779283B2 JP 2018514853 A JP2018514853 A JP 2018514853A JP 2018514853 A JP2018514853 A JP 2018514853A JP 6779283 B2 JP6779283 B2 JP 6779283B2
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JP
Japan
Prior art keywords
carrier
metallization
manufacturing
separation path
semiconductor chip
Prior art date
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JP2018514853A
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English (en)
Japanese (ja)
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JP2018527757A (ja
JP2018527757A5 (enExample
Inventor
クリストフ ウォルター
クリストフ ウォルター
ローラント エンツマン
ローラント エンツマン
マルクス ホルン
マルクス ホルン
ヤン ザイデンファーデン
ヤン ザイデンファーデン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
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Publication of JP2018527757A publication Critical patent/JP2018527757A/ja
Publication of JP2018527757A5 publication Critical patent/JP2018527757A5/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • H01S5/0238—Positioning of the laser chips using marks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8582—Means for heat extraction or cooling characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0365—Manufacture or treatment of packages of means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Device Packages (AREA)
JP2018514853A 2015-09-23 2016-09-15 オプトエレクトロニクス部品の製造方法 Active JP6779283B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102015116092.7 2015-09-23
DE102015116092.7A DE102015116092B4 (de) 2015-09-23 2015-09-23 Verfahren zum Herstellen eines optoelektronischen Bauelements
PCT/EP2016/071847 WO2017050636A1 (de) 2015-09-23 2016-09-15 Verfahren zum herstellen eines optoelektronischen bauelements

Publications (3)

Publication Number Publication Date
JP2018527757A JP2018527757A (ja) 2018-09-20
JP2018527757A5 JP2018527757A5 (enExample) 2019-11-28
JP6779283B2 true JP6779283B2 (ja) 2020-11-04

Family

ID=56958912

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018514853A Active JP6779283B2 (ja) 2015-09-23 2016-09-15 オプトエレクトロニクス部品の製造方法

Country Status (4)

Country Link
US (1) US10454240B2 (enExample)
JP (1) JP6779283B2 (enExample)
DE (1) DE102015116092B4 (enExample)
WO (1) WO2017050636A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017108385A1 (de) 2017-04-20 2018-10-25 Osram Opto Semiconductors Gmbh Laserbarren und Halbleiterlaser sowie Verfahren zur Herstellung von Laserbarren und Halbleiterlasern
DE102020111394A1 (de) 2020-04-27 2021-10-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum herstellen einer halbleiterlaseranordnung und halbleiterlaseranordnung
DE102021131795A1 (de) 2021-12-02 2023-06-07 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserbauelement und verfahren zur herstellung eines laserbauelements

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63151093A (ja) 1986-12-16 1988-06-23 Fuji Electric Co Ltd 半導体レ−ザ素子のろう付け方法
JPH0272573U (enExample) * 1988-11-18 1990-06-01
JP4050865B2 (ja) * 1999-12-01 2008-02-20 シャープ株式会社 半導体レーザ装置及びその製造方法及びそれを用いた光ピックアップ
JP2003046181A (ja) 2001-07-27 2003-02-14 Ricoh Co Ltd サブマウント、半導体装置およびサブマウントの製造方法
US6796480B1 (en) 2003-04-03 2004-09-28 Spectra-Physics Reliability of heat sink mounted laser diode bars
DE10323857A1 (de) * 2003-05-26 2005-01-27 Osram Opto Semiconductors Gmbh Gehäuse für ein Laserdiodenbauelement, Laserdiodenbauelement und Verfahren zum Herstellen eines Laserdiodenbauelements
JP4470171B2 (ja) * 2004-12-15 2010-06-02 エルピーダメモリ株式会社 半導体チップ、その製造方法およびその用途
JP2006185931A (ja) * 2004-12-24 2006-07-13 Tokuyama Corp 半導体レーザー装置およびその製造方法
JP2008016507A (ja) * 2006-07-03 2008-01-24 Toshiba Tec Corp 電気配線の製造方法
JP4933370B2 (ja) * 2007-07-17 2012-05-16 株式会社リコー アレイ型半導体レーザ装置の組み立て方法
JP2009103915A (ja) * 2007-10-23 2009-05-14 Fuji Xerox Co Ltd 光導波路フィルム及びその製造方法、並びに、光送受信モジュール
JP2009212179A (ja) * 2008-03-03 2009-09-17 Sanyo Electric Co Ltd 半導体レーザ素子および半導体レーザ素子の製造方法
NL2003785A (en) * 2008-12-09 2010-06-10 Asml Netherlands Bv Method of forming a marker, substrate having a marker and device manufacturing method.
DE102010009455B4 (de) * 2010-02-26 2021-07-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaservorrichtung mit einem Halbleiterlaserchip und Verfahren zu dessen Herstellung
KR101284796B1 (ko) * 2011-10-05 2013-07-10 (주)포인트엔지니어링 캔 패지키 타입의 광 디바이스 제조 방법 및 이에 의해 제조된 광 디바이스
JP2015019066A (ja) * 2013-07-10 2015-01-29 エクセリタス カナダ，インコーポレイテッド 成形境界を制御したｌｌｃ組立における光半導体デバイス及びこれを形成するための方法
DE102013223115A1 (de) 2013-11-13 2015-05-28 Osram Opto Semiconductors Gmbh Laserbauelement und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
DE102015116092A1 (de) 2017-03-23
US10454240B2 (en) 2019-10-22
JP2018527757A (ja) 2018-09-20
DE102015116092B4 (de) 2018-06-14
WO2017050636A1 (de) 2017-03-30
US20180351324A1 (en) 2018-12-06

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