DE102015000189A1 - Epitaktische Emitter-Kontakt-Struktur und Bildung ohmscher Kontakte für einen Bipolartransistor mit Heteroübergang - Google Patents

Epitaktische Emitter-Kontakt-Struktur und Bildung ohmscher Kontakte für einen Bipolartransistor mit Heteroübergang Download PDF

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Publication number
DE102015000189A1
DE102015000189A1 DE102015000189.2A DE102015000189A DE102015000189A1 DE 102015000189 A1 DE102015000189 A1 DE 102015000189A1 DE 102015000189 A DE102015000189 A DE 102015000189A DE 102015000189 A1 DE102015000189 A1 DE 102015000189A1
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DE
Germany
Prior art keywords
layer
emitter
ingap
gaas
ingaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102015000189.2A
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German (de)
English (en)
Inventor
Timothy S. Henderson
Sheila K. Hurtt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qorvo US Inc
Original Assignee
Triquint Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Triquint Semiconductor Inc filed Critical Triquint Semiconductor Inc
Publication of DE102015000189A1 publication Critical patent/DE102015000189A1/de
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/136—Emitter regions of BJTs of heterojunction BJTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE102015000189.2A 2014-01-16 2015-01-05 Epitaktische Emitter-Kontakt-Struktur und Bildung ohmscher Kontakte für einen Bipolartransistor mit Heteroübergang Withdrawn DE102015000189A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/157,096 2014-01-16
US14/157,096 US9231088B2 (en) 2014-01-16 2014-01-16 Emitter contact epitaxial structure and ohmic contact formation for heterojunction bipolar transistor

Publications (1)

Publication Number Publication Date
DE102015000189A1 true DE102015000189A1 (de) 2015-07-16

Family

ID=53485061

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102015000189.2A Withdrawn DE102015000189A1 (de) 2014-01-16 2015-01-05 Epitaktische Emitter-Kontakt-Struktur und Bildung ohmscher Kontakte für einen Bipolartransistor mit Heteroübergang

Country Status (4)

Country Link
US (2) US9231088B2 (https=)
JP (1) JP6392128B2 (https=)
DE (1) DE102015000189A1 (https=)
TW (1) TWI655773B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9231088B2 (en) 2014-01-16 2016-01-05 Triquint Semiconductor, Inc. Emitter contact epitaxial structure and ohmic contact formation for heterojunction bipolar transistor
US10256329B2 (en) * 2015-09-04 2019-04-09 Win Semiconductors Corp. Heterojunction bipolar transistor
US9905678B2 (en) 2016-02-17 2018-02-27 Qorvo Us, Inc. Semiconductor device with multiple HBTs having different emitter ballast resistances
US10546852B2 (en) * 2018-05-03 2020-01-28 Qualcomm Incorporated Integrated semiconductor devices and method of fabricating the same
US20230163193A1 (en) * 2020-04-21 2023-05-25 Nippon Telegraph And Telephone Corporation Heterojunction Bipolar Transistor and Method of Manufacturing the Same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005260255A (ja) * 1996-02-19 2005-09-22 Sharp Corp 化合物半導体装置及びその製造方法
GB2341974A (en) * 1998-09-22 2000-03-29 Secr Defence Semiconductor device incorporating a superlattice structure
JP3566707B2 (ja) * 2002-03-26 2004-09-15 ユーディナデバイス株式会社 ヘテロ接合バイポーラトランジスタ
US7696536B1 (en) * 2003-08-22 2010-04-13 The Board Of Trustees Of The University Of Illinois Semiconductor method and device
JP2005150531A (ja) * 2003-11-18 2005-06-09 Nec Compound Semiconductor Devices Ltd 半導体装置
JP2006210452A (ja) * 2005-01-26 2006-08-10 Sony Corp 半導体装置
JP2006303244A (ja) * 2005-04-21 2006-11-02 Matsushita Electric Ind Co Ltd ヘテロ接合バイポーラトランジスタ及びその製造方法
JP2007103925A (ja) * 2005-09-12 2007-04-19 Hitachi Cable Ltd 半導体装置及びその製造方法
JP2007189200A (ja) * 2005-12-13 2007-07-26 Hitachi Cable Ltd トランジスタ用エピタキシャルウエハおよびトランジスタ
US9231088B2 (en) 2014-01-16 2016-01-05 Triquint Semiconductor, Inc. Emitter contact epitaxial structure and ohmic contact formation for heterojunction bipolar transistor

Also Published As

Publication number Publication date
US20160049493A1 (en) 2016-02-18
TW201530759A (zh) 2015-08-01
US9231088B2 (en) 2016-01-05
US9608084B2 (en) 2017-03-28
US20150200284A1 (en) 2015-07-16
JP6392128B2 (ja) 2018-09-19
TWI655773B (zh) 2019-04-01
JP2015135966A (ja) 2015-07-27

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