DE102013004848B4 - Behandlungsflüssigkeit zur Hemmung eines Musterzusammenbruchs in einer Mikrostruktur und Verfahren zur Herstellung einer Mikrostruktur, bei der diese eingesetzt wird. - Google Patents

Behandlungsflüssigkeit zur Hemmung eines Musterzusammenbruchs in einer Mikrostruktur und Verfahren zur Herstellung einer Mikrostruktur, bei der diese eingesetzt wird. Download PDF

Info

Publication number
DE102013004848B4
DE102013004848B4 DE102013004848.6A DE102013004848A DE102013004848B4 DE 102013004848 B4 DE102013004848 B4 DE 102013004848B4 DE 102013004848 A DE102013004848 A DE 102013004848A DE 102013004848 B4 DE102013004848 B4 DE 102013004848B4
Authority
DE
Germany
Prior art keywords
microstructure
pattern
treatment liquid
breakdown
denotes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102013004848.6A
Other languages
German (de)
English (en)
Other versions
DE102013004848A1 (de
Inventor
Hiroshi Matsunaga
Kimihiro AOYAMA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Gas Chemical Co Inc
Original Assignee
Mitsubishi Gas Chemical Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co Inc filed Critical Mitsubishi Gas Chemical Co Inc
Publication of DE102013004848A1 publication Critical patent/DE102013004848A1/de
Application granted granted Critical
Publication of DE102013004848B4 publication Critical patent/DE102013004848B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/60—Additives non-macromolecular
    • C09D7/63—Additives non-macromolecular organic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • General Chemical & Material Sciences (AREA)
DE102013004848.6A 2012-03-27 2013-03-20 Behandlungsflüssigkeit zur Hemmung eines Musterzusammenbruchs in einer Mikrostruktur und Verfahren zur Herstellung einer Mikrostruktur, bei der diese eingesetzt wird. Active DE102013004848B4 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2012-071080 2012-03-27
JP2012071080 2012-03-27
JP2013024629A JP6119285B2 (ja) 2012-03-27 2013-02-12 微細構造体のパターン倒壊抑制用処理液及びこれを用いた微細構造体の製造方法
JP2013-024629 2013-02-12

Publications (2)

Publication Number Publication Date
DE102013004848A1 DE102013004848A1 (de) 2013-10-02
DE102013004848B4 true DE102013004848B4 (de) 2020-03-26

Family

ID=49154823

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102013004848.6A Active DE102013004848B4 (de) 2012-03-27 2013-03-20 Behandlungsflüssigkeit zur Hemmung eines Musterzusammenbruchs in einer Mikrostruktur und Verfahren zur Herstellung einer Mikrostruktur, bei der diese eingesetzt wird.

Country Status (5)

Country Link
US (1) US8956462B2 (https=)
JP (1) JP6119285B2 (https=)
KR (1) KR102002327B1 (https=)
DE (1) DE102013004848B4 (https=)
TW (1) TWI571506B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018063277A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Integrated circuit devices with non-collapsed fins and methods of treating the fins to prevent fin collapse
US10954480B2 (en) * 2017-09-29 2021-03-23 Versum Materials Us, Llc Compositions and methods for preventing collapse of high aspect ratio structures during drying

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012027667A2 (en) * 2010-08-27 2012-03-01 Advanced Technology Materials, Inc. Method for preventing the collapse of high aspect ratio structures during drying

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4180716B2 (ja) 1998-12-28 2008-11-12 富士通株式会社 半導体装置の製造方法
JP4045180B2 (ja) 2002-12-03 2008-02-13 Ａｚエレクトロニックマテリアルズ株式会社 リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法
JP4470144B2 (ja) 2003-03-19 2010-06-02 エルピーダメモリ株式会社 半導体集積回路装置の製造方法
JP4493393B2 (ja) 2004-04-23 2010-06-30 東京応化工業株式会社 リソグラフィー用リンス液
JP4353090B2 (ja) 2004-12-10 2009-10-28 三菱電機株式会社 レジスト用現像液
JP2007335892A (ja) 2007-08-17 2007-12-27 Toshiba Corp 半導体装置
JP4655083B2 (ja) 2007-11-16 2011-03-23 セイコーエプソン株式会社 微小電気機械装置
US7838425B2 (en) 2008-06-16 2010-11-23 Kabushiki Kaisha Toshiba Method of treating surface of semiconductor substrate
JP4743340B1 (ja) 2009-10-28 2011-08-10 セントラル硝子株式会社 保護膜形成用薬液
JP5630385B2 (ja) 2010-06-30 2014-11-26 セントラル硝子株式会社 保護膜形成用薬液及びウェハ表面の洗浄方法
JP2013102109A (ja) * 2011-01-12 2013-05-23 Central Glass Co Ltd 保護膜形成用薬液

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012027667A2 (en) * 2010-08-27 2012-03-01 Advanced Technology Materials, Inc. Method for preventing the collapse of high aspect ratio structures during drying

Also Published As

Publication number Publication date
JP2013229567A (ja) 2013-11-07
KR20130110086A (ko) 2013-10-08
KR102002327B1 (ko) 2019-07-22
TW201404872A (zh) 2014-02-01
US8956462B2 (en) 2015-02-17
US20130260571A1 (en) 2013-10-03
DE102013004848A1 (de) 2013-10-02
JP6119285B2 (ja) 2017-04-26
TWI571506B (zh) 2017-02-21

Similar Documents

Publication Publication Date Title
DE112010003217B4 (de) Verarbeitungsflüssigkeit zur Unterdrückung eines Musterzusammenbruchs einer feinen Struktur, die aus einem Metall, einem Metallnitrid oder einem Metalloxid gebildet ist, und Verfahren zur Herstellung der feinen Struktur, bei dem diese eingesetzt wird
DE60028962T2 (de) Zusammensetzungen zum reinigen von substraten von organischen und plasmaätz-rückständen bei halbleiter-vorrichtungen
DE60212999T2 (de) Zusammensetzung zum Entfernen von Rückständen von der Mikrostruktur eines Objektes
DE60212366T2 (de) Reinigerzusammensetzung
DE10239768B4 (de) Photoresist-Stripplösung und Verfahren zum Strippen von Photoresists unter Verwendung derselben
DE69820397T2 (de) Ätzmittel und ihre Verwendung
DE112015000506B4 (de) Flüssige Zusammensetzung zum Entfernen von Titannitrid, Halbleiterelement-Reinigungs-Verfahren unter Verwendung desselben und Halbleiterelement-Herstellungs-Verfahren
DE112012002437B4 (de) Verfahren zum Reinigen eines Halbleiterwafers
DE69717900T2 (de) Reinigungsmittelzusammensetzung für Photoresist und Verfahren zur Herstellung eines halbleitenden integrierten Schaltkreises
DE112010004602B4 (de) Verfahren zur Herstellung einer feinen Struktur unter Einsatz einer Verarbeitungsflüssigkeit zur Verhinderung eines Musterzusammenbruchs
EP2615632B1 (en) Microstructure manufacturing method using treatment liquid for inhibiting pattern collapse in microstructures
DE10355319B4 (de) Photoresist-Entfernerzusammensetzungen
DE112010003836B4 (de) Behandlungslösung zur Verhinderung eines Musterzusammenbruchs in einem feinen Strukturkörper und Verfahren zur Herstellung eines feinen Strukturkörpers, bei dem diese eingesetzt wird
DE102013004848B4 (de) Behandlungsflüssigkeit zur Hemmung eines Musterzusammenbruchs in einer Mikrostruktur und Verfahren zur Herstellung einer Mikrostruktur, bei der diese eingesetzt wird.
DE112010003895T5 (de) Verarbeitungsflüssigkeit zur Unterdrückung eines Musterzusammenbruchs einer feinen Metallstruktur und Verfahren zur Herstellung einer feinen Metallstruktur, bei dem diese eingesetzt wird
EP2615631B1 (en) Method for producing microstructure using processing liquid for suppressing pattern collapse of microstructure
DE102006023506B4 (de) Wässrige Reinigungszusammensetzung zur Kupferverarbeitung von Halbleitern
EP2615630B1 (en) Use of treatment liquid for inhibiting pattern collapse in microstructures, and microstructure manufacturing method using said treatment liquid
DE102017124654B4 (de) Chemische zusammensetzung für dreifachschicht-entfernung und verfahren
DE102007044787A1 (de) Verfahren zum Reinigen einer Halbleiterscheibe
JP6405610B2 (ja) 高アスペクト比を有する微細構造体のパターン倒壊抑制用処理液およびこれを用いた微細構造体の製造方法
JP2015035458A (ja) 微細構造体のパターン倒壊抑制用処理液及びこれを用いた微細構造体の製造方法
WO1999046811A1 (de) Selektives ätzen von siliciumnitrid mit einem nasschemischen ver fahren

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final