KR102002327B1 - 미세 구조체의 패턴 붕괴 억제용 처리액 및 이것을 이용한 미세 구조체의 제조방법 - Google Patents

미세 구조체의 패턴 붕괴 억제용 처리액 및 이것을 이용한 미세 구조체의 제조방법 Download PDF

Info

Publication number
KR102002327B1
KR102002327B1 KR1020130032277A KR20130032277A KR102002327B1 KR 102002327 B1 KR102002327 B1 KR 102002327B1 KR 1020130032277 A KR1020130032277 A KR 1020130032277A KR 20130032277 A KR20130032277 A KR 20130032277A KR 102002327 B1 KR102002327 B1 KR 102002327B1
Authority
KR
South Korea
Prior art keywords
microstructure
acid
pattern
collapse
treatment liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020130032277A
Other languages
English (en)
Korean (ko)
Other versions
KR20130110086A (ko
Inventor
히로시 마츠나가
키미히로 아오야마
Original Assignee
미쯔비시 가스 케미칼 컴파니, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 filed Critical 미쯔비시 가스 케미칼 컴파니, 인코포레이티드
Publication of KR20130110086A publication Critical patent/KR20130110086A/ko
Application granted granted Critical
Publication of KR102002327B1 publication Critical patent/KR102002327B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/60—Additives non-macromolecular
    • C09D7/63—Additives non-macromolecular organic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • General Chemical & Material Sciences (AREA)
KR1020130032277A 2012-03-27 2013-03-26 미세 구조체의 패턴 붕괴 억제용 처리액 및 이것을 이용한 미세 구조체의 제조방법 Active KR102002327B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2012-071080 2012-03-27
JP2012071080 2012-03-27
JP2013024629A JP6119285B2 (ja) 2012-03-27 2013-02-12 微細構造体のパターン倒壊抑制用処理液及びこれを用いた微細構造体の製造方法
JPJP-P-2013-024629 2013-02-12

Publications (2)

Publication Number Publication Date
KR20130110086A KR20130110086A (ko) 2013-10-08
KR102002327B1 true KR102002327B1 (ko) 2019-07-22

Family

ID=49154823

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130032277A Active KR102002327B1 (ko) 2012-03-27 2013-03-26 미세 구조체의 패턴 붕괴 억제용 처리액 및 이것을 이용한 미세 구조체의 제조방법

Country Status (5)

Country Link
US (1) US8956462B2 (https=)
JP (1) JP6119285B2 (https=)
KR (1) KR102002327B1 (https=)
DE (1) DE102013004848B4 (https=)
TW (1) TWI571506B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018063277A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Integrated circuit devices with non-collapsed fins and methods of treating the fins to prevent fin collapse
US10954480B2 (en) * 2017-09-29 2021-03-23 Versum Materials Us, Llc Compositions and methods for preventing collapse of high aspect ratio structures during drying

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012027667A2 (en) * 2010-08-27 2012-03-01 Advanced Technology Materials, Inc. Method for preventing the collapse of high aspect ratio structures during drying
US20120174945A1 (en) 2011-01-12 2012-07-12 Central Glass Company, Limited Liquid Chemical for Forming Protecting Film

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4180716B2 (ja) 1998-12-28 2008-11-12 富士通株式会社 半導体装置の製造方法
JP4045180B2 (ja) 2002-12-03 2008-02-13 Ａｚエレクトロニックマテリアルズ株式会社 リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法
JP4470144B2 (ja) 2003-03-19 2010-06-02 エルピーダメモリ株式会社 半導体集積回路装置の製造方法
JP4493393B2 (ja) 2004-04-23 2010-06-30 東京応化工業株式会社 リソグラフィー用リンス液
JP4353090B2 (ja) 2004-12-10 2009-10-28 三菱電機株式会社 レジスト用現像液
JP2007335892A (ja) 2007-08-17 2007-12-27 Toshiba Corp 半導体装置
JP4655083B2 (ja) 2007-11-16 2011-03-23 セイコーエプソン株式会社 微小電気機械装置
US7838425B2 (en) 2008-06-16 2010-11-23 Kabushiki Kaisha Toshiba Method of treating surface of semiconductor substrate
JP4743340B1 (ja) 2009-10-28 2011-08-10 セントラル硝子株式会社 保護膜形成用薬液
JP5630385B2 (ja) 2010-06-30 2014-11-26 セントラル硝子株式会社 保護膜形成用薬液及びウェハ表面の洗浄方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012027667A2 (en) * 2010-08-27 2012-03-01 Advanced Technology Materials, Inc. Method for preventing the collapse of high aspect ratio structures during drying
US20120174945A1 (en) 2011-01-12 2012-07-12 Central Glass Company, Limited Liquid Chemical for Forming Protecting Film

Also Published As

Publication number Publication date
JP2013229567A (ja) 2013-11-07
KR20130110086A (ko) 2013-10-08
TW201404872A (zh) 2014-02-01
US8956462B2 (en) 2015-02-17
US20130260571A1 (en) 2013-10-03
DE102013004848B4 (de) 2020-03-26
DE102013004848A1 (de) 2013-10-02
JP6119285B2 (ja) 2017-04-26
TWI571506B (zh) 2017-02-21

Similar Documents

Publication Publication Date Title
EP2615632B1 (en) Microstructure manufacturing method using treatment liquid for inhibiting pattern collapse in microstructures
KR102025121B1 (ko) 미세 구조체의 패턴 붕괴 억제용 처리액 및 이를 이용한 미세 구조체의 제조 방법
KR102002327B1 (ko) 미세 구조체의 패턴 붕괴 억제용 처리액 및 이것을 이용한 미세 구조체의 제조방법
KR101627392B1 (ko) 금속 미세 구조체의 패턴 도괴 억제용 처리액 및 이것을 이용한 금속 미세 구조체의 제조 방법
JPWO2011049091A1 (ja) 金属微細構造体のパターン倒壊抑制用処理液及びこれを用いた金属微細構造体の製造方法
JP5741589B2 (ja) 微細構造体のパターン倒壊抑制用処理液及びこれを用いた微細構造体の製造方法
JP5720575B2 (ja) 金属微細構造体のパターン倒壊抑制用処理液及びこれを用いた金属微細構造体の製造方法
JP6405610B2 (ja) 高アスペクト比を有する微細構造体のパターン倒壊抑制用処理液およびこれを用いた微細構造体の製造方法
JP2015035458A (ja) 微細構造体のパターン倒壊抑制用処理液及びこれを用いた微細構造体の製造方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000