JP6119285B2 - 微細構造体のパターン倒壊抑制用処理液及びこれを用いた微細構造体の製造方法 - Google Patents

微細構造体のパターン倒壊抑制用処理液及びこれを用いた微細構造体の製造方法 Download PDF

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Publication number
JP6119285B2
JP6119285B2 JP2013024629A JP2013024629A JP6119285B2 JP 6119285 B2 JP6119285 B2 JP 6119285B2 JP 2013024629 A JP2013024629 A JP 2013024629A JP 2013024629 A JP2013024629 A JP 2013024629A JP 6119285 B2 JP6119285 B2 JP 6119285B2
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Prior art keywords
microstructure
metal
pattern collapse
pattern
glycol
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JP2013024629A
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Japanese (ja)
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JP2013229567A5 (https=
JP2013229567A (ja
Inventor
裕嗣 松永
裕嗣 松永
公洋 青山
公洋 青山
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Mitsubishi Gas Chemical Co Inc
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Mitsubishi Gas Chemical Co Inc
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Application filed by Mitsubishi Gas Chemical Co Inc filed Critical Mitsubishi Gas Chemical Co Inc
Priority to JP2013024629A priority Critical patent/JP6119285B2/ja
Priority to US13/799,522 priority patent/US8956462B2/en
Priority to DE102013004848.6A priority patent/DE102013004848B4/de
Priority to TW102110301A priority patent/TWI571506B/zh
Priority to KR1020130032277A priority patent/KR102002327B1/ko
Publication of JP2013229567A publication Critical patent/JP2013229567A/ja
Publication of JP2013229567A5 publication Critical patent/JP2013229567A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/60—Additives non-macromolecular
    • C09D7/63—Additives non-macromolecular organic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • General Chemical & Material Sciences (AREA)
JP2013024629A 2012-03-27 2013-02-12 微細構造体のパターン倒壊抑制用処理液及びこれを用いた微細構造体の製造方法 Active JP6119285B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013024629A JP6119285B2 (ja) 2012-03-27 2013-02-12 微細構造体のパターン倒壊抑制用処理液及びこれを用いた微細構造体の製造方法
US13/799,522 US8956462B2 (en) 2012-03-27 2013-03-13 Treatment liquid for inhibiting pattern collapse in microstructure and method of manufacturing microstructure using the same
DE102013004848.6A DE102013004848B4 (de) 2012-03-27 2013-03-20 Behandlungsflüssigkeit zur Hemmung eines Musterzusammenbruchs in einer Mikrostruktur und Verfahren zur Herstellung einer Mikrostruktur, bei der diese eingesetzt wird.
TW102110301A TWI571506B (zh) 2012-03-27 2013-03-22 抑制微細構造體的圖案崩塌用之處理液及使用該處理液的微細構造體的製造方法
KR1020130032277A KR102002327B1 (ko) 2012-03-27 2013-03-26 미세 구조체의 패턴 붕괴 억제용 처리액 및 이것을 이용한 미세 구조체의 제조방법

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012071080 2012-03-27
JP2012071080 2012-03-27
JP2013024629A JP6119285B2 (ja) 2012-03-27 2013-02-12 微細構造体のパターン倒壊抑制用処理液及びこれを用いた微細構造体の製造方法

Publications (3)

Publication Number Publication Date
JP2013229567A JP2013229567A (ja) 2013-11-07
JP2013229567A5 JP2013229567A5 (https=) 2016-02-25
JP6119285B2 true JP6119285B2 (ja) 2017-04-26

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JP2013024629A Active JP6119285B2 (ja) 2012-03-27 2013-02-12 微細構造体のパターン倒壊抑制用処理液及びこれを用いた微細構造体の製造方法

Country Status (5)

Country Link
US (1) US8956462B2 (https=)
JP (1) JP6119285B2 (https=)
KR (1) KR102002327B1 (https=)
DE (1) DE102013004848B4 (https=)
TW (1) TWI571506B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018063277A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Integrated circuit devices with non-collapsed fins and methods of treating the fins to prevent fin collapse
US10954480B2 (en) * 2017-09-29 2021-03-23 Versum Materials Us, Llc Compositions and methods for preventing collapse of high aspect ratio structures during drying

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4180716B2 (ja) 1998-12-28 2008-11-12 富士通株式会社 半導体装置の製造方法
JP4045180B2 (ja) 2002-12-03 2008-02-13 Ａｚエレクトロニックマテリアルズ株式会社 リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法
JP4470144B2 (ja) 2003-03-19 2010-06-02 エルピーダメモリ株式会社 半導体集積回路装置の製造方法
JP4493393B2 (ja) 2004-04-23 2010-06-30 東京応化工業株式会社 リソグラフィー用リンス液
JP4353090B2 (ja) 2004-12-10 2009-10-28 三菱電機株式会社 レジスト用現像液
JP2007335892A (ja) 2007-08-17 2007-12-27 Toshiba Corp 半導体装置
JP4655083B2 (ja) 2007-11-16 2011-03-23 セイコーエプソン株式会社 微小電気機械装置
US7838425B2 (en) 2008-06-16 2010-11-23 Kabushiki Kaisha Toshiba Method of treating surface of semiconductor substrate
JP4743340B1 (ja) 2009-10-28 2011-08-10 セントラル硝子株式会社 保護膜形成用薬液
JP5630385B2 (ja) 2010-06-30 2014-11-26 セントラル硝子株式会社 保護膜形成用薬液及びウェハ表面の洗浄方法
WO2012027667A2 (en) * 2010-08-27 2012-03-01 Advanced Technology Materials, Inc. Method for preventing the collapse of high aspect ratio structures during drying
JP2013102109A (ja) * 2011-01-12 2013-05-23 Central Glass Co Ltd 保護膜形成用薬液

Also Published As

Publication number Publication date
JP2013229567A (ja) 2013-11-07
KR20130110086A (ko) 2013-10-08
KR102002327B1 (ko) 2019-07-22
TW201404872A (zh) 2014-02-01
US8956462B2 (en) 2015-02-17
US20130260571A1 (en) 2013-10-03
DE102013004848B4 (de) 2020-03-26
DE102013004848A1 (de) 2013-10-02
TWI571506B (zh) 2017-02-21

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