DE102012111654A1 - Elektronisches Bauelement und ein Verfahren zur Herstellung eines elektronischen Bauelements - Google Patents

Elektronisches Bauelement und ein Verfahren zur Herstellung eines elektronischen Bauelements Download PDF

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DE102012111654A1
DE102012111654A1 DE102012111654A DE102012111654A DE102012111654A1 DE 102012111654 A1 DE102012111654 A1 DE 102012111654A1 DE 102012111654 A DE102012111654 A DE 102012111654A DE 102012111654 A DE102012111654 A DE 102012111654A DE 102012111654 A1 DE102012111654 A1 DE 102012111654A1
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layer
electronic component
component according
carrier
solder
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DE102012111654B4 (de
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Michael Juerss
Konrad Rösl
Oliver EICHINGER
Kok Chai Goh
Tobias Schmidt
Alexander Heinrich
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Infineon Technologies AG
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Infineon Technologies AG
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    • H01L2924/176—Material
    • H01L2924/177—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/17738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/17747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
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    • H01L2924/176—Material
    • H01L2924/177—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/17738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/1776—Iron [Fe] as principal constituent

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Abstract

Das elektronische Bauelement enthält einen Träger, ein an dem Träger angebrachtes Halbleiter-Substrat und ein zwischen dem Halbleiter-Substrat und dem Träger angeordnetes Schichtsystem. Das Schichtsystem enthält eine auf dem Halbleiter-Substrat angeordnete elektrische Kontaktschicht. Eine Funktionsschicht ist auf der elektrischen Kontaktschicht angeordnet. Eine Klebeschicht ist auf der Funktionsschicht angeordnet. Eine Lötschicht ist zwischen der Klebeschicht und dem Träger angeordnet.

Description

  • TECHNISCHES GEBIET
  • Die vorliegende Erfindung betrifft ein elektronisches Bauelement und ein Verfahren zur Herstellung eines elektronischen Bauelements.
  • HINTERGRUND
  • Zur Herstellung von elektronischen Bauelementen werden sehr oft Halbleiterchips, Halbleiter-Dies, Halbleiter-Substrate oder Halbleiter-Wafer auf Trägern wie z. B. Leadframes aufgebracht. Das einzige erhältliche hochleitfähige Die-Befestigungsmaterial für Leistungshalbleiterchips mit hoher Temperaturwechsellast und hoher Heißlagerungssicherheit ist derzeit die AuSn-Diffusionslöt-Die-Befestigung. Hier handelt es sich bei dem Die-Befestigungsmaterial um eine AuSn-Legierung mit einem Au-Anteil von ungefähr 80%. Damit ist die Au-Sn-Lösung aufgrund der hohen Kosten auf eine geringe Lötschichtdicke beschränkt, was gewöhnlich zu einem mit Schwierigkeiten behafteten Die-Befestigungsprozess führt.
  • KURZE BESCHREIBUNG DER ZEICHNUNGEN
  • Die begleitenden Zeichnungen liegen bei, um ein eingehenderes Verständnis von Ausführungsformen zu bieten, und sind in diese Patentschrift miteinbezogen und bilden einen Teil davon. Die Zeichnungen veranschaulichen Ausführungsformen und dienen gemeinsam mit der Beschreibung der Erklärung der Ausführungsprinzipien. Andere Ausführungsformen und viele der vorgesehenen Vorteile der Ausführungsformen gewinnen ohne weiteres an Wert, wenn sie anhand der folgenden ausführlichen Beschreibung besser verstanden werden. Die Elemente der Zeichnungen sind nicht unbedingt zueinander maßstabsgetreu. Gleiche Bezugszahlen bezeichnen entsprechende ähnliche Teile.
  • 1 zeigt eine schematische Querschnittseitenansichtsdarstellung eines erfindungsgemäßen elektronischen Bauelements;
  • 2a und 2b zeigen schematische Querschnittseitenansichtsdarstellungen zur Veranschaulichung wesentlicher Mechanismen des Bondprozesses;
  • 3 zeigt ein Flussdiagramm zur Veranschaulichung eines Verfahrens zur Herstellung eines erfindungsgemäßen elektronischen Bauelements; und
  • 4 zeigt eine schematische Querschnittseitenansichtsdarstellung eines Trägers und eines Halbleiter-Substrats zusammen mit einem Schichtstapel zur Veranschaulichung eines Verfahrens zur Herstellung eines erfindungsgemäßen elektronischen Bauelements.
  • AUSFÜHRLICHE BESCHREIBUNG VERANSCHAULICHENDER AUSFÜHRUNGSFORMEN
  • Die Aspekte und Ausführungsformen werden nun anhand der Zeichnungen beschrieben, in denen stets gleiche Bezugszahlen allgemein zum Bezug auf gleiche Elemente verwendet werden. In der folgenden Beschreibung werden aus Erklärungsgründen zahlreiche spezifische Einzelheiten der Reihenfolge nach aufgezählt, um ein gründliches Verständnis eines Aspekts oder mehrerer Aspekte der Ausführungsformen zu geben. Einem Fachmann kann es jedoch offensichtlich sein, dass ein Aspekt oder mehrere Aspekte der Ausführungsformen auch mit einem geringeren Ausmaß an spezifischen Einzelheiten ausgeführt werden kann/können. In anderen Fällen sind bekannte Strukturen und Elemente in schematischer Form gezeigt, um die Beschreibung eines Aspekts oder mehrerer Aspekte der Ausführungsformen zu erleichtern. Es versteht sich, dass andere Ausführungsformen verwendet werden und bauliche oder logische Änderungen stattfinden können, ohne vom Schutzbereich der vorliegenden Erfindung abzuweichen. Man beachte weiterhin, dass die Zeichnungen nicht oder nicht unbedingt maßstabsgetreu sind.
  • Auch wenn möglicherweise ein jeweiliges Merkmal oder ein jeweiliger Aspekt einer Ausführungsform nur mit Bezug auf eine von mehreren Implementierungen offenbart ist, kann ein solches Merkmal oder ein solcher Aspekt zusätzlich mit einem oder mehreren anderen Merkmalen oder Aspekten der anderen Implementierungen kombiniert werden, wenn dies bei einer bestimmten oder jeweiligen Anwendung erwünscht und vorteilhaft sein kann. Wenn in der ausführlichen Beschreibung oder den Ansprüchen die Begriffe „enthalten”, „aufweisen”, „mit” oder andere Variationen davon verwendet werden, sollen solche Begriffe ferner ähnlich dem Begriff „umfassen” als einschließend betrachtet werden. Auch werden möglicherweise die Begriffe „gekoppelt” und „verbunden” zusammen mit Ableitungen verwendet. Es versteht sich, dass diese Begriffe verwendet werden können, um anzuzeigen, dass zwei Elemente miteinander kooperieren oder zusammenwirken, ob sie sich in direktem physischem oder elektrischem Kontakt miteinander befinden oder sich nicht in direktem Kontakt miteinander befinden. Der Begriff „beispielhaft” ist lediglich als Beispiel zu verstehen, und nicht als der beste oder optimale Fall. Somit soll die folgende ausführliche Beschreibung nicht im einschränkenden Sinn aufgefasst werden, und der Schutzumfang der vorliegenden Erfindung wird durch die angehängten Ansprüche definiert.
  • Bei den Ausführungsformen eines elektronischen Bauelements und eines Verfahrens zur Herstellung eines elektronischen Bauelements können verschiedene Arten von Halbleiterchips oder von in den Halbleiterchips integrierten Schaltungen Verwendung finden, darunter logische integrierte Schaltungen, analoge integrierte Schaltungen, integrierte Mischsignalschaltungen, MEMS (mikroelektromechanische Systeme), integrierte Leistungsschaltungen, Chips mit integrierten Passiva usw. Bei den Ausführungsformen können außerdem Halbleiterchips, die MOS-Transistorstrukturen oder Vertikaltransistorstrukturen wie zum Beispiel IGBT-Strukturen (IGBT-Bipolartransistor mit isolierter Gate-Elektrode) oder allgemein Transistorstrukturen, bei denen mindestens ein elektrischer Kontaktanschluss auf einer ersten Hauptfläche des Halbleiterchips liegt und mindestens ein anderer elektrischer Kontaktanschluss auf einer der ersten Hauptfläche des Halbleiterchips gegenüberliegenden zweiten Hauptfläche des Halbleiterchips liegt, verwendet werden.
  • Bei mehreren Ausführungsformen werden Schichten oder Schichtstapel aufeinander aufgebracht oder Materialien werden auf Schichten aufgebracht oder darauf abgeschieden. Es versteht sich, dass alle derartigen Begriffe wie „aufgebracht” oder „abgeschieden” buchstäblich alle Arten und Techniken zum Aufeinanderaufbringen von Schichten einschließen sollen. Insbesondere sollen sie Techniken einschließen, bei denen Schichten als Ganzes in einem Zug aufgebracht werden, wie zum Beispiel Laminierungstechniken sowie Techniken, bei denen Schichten sequenziell abgeschieden werden, wie zum Beispiel Sputtern, galvanischer Überzug, Verkapselung, Gasphasenabscheidung (CVD) usw.
  • 1 zeigt eine schematische Querschnittseitenansichtsdarstellung eines erfindungsgemäßen elektronischen Bauelements. Das elektronische Bauelement 10 von 1 umfasst einen Träger 1 mit einer metallischen Oberfläche, ein Halbleiter-Substrat 2 und ein zwischen dem Halbleiter-Substrat 2 und dem Träger 1 angeordnetes Schichtsystem 3. Das Schichtsystem 3 umfasst eine auf dem Halbleiter-Substrat 2 angeordnete elektrische Kontaktschicht 3.1, eine auf der elektrischen Kontaktschicht 3.1 angeordnete Funktionsschicht 3.2, eine auf der Funktionsschicht 3.2 angeordnete Klebeschicht 3.3, und eine zwischen der Klebeschicht 3.3 und dem Träger 1 angeordnete Lötschicht 3.4.
  • Gemäß einer Ausführungsform des elektronischen Bauelements 10 besteht das Halbleiter-Substrat 2 aus einem siliziumbasierten Halbleitermaterial, z. B. ein Substrat aus Si, SiC oder einem anderen siliziumbasierten Material oder einem Verbindungshalbleitermaterial wie z. B. einem III-V-Material wie z. B. GaN. Das Halbleiter-Substrat kann an seiner unteren Oberfläche einen elektrischen Kontaktanschluss, der durch einen hochdotierten n+- oder p+-Bereich ausgebildet ist, umfassen.
  • Gemäß einer Ausführungsform des elektronischen Bauelements 10 umfasst die elektrische Kontaktschicht 3.1 eine Einzelelementschicht aus Al, Ti, Ag oder Cr, oder eine Legierung, die eines oder mehrere dieser Elemente und möglicherweise weitere Elemente enthält.
  • Gemäß einer Ausführungsform des elektronischen Bauelements 10 besteht die Funktionsschicht 3.2 aus einer Sperrschicht. Insbesondere besteht die Funktionsschicht aus einem Material wie Ti, TiW oder W, oder aus Legierungen, die eines oder mehrere dieser Materialien enthalten.
  • Gemäß einer Ausführungsform des elektronischen Bauelements 10 umfasst die Klebeschicht 3.3 eine Einzelelementschicht aus Cu, Au, Ag, Pt oder Ni, oder eine Legierung, die eines oder mehrere dieser Elemente und möglicherweise weitere Elemente enthält.
  • Gemäß einer Ausführungsform des elektronischen Bauelements 10 umfasst die Lötschicht 3.4 eine Einzelelementschicht aus Sn, Zn, In, Ga, Bi oder Cd, oder eine Legierung, die eines oder mehrere dieser Elemente und möglicherweise weitere Elemente enthält.
  • Gemäß einer Ausführungsform des elektronischen Bauelements 10 umfasst die Lötschicht 3.4 ein Einzelelementlötmaterial, das nicht zur Phasenbildung während der Abscheidung neigt. Zusätzlich kann das Lötmaterial selbst frei von Edelmetall, und daher deutlich billiger, sein. Aufgrund der geringeren Kosten kann es viel dicker als AuSn aufgetragen werden, wodurch sich der Die-Befestigungsprozess erleichtert. Abhängig vom Lötmaterial kann die Löttemperatur auch deutlich verringert werden, was zu höherer Beständigkeit führt, da durch die isotherme Erstarrung des Lötmaterials weniger Belastung auf die Lötstelle ausgeübt wird.
  • Gemäß einer Ausführungsform des elektronischen Bauelements 10 weist der Träger 1 einen Metallträger auf, welcher insbesondere Cu, Ni oder Fe oder eine Legierung aufweist, die eines oder mehrere dieser Elemente und möglicherweise weitere Elemente enthält.
  • Gemäß einer Ausführungsform des elektronischen Bauelements 10 ist der Träger 1 mit einer oder mehreren Metallschichten beschichtet. In diesem Fall kann der Träger 1 selbst aus einem nichtmetallischen Träger wie zum Beispiel einem Träger aus einem Keramikmaterial wie Aluminiumoxid bestehen. Insbesondere besteht die oberste Metallschicht aus Au, Ag, Cu, Pd oder Pt, oder aus einer Legierung aus einem oder mehreren dieser Elemente.
  • Gemäß einer Ausführungsform des elektronischen Bauelements 10 werden zwischen dem Träger 1 und der Lötschicht 3.4 oder zwischen einer auf dem Träger 1 angeordneten Metallschicht und der Lötschicht 3.4 intermetallische Phasen gebildet.
  • Gemäß einer Ausführungsform des elektronischen Bauelements 10 werden zwischen der Klebeschicht 3.3 und der Lötschicht 3.4 intermetallische Phasen gebildet.
  • Gemäß einer Ausführungsform des elektronischen Bauelements 10 sind die Klebeschicht 3.3 und die Oberfläche des Trägers 1 oder die Oberfläche einer Metallschicht, mit der die Trägeroberfläche beschichtet ist, aus dem gleichen Grundmaterial gebildet. Insbesondere besteht das Grundmaterial aus Cu, Ag, NiV, Ni oder NiNiP.
  • Gemäß einer Ausführungsform des elektronischen Bauelements 10 weist der Träger 1 ein Leadframe auf.
  • Gemäß einer Ausführungsform des elektronischen Bauelements 10 ist das Schichtsystem 3 frei von Au.
  • Gemäß einer Ausführungsform des elektronischen Bauelements 10 weist das Halbleiter-Substrat 2 eine Dicke im Bereich von 5 μm bis 500 μm auf.
  • Gemäß einer Ausführungsform des elektronischen Bauelements 10 weist die elektrische Kontaktschicht 3.1 eine Dicke im Bereich von 100 nm bis 1 μm auf.
  • Gemäß einer Ausführungsform des elektronischen Bauelements 10 weist die Funktionsschicht 3.2 eine Dicke im Bereich von 50 nm bis 200 nm auf.
  • Gemäß einer Ausführungsform des elektronischen Bauelements 10 weist die Klebeschicht 3.3 eine Dicke im Bereich von 200 nm bis 2 μm auf.
  • Gemäß einer Ausführungsform des elektronischen Bauelements 10 weist die Lötschicht 3.4 eine Dicke im Bereich von 1 μm bis 5 μm auf.
  • Man beachte, dass die obenerwähnten Dickenbereiche auch alle Inkrementalwerte einschließen.
  • Es wurde festgestellt, dass man gute Resultate erzielen kann, wenn die Klebeschicht 3.3 und die Oberfläche des Trägers 1, d. h. das Grundmaterial des Trägers 1 oder eine oberste Metallschicht, mit der der Träger 1 beschichtet ist, aus dem gleichen Grundmaterial, z. B. Cu/Cu, Ag/Ag, NiV/Ni oder NiV/NiNiP, bestehen, was ein binäres oder quasi-binäres Legierungssystem erzeugt, das in der Lötstelle eine charakteristische Schichtstruktur ausbildet. Die Schichtstruktur stellt im Prinzip die Phasenanteile dar, die in einem Phasendiagramm einer binären Legierung angezeigt werden, wobei die Struktur mit einem zweiseitigen Diffusionspaar von, in diesem Fall, Cu/Sn vergleichbar ist.
  • 2a und 2b zeigen schematische Querschnittseitenansichtsdarstellungen zur Veranschaulichung einer Schichtstruktur gemäß einer Ausführung zur Veranschaulichung des Bondmechanismus. 2a zeigt den Träger 1 und aus dem Schichtstapel 3 sind nur die Klebeschicht 3.3 und die Lötschicht 3.4 vor dem Bondprozess gezeigt. 2b zeigt die Schichtstruktur nach dem Bondprozess. Es ist ersichtlich, dass sich auf beiden Seiten der Lötschicht 3.4 intermetallische Phasenschichten gebildet haben. In 2b ist eine erste intermetallische Phasenschicht 3.5 zwischen der Klebeschicht 3.3 und der Lötschicht 3.4 ausgebildet und eine zweite intermetallische Phasenschicht 3.6 ist zwischen der Lötschicht 3.4 und dem Träger 1 ausgebildet. Die erste intermetallische Phasenschicht 3.5 ist reich an dem Metall der Klebeschicht 3.3 und die zweite intermetallische Phasenschicht 3.6 ist reich an dem Metall der Oberfläche des Trägers 1. Die restliche Zwischenlötschicht 3.4 ist noch immer reich an dem Metall der anfänglichen Lötschicht 3.4. Wenn die Materialien des Trägers 1 und der Klebeschicht 3.3 identisch sind, und abhängig von der Schichtdicke, bildet sich möglicherweise nur eine homogene Schicht einer Legierungsphase statt der Lötschicht 3.4, der ersten intermetallischen Phasenschicht 3.5 und der zweiten intermetallischen Phasenschicht 3.6. Je nach der verwendeten Materialkombination können sich auch mehr als zwei unterschiedliche Schichten an der Verbindungsstelle bilden.
  • 3 zeigt ein Flussdiagramm zur Veranschaulichung eines Verfahrens zur Herstellung eines erfindungsgemäßen elektronischen Bauelements. Das Verfahren 30 umfasst die Bereitstellung eines Halbleiter-Substrats (31), das Abscheiden einer elektrischen Kontaktschicht auf dem Halbleiter-Substrat (32), das Abscheiden einer Funktionsschicht auf der elektrischen Kontaktschicht (33), das Abscheiden einer Klebeschicht auf der Funktionsschicht (34), das Abscheiden einer Lötschicht auf der Klebeschicht (35), das Abscheiden einer Schutzschicht auf der Lötschicht (36) und das Anbringen des Halbleiter-Substrats auf einem Träger (37).
  • Gemäß einer Ausführungsform des Verfahrens 30 umfasst das Verfahren weiterhin das Abscheiden einer oder mehrerer der folgenden Schichten: der elektrischen Kontaktschicht, der Funktionsschicht, der Klebeschicht, der Lötschicht und der Schutzschicht mittels physikalischer Dampfabscheidung oder Sputtern, insbesondere innerhalb derselben Verarbeitungsvorrichtung.
  • Gemäß einer Ausführungsform des Verfahrens 30 besteht die elektrische Kontaktschicht aus einer Al- oder Ti-Schicht, die Funktionsschicht aus einer Ti-, TiW- oder W-Schicht, die Klebeschicht aus einer Cu- oder Ag-Schicht, die Lötschicht aus einer Sn-Schicht und die Schutzschicht aus einer Ag- oder Au-Schicht.
  • Weitere Ausführungsformen des Verfahrens 30 können durch Einbeziehung eines Merkmals, das oben in Verbindung mit den Ausführungsformen von 1 und 2 beschrieben wurde, in 3 gebildet werden.
  • 4 zeigt eine schematische Querschnittseitenansichtsdarstellung eines Trägers und eines Halbleiter-Substrats zusammen mit einem Schichtstapel zur Veranschaulichung eines Verfahrens zur Herstellung eines erfindungsgemäßen elektronischen Bauelements. 4 zeigt im Wesentlichen einen Träger 41, insbesondere einen Leadframe, und ein Halbleiter-Substrat 42, das mit dem Träger 41 gebondet werden soll. Zu diesem Zweck wird daraufhin ein Schichtstapel 43 auf die untere Oberfläche des Halbleiter-Substrats 42 abgeschieden. In einem ersten Schritt wird eine elektrische Kontaktschicht 43.1 auf der unteren Oberfläche des Halbleiter-Substrats 42 abgeschieden. In einem zweiten Schritt wird eine Funktionsschicht 43.2 auf der elektrischen Kontaktschicht 43.1 abgeschieden. In einem dritten Schritt wird eine Klebeschicht 43.3 auf der Funktionsschicht 43.2 abgeschieden. In einem vierten Schritt wird eine Lötschicht 43.4 auf der Klebeschicht 43.3 abgeschieden. In einem fünften Schritt wird eine Schutzschicht 43.5 auf der Lötschicht 43.4 abgeschieden. Die Abscheidungsprozesse können mittels physikalischer Dampfabscheidung oder Sputtern stattfinden.
  • Gemäß einer Ausführungsform hat die Schutzschicht 43.5 eine Dicke in einem Bereich von 50 nm bis 300 nm. Somit kann die Schutzschicht 43.5 so dünn hergestellt werden, dass sie im Endprodukt wie dem in 1 gezeigten praktisch verschwindet. Die Schutzschicht 43.5 verhindert eine Oxidierung der Lötschicht 43.4.
  • In der Ausführungsform von 4 werden eine oder mehr Metallschichten 41.1 auf dem Träger 41 abgeschieden. Die Metallschicht 41.1 bzw. die oberste Metallschicht, wenn zwei oder mehr Metallschichten vorhanden sind, besteht aus Au, Ag, Cu, Pd oder Pt, oder aus einer Legierung eines oder mehrerer dieser Elemente.
  • Schließlich wird nach der Herstellung des Schichtstapels 43 das Halbleiter-Substrat 42 zusammen mit dem Schichtstapel 43 auf der oberen Oberfläche des Trägers 41 bzw. der oberen Oberfläche der obersten Metallschicht 41.1 gebondet.
  • Zusätzlich sollte bemerkt werden, dass das aus dem Halbleiter-Substrat 42 und dem Schichtstapel 43 bestehende System bei einer Die-Befestigungstemperatur von 300°C gelötet werden kann, was zu einer geringeren Die-Befestigungsbelastung verglichen mit den 350°C, mit der die AuSn-Lötschicht derzeit befestigt wird, führt.
  • Obwohl die Erfindung mit Bezug auf eine oder mehrere Implementierungen dargestellt und beschrieben wurde, können Änderungen und/oder Modifikationen an den veranschaulichten Beispielen vorgenommen werden, ohne von dem Gedanken und Schutzumfang der angehängten Ansprüche abzuweichen. In besonderem Hinblick auf die verschiedenen durch die oben beschriebenen Komponenten oder Strukturen (Baugruppen, Bauelemente, Schaltungen, Systeme usw.) ausgeführten Funktionen sollen die zur Beschreibung solcher Komponenten verwendeten Begriffe (einschließlich eines Verweises auf ein ”Mittel”), sofern nicht anders angegeben, eine beliebige Komponente oder Struktur bezeichnen, die die spezifizierte Funktion der beschriebenen Komponente ausführt (z. B. die funktional äquivalent ist), auch wenn sie strukturell nicht mit der offenbarten Struktur, die die Funktion in den hier dargestellten beispielhaften Implementierungen der Erfindung ausführt, äquivalent ist.

Claims (24)

  1. Elektronisches Bauelement, umfassend: einen Träger mit einer metallischen Oberfläche; ein an dem Träger angebrachtes Halbleiter-Substrat; und ein zwischen dem Halbleiter-Substrat und dem Träger angeordnetes Schichtsystem; umfassend: eine auf dem Halbleiter-Substrat angeordnete elektrische Kontaktschicht; eine auf der elektrischen Kontaktschicht angeordnete Funktionsschicht; eine auf der Funktionsschicht angeordnete Klebeschicht; und eine zwischen der Klebeschicht und dem Träger angeordnete Lötschicht.
  2. Elektronisches Bauelement nach Anspruch 1, wobei das Halbleiter-Substrat ein siliziumbasiertes Halbleitermaterial umfasst.
  3. Elektronisches Bauelement nach Anspruch 1 oder 2, wobei die elektrische Kontaktschicht eine Einzelelementschicht aus Al, Ti, Ag oder Cr, oder eine Legierung aus einem oder mehrerer dieser Elemente umfasst.
  4. Elektronisches Bauelement nach einem der vorherigen Ansprüche, wobei die Funktionsschicht eine Sperrschicht umfasst.
  5. Elektronisches Bauelement nach einem der vorherigen Ansprüche, wobei die Funktionsschicht Ti, TiW oder W, oder Legierungen, die diese Materialien enthalten, umfasst.
  6. Elektronisches Bauelement nach einem der vorherigen Ansprüche, wobei die Klebeschicht eine Einzelelementschicht aus Cu, Au, Ag, Pt oder Ni, oder eine Legierung, die eines oder mehrere dieser Elemente enthält, umfasst.
  7. Elektronisches Bauelement nach einem oder mehreren der vorherigen Ansprüche, wobei die Lötschicht eine Einzelelementschicht aus Sn, Zn, In, Ga, Bi oder Cd, oder eine Legierung, die eines oder mehrere dieser Elemente enthält, umfasst.
  8. Elektronisches Bauelement nach Anspruch 7, wobei die Lötschicht eine Legierung aus Sn, Zn, In, Ga, Bi und/oder Cd umfasst und auch AuSn, SnAg, CuSn oder CuSnAg umfasst.
  9. Elektronisches Bauelement nach einem oder mehreren der vorherigen Ansprüche, wobei der Träger Cu, Ni oder Fe oder eine Legierung, die eines oder mehrere dieser Elemente enthält, umfasst.
  10. Elektronisches Bauelement nach einem oder mehreren der vorherigen Ansprüche, wobei die Oberfläche des Trägers mit einer oder mehreren Metallschichten beschichtet ist.
  11. Elektronisches Bauelement nach einem oder mehreren der vorherigen Ansprüche, wobei die oberste Metallschicht Au, Ag, Cu, Pd oder Pt oder eine Legierung aus einem oder mehreren dieser Elemente umfasst.
  12. Elektronisches Bauelement nach einem oder mehreren der vorherigen Ansprüche, wobei zwischen der Klebeschicht und der Lötschicht intermetallische Phasen gebildet werden.
  13. Elektronisches Bauelement nach einem oder mehreren der vorherigen Ansprüche, wobei zwischen dem Träger und der Lötschicht oder zwischen einer auf dem Träger angeordneten Metallschicht und der Lötschicht intermetallische Phasen gebildet sind.
  14. Elektronisches Bauelement nach einem oder mehreren der vorherigen Ansprüche, wobei die Klebeschicht und eine Trägeroberfläche oder eine Oberfläche einer Metallschicht, mit der die Trägeroberfläche beschichtet ist, aus dem gleichen Grundmaterial gebildet sind.
  15. Elektronisches Bauelement nach Anspruch 14, wobei das Grundmaterial Cu, Ag, NiV, Ni oder NiNiP umfasst.
  16. Elektronisches Bauelement nach einem der vorherigen Ansprüche, wobei der Träger einen Leadframe umfasst.
  17. Elektronisches Bauelement nach einem der vorherigen Ansprüche, wobei das Schichtsystem frei von Au ist.
  18. Elektronisches Bauelement, umfassend: einen Leadframe; ein über dem Leadframe angebrachter Halbleiterchip; und ein zwischen dem Halbleiterchip und dem Leadframe angeordnetes Schichtsystem, umfassend: eine auf dem Halbleiterchip angeordnete Al- oder Ti-Schicht; eine auf der Al- oder Ti-Schicht angeordnete Ti-, TiW- oder W-Schicht; eine auf der Ti-, TiW- oder W-Schicht angeordnete Cu- oder Ag-Schicht; eine zwischen der Cu- oder Ag-Schicht und dem Leadframe angeordnete Sn-Schicht.
  19. Elektronisches Bauelement nach Anspruch 18, wobei der Leadframe Cu umfasst.
  20. Elektronisches Bauelement nach Anspruch 18 oder 19, wobei das Schichtsystem frei von Au ist.
  21. Elektronisches Bauelement nach einem der Ansprüche 18 bis 20, wobei eine Oberfläche des Leadframes mit einer oder mehreren Metallschichten beschichtet ist.
  22. Verfahren zur Herstellung eines elektronischen Bauelements, wobei das Verfahren Folgendes umfasst: Bereitstellung eines Halbleiter-Substrats; Abscheiden einer elektrischen Kontaktschicht auf dem Halbleiter-Substrat; Abscheiden einer Funktionsschicht auf der elektrischen Kontaktschicht; Abscheiden einer Klebeschicht auf der Funktionsschicht; Abscheiden einer Lötschicht auf der Klebeschicht; Abscheiden einer Schutzschicht auf der Lötschicht; und Anbringen des Halbleiter-Substrats auf einem Träger.
  23. Verfahren nach Anspruch 22, wobei das Abscheiden der elektrischen Kontaktschicht, der Funktionsschicht, der Klebeschicht, der Lötschicht und/oder der Schutzschicht das Abscheiden mittels physikalischer Dampfabscheidung umfasst.
  24. Verfahren nach Anspruch 22 oder 23, wobei die elektrische Kontaktschicht eine Al- oder Ti-Schicht umfasst, die Funktionsschicht eine Ti-, TiW- oder W-Schicht umfasst, die Klebeschicht eine Cu- oder Ag-Schicht umfasst, die Lötschicht eine Sn-Schicht umfasst, und die Schutzschicht eine Ag- oder Au-Schicht umfasst.
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