DE102011122918B3 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

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Publication number
DE102011122918B3
DE102011122918B3 DE102011122918.7A DE102011122918A DE102011122918B3 DE 102011122918 B3 DE102011122918 B3 DE 102011122918B3 DE 102011122918 A DE102011122918 A DE 102011122918A DE 102011122918 B3 DE102011122918 B3 DE 102011122918B3
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DE
Germany
Prior art keywords
wafer
main surface
region
circuit pattern
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE102011122918.7A
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German (de)
English (en)
Inventor
Yoshihiro Tsukahara
Shinsuke Watanabe
Ko Kanaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
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Publication of DE102011122918B3 publication Critical patent/DE102011122918B3/de
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H—ELECTRICITY
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    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
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    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01—ELECTRIC ELEMENTS
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/1025—Semiconducting materials
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    • H01L2924/162—Disposition
    • H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
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    • H01L2924/351—Thermal stress

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dicing (AREA)
DE102011122918.7A 2010-07-29 2011-07-13 Halbleitervorrichtung Expired - Fee Related DE102011122918B3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-170570 2010-07-29
JP2010170570A JP5521862B2 (ja) 2010-07-29 2010-07-29 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
DE102011122918B3 true DE102011122918B3 (de) 2016-05-19

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ID=45525895

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102011079105A Withdrawn DE102011079105A1 (de) 2010-07-29 2011-07-13 Halbleitervorrichtung und Verfahren zum Herstellen derselben
DE102011122918.7A Expired - Fee Related DE102011122918B3 (de) 2010-07-29 2011-07-13 Halbleitervorrichtung

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Application Number Title Priority Date Filing Date
DE102011079105A Withdrawn DE102011079105A1 (de) 2010-07-29 2011-07-13 Halbleitervorrichtung und Verfahren zum Herstellen derselben

Country Status (5)

Country Link
US (1) US8728866B2 (enExample)
JP (1) JP5521862B2 (enExample)
CN (1) CN102347243B (enExample)
DE (2) DE102011079105A1 (enExample)
TW (1) TWI446429B (enExample)

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JP2015115446A (ja) * 2013-12-11 2015-06-22 株式会社東芝 半導体装置の製造方法
JP6221736B2 (ja) * 2013-12-25 2017-11-01 三菱電機株式会社 半導体装置
JP6215755B2 (ja) * 2014-04-14 2017-10-18 ルネサスエレクトロニクス株式会社 半導体装置
TWI566288B (zh) * 2014-07-14 2017-01-11 矽品精密工業股份有限公司 切割用載具及切割方法
JP6314731B2 (ja) 2014-08-01 2018-04-25 株式会社ソシオネクスト 半導体装置及び半導体装置の製造方法
JP6511141B2 (ja) * 2015-07-28 2019-05-15 日本電信電話株式会社 光スイッチ
US10224294B2 (en) 2015-08-18 2019-03-05 Mitsubishi Electric Corporation Semiconductor device
US10393532B2 (en) * 2015-10-20 2019-08-27 International Business Machines Corporation Emergency responsive navigation
US10825694B2 (en) * 2017-02-02 2020-11-03 Hitachi Chemical Company, Ltd. Method for manufacturing electronic component, resin composition for temporary protection, and resin film for temporary protection
JP2019192729A (ja) * 2018-04-23 2019-10-31 株式会社村田製作所 半導体装置
DE112018007677B4 (de) * 2018-05-28 2023-10-12 Mitsubishi Electric Corporation Verfahren zur Herstellung eines Halbleitergerätes
JP7034105B2 (ja) 2019-01-18 2022-03-11 三菱電機株式会社 電力用半導体装置の製造方法、電力用半導体装置および電力変換装置
KR102785840B1 (ko) 2019-12-13 2025-03-26 삼성전자주식회사 반도체 패키지
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CN102347243A (zh) 2012-02-08
CN102347243B (zh) 2014-08-20
JP2012033615A (ja) 2012-02-16
US8728866B2 (en) 2014-05-20
TWI446429B (zh) 2014-07-21
TW201205656A (en) 2012-02-01
US20120025366A1 (en) 2012-02-02
DE102011079105A1 (de) 2012-04-12
JP5521862B2 (ja) 2014-06-18

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