JP5521862B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5521862B2
JP5521862B2 JP2010170570A JP2010170570A JP5521862B2 JP 5521862 B2 JP5521862 B2 JP 5521862B2 JP 2010170570 A JP2010170570 A JP 2010170570A JP 2010170570 A JP2010170570 A JP 2010170570A JP 5521862 B2 JP5521862 B2 JP 5521862B2
Authority
JP
Japan
Prior art keywords
wafer
main surface
metal film
main body
lid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010170570A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012033615A (ja
JP2012033615A5 (enExample
Inventor
康 金谷
良洋 塚原
伸介 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2010170570A priority Critical patent/JP5521862B2/ja
Priority to US13/079,055 priority patent/US8728866B2/en
Priority to TW100111754A priority patent/TWI446429B/zh
Priority to DE102011122918.7A priority patent/DE102011122918B3/de
Priority to DE102011079105A priority patent/DE102011079105A1/de
Priority to CN201110213254.8A priority patent/CN102347243B/zh
Publication of JP2012033615A publication Critical patent/JP2012033615A/ja
Publication of JP2012033615A5 publication Critical patent/JP2012033615A5/ja
Application granted granted Critical
Publication of JP5521862B2 publication Critical patent/JP5521862B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/60—Seals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/942—Dispositions of bond pads relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Dicing (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2010170570A 2010-07-29 2010-07-29 半導体装置の製造方法 Expired - Fee Related JP5521862B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010170570A JP5521862B2 (ja) 2010-07-29 2010-07-29 半導体装置の製造方法
US13/079,055 US8728866B2 (en) 2010-07-29 2011-04-04 Method for manufacturing semiconductor device
TW100111754A TWI446429B (zh) 2010-07-29 2011-04-06 半導體裝置及其製造方法
DE102011079105A DE102011079105A1 (de) 2010-07-29 2011-07-13 Halbleitervorrichtung und Verfahren zum Herstellen derselben
DE102011122918.7A DE102011122918B3 (de) 2010-07-29 2011-07-13 Halbleitervorrichtung
CN201110213254.8A CN102347243B (zh) 2010-07-29 2011-07-28 半导体装置及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010170570A JP5521862B2 (ja) 2010-07-29 2010-07-29 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2012033615A JP2012033615A (ja) 2012-02-16
JP2012033615A5 JP2012033615A5 (enExample) 2013-07-04
JP5521862B2 true JP5521862B2 (ja) 2014-06-18

Family

ID=45525895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010170570A Expired - Fee Related JP5521862B2 (ja) 2010-07-29 2010-07-29 半導体装置の製造方法

Country Status (5)

Country Link
US (1) US8728866B2 (enExample)
JP (1) JP5521862B2 (enExample)
CN (1) CN102347243B (enExample)
DE (2) DE102011122918B3 (enExample)
TW (1) TWI446429B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103227116B (zh) * 2013-03-29 2016-01-20 日月光半导体制造股份有限公司 透光壳体及其制造方法与应用其的光学组件
JP2015115446A (ja) * 2013-12-11 2015-06-22 株式会社東芝 半導体装置の製造方法
JP6221736B2 (ja) * 2013-12-25 2017-11-01 三菱電機株式会社 半導体装置
JP6215755B2 (ja) * 2014-04-14 2017-10-18 ルネサスエレクトロニクス株式会社 半導体装置
TWI566288B (zh) * 2014-07-14 2017-01-11 矽品精密工業股份有限公司 切割用載具及切割方法
JP6314731B2 (ja) 2014-08-01 2018-04-25 株式会社ソシオネクスト 半導体装置及び半導体装置の製造方法
WO2017017955A1 (ja) * 2015-07-28 2017-02-02 日本電信電話株式会社 光モジュール
DE112016003737T5 (de) 2015-08-18 2018-05-03 Mitsubishi Electric Corporation Halbleitervorrichtung
US10393532B2 (en) * 2015-10-20 2019-08-27 International Business Machines Corporation Emergency responsive navigation
WO2018143014A1 (ja) * 2017-02-02 2018-08-09 日立化成株式会社 電子部品の製造方法、仮保護用樹脂組成物及び仮保護用樹脂フィルム
JP2019192729A (ja) * 2018-04-23 2019-10-31 株式会社村田製作所 半導体装置
JP6927430B2 (ja) * 2018-05-28 2021-08-25 三菱電機株式会社 半導体装置の製造方法
JP7034105B2 (ja) * 2019-01-18 2022-03-11 三菱電機株式会社 電力用半導体装置の製造方法、電力用半導体装置および電力変換装置
KR102785840B1 (ko) 2019-12-13 2025-03-26 삼성전자주식회사 반도체 패키지
US11948893B2 (en) * 2021-12-21 2024-04-02 Qorvo Us, Inc. Electronic component with lid to manage radiation feedback

Family Cites Families (20)

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Publication number Priority date Publication date Assignee Title
EP0544329A3 (en) 1991-11-28 1993-09-01 Kabushiki Kaisha Toshiba Semiconductor package
JP2501279B2 (ja) 1991-11-29 1996-05-29 株式会社東芝 半導体パッケ―ジ
JP2001024079A (ja) 1999-07-05 2001-01-26 Seiko Epson Corp 電子部品の封止構造
US7026223B2 (en) 2002-03-28 2006-04-11 M/A-Com, Inc Hermetic electric component package
JP4342174B2 (ja) 2002-12-27 2009-10-14 新光電気工業株式会社 電子デバイス及びその製造方法
JP2005057136A (ja) 2003-08-06 2005-03-03 Matsushita Electric Ind Co Ltd 半導体装置
JP4312631B2 (ja) 2004-03-03 2009-08-12 三菱電機株式会社 ウエハレベルパッケージ構造体とその製造方法、及びそのウエハレベルパッケージ構造体から分割された素子
JP4993848B2 (ja) * 2004-05-28 2012-08-08 三洋電機株式会社 配線基材
KR100594716B1 (ko) 2004-07-27 2006-06-30 삼성전자주식회사 공동부를 구비한 캡 웨이퍼, 이를 이용한 반도체 칩, 및그 제조방법
FR2879889B1 (fr) 2004-12-20 2007-01-26 United Monolithic Semiconduct Boitier miniature hyperfrequence et procede de fabrication du boitier
EP1856728B1 (en) * 2005-03-02 2008-10-22 Koninklijke Philips Electronics N.V. A method of manufacturing semiconductor packages and packages made
US7495462B2 (en) 2005-03-24 2009-02-24 Memsic, Inc. Method of wafer-level packaging using low-aspect ratio through-wafer holes
JP2007005948A (ja) * 2005-06-22 2007-01-11 Alps Electric Co Ltd 電子部品及びその製造方法
US20070004079A1 (en) 2005-06-30 2007-01-04 Geefay Frank S Method for making contact through via contact to an offset contactor inside a cap for the wafer level packaging of FBAR chips
JP2007019107A (ja) * 2005-07-05 2007-01-25 Shinko Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
KR100752713B1 (ko) * 2005-10-10 2007-08-29 삼성전기주식회사 이미지센서의 웨이퍼 레벨 칩 스케일 패키지 및 그제조방법
US7393758B2 (en) * 2005-11-03 2008-07-01 Maxim Integrated Products, Inc. Wafer level packaging process
KR100831405B1 (ko) 2006-10-02 2008-05-21 (주) 파이오닉스 웨이퍼 본딩 패키징 방법
JP4860552B2 (ja) 2007-06-08 2012-01-25 日本オプネクスト株式会社 半導体装置
JP5344336B2 (ja) * 2008-02-27 2013-11-20 株式会社ザイキューブ 半導体装置

Also Published As

Publication number Publication date
TWI446429B (zh) 2014-07-21
US20120025366A1 (en) 2012-02-02
TW201205656A (en) 2012-02-01
JP2012033615A (ja) 2012-02-16
CN102347243A (zh) 2012-02-08
DE102011079105A1 (de) 2012-04-12
DE102011122918B3 (de) 2016-05-19
CN102347243B (zh) 2014-08-20
US8728866B2 (en) 2014-05-20

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