JP2008532307A - 半導体パッケージ及び作成パッケージを製造する方法 - Google Patents
半導体パッケージ及び作成パッケージを製造する方法 Download PDFInfo
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Abstract
Description
−基板面及び反対側の相互接続面を持ち、前記相互接続面に相互接続構造を具備する複数の半導体デバイスを持つウエハーを供給するステップ、
−前記相互接続構造上に樹脂層を適用するステップ、
−接着剤を用いて第1の側面を持つ前記ウエハーをキャリアに取り付けるステップ、
−前記ウエハーを前記第2の側面から薄化するステップ、
−他の樹脂層を前記ウエハーの第2の側面に適用するステップ、及び
−これにより形成される半導体パッケージの少なくとも幾つかを前記キャリアから取り外すステップ
を有する複数の半導体パッケージを製造する方法にも関する。
Claims (17)
- 第1の側面及び第2の側面を持つ柔軟な半導体パッケージであり、前記第1の側面と前記第2の側面との間に薄化した背面基板及び相互接続構造を持つ半導体デバイスが存在し、外部接触用の接触手段及び第1の樹脂層は前記第1の側面に存在し、前記接触手段は前記相互接続構造に結合され、前記半導体デバイスは前記第2の側面において第2の樹脂層で少なくとも略覆われている柔軟な半導体パッケージにおいて、
前記接触手段は、前記第1の樹脂層上に存在し、前記第1の樹脂層を通り延在している再分配トラックを用いて前記相互接続構造に結合され、保護層が前記第1の樹脂層及び前記再分配トラックを少なくとも略覆っていることを特徴とする柔軟な半導体パッケージ。 - 前記第2の樹脂層も保護層で覆われている請求項1に記載の柔軟な半導体パッケージ。
- 前記半導体デバイスは、絶縁層を持つ基板を具備し、個々の前記樹脂層にある開口に隣接する及び/又は開口にある前記保護層は前記絶縁層まで延在し、それと共に前記半導体デバイスの気密封止を形成する請求項2に記載の柔軟な半導体パッケージ。
- 前記保護層は無機物を有する請求項1に記載のパッケージ。
- 前記樹脂層の1つは丸くなったエッジを具備している請求項1に記載の柔軟な半導体パッケージ。
- 前記半導体デバイスは基板面及び相互接続面を持ち、前記基板面に半導体基板が存在し、前記相互接続面に前記相互接続構造が存在し、前記基板面に前記第1の樹脂層が存在し、及び前記第2の樹脂層は前記相互接続面に存在している請求項1に記載のパッケージ。
- 前記接触手段は、前記保護層を通り延在している接触パッドである請求項1に記載の柔軟な半導体パッケージ。
- 少なくとも1つの接触パッドが前記第2の樹脂層にあり、前記保護層にある開口を介し露出している請求項2に記載の柔軟な半導体パッケージ。
- 請求項7又は8に記載の柔軟な半導体パッケージ、及びバンプを用いて前記接触パッドに結合されている接触パッドを具備している他の電子デバイスを有する組立体。
- −基板面及び反対側に相互接続面を持ち、前記相互接続面に相互接続構造を具備する複数の半導体デバイスを持つウエハーを供給するステップ、
−前記相互接続構造に樹脂層を適用するステップ、
−接着剤を用いて第1の側面を持つ前記ウエハーをキャリアに取り付けるステップ、
−前記ウエハーを前記第2の側面から薄化するステップ、
−他の樹脂層を前記ウエハーの前記第2の側面に適用するステップ、
−これにより形成される前記半導体パッケージの少なくとも幾つかを前記キャリアから取り外すステップ
を有する複数の半導体パッケージを製造する方法において、
前記接触手段は、前記第1の樹脂層を通り延在している再配分トラックを用いて前記相互接続構造に結合される第1の樹脂層上に定義され、保護層が前記第1の樹脂層及び前記再配分トラックに適用されることを特徴とする複数の半導体パッケージを製造する方法。 - 前記ウエハーの前記第2の側面上にある前記樹脂層は、分離レーンを定義するようにパターン形成され、他の保護層は、このパターン形成された前記樹脂層に適用される請求項10に記載の方法。
- 前記ウエハーは酸化被膜を持ち、前記保護層を適用する前に、前記分離レーンにおける前記酸化被膜は取り除かれる請求項10に記載の方法。
- 前記ウエハーの前記第2の側面上にある前記樹脂層は、前記分離レーンに丸くなったエッジを持つようにパターン形成される請求項10又は11に記載の方法。
- 前記接触手段は接触パッドであり、はんだはキャップ形式で前記接触パッドに適用される請求項10に記載の方法。
- 前記はんだバンプは、所望の混合物の槽に浸漬することにより適用される請求項14に記載の方法。
- 前記パッケージが前記樹脂層を分割することにより個々に区別されることができるように、前記樹脂層の1つが前記パッケージの間に連続している、請求項1に記載の複数の半導体パッケージを有する中間生成物。
- 前記樹脂層を分割することにより、請求項15に記載の中間生成物を分離する方法。
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EP05101593 | 2005-03-02 | ||
PCT/IB2006/050599 WO2006092754A2 (en) | 2005-03-02 | 2006-02-27 | A method of manufacturing a semiconductor packages and packages made |
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JP2008532307A5 JP2008532307A5 (ja) | 2009-04-16 |
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JP2007557647A Pending JP2008532307A (ja) | 2005-03-02 | 2006-02-27 | 半導体パッケージ及び作成パッケージを製造する方法 |
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US (1) | US20080150118A1 (ja) |
EP (1) | EP1856728B1 (ja) |
JP (1) | JP2008532307A (ja) |
CN (1) | CN100514591C (ja) |
AT (1) | ATE412251T1 (ja) |
DE (1) | DE602006003316D1 (ja) |
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WO2007004137A2 (en) * | 2005-07-01 | 2007-01-11 | Koninklijke Philips Electronics N.V. | Electronic device |
JP2009516369A (ja) * | 2005-11-11 | 2009-04-16 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | チップアセンブリ及びそのチップアセンブリの製造方法 |
JP4956128B2 (ja) * | 2006-10-02 | 2012-06-20 | ルネサスエレクトロニクス株式会社 | 電子装置の製造方法 |
US8093689B2 (en) * | 2007-07-02 | 2012-01-10 | Infineon Technologies Ag | Attachment member for semiconductor sensor device |
US8114708B2 (en) * | 2008-09-30 | 2012-02-14 | General Electric Company | System and method for pre-patterned embedded chip build-up |
TW201114003A (en) * | 2008-12-11 | 2011-04-16 | Xintec Inc | Chip package structure and method for fabricating the same |
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CN104133314B (zh) * | 2009-05-02 | 2019-07-12 | 株式会社半导体能源研究所 | 显示设备 |
US8212340B2 (en) * | 2009-07-13 | 2012-07-03 | Advanced Semiconductor Engineering, Inc. | Chip package and manufacturing method thereof |
US8952519B2 (en) * | 2010-01-13 | 2015-02-10 | Chia-Sheng Lin | Chip package and fabrication method thereof |
JP5521862B2 (ja) * | 2010-07-29 | 2014-06-18 | 三菱電機株式会社 | 半導体装置の製造方法 |
US10446442B2 (en) * | 2016-12-21 | 2019-10-15 | Globalfoundries Inc. | Integrated circuit chip with molding compound handler substrate and method |
KR20180136148A (ko) * | 2017-06-14 | 2018-12-24 | 에스케이하이닉스 주식회사 | 범프를 구비하는 반도체 장치 |
KR102435517B1 (ko) * | 2018-04-12 | 2022-08-22 | 에스케이하이닉스 주식회사 | 칩 스택 패키지 |
KR102545168B1 (ko) * | 2019-03-26 | 2023-06-19 | 삼성전자주식회사 | 인터포저 및 이를 포함하는 반도체 패키지 |
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EP1041624A1 (en) * | 1999-04-02 | 2000-10-04 | Interuniversitair Microelektronica Centrum Vzw | Method of transferring ultra-thin substrates and application of the method to the manufacture of a multilayer thin film device |
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- 2006-02-27 WO PCT/IB2006/050599 patent/WO2006092754A2/en not_active Application Discontinuation
- 2006-02-27 DE DE602006003316T patent/DE602006003316D1/de not_active Expired - Fee Related
- 2006-02-27 CN CNB2006800064736A patent/CN100514591C/zh not_active Expired - Fee Related
- 2006-02-27 AT AT06710970T patent/ATE412251T1/de not_active IP Right Cessation
- 2006-02-27 EP EP06710970A patent/EP1856728B1/en not_active Not-in-force
- 2006-02-27 JP JP2007557647A patent/JP2008532307A/ja active Pending
- 2006-02-27 US US11/816,750 patent/US20080150118A1/en not_active Abandoned
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TW200711081A (en) | 2007-03-16 |
CN101133484A (zh) | 2008-02-27 |
ATE412251T1 (de) | 2008-11-15 |
CN100514591C (zh) | 2009-07-15 |
WO2006092754A2 (en) | 2006-09-08 |
US20080150118A1 (en) | 2008-06-26 |
DE602006003316D1 (de) | 2008-12-04 |
EP1856728A2 (en) | 2007-11-21 |
WO2006092754A3 (en) | 2007-01-18 |
EP1856728B1 (en) | 2008-10-22 |
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