DE102010051851A1 - Dünnschichttransistor-Zusammensetzungen und damit verbundene Verfahren - Google Patents

Dünnschichttransistor-Zusammensetzungen und damit verbundene Verfahren Download PDF

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Publication number
DE102010051851A1
DE102010051851A1 DE102010051851A DE102010051851A DE102010051851A1 DE 102010051851 A1 DE102010051851 A1 DE 102010051851A1 DE 102010051851 A DE102010051851 A DE 102010051851A DE 102010051851 A DE102010051851 A DE 102010051851A DE 102010051851 A1 DE102010051851 A1 DE 102010051851A1
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DE
Germany
Prior art keywords
film
layer
substrate
semiconductor material
polyimide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102010051851A
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German (de)
English (en)
Inventor
Brian C. Pickerington Auman
Thomas Edward Orient Carney
Kostantinos Kourtakis
Salah Wilmington Boussaad
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EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of DE102010051851A1 publication Critical patent/DE102010051851A1/de
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09D179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wood Science & Technology (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
DE102010051851A 2009-11-20 2010-11-18 Dünnschichttransistor-Zusammensetzungen und damit verbundene Verfahren Withdrawn DE102010051851A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/622,789 2009-11-20
US12/622,789 US8319299B2 (en) 2009-11-20 2009-11-20 Thin film transistor compositions, and methods relating thereto

Publications (1)

Publication Number Publication Date
DE102010051851A1 true DE102010051851A1 (de) 2011-05-26

Family

ID=43902287

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102010051851A Withdrawn DE102010051851A1 (de) 2009-11-20 2010-11-18 Dünnschichttransistor-Zusammensetzungen und damit verbundene Verfahren

Country Status (5)

Country Link
US (1) US8319299B2 (enExample)
JP (1) JP5731171B2 (enExample)
KR (1) KR20110056241A (enExample)
CN (1) CN102074480B (enExample)
DE (1) DE102010051851A1 (enExample)

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KR101125567B1 (ko) * 2009-12-24 2012-03-22 삼성모바일디스플레이주식회사 고분자 기판 및 그 제조 방법과 상기 고분자 기판을 포함하는 표시 장치 및 그 제조 방법
KR101728486B1 (ko) * 2010-03-31 2017-04-20 삼성디스플레이 주식회사 박막 트랜지스터, 그 제조 방법 및 이를 포함하는 플렉시블 디스플레이 장치
CN103354243B (zh) 2013-06-28 2016-01-06 京东方科技集团股份有限公司 一种薄膜晶体管、其制备方法及相关装置
CN106893121B (zh) * 2015-12-17 2020-07-03 深圳瑞华泰薄膜科技股份有限公司 一种高尺寸稳定型聚酰亚胺薄膜及其制备方法
US10424670B2 (en) 2016-12-30 2019-09-24 Intel Corporation Display panel with reduced power consumption
CN113471249B (zh) * 2020-03-31 2024-09-20 华为技术有限公司 一种显示组件、显示装置和指纹识别方法
CN116067241B (zh) * 2023-03-02 2023-08-29 中国工程物理研究院激光聚变研究中心 一种纤维改性的三明治飞片结构及其制备方法

Citations (10)

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US5961804A (en) 1997-03-18 1999-10-05 Massachusetts Institute Of Technology Microencapsulated electrophoretic display
US6017584A (en) 1995-07-20 2000-01-25 E Ink Corporation Multi-color electrophoretic displays and materials for making the same
US6067185A (en) 1997-08-28 2000-05-23 E Ink Corporation Process for creating an encapsulated electrophoretic display
US6118426A (en) 1995-07-20 2000-09-12 E Ink Corporation Transducers and indicators having printed displays
US6120839A (en) 1995-07-20 2000-09-19 E Ink Corporation Electro-osmotic displays and materials for making the same
US6120588A (en) 1996-07-19 2000-09-19 E Ink Corporation Electronically addressable microencapsulated ink and display thereof
US6124851A (en) 1995-07-20 2000-09-26 E Ink Corporation Electronic book with multiple page displays
US6130774A (en) 1998-04-27 2000-10-10 E Ink Corporation Shutter mode microencapsulated electrophoretic display
US6825068B2 (en) 2000-04-18 2004-11-30 E Ink Corporation Process for fabricating thin film transistors

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JPS63312328A (ja) 1987-06-15 1988-12-20 Tokai Carbon Co Ltd ＳｉＣウイスカ−強化ポリイミド樹脂の製造方法
US5837767A (en) 1994-10-31 1998-11-17 Ntn Corporation Stripping fingers
JP3679224B2 (ja) 1996-05-10 2005-08-03 Ｎｔｎ株式会社 分離爪
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6017584A (en) 1995-07-20 2000-01-25 E Ink Corporation Multi-color electrophoretic displays and materials for making the same
US6118426A (en) 1995-07-20 2000-09-12 E Ink Corporation Transducers and indicators having printed displays
US6120839A (en) 1995-07-20 2000-09-19 E Ink Corporation Electro-osmotic displays and materials for making the same
US6124851A (en) 1995-07-20 2000-09-26 E Ink Corporation Electronic book with multiple page displays
US6120588A (en) 1996-07-19 2000-09-19 E Ink Corporation Electronically addressable microencapsulated ink and display thereof
US5930026A (en) 1996-10-25 1999-07-27 Massachusetts Institute Of Technology Nonemissive displays and piezoelectric power supplies therefor
US6130773A (en) 1996-10-25 2000-10-10 Massachusetts Institute Of Technology Nonemissive displays and piezoelectric power supplies therefor
US5961804A (en) 1997-03-18 1999-10-05 Massachusetts Institute Of Technology Microencapsulated electrophoretic display
US6067185A (en) 1997-08-28 2000-05-23 E Ink Corporation Process for creating an encapsulated electrophoretic display
US6130774A (en) 1998-04-27 2000-10-10 E Ink Corporation Shutter mode microencapsulated electrophoretic display
US6172798B1 (en) 1998-04-27 2001-01-09 E Ink Corporation Shutter mode microencapsulated electrophoretic display
US6825068B2 (en) 2000-04-18 2004-11-30 E Ink Corporation Process for fabricating thin film transistors

Also Published As

Publication number Publication date
JP2011109108A (ja) 2011-06-02
JP5731171B2 (ja) 2015-06-10
KR20110056241A (ko) 2011-05-26
CN102074480B (zh) 2015-04-01
US8319299B2 (en) 2012-11-27
CN102074480A (zh) 2011-05-25
US20110121296A1 (en) 2011-05-26

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R005 Application deemed withdrawn due to failure to request examination