JP5731171B2 - 薄膜トランジスタ組成物およびこれに関する方法 - Google Patents

薄膜トランジスタ組成物およびこれに関する方法 Download PDF

Info

Publication number
JP5731171B2
JP5731171B2 JP2010259876A JP2010259876A JP5731171B2 JP 5731171 B2 JP5731171 B2 JP 5731171B2 JP 2010259876 A JP2010259876 A JP 2010259876A JP 2010259876 A JP2010259876 A JP 2010259876A JP 5731171 B2 JP5731171 B2 JP 5731171B2
Authority
JP
Japan
Prior art keywords
substrate
layer
film
semiconductor material
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010259876A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011109108A (ja
JP2011109108A5 (enExample
Inventor
シー．オーマン ブライアン
シー．オーマン ブライアン
エドワード カーニー トーマス
エドワード カーニー トーマス
クルタキス コスタンティノス
クルタキス コスタンティノス
ブサード サラ
ブサード サラ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of JP2011109108A publication Critical patent/JP2011109108A/ja
Publication of JP2011109108A5 publication Critical patent/JP2011109108A5/ja
Application granted granted Critical
Publication of JP5731171B2 publication Critical patent/JP5731171B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09D179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2010259876A 2009-11-20 2010-11-22 薄膜トランジスタ組成物およびこれに関する方法 Expired - Fee Related JP5731171B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/622,789 2009-11-20
US12/622,789 US8319299B2 (en) 2009-11-20 2009-11-20 Thin film transistor compositions, and methods relating thereto

Publications (3)

Publication Number Publication Date
JP2011109108A JP2011109108A (ja) 2011-06-02
JP2011109108A5 JP2011109108A5 (enExample) 2014-01-16
JP5731171B2 true JP5731171B2 (ja) 2015-06-10

Family

ID=43902287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010259876A Expired - Fee Related JP5731171B2 (ja) 2009-11-20 2010-11-22 薄膜トランジスタ組成物およびこれに関する方法

Country Status (5)

Country Link
US (1) US8319299B2 (enExample)
JP (1) JP5731171B2 (enExample)
KR (1) KR20110056241A (enExample)
CN (1) CN102074480B (enExample)
DE (1) DE102010051851A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101125567B1 (ko) * 2009-12-24 2012-03-22 삼성모바일디스플레이주식회사 고분자 기판 및 그 제조 방법과 상기 고분자 기판을 포함하는 표시 장치 및 그 제조 방법
KR101728486B1 (ko) * 2010-03-31 2017-04-20 삼성디스플레이 주식회사 박막 트랜지스터, 그 제조 방법 및 이를 포함하는 플렉시블 디스플레이 장치
CN103354243B (zh) 2013-06-28 2016-01-06 京东方科技集团股份有限公司 一种薄膜晶体管、其制备方法及相关装置
CN106893121B (zh) * 2015-12-17 2020-07-03 深圳瑞华泰薄膜科技股份有限公司 一种高尺寸稳定型聚酰亚胺薄膜及其制备方法
US10424670B2 (en) * 2016-12-30 2019-09-24 Intel Corporation Display panel with reduced power consumption
CN119212488A (zh) * 2020-03-31 2024-12-27 华为技术有限公司 一种显示组件、显示装置和指纹识别方法
CN116067241B (zh) * 2023-03-02 2023-08-29 中国工程物理研究院激光聚变研究中心 一种纤维改性的三明治飞片结构及其制备方法

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS603430B2 (ja) * 1980-08-13 1985-01-28 石原産業株式会社 重合体組成物用二酸化チタン顔料
JPS63312328A (ja) 1987-06-15 1988-12-20 Tokai Carbon Co Ltd ＳｉＣウイスカ−強化ポリイミド樹脂の製造方法
US5837767A (en) 1994-10-31 1998-11-17 Ntn Corporation Stripping fingers
US6017584A (en) 1995-07-20 2000-01-25 E Ink Corporation Multi-color electrophoretic displays and materials for making the same
US6120839A (en) 1995-07-20 2000-09-19 E Ink Corporation Electro-osmotic displays and materials for making the same
US6118426A (en) 1995-07-20 2000-09-12 E Ink Corporation Transducers and indicators having printed displays
US6120588A (en) 1996-07-19 2000-09-19 E Ink Corporation Electronically addressable microencapsulated ink and display thereof
US6124851A (en) 1995-07-20 2000-09-26 E Ink Corporation Electronic book with multiple page displays
JP3679224B2 (ja) 1996-05-10 2005-08-03 Ｎｔｎ株式会社 分離爪
US5930026A (en) 1996-10-25 1999-07-27 Massachusetts Institute Of Technology Nonemissive displays and piezoelectric power supplies therefor
US5961804A (en) 1997-03-18 1999-10-05 Massachusetts Institute Of Technology Microencapsulated electrophoretic display
US6067185A (en) 1997-08-28 2000-05-23 E Ink Corporation Process for creating an encapsulated electrophoretic display
CN1085707C (zh) 1997-10-23 2002-05-29 上海市合成树脂研究所 钛酸钾晶须增强聚酰亚胺复合材料的制备方法
AU3767899A (en) 1998-04-27 1999-11-16 E-Ink Corporation Shutter mode microencapsulated electrophoretic display
KR100519366B1 (ko) * 1999-04-03 2005-10-07 엘지.필립스 엘시디 주식회사 멀티도메인 액정표시소자
US6372538B1 (en) 2000-03-16 2002-04-16 University Of Delaware Fabrication of thin-film, flexible photovoltaic module
US6825068B2 (en) 2000-04-18 2004-11-30 E Ink Corporation Process for fabricating thin film transistors
US6710456B1 (en) * 2000-08-31 2004-03-23 Micron Technology, Inc. Composite interposer for BGA packages
WO2002102882A1 (en) 2001-06-15 2002-12-27 Kaneka Corporation Semiconductive polyimide film and process for production thereof
CN100580014C (zh) * 2001-06-15 2010-01-13 株式会社钟化 半导电性聚酰亚胺膜及其制造方法
US7271333B2 (en) 2001-07-20 2007-09-18 Ascent Solar Technologies, Inc. Apparatus and method of production of thin film photovoltaic modules
JP2003082231A (ja) 2001-09-17 2003-03-19 Kanegafuchi Chem Ind Co Ltd ポリイミド樹脂組成物、ポリイミドフィルムおよびポリイミド管状物
JP2003306553A (ja) * 2002-04-15 2003-10-31 Kanegafuchi Chem Ind Co Ltd ポリイミド成形体
JP2004035825A (ja) 2002-07-05 2004-02-05 Kanegafuchi Chem Ind Co Ltd 半導電性ポリイミドフィルムおよびその製造方法
JP4119700B2 (ja) 2002-07-26 2008-07-16 株式会社カネカ 樹脂添加用無機粉体分散液の製造方法、並びに、ポリイミドフィルムおよびポリアミドイミドフィルム
EP1529314A1 (de) 2002-08-16 2005-05-11 DaimlerChrysler AG KAROSSERIETEIL EINES FAHRZEUGES MIT EINER DüNNSCHICHTSOLARZELLE UND SEIN ERSTELLUNGSVERFAHREN
US20050072461A1 (en) 2003-05-27 2005-04-07 Frank Kuchinski Pinhole porosity free insulating films on flexible metallic substrates for thin film applications
JP2005105035A (ja) * 2003-09-29 2005-04-21 Asahi Schwebel Co Ltd プリプレグとその製造方法、及び積層板
US20050163968A1 (en) 2004-01-20 2005-07-28 Hanket Gregory M. Microfiller-reinforced polymer film
CN1320060C (zh) 2004-04-01 2007-06-06 中国科学院化学研究所 一种短纤维增强聚酰亚胺复合材料及制备方法和用途
JP2006028216A (ja) 2004-07-12 2006-02-02 Kaneka Corp ポリイミドフィルム及び該ポリイミドフィルムの製造方法
JP2007046045A (ja) * 2005-07-13 2007-02-22 Teijin Ltd ポリイミドフィルム基材
WO2007011742A2 (en) 2005-07-14 2007-01-25 Konarka Technologies, Inc. Cigs photovoltaic cells
TWI422913B (zh) * 2005-08-26 2014-01-11 Konica Minolta Opto Inc A thin film and a method for manufacturing the same, and a polarizing plate and a liquid crystal display device using the same
DE102006016307B4 (de) 2006-04-06 2011-07-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 Thermisch stabile Matrixmikropartikel und Mikrokapseln für die Kunststoffadditivierung und Verfahren zu ihrer Herstellung und ihre Verwendung
TWI342323B (en) * 2007-01-22 2011-05-21 Chang Chun Plastics Co Ltd Thermoset resin modified polyimide resin composition
US8476735B2 (en) * 2007-05-29 2013-07-02 Taiwan Semiconductor Manufacturing Company, Ltd. Programmable semiconductor interposer for electronic package and method of forming
JP5489410B2 (ja) * 2008-02-18 2014-05-14 富士フイルム株式会社 薄膜電界効果型トランジスタおよびそれを用いた表示装置
DE112009001229B4 (de) * 2008-05-20 2015-10-29 E.I. Du Pont De Nemours And Co. Thermisch und dimensional stabile Polyimidfolien und Verfahren, die sich darauf beziehen

Also Published As

Publication number Publication date
KR20110056241A (ko) 2011-05-26
CN102074480B (zh) 2015-04-01
JP2011109108A (ja) 2011-06-02
CN102074480A (zh) 2011-05-25
US20110121296A1 (en) 2011-05-26
US8319299B2 (en) 2012-11-27
DE102010051851A1 (de) 2011-05-26

Similar Documents

Publication Publication Date Title
US8653512B2 (en) Thin film transistor compositions, and methods relating thereto
JP5731171B2 (ja) 薄膜トランジスタ組成物およびこれに関する方法
JP5346078B2 (ja) 熱および寸法安定性ポリイミドフィルム、ならびに、これに関する方法
TWI491649B (zh) Polyimide film with smoothness
JP5822352B2 (ja) 透明可撓性積層体及び積層体ロール
US20090288699A1 (en) Laminate structures for high temperature photovoltaic applications, and methods relating thereto
TWI634567B (zh) 柔性基板的製造方法、柔性基板及包括其的電子裝置
JP2011109109A (ja) 半導体パッケージング用途において有用なインターポーザフィルム、およびこれに関連する方法
JP5485847B2 (ja) 熱および寸法安定性ポリイミドフィルム、電極および光吸収層を備えるアセンブリ、ならびに、これに関する方法
TWI897883B (zh) 聚醯亞胺膜、覆金屬積層板及電路基板
JP2020163841A (ja) 金属張積層板及び回路基板
CN107406674A (zh) 剥离层形成用组合物
JP2009056771A (ja) 金属樹脂複合体および回路基板、積層回路基板
JP2011109110A (ja) 光起電力構成物またはその前駆体、およびこれに関する方法
TW202121024A (zh) 可撓性液晶顯示裝置
JP2023052293A (ja) 金属張積層板及び回路基板
CN109572104B (zh) 覆金属层叠板及电路基板
HK1177216A (en) Thin film transistor compositions, and methods relating thereto
JP7376274B2 (ja) ポリイミド前駆体樹脂組成物

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131121

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20131121

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140908

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140916

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141208

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150310

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150409

R150 Certificate of patent or registration of utility model

Ref document number: 5731171

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees