CN102074480B - 薄膜晶体管组成及其相关方法 - Google Patents

薄膜晶体管组成及其相关方法 Download PDF

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Publication number
CN102074480B
CN102074480B CN201010500645.3A CN201010500645A CN102074480B CN 102074480 B CN102074480 B CN 102074480B CN 201010500645 A CN201010500645 A CN 201010500645A CN 102074480 B CN102074480 B CN 102074480B
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CN
China
Prior art keywords
substrate
filler
film
polyimide
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201010500645.3A
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English (en)
Chinese (zh)
Other versions
CN102074480A (zh
Inventor
B·C·奥曼
T·E·卡内
K·库塔基斯
S·布萨德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronics Inc
Original Assignee
EI Du Pont de Nemours and Co
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Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of CN102074480A publication Critical patent/CN102074480A/zh
Application granted granted Critical
Publication of CN102074480B publication Critical patent/CN102074480B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09D179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Polymers & Plastics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
CN201010500645.3A 2009-11-20 2010-09-25 薄膜晶体管组成及其相关方法 Expired - Fee Related CN102074480B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/622,789 US8319299B2 (en) 2009-11-20 2009-11-20 Thin film transistor compositions, and methods relating thereto
US12/622,789 2009-11-20

Publications (2)

Publication Number Publication Date
CN102074480A CN102074480A (zh) 2011-05-25
CN102074480B true CN102074480B (zh) 2015-04-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010500645.3A Expired - Fee Related CN102074480B (zh) 2009-11-20 2010-09-25 薄膜晶体管组成及其相关方法

Country Status (5)

Country Link
US (1) US8319299B2 (enExample)
JP (1) JP5731171B2 (enExample)
KR (1) KR20110056241A (enExample)
CN (1) CN102074480B (enExample)
DE (1) DE102010051851A1 (enExample)

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KR101125567B1 (ko) * 2009-12-24 2012-03-22 삼성모바일디스플레이주식회사 고분자 기판 및 그 제조 방법과 상기 고분자 기판을 포함하는 표시 장치 및 그 제조 방법
KR101728486B1 (ko) * 2010-03-31 2017-04-20 삼성디스플레이 주식회사 박막 트랜지스터, 그 제조 방법 및 이를 포함하는 플렉시블 디스플레이 장치
CN103354243B (zh) * 2013-06-28 2016-01-06 京东方科技集团股份有限公司 一种薄膜晶体管、其制备方法及相关装置
CN106893121B (zh) * 2015-12-17 2020-07-03 深圳瑞华泰薄膜科技股份有限公司 一种高尺寸稳定型聚酰亚胺薄膜及其制备方法
US10424670B2 (en) 2016-12-30 2019-09-24 Intel Corporation Display panel with reduced power consumption
CN119212488A (zh) * 2020-03-31 2024-12-27 华为技术有限公司 一种显示组件、显示装置和指纹识别方法
CN116067241B (zh) * 2023-03-02 2023-08-29 中国工程物理研究院激光聚变研究中心 一种纤维改性的三明治飞片结构及其制备方法

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Also Published As

Publication number Publication date
US20110121296A1 (en) 2011-05-26
JP2011109108A (ja) 2011-06-02
DE102010051851A1 (de) 2011-05-26
JP5731171B2 (ja) 2015-06-10
CN102074480A (zh) 2011-05-25
US8319299B2 (en) 2012-11-27
KR20110056241A (ko) 2011-05-26

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20221122

Address after: Delaware

Patentee after: DuPont Electronics

Address before: Delaware

Patentee before: E.I. Nemours DuPont

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150401