KR20110056241A - 박막 트랜지스터 구조체 및 그 관련 방법 - Google Patents

박막 트랜지스터 구조체 및 그 관련 방법 Download PDF

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Publication number
KR20110056241A
KR20110056241A KR1020100115336A KR20100115336A KR20110056241A KR 20110056241 A KR20110056241 A KR 20110056241A KR 1020100115336 A KR1020100115336 A KR 1020100115336A KR 20100115336 A KR20100115336 A KR 20100115336A KR 20110056241 A KR20110056241 A KR 20110056241A
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South Korea
Prior art keywords
film
layer
substrate
semiconductor material
polyimide
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Application number
KR1020100115336A
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English (en)
Korean (ko)
Inventor
브라이언 씨. 오만
토마스 에드워드 카니
코스탄티노스 쿠르타키스
살라 부사드
Original Assignee
이 아이 듀폰 디 네모아 앤드 캄파니
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Publication of KR20110056241A publication Critical patent/KR20110056241A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09D179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1020100115336A 2009-11-20 2010-11-19 박막 트랜지스터 구조체 및 그 관련 방법 Withdrawn KR20110056241A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/622,789 2009-11-20
US12/622,789 US8319299B2 (en) 2009-11-20 2009-11-20 Thin film transistor compositions, and methods relating thereto

Publications (1)

Publication Number Publication Date
KR20110056241A true KR20110056241A (ko) 2011-05-26

Family

ID=43902287

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100115336A Withdrawn KR20110056241A (ko) 2009-11-20 2010-11-19 박막 트랜지스터 구조체 및 그 관련 방법

Country Status (5)

Country Link
US (1) US8319299B2 (enExample)
JP (1) JP5731171B2 (enExample)
KR (1) KR20110056241A (enExample)
CN (1) CN102074480B (enExample)
DE (1) DE102010051851A1 (enExample)

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KR101728486B1 (ko) * 2010-03-31 2017-04-20 삼성디스플레이 주식회사 박막 트랜지스터, 그 제조 방법 및 이를 포함하는 플렉시블 디스플레이 장치
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CN106893121B (zh) * 2015-12-17 2020-07-03 深圳瑞华泰薄膜科技股份有限公司 一种高尺寸稳定型聚酰亚胺薄膜及其制备方法
US10424670B2 (en) * 2016-12-30 2019-09-24 Intel Corporation Display panel with reduced power consumption
CN119212488A (zh) * 2020-03-31 2024-12-27 华为技术有限公司 一种显示组件、显示装置和指纹识别方法
CN116067241B (zh) * 2023-03-02 2023-08-29 中国工程物理研究院激光聚变研究中心 一种纤维改性的三明治飞片结构及其制备方法

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Also Published As

Publication number Publication date
CN102074480B (zh) 2015-04-01
JP2011109108A (ja) 2011-06-02
CN102074480A (zh) 2011-05-25
US20110121296A1 (en) 2011-05-26
US8319299B2 (en) 2012-11-27
JP5731171B2 (ja) 2015-06-10
DE102010051851A1 (de) 2011-05-26

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PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20101119

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid