DE102008024230A1 - Schichtsystem für Solarzellen - Google Patents

Schichtsystem für Solarzellen Download PDF

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Publication number
DE102008024230A1
DE102008024230A1 DE102008024230A DE102008024230A DE102008024230A1 DE 102008024230 A1 DE102008024230 A1 DE 102008024230A1 DE 102008024230 A DE102008024230 A DE 102008024230A DE 102008024230 A DE102008024230 A DE 102008024230A DE 102008024230 A1 DE102008024230 A1 DE 102008024230A1
Authority
DE
Germany
Prior art keywords
layer
buffer layer
buffer
layer system
absorber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102008024230A
Other languages
German (de)
English (en)
Inventor
Jörg Dr. Palm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Glass France SAS
Original Assignee
Avancis GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avancis GmbH and Co KG filed Critical Avancis GmbH and Co KG
Priority to DE102008024230A priority Critical patent/DE102008024230A1/de
Priority to JP2011509890A priority patent/JP5635497B2/ja
Priority to US12/992,199 priority patent/US8962995B2/en
Priority to PCT/EP2009/003587 priority patent/WO2009141132A2/de
Priority to CN200980128365.XA priority patent/CN102099929B/zh
Priority to ES09749622T priority patent/ES2763159T3/es
Priority to EP09749622.8A priority patent/EP2281310B1/de
Priority to KR1020107028416A priority patent/KR101335810B1/ko
Publication of DE102008024230A1 publication Critical patent/DE102008024230A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
DE102008024230A 2008-05-19 2008-05-19 Schichtsystem für Solarzellen Withdrawn DE102008024230A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102008024230A DE102008024230A1 (de) 2008-05-19 2008-05-19 Schichtsystem für Solarzellen
JP2011509890A JP5635497B2 (ja) 2008-05-19 2009-05-19 太陽電池用層システム
US12/992,199 US8962995B2 (en) 2008-05-19 2009-05-19 Layer system for solar cells
PCT/EP2009/003587 WO2009141132A2 (de) 2008-05-19 2009-05-19 Schichtsystem für solarzellen
CN200980128365.XA CN102099929B (zh) 2008-05-19 2009-05-19 用于太阳能电池的层系统
ES09749622T ES2763159T3 (es) 2008-05-19 2009-05-19 Sistemas de capas para células solares
EP09749622.8A EP2281310B1 (de) 2008-05-19 2009-05-19 Schichtsystem für solarzellen
KR1020107028416A KR101335810B1 (ko) 2008-05-19 2009-05-19 태양 전지용 층 시스템

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008024230A DE102008024230A1 (de) 2008-05-19 2008-05-19 Schichtsystem für Solarzellen

Publications (1)

Publication Number Publication Date
DE102008024230A1 true DE102008024230A1 (de) 2009-11-26

Family

ID=41212500

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102008024230A Withdrawn DE102008024230A1 (de) 2008-05-19 2008-05-19 Schichtsystem für Solarzellen

Country Status (8)

Country Link
US (1) US8962995B2 (https=)
EP (1) EP2281310B1 (https=)
JP (1) JP5635497B2 (https=)
KR (1) KR101335810B1 (https=)
CN (1) CN102099929B (https=)
DE (1) DE102008024230A1 (https=)
ES (1) ES2763159T3 (https=)
WO (1) WO2009141132A2 (https=)

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WO2012014967A1 (ja) * 2010-07-28 2012-02-02 京セラ株式会社 光電変換装置とその製造方法および光電変換モジュ－ル
JP5709662B2 (ja) * 2011-06-16 2015-04-30 ソーラーフロンティア株式会社 Ｃｚｔｓ系薄膜太陽電池の製造方法
DE102012205978A1 (de) * 2012-04-12 2013-10-17 Robert Bosch Gmbh Photovoltaische Dünnschichtsolarmodule sowie Verfahren zur Herstellung solcher Dünnschichtsolarmodule
IN2014KN02866A (https=) 2012-06-20 2015-05-08 Bengbu Design & Res Inst For Glass Industry
EP2865012B1 (de) 2012-06-20 2023-01-18 Cnbm Research Institute For Advanced Glass Materials Group Co., Ltd. Schichtsystem für dünnschichtsolarzellen
KR101671090B1 (ko) 2012-06-20 2016-10-31 쌩-고벵 글래스 프랑스 박막 태양 전지를 위한 층 시스템
CN103078013B (zh) * 2013-01-29 2015-05-20 上海交通大学 钒酸铋/铁酸铋异质结薄膜太阳能电池的制备方法
JP2016510179A (ja) * 2013-03-15 2016-04-04 ナノコ テクノロジーズ リミテッド 粒子サイズ及びＳ：Ｓｅ比が調整されたＰＶデバイス
JP2014187215A (ja) * 2013-03-23 2014-10-02 Kyocera Corp 光電変換装置
KR102076544B1 (ko) * 2013-05-10 2020-02-12 에스케이이노베이션 주식회사 광흡수층의 제조방법
CN105474371B (zh) * 2013-06-27 2018-03-27 蚌埠玻璃工业设计研究院 用于具有钠铟硫化物缓冲层的薄层太阳能电池的层系统
EP2887405A1 (de) 2013-12-23 2015-06-24 Saint-Gobain Glass France Schichtsystem für Dünnschichtsolarzellen
US9306098B2 (en) * 2014-01-24 2016-04-05 Tsmc Solar Ltd. Method of making photovoltaic device comprising an absorber having a surface layer
US9240501B2 (en) * 2014-02-12 2016-01-19 Solar Frontier K.K. Compound-based thin film solar cell
EP2947702B1 (de) * 2014-05-21 2019-03-20 AZUR SPACE Solar Power GmbH Solarzellenstapel
ES2753449T3 (es) * 2014-12-22 2020-04-08 Bengbu Design & Res Inst Glass Ind Método para producir un sistema de capas para células solares de película delgada que tienen una capa tampón de sulfuro de indio y de sodio
US10121920B2 (en) * 2015-06-30 2018-11-06 International Business Machines Corporation Aluminum-doped zinc oxysulfide emitters for enhancing efficiency of chalcogenide solar cell
TWI620335B (zh) * 2015-08-07 2018-04-01 國立勤益科技大學 薄膜太陽能電池氧化鋅緩衝層結構及製程
CN105261666A (zh) * 2015-10-29 2016-01-20 厦门神科太阳能有限公司 薄膜太阳能电池
CN107690016B (zh) * 2017-10-23 2020-11-17 嘉兴巨腾信息科技有限公司 一种用于手机通讯的保护壳
CN108172665A (zh) * 2017-12-30 2018-06-15 凯盛光伏材料有限公司 一种cigs太阳能电池吸收层表面的处理方法
EP3627564A1 (de) 2018-09-22 2020-03-25 (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. Verfahren zur nachbehandlung einer absorberschicht
KR102710891B1 (ko) * 2022-04-12 2024-09-30 서울대학교산학협력단 탠덤 태양전지 및 이의 제조방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1126790A (ja) * 1997-07-04 1999-01-29 Yazaki Corp 半導体薄膜及びその製造方法並びに薄膜太陽電池
DE102006039331A1 (de) * 2006-08-15 2008-02-28 Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg Photovoltaik-Dünnschichtaufbau und Herstellungsverfahren

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US5141564A (en) * 1988-05-03 1992-08-25 The Boeing Company Mixed ternary heterojunction solar cell
US5286306A (en) * 1992-02-07 1994-02-15 Shalini Menezes Thin film photovoltaic cells from I-III-VI-VII compounds
JP3646940B2 (ja) * 1994-11-01 2005-05-11 松下電器産業株式会社 太陽電池
JPH1074968A (ja) * 1996-09-02 1998-03-17 Nippon Telegr & Teleph Corp <Ntt> 太陽電池およびその製造方法
JP3249407B2 (ja) * 1996-10-25 2002-01-21 昭和シェル石油株式会社 カルコパイライト系多元化合物半導体薄膜光吸収層からなる薄膜太陽電池
JP3249408B2 (ja) * 1996-10-25 2002-01-21 昭和シェル石油株式会社 薄膜太陽電池の薄膜光吸収層の製造方法及び製造装置
JP3527815B2 (ja) * 1996-11-08 2004-05-17 昭和シェル石油株式会社 薄膜太陽電池の透明導電膜の製造方法
JP2004214300A (ja) * 2002-12-27 2004-07-29 National Institute Of Advanced Industrial & Technology ヘテロ接合を有する太陽電池
WO2004090995A1 (ja) * 2003-04-09 2004-10-21 Matsushita Electric Industrial Co., Ltd. 太陽電池
BRPI0413567A (pt) * 2003-08-14 2006-10-17 Univ Johannesburg método para a preparação de pelìculas semicondutoras de liga quaternária ou superior de grupo ib-iiia-via
US7736940B2 (en) * 2004-03-15 2010-06-15 Solopower, Inc. Technique and apparatus for depositing layers of semiconductors for solar cell and module fabrication
CN100573812C (zh) * 2004-03-15 2009-12-23 索罗能源公司 用于太阳能电池制造的沉积半导体薄层的技术和装置
TW200633240A (en) * 2004-11-10 2006-09-16 Daystar Technologies Inc Method and apparatus for forming a thin-film solar cell using a continuous process
FR2886460B1 (fr) * 2005-05-25 2007-08-24 Electricite De France Sulfurisation et selenisation de couches de cigs electrodepose par recuit thermique
US8323735B2 (en) * 2006-10-13 2012-12-04 Solopower, Inc. Method and apparatus to form solar cell absorber layers with planar surface
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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1126790A (ja) * 1997-07-04 1999-01-29 Yazaki Corp 半導体薄膜及びその製造方法並びに薄膜太陽電池
DE102006039331A1 (de) * 2006-08-15 2008-02-28 Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg Photovoltaik-Dünnschichtaufbau und Herstellungsverfahren

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
RUDIGIER,E.,et.al.:Towards a Fast Process Control for Cu(In,Ga)(Se,S)2 Absorbers.The Surface Chalcogen Ratio Assessed By Raman Spectroscopy.In:19th European Photovoltaic Solar Energy Conference, 7-11 June 2004,ISBN 3-936338-15-9,S.1913-1916 $Fig.5$ *
VERMA,R.,et.al.:Physical Vapor Deposition of In2S3 Buffer on Cu(In,Ga)Se2 Absorber:Optimization of Processing Steps for Improved Cell Performance.In:22nd European Photovoltaic Solar Energy Conference, 3-7 September 2007,ISBN 3-936338-22-1,S.2315-2319 $S.2315 sow "amorphous" im letzten Abs. auf S.2317$ *
VERMA,R.,et.al.:Physical Vapor Deposition of In2S3 Buffer on Cu(In,Ga)Se2 Absorber:Optimization of Processing Steps for Improved Cell Performance.In:22nd European Photovoltaic Solar Energy Conference, 3-7 September 2007,ISBN 3-936338-22-1,S.2315-2319 S.2315 sow "amorphous" im letzten Abs. auf S.2317 RUDIGIER,E.,et.al.:Towards a Fast Process Control for Cu(In,Ga)(Se,S)2 Absorbers.The Surface Chalcogen Ratio Assessed By Raman Spectroscopy.In:19th European Photovoltaic Solar Energy Conference, 7-11 June 2004,ISBN 3-936338-15-9,S.1913-1916 Fig.5

Also Published As

Publication number Publication date
CN102099929A (zh) 2011-06-15
JP2011521463A (ja) 2011-07-21
EP2281310A2 (de) 2011-02-09
ES2763159T3 (es) 2020-05-27
US20110168258A1 (en) 2011-07-14
WO2009141132A3 (de) 2010-08-19
JP5635497B2 (ja) 2014-12-03
EP2281310B1 (de) 2019-09-25
KR101335810B1 (ko) 2013-12-03
US8962995B2 (en) 2015-02-24
KR20110020263A (ko) 2011-03-02
WO2009141132A4 (de) 2010-10-14
CN102099929B (zh) 2014-04-30
WO2009141132A2 (de) 2009-11-26

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8127 New person/name/address of the applicant

Owner name: SAINT-GOBAIN GLASS FRANCE S.A., COURBEVOIE, FR

8128 New person/name/address of the agent

Representative=s name: LENDVAI, T., DIPL.-CHEM. DR.RER.NAT., PAT.-ANW., 5

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20121201