CN108172665A - 一种cigs太阳能电池吸收层表面的处理方法 - Google Patents

一种cigs太阳能电池吸收层表面的处理方法 Download PDF

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CN108172665A
CN108172665A CN201711491229.XA CN201711491229A CN108172665A CN 108172665 A CN108172665 A CN 108172665A CN 201711491229 A CN201711491229 A CN 201711491229A CN 108172665 A CN108172665 A CN 108172665A
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cigs
layer
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solar battery
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彭寿
蒋卓睿
刘小雨
王策
张宽翔
王云飞
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Triumph Photovoltaic Material Co Ltd
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    • H01—ELECTRIC ELEMENTS
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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Abstract

本发明公开一种CIGS太阳能电池吸收层表面的处理方法，包括以下步骤：S1、在衬底表面由内至外依次制备金属背电极与CIGS吸收层；S2、将固体Ga2S3放入坩埚中加热，形成Ga2S3蒸气；S3、利用Ga2S3蒸气在CIGS吸收层表面镀制Ga2S3膜层；S4、在Ga2S3膜层表面蒸镀In2S3缓冲层；在吸收层表面镀制Ga2S3膜层，In2S3作为缓冲层，Ga2S3与In2S3的化学性质类似，不会导致缓冲层和吸收层禁带宽度失调的问题，而且S元素的掺入对提高吸收层禁带宽度十分有利，有效解决了吸收层表面Ga含量过低的问题。

Description

一种CIGS太阳能电池吸收层表面的处理方法
技术领域
本发明涉及薄膜太阳能电池技术领域，具体是一种CIGS太阳能电池吸收层表面的处理方法。
背景技术
CIGS太阳能电池由Cu、In、Ga、Se四种元素构成的黄铜矿结晶薄膜太阳能电池，具有光吸收能力强，发电稳定性好、转化效率高等优点。CIGS膜层作为吸收层是整个电池的关键，
目前，在制备CIGS膜层时，一般都需要进行RTP（快速热处理），Ga原子在快速热处理过程中不可避免的会向下迁移，从而更多的聚集在吸收层背面，导致膜层原子分布不均匀，因而提高吸收层表面Ga原子含量，在CIGS电池行业有着巨大的应用前景。
发明内容
本发明的目的在于提供一种CIGS太阳能电池吸收层表面的处理方法，该方法能够解决吸收层表面Ga含量低的问题，改善吸收层Ga的分布。
本发明解决其技术问题所采用的技术方案是：
一种CIGS太阳能电池吸收层表面的处理方法，包括以下步骤：
S1、在衬底表面由内至外依次制备金属背电极与CIGS吸收层；
S2、将固体Ga2S3放入坩埚中加热，形成Ga2S3蒸气；
S3、利用Ga2S3蒸气在CIGS吸收层表面镀制Ga2S3膜层；
S4、在Ga2S3膜层表面蒸镀In2S3缓冲层。
进一步的，步骤S2对固体Ga2S3的加热温度为1000～1200℃。
进一步的，所述Ga2S3膜层的厚度为30～70nm。
进一步的，所述In2S3缓冲层的厚度为50～90nm。
进一步的，步骤S1采用磁控溅射在衬底表面溅镀250～350nm厚度的 Mo膜层形成金属背电极；在金属背电极表面利用磁控溅射与蒸发镀膜工艺镀制1～3μm 厚度的CIGS膜，并进行500～700℃的RTP处理，得到CIGS吸收层。
进一步的，在步骤S4之前还包括对Ga2S3膜层的热处理步骤，在400～600℃条件下对Ga2S3膜层热处理2～8分钟。
本发明的有益效果是，在吸收层表面镀制Ga2S3膜层，In2S3作为缓冲层，Ga2S3与In2S3的化学性质类似，不会导致缓冲层和吸收层禁带宽度失调的问题，而且S元素的掺入对提高吸收层禁带宽度十分有利，在蒸镀In2S3缓冲层之前先对Ga2S3膜层热处理，能使Ga原子渗入吸收层，有效解决了吸收层表面Ga含量过低的问题。
附图说明
下面结合附图和实施例对本发明进一步说明：
图1是本发明的示意图。
具体实施方式
如图1所示，本发明提供一种CIGS太阳能电池吸收层表面的处理方法，包括以下步骤：
S1、在衬底1表面采用磁控溅射在衬底表面溅镀250～350nm厚度的 Mo膜层形成金属背电极2；在金属背电极2表面利用磁控溅射与蒸发镀膜工艺镀制1～3μm 厚度的CIGS膜，并进行500～700℃的RTP处理，得到CIGS吸收层3；
S2、将固体Ga2S3放入坩埚中加热，加热温度为1000～1200℃，形成Ga2S3蒸气；
S3、利用Ga2S3蒸气在CIGS吸收层3表面镀制30～70nm厚度的Ga2S3膜层4；
S4、在400～600℃条件下对Ga2S3膜层热处理2～8分钟；
S5、在Ga2S3膜层4表面蒸镀50～90nm 厚度的In2S3缓冲层5。
以上所述，仅是本发明的较佳实施例而已，并非对本发明作任何形式上的限制；任何熟悉本领域的技术人员，在不脱离本发明技术方案范围情况下，都可利用上述揭示的方法和技术内容对本发明技术方案做出许多可能的变动和修饰，或修改为等同变化的等效实施例。因此，凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所做的任何简单修改、等同替换、等效变化及修饰，均仍属于本发明技术方案保护的范围内。

Claims (6)

1.一种CIGS太阳能电池吸收层表面的处理方法，其特征在于，包括以下步骤：
S1、在衬底表面由内至外依次制备金属背电极与CIGS吸收层；
S2、将固体Ga2S3放入坩埚中加热，形成Ga2S3蒸气；
S3、利用Ga2S3蒸气在CIGS吸收层表面镀制Ga2S3膜层；
S4、在Ga2S3膜层表面蒸镀In2S3缓冲层。
2.根据权利要求1所述的一种CIGS太阳能电池吸收层表面的处理方法，其特征在于，步骤S2对固体Ga2S3的加热温度为1000～1200℃。
3.根据权利要求1或2所述的一种CIGS太阳能电池吸收层表面的处理方法，其特征在于，所述Ga2S3膜层的厚度为30～70nm。
4.根据权利要求1或2所述的一种CIGS太阳能电池吸收层表面的处理方法，其特征在于，所述In2S3缓冲层的厚度为50～90nm。
5.根据权利要求1所述的一种CIGS太阳能电池吸收层表面的处理方法，其特征在于，步骤S1采用磁控溅射在衬底表面溅镀250～350nm厚度的 Mo膜层形成金属背电极；在金属背电极表面利用磁控溅射与蒸发镀膜工艺镀制1～3μm 厚度的CIGS膜，并进行500～700℃的RTP处理，得到CIGS吸收层。
6.根据权利要求1所述的一种CIGS太阳能电池吸收层表面的处理方法，其特征在于，在步骤S4之前还包括对Ga2S3膜层的热处理步骤，在400～600℃条件下对Ga2S3膜层热处理2～8分钟。
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010141863A2 (en) * 2009-06-04 2010-12-09 The Regents Of The University Of California Solution-processed inorganic photo-voltaic devices and methods of production
CN102099929A (zh) * 2008-05-19 2011-06-15 法国圣戈班玻璃厂有限公司 用于太阳能电池的层系统
CN103077980A (zh) * 2013-01-25 2013-05-01 中国农业大学 一种铜铟镓硒薄膜太阳能电池及其制备方法
CN103258899A (zh) * 2012-02-17 2013-08-21 任丘市永基光电太阳能有限公司 一种柔性不锈钢衬底上cigs吸收层制备方法
CN103474514A (zh) * 2013-10-08 2013-12-25 江西冠能光电材料有限公司 铜铟镓硒太阳能电池的制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102099929A (zh) * 2008-05-19 2011-06-15 法国圣戈班玻璃厂有限公司 用于太阳能电池的层系统
WO2010141863A2 (en) * 2009-06-04 2010-12-09 The Regents Of The University Of California Solution-processed inorganic photo-voltaic devices and methods of production
CN103258899A (zh) * 2012-02-17 2013-08-21 任丘市永基光电太阳能有限公司 一种柔性不锈钢衬底上cigs吸收层制备方法
CN103077980A (zh) * 2013-01-25 2013-05-01 中国农业大学 一种铜铟镓硒薄膜太阳能电池及其制备方法
CN103474514A (zh) * 2013-10-08 2013-12-25 江西冠能光电材料有限公司 铜铟镓硒太阳能电池的制备方法

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Application publication date: 20180615