CN102099929B - 用于太阳能电池的层系统 - Google Patents

用于太阳能电池的层系统 Download PDF

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Publication number
CN102099929B
CN102099929B CN200980128365.XA CN200980128365A CN102099929B CN 102099929 B CN102099929 B CN 102099929B CN 200980128365 A CN200980128365 A CN 200980128365A CN 102099929 B CN102099929 B CN 102099929B
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layer
buffer layer
buffer
layer system
absorber
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Chinese (zh)
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CN102099929A (zh
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J·帕尔姆
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Avancis & Co KG GmbH
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Avancis & Co KG GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
CN200980128365.XA 2008-05-19 2009-05-19 用于太阳能电池的层系统 Active CN102099929B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008024230A DE102008024230A1 (de) 2008-05-19 2008-05-19 Schichtsystem für Solarzellen
DE102008024230.6 2008-05-19
PCT/EP2009/003587 WO2009141132A2 (de) 2008-05-19 2009-05-19 Schichtsystem für solarzellen

Publications (2)

Publication Number Publication Date
CN102099929A CN102099929A (zh) 2011-06-15
CN102099929B true CN102099929B (zh) 2014-04-30

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CN200980128365.XA Active CN102099929B (zh) 2008-05-19 2009-05-19 用于太阳能电池的层系统

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Country Link
US (1) US8962995B2 (https=)
EP (1) EP2281310B1 (https=)
JP (1) JP5635497B2 (https=)
KR (1) KR101335810B1 (https=)
CN (1) CN102099929B (https=)
DE (1) DE102008024230A1 (https=)
ES (1) ES2763159T3 (https=)
WO (1) WO2009141132A2 (https=)

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JP5709662B2 (ja) * 2011-06-16 2015-04-30 ソーラーフロンティア株式会社 Ｃｚｔｓ系薄膜太陽電池の製造方法
DE102012205978A1 (de) * 2012-04-12 2013-10-17 Robert Bosch Gmbh Photovoltaische Dünnschichtsolarmodule sowie Verfahren zur Herstellung solcher Dünnschichtsolarmodule
IN2014KN02866A (https=) 2012-06-20 2015-05-08 Bengbu Design & Res Inst For Glass Industry
EP2865012B1 (de) 2012-06-20 2023-01-18 Cnbm Research Institute For Advanced Glass Materials Group Co., Ltd. Schichtsystem für dünnschichtsolarzellen
KR101671090B1 (ko) 2012-06-20 2016-10-31 쌩-고벵 글래스 프랑스 박막 태양 전지를 위한 층 시스템
CN103078013B (zh) * 2013-01-29 2015-05-20 上海交通大学 钒酸铋/铁酸铋异质结薄膜太阳能电池的制备方法
JP2016510179A (ja) * 2013-03-15 2016-04-04 ナノコ テクノロジーズ リミテッド 粒子サイズ及びＳ：Ｓｅ比が調整されたＰＶデバイス
JP2014187215A (ja) * 2013-03-23 2014-10-02 Kyocera Corp 光電変換装置
KR102076544B1 (ko) * 2013-05-10 2020-02-12 에스케이이노베이션 주식회사 광흡수층의 제조방법
CN105474371B (zh) * 2013-06-27 2018-03-27 蚌埠玻璃工业设计研究院 用于具有钠铟硫化物缓冲层的薄层太阳能电池的层系统
EP2887405A1 (de) 2013-12-23 2015-06-24 Saint-Gobain Glass France Schichtsystem für Dünnschichtsolarzellen
US9306098B2 (en) * 2014-01-24 2016-04-05 Tsmc Solar Ltd. Method of making photovoltaic device comprising an absorber having a surface layer
US9240501B2 (en) * 2014-02-12 2016-01-19 Solar Frontier K.K. Compound-based thin film solar cell
EP2947702B1 (de) * 2014-05-21 2019-03-20 AZUR SPACE Solar Power GmbH Solarzellenstapel
ES2753449T3 (es) * 2014-12-22 2020-04-08 Bengbu Design & Res Inst Glass Ind Método para producir un sistema de capas para células solares de película delgada que tienen una capa tampón de sulfuro de indio y de sodio
US10121920B2 (en) * 2015-06-30 2018-11-06 International Business Machines Corporation Aluminum-doped zinc oxysulfide emitters for enhancing efficiency of chalcogenide solar cell
TWI620335B (zh) * 2015-08-07 2018-04-01 國立勤益科技大學 薄膜太陽能電池氧化鋅緩衝層結構及製程
CN105261666A (zh) * 2015-10-29 2016-01-20 厦门神科太阳能有限公司 薄膜太阳能电池
CN107690016B (zh) * 2017-10-23 2020-11-17 嘉兴巨腾信息科技有限公司 一种用于手机通讯的保护壳
CN108172665A (zh) * 2017-12-30 2018-06-15 凯盛光伏材料有限公司 一种cigs太阳能电池吸收层表面的处理方法
EP3627564A1 (de) 2018-09-22 2020-03-25 (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. Verfahren zur nachbehandlung einer absorberschicht
KR102710891B1 (ko) * 2022-04-12 2024-09-30 서울대학교산학협력단 탠덤 태양전지 및 이의 제조방법

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Also Published As

Publication number Publication date
CN102099929A (zh) 2011-06-15
JP2011521463A (ja) 2011-07-21
EP2281310A2 (de) 2011-02-09
ES2763159T3 (es) 2020-05-27
US20110168258A1 (en) 2011-07-14
WO2009141132A3 (de) 2010-08-19
JP5635497B2 (ja) 2014-12-03
EP2281310B1 (de) 2019-09-25
KR101335810B1 (ko) 2013-12-03
DE102008024230A1 (de) 2009-11-26
US8962995B2 (en) 2015-02-24
KR20110020263A (ko) 2011-03-02
WO2009141132A4 (de) 2010-10-14
WO2009141132A2 (de) 2009-11-26

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