CN102099929B - 用于太阳能电池的层系统 - Google Patents

用于太阳能电池的层系统 Download PDF

Info

Publication number
CN102099929B
CN102099929B CN200980128365.XA CN200980128365A CN102099929B CN 102099929 B CN102099929 B CN 102099929B CN 200980128365 A CN200980128365 A CN 200980128365A CN 102099929 B CN102099929 B CN 102099929B
Authority
CN
China
Prior art keywords
layer
buffer layer
buffer
layer system
absorber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN200980128365.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN102099929A (zh
Inventor
J·帕尔姆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avancis & Co KG GmbH
Original Assignee
Avancis & Co KG GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avancis & Co KG GmbH filed Critical Avancis & Co KG GmbH
Publication of CN102099929A publication Critical patent/CN102099929A/zh
Application granted granted Critical
Publication of CN102099929B publication Critical patent/CN102099929B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
CN200980128365.XA 2008-05-19 2009-05-19 用于太阳能电池的层系统 Active CN102099929B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008024230.6 2008-05-19
DE102008024230A DE102008024230A1 (de) 2008-05-19 2008-05-19 Schichtsystem für Solarzellen
PCT/EP2009/003587 WO2009141132A2 (de) 2008-05-19 2009-05-19 Schichtsystem für solarzellen

Publications (2)

Publication Number Publication Date
CN102099929A CN102099929A (zh) 2011-06-15
CN102099929B true CN102099929B (zh) 2014-04-30

Family

ID=41212500

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980128365.XA Active CN102099929B (zh) 2008-05-19 2009-05-19 用于太阳能电池的层系统

Country Status (8)

Country Link
US (1) US8962995B2 (https=)
EP (1) EP2281310B1 (https=)
JP (1) JP5635497B2 (https=)
KR (1) KR101335810B1 (https=)
CN (1) CN102099929B (https=)
DE (1) DE102008024230A1 (https=)
ES (1) ES2763159T3 (https=)
WO (1) WO2009141132A2 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012014967A1 (ja) * 2010-07-28 2012-02-02 京セラ株式会社 光電変換装置とその製造方法および光電変換モジュ－ル
JP5709662B2 (ja) * 2011-06-16 2015-04-30 ソーラーフロンティア株式会社 Ｃｚｔｓ系薄膜太陽電池の製造方法
DE102012205978A1 (de) * 2012-04-12 2013-10-17 Robert Bosch Gmbh Photovoltaische Dünnschichtsolarmodule sowie Verfahren zur Herstellung solcher Dünnschichtsolarmodule
IN2014KN02865A (https=) 2012-06-20 2015-05-08 Bengbu Design & Res Inst For Glass Industry
CN105144401B (zh) 2012-06-20 2018-02-09 蚌埠玻璃工业设计研究院 具有NaxIn1SyClz缓冲层的薄层太阳能电池的层系统
ES2829970T3 (es) 2012-06-20 2021-06-02 Cnbm Bengbu Design & Res Institute For Glass Industry Co Ltd Sistema de capas para células solares de capa delgada
CN103078013B (zh) * 2013-01-29 2015-05-20 上海交通大学 钒酸铋/铁酸铋异质结薄膜太阳能电池的制备方法
US20140261651A1 (en) * 2013-03-15 2014-09-18 Nanoco Technologies, Ltd. PV Device with Graded Grain Size and S:Se Ratio
JP2014187215A (ja) * 2013-03-23 2014-10-02 Kyocera Corp 光電変換装置
KR102076544B1 (ko) * 2013-05-10 2020-02-12 에스케이이노베이션 주식회사 광흡수층의 제조방법
ES2909538T3 (es) 2013-06-27 2022-05-06 Cnbm Bengbu Design & Res Institute For Glass Industry Co Ltd Sistema de capas para células solares de capa delgada con capa tampón de sulfuro de sodio e indio
EP2887405A1 (de) 2013-12-23 2015-06-24 Saint-Gobain Glass France Schichtsystem für Dünnschichtsolarzellen
US9306098B2 (en) * 2014-01-24 2016-04-05 Tsmc Solar Ltd. Method of making photovoltaic device comprising an absorber having a surface layer
US9240501B2 (en) * 2014-02-12 2016-01-19 Solar Frontier K.K. Compound-based thin film solar cell
EP2947702B1 (de) * 2014-05-21 2019-03-20 AZUR SPACE Solar Power GmbH Solarzellenstapel
EP3238228B1 (en) * 2014-12-22 2019-07-31 Bengbu Design & Research Institute for Glass Industry Method for producing a layer system for thin-film solar cells having a sodium indium sulfide buffer layer
US10121920B2 (en) * 2015-06-30 2018-11-06 International Business Machines Corporation Aluminum-doped zinc oxysulfide emitters for enhancing efficiency of chalcogenide solar cell
TWI620335B (zh) * 2015-08-07 2018-04-01 國立勤益科技大學 薄膜太陽能電池氧化鋅緩衝層結構及製程
CN105261666A (zh) * 2015-10-29 2016-01-20 厦门神科太阳能有限公司 薄膜太阳能电池
CN107690016B (zh) * 2017-10-23 2020-11-17 嘉兴巨腾信息科技有限公司 一种用于手机通讯的保护壳
CN108172665A (zh) * 2017-12-30 2018-06-15 凯盛光伏材料有限公司 一种cigs太阳能电池吸收层表面的处理方法
EP3627564A1 (de) 2018-09-22 2020-03-25 (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. Verfahren zur nachbehandlung einer absorberschicht
KR102710891B1 (ko) * 2022-04-12 2024-09-30 서울대학교산학협력단 탠덤 태양전지 및 이의 제조방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006039331A1 (de) * 2006-08-15 2008-02-28 Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg Photovoltaik-Dünnschichtaufbau und Herstellungsverfahren

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5141564A (en) * 1988-05-03 1992-08-25 The Boeing Company Mixed ternary heterojunction solar cell
US5286306A (en) * 1992-02-07 1994-02-15 Shalini Menezes Thin film photovoltaic cells from I-III-VI-VII compounds
JP3646940B2 (ja) * 1994-11-01 2005-05-11 松下電器産業株式会社 太陽電池
JPH1074968A (ja) * 1996-09-02 1998-03-17 Nippon Telegr & Teleph Corp <Ntt> 太陽電池およびその製造方法
JP3249408B2 (ja) * 1996-10-25 2002-01-21 昭和シェル石油株式会社 薄膜太陽電池の薄膜光吸収層の製造方法及び製造装置
JP3249407B2 (ja) * 1996-10-25 2002-01-21 昭和シェル石油株式会社 カルコパイライト系多元化合物半導体薄膜光吸収層からなる薄膜太陽電池
JP3527815B2 (ja) * 1996-11-08 2004-05-17 昭和シェル石油株式会社 薄膜太陽電池の透明導電膜の製造方法
JPH1126790A (ja) * 1997-07-04 1999-01-29 Yazaki Corp 半導体薄膜及びその製造方法並びに薄膜太陽電池
JP2004214300A (ja) * 2002-12-27 2004-07-29 National Institute Of Advanced Industrial & Technology ヘテロ接合を有する太陽電池
WO2004090995A1 (ja) * 2003-04-09 2004-10-21 Matsushita Electric Industrial Co., Ltd. 太陽電池
EA010171B1 (ru) * 2003-08-14 2008-06-30 Юниверсити Оф Йоханнесбург Способ получения полупроводниковых плёнок из четырёх и более компонентных сплавов элементов групп ib - iiia - via
US7736940B2 (en) * 2004-03-15 2010-06-15 Solopower, Inc. Technique and apparatus for depositing layers of semiconductors for solar cell and module fabrication
CN101894881A (zh) * 2004-03-15 2010-11-24 索罗能源公司 用于太阳能电池制造的沉积半导体薄层的技术和装置
CN101443929A (zh) * 2004-11-10 2009-05-27 德斯塔尔科技公司 使用含碱层的过程和光电装置
FR2886460B1 (fr) * 2005-05-25 2007-08-24 Electricite De France Sulfurisation et selenisation de couches de cigs electrodepose par recuit thermique
US8323735B2 (en) * 2006-10-13 2012-12-04 Solopower, Inc. Method and apparatus to form solar cell absorber layers with planar surface
US8323408B2 (en) * 2007-12-10 2012-12-04 Solopower, Inc. Methods and apparatus to provide group VIA materials to reactors for group IBIIIAVIA film formation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006039331A1 (de) * 2006-08-15 2008-02-28 Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg Photovoltaik-Dünnschichtaufbau und Herstellungsverfahren

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Chemical bath deposition of indium sulphide thin films: preparation and characterization;C.D. Lokhande;《thin solid films》;19990226;第340卷(第1-2期);18-23页 *
Temperature dependence of the bandgap, refractive index and single-oscillator parameters of amorphous indium selenide thin films;A.F. Qasrawi;《optical materials》;20070623;第29卷(第12期);1751-1755，全文 *
Towards a fast process control for Cu(In,Ga)(Se,S)2 absorbers. The surface chalcogen ratio assessed by Raman spectroscopy;E.Rudigier etc.;《19th European Photovaltaic Solar Energy Conference》;20040611;1913-1916页，全文 *

Also Published As

Publication number Publication date
WO2009141132A4 (de) 2010-10-14
CN102099929A (zh) 2011-06-15
KR20110020263A (ko) 2011-03-02
EP2281310A2 (de) 2011-02-09
WO2009141132A3 (de) 2010-08-19
KR101335810B1 (ko) 2013-12-03
ES2763159T3 (es) 2020-05-27
JP2011521463A (ja) 2011-07-21
EP2281310B1 (de) 2019-09-25
US20110168258A1 (en) 2011-07-14
WO2009141132A2 (de) 2009-11-26
US8962995B2 (en) 2015-02-24
JP5635497B2 (ja) 2014-12-03
DE102008024230A1 (de) 2009-11-26

Similar Documents

Publication Publication Date Title
CN102099929B (zh) 用于太阳能电池的层系统
Guo et al. Improved stability and efficiency of CdSe/Sb2Se3 thin-film solar cells
Umehara et al. Cu2Sn1-x Ge x S3 (x= 0.17) Thin-Film Solar Cells with High Conversion Efficiency of 6.0%
Arepalli et al. Photovoltaic behavior of the room temperature grown RF-Sputtered SnS thin films
US20100319777A1 (en) Solar cell and method of fabricating the same
KR101094326B1 (ko) 태양전지용 Ｃｕ－Ｉｎ－Ｚｎ－Ｓｎ－（Ｓｅ，Ｓ）계 박막 및 이의 제조방법
Yadav et al. Effect of intrinsic ZnO thickness on the performance of SnS/CdS-based thin-film solar cells
CN104813482B (zh) 用于cigs光伏器件的钼基材
KR102594725B1 (ko) 흡수체층의 후처리 방법
Wang et al. Fabrication of high-efficiency Cu 2 (Zn, Cd) SnS 4 solar cells by a rubidium fluoride assisted co-evaporation/annealing method
Regmi et al. Impact of selenization temperature on the performance of sequentially evaporated CuInSe2 thin film solar cells
Temgoua et al. Comparative study of Cu2ZnSnSe4 solar cells growth on transparent conductive oxides and molybdenum substrates
Temgoua et al. Influence of the annealing atmosphere and precursor's thickness on the properties of CZTSSe based solar cells
Nakada et al. Improved efficiency of Cu (In, Ga) Se/sub 2/thin film solar cells with chemically deposited ZnS buffer layers by air-annealing-formation of homojunction by solid phase diffusion
Dubey et al. Influence of substrate temperature and sulfurization on sputtered Cu 2 SnGe (S, Se) 3 thin films for solar cell application
JP6147926B2 (ja) ナトリウムインジウム硫化物緩衝層を有する薄膜太陽電池のための層システム
Chen et al. Ga/(Ga+ In) grading effects on ultra-thin (UT) CIGS solar cell
EP3238228B1 (en) Method for producing a layer system for thin-film solar cells having a sodium indium sulfide buffer layer
Shim et al. Studies on the influence of etching solution on the properties of Cu2ZnSn (S, Se4) thin film solar cells
CN104521006B (zh) 薄层太阳能电池的层系统
Cantas Photovoltaic Performance Investigation of Superstrate Sb2Se3 Solar Cells with Non-toxic Zn (O, S) Buffer Layer via Magnetron Sputtering
Gundogan et al. The Effect of Ar Gas Flow Rate on Structure and Optical Properties of Magnetron Sputtered Sb 2 Se 3 Thin Films for Solar Cells
Tseng et al. Effects of Annealing on Characteristics of Cu2ZnSnSe4/CH3NH3PbI3/ZnS/IZO Nanostructures
Kobayashi et al. Impacts of surface sulfurization on high-efficiency CIGS thin film solar cells
JP2014236137A (ja) 光電素子

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant