DE102007004304A1 - Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips - Google Patents
Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips Download PDFInfo
- Publication number
- DE102007004304A1 DE102007004304A1 DE102007004304A DE102007004304A DE102007004304A1 DE 102007004304 A1 DE102007004304 A1 DE 102007004304A1 DE 102007004304 A DE102007004304 A DE 102007004304A DE 102007004304 A DE102007004304 A DE 102007004304A DE 102007004304 A1 DE102007004304 A1 DE 102007004304A1
- Authority
- DE
- Germany
- Prior art keywords
- thin
- emitting diode
- diode chip
- film light
- layer sequence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010409 thin film Substances 0.000 title claims abstract description 61
- 230000005855 radiation Effects 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 20
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- 238000007788 roughening Methods 0.000 claims description 14
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- 238000009826 distribution Methods 0.000 claims description 3
- 238000001311 chemical methods and process Methods 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 10
- 239000004038 photonic crystal Substances 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
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- -1 nitride compound Chemical class 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
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- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
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- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
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- 239000002019 doping agent Substances 0.000 description 1
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- 239000004615 ingredient Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- ODNHQUQWHMGWGT-UHFFFAOYSA-N iridium;oxotin Chemical compound [Ir].[Sn]=O ODNHQUQWHMGWGT-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/20—Making multilayered or multicoloured articles
- B29C43/203—Making multilayered articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
- B29L2011/00—Optical elements, e.g. lenses, prisms
- B29L2011/0016—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Led Devices (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007004304A DE102007004304A1 (de) | 2007-01-29 | 2007-01-29 | Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips |
| TW097101979A TWI396299B (zh) | 2007-01-29 | 2008-01-18 | 薄膜發光二極體晶片及製造薄膜發光二極體晶片之方法 |
| KR1020097017989A KR20090111861A (ko) | 2007-01-29 | 2008-01-22 | 박막 발광 다이오드칩 및 박막 발광 다이오드칩의 제조 방법 |
| CN2008800034763A CN101601143B (zh) | 2007-01-29 | 2008-01-22 | 薄膜发光二极管芯片和用于制造薄膜发光二极管芯片的方法 |
| EP08708081.8A EP2132791B1 (fr) | 2007-01-29 | 2008-01-22 | Puce à diodes luminescentes à couche mince et procédé de fabrication d'une puce à diodes luminescentes à couche mince |
| US12/525,066 US9142720B2 (en) | 2007-01-29 | 2008-01-22 | Thin-film light emitting diode chip and method for producing a thin-film light emitting diode chip |
| PCT/EP2008/050716 WO2008092774A1 (fr) | 2007-01-29 | 2008-01-22 | Puce à diodes luminescentes à couche mince et procédé de fabrication d'une puce à diodes luminescentes à couche mince |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007004304A DE102007004304A1 (de) | 2007-01-29 | 2007-01-29 | Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102007004304A1 true DE102007004304A1 (de) | 2008-07-31 |
Family
ID=39203298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102007004304A Withdrawn DE102007004304A1 (de) | 2007-01-29 | 2007-01-29 | Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9142720B2 (fr) |
| EP (1) | EP2132791B1 (fr) |
| KR (1) | KR20090111861A (fr) |
| CN (1) | CN101601143B (fr) |
| DE (1) | DE102007004304A1 (fr) |
| TW (1) | TWI396299B (fr) |
| WO (1) | WO2008092774A1 (fr) |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008092774A1 (fr) | 2007-01-29 | 2008-08-07 | Osram Opto Semiconductors Gmbh | Puce à diodes luminescentes à couche mince et procédé de fabrication d'une puce à diodes luminescentes à couche mince |
| WO2009076933A1 (fr) | 2007-12-14 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Dispositif émetteur de rayonnement |
| DE102008038748A1 (de) | 2008-08-12 | 2010-02-18 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbares, optoelektronisches Halbleiterbauteil |
| DE102008045653A1 (de) | 2008-09-03 | 2010-03-04 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
| DE102008048650A1 (de) | 2008-09-24 | 2010-04-01 | Osram Opto Semiconductors Gmbh | Strahlung emittierende Vorrichtung |
| DE102008048648A1 (de) | 2008-09-24 | 2010-04-08 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| DE102008047579A1 (de) | 2008-09-17 | 2010-04-15 | Osram Opto Semiconductors Gmbh | Leuchtmittel |
| DE102008051044A1 (de) | 2008-10-09 | 2010-04-15 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
| WO2010081445A1 (fr) | 2009-01-15 | 2010-07-22 | Osram Opto Semiconductors Gmbh | Procédé de fabrication d'un élément optoélectronique et élément optoélectronique |
| EP2270882A1 (fr) * | 2009-06-30 | 2011-01-05 | Koninklijke Philips Electronics N.V. | Circuit à diode électroluminescente pour lumière ambiante |
| DE102009032606A1 (de) | 2009-07-10 | 2011-01-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil und Flachlichtquelle |
| WO2011006719A1 (fr) | 2009-07-17 | 2011-01-20 | Osram Opto Semiconductors Gmbh | Composant semiconducteur optoélectronique et procédé de fabrication d'un composant semiconducteur optoélectronique anorganique |
| DE102009034370A1 (de) | 2009-07-23 | 2011-01-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil und Verfahren zur Herstellung eines optischen Elements für ein optoelektronisches Bauteil |
| EP2338181A2 (fr) * | 2008-10-16 | 2011-06-29 | LG Innotek Co., Ltd | Dispositif electroluminescent a semiconducteurs et son procede de fabrication |
| WO2011080058A1 (fr) | 2009-12-30 | 2011-07-07 | Osram Opto Semiconductors Gmbh | Dispositif guide d'ondes optiques émetteur de rayonnement pour l'éclairage, module comprenant un tel dispositif et procédé de fabrication d'un tel dispositif |
| US8058147B2 (en) | 2005-08-05 | 2011-11-15 | Osram Opto Semiconductors Gmbh | Method for producing semiconductor components and thin-film semiconductor component |
| WO2012076458A1 (fr) * | 2010-12-10 | 2012-06-14 | Osram Opto Semiconductors Gmbh | Procédé de fabrication d'un composant optoélectronique et composant |
| US8872330B2 (en) | 2006-08-04 | 2014-10-28 | Osram Opto Semiconductors Gmbh | Thin-film semiconductor component and component assembly |
| DE102013106593A1 (de) * | 2013-04-09 | 2014-10-30 | Unity Opto Technology Co., Ltd. | Einchip-Doppellicht-Leuchtelement |
| WO2014195444A1 (fr) * | 2013-06-07 | 2014-12-11 | Würth Elektronik GmbH & Co. KG | Procédé de fabrication d'un module optique |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007041896A1 (de) | 2007-09-04 | 2009-03-05 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements |
| JP2010062493A (ja) | 2008-09-08 | 2010-03-18 | Stanley Electric Co Ltd | 半導体発光素子および半導体発光素子の製造方法 |
| TWI527260B (zh) * | 2008-11-19 | 2016-03-21 | 廣鎵光電股份有限公司 | 發光元件結構及其半導體晶圓結構 |
| DE102009023351A1 (de) * | 2009-05-29 | 2010-12-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
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| JPH0992878A (ja) * | 1995-09-25 | 1997-04-04 | Shin Etsu Handotai Co Ltd | 半導体発光素子及びその製造方法 |
| WO1998014986A1 (fr) | 1996-10-01 | 1998-04-09 | Siemens Aktiengesellschaft | Procede de separation de deux couches de matiere et composants electroniques ainsi produits |
| EP0977277A1 (fr) * | 1998-07-28 | 2000-02-02 | Interuniversitair Microelektronica Centrum Vzw | Dispositifs émetteurs de rayonnement à haut rendement et méthode de fabrication |
| DE10020464A1 (de) * | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis |
| DE10040448A1 (de) | 2000-08-18 | 2002-03-07 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zu dessen Herstellung |
| DE10051465A1 (de) * | 2000-10-17 | 2002-05-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis |
| DE10245628A1 (de) * | 2002-09-30 | 2004-04-15 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung emittierender Halbleiterchip und Verfahren zu dessen Herstellung |
| DE10339985A1 (de) * | 2003-08-29 | 2005-03-31 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit einer transparenten Kontaktschicht und Verfahren zu dessen Herstellung |
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| US20060237735A1 (en) * | 2005-04-22 | 2006-10-26 | Jean-Yves Naulin | High-efficiency light extraction structures and methods for solid-state lighting |
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| WO2008092774A1 (fr) | 2007-01-29 | 2008-08-07 | Osram Opto Semiconductors Gmbh | Puce à diodes luminescentes à couche mince et procédé de fabrication d'une puce à diodes luminescentes à couche mince |
| WO2009076933A1 (fr) | 2007-12-14 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Dispositif émetteur de rayonnement |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2008092774A1 (fr) | 2008-08-07 |
| TW200847487A (en) | 2008-12-01 |
| TWI396299B (zh) | 2013-05-11 |
| KR20090111861A (ko) | 2009-10-27 |
| EP2132791B1 (fr) | 2016-07-20 |
| US9142720B2 (en) | 2015-09-22 |
| EP2132791A1 (fr) | 2009-12-16 |
| CN101601143B (zh) | 2013-12-25 |
| US20100072500A1 (en) | 2010-03-25 |
| CN101601143A (zh) | 2009-12-09 |
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| R005 | Application deemed withdrawn due to failure to request examination |
Effective date: 20140130 |