DE102006055218A1 - Kontinuierliches Verfahren zur Synthese von nanoskaligen metallhaltigen Nanopartikel und Nanopartikeldispersion - Google Patents

Kontinuierliches Verfahren zur Synthese von nanoskaligen metallhaltigen Nanopartikel und Nanopartikeldispersion Download PDF

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Publication number
DE102006055218A1
DE102006055218A1 DE102006055218A DE102006055218A DE102006055218A1 DE 102006055218 A1 DE102006055218 A1 DE 102006055218A1 DE 102006055218 A DE102006055218 A DE 102006055218A DE 102006055218 A DE102006055218 A DE 102006055218A DE 102006055218 A1 DE102006055218 A1 DE 102006055218A1
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Prior art keywords
temperature
nanoparticles
precursor
reaction
nucleation
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DE102006055218A
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German (de)
English (en)
Inventor
Frank Dr. Rauscher
Verena Dr. Haverkamp
Björn Dr. Henninger
Leslaw Prof. Dr. Mleczko
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Bayer AG
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Bayer Technology Services GmbH
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Publication date
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Priority to DE102006055218A priority Critical patent/DE102006055218A1/de
Priority to CN2007800502434A priority patent/CN101589181B/zh
Priority to JP2009537505A priority patent/JP5324459B2/ja
Priority to CA2669883A priority patent/CA2669883C/en
Priority to EP07819686.2A priority patent/EP2106464B1/de
Priority to KR1020097012813A priority patent/KR20090082288A/ko
Priority to US12/515,706 priority patent/US7833506B2/en
Priority to PCT/EP2007/009677 priority patent/WO2008061632A1/de
Priority to TW096143808A priority patent/TWI443236B/zh
Publication of DE102006055218A1 publication Critical patent/DE102006055218A1/de
Priority to IL198733A priority patent/IL198733A/en
Priority to JP2012251976A priority patent/JP2014004576A/ja
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/082—Other phosphides of boron, aluminium, gallium or indium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/815—Group III-V based compounds, e.g. AlaGabIncNxPyAsz
    • Y10S977/818—III-P based compounds, e.g. AlxGayIn2P
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/824—Group II-VI nonoxide compounds, e.g. CdxMnyTe

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Colloid Chemistry (AREA)
DE102006055218A 2006-11-21 2006-11-21 Kontinuierliches Verfahren zur Synthese von nanoskaligen metallhaltigen Nanopartikel und Nanopartikeldispersion Withdrawn DE102006055218A1 (de)

Priority Applications (11)

Application Number Priority Date Filing Date Title
DE102006055218A DE102006055218A1 (de) 2006-11-21 2006-11-21 Kontinuierliches Verfahren zur Synthese von nanoskaligen metallhaltigen Nanopartikel und Nanopartikeldispersion
KR1020097012813A KR20090082288A (ko) 2006-11-21 2007-11-08 나노사이즈 금속 함유 나노입자 및 나노입자 분산액의 합성 방법
JP2009537505A JP5324459B2 (ja) 2006-11-21 2007-11-08 ナノサイズ金属含有ナノ粒子およびナノ粒子分散体の合成方法
CA2669883A CA2669883C (en) 2006-11-21 2007-11-08 Process for the synthesis of nanosize metal-containing nanoparticles and nanoparticle dispersions
EP07819686.2A EP2106464B1 (de) 2006-11-21 2007-11-08 Verfahren zur synthese von nanoskaligen metallhaltigen nanopartikel und nanopartikeldispersionen
CN2007800502434A CN101589181B (zh) 2006-11-21 2007-11-08 用于合成含纳米级金属的纳米颗粒和纳米颗粒分散体的方法
US12/515,706 US7833506B2 (en) 2006-11-21 2007-11-08 Process for the synthesis of nanosize metal-containing nanoparticles and nanoparticle dispersions
PCT/EP2007/009677 WO2008061632A1 (de) 2006-11-21 2007-11-08 Verfahren zur synthese von nanoskaligen metallhaltigen nanopartikel und nanopartikeldispersionen
TW096143808A TWI443236B (zh) 2006-11-21 2007-11-20 奈米級之含金屬奈米粒子及奈米粒子分散物之合成製程
IL198733A IL198733A (en) 2006-11-21 2009-05-13 A process for the synthesis of tiny particles containing tiny metal particles and tiny particles scattering
JP2012251976A JP2014004576A (ja) 2006-11-21 2012-11-16 ナノサイズ金属含有ナノ粒子およびナノ粒子分散体の合成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102006055218A DE102006055218A1 (de) 2006-11-21 2006-11-21 Kontinuierliches Verfahren zur Synthese von nanoskaligen metallhaltigen Nanopartikel und Nanopartikeldispersion

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DE102006055218A1 true DE102006055218A1 (de) 2008-05-29

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DE102006055218A Withdrawn DE102006055218A1 (de) 2006-11-21 2006-11-21 Kontinuierliches Verfahren zur Synthese von nanoskaligen metallhaltigen Nanopartikel und Nanopartikeldispersion

Country Status (10)

Country Link
US (1) US7833506B2 (https=)
EP (1) EP2106464B1 (https=)
JP (2) JP5324459B2 (https=)
KR (1) KR20090082288A (https=)
CN (1) CN101589181B (https=)
CA (1) CA2669883C (https=)
DE (1) DE102006055218A1 (https=)
IL (1) IL198733A (https=)
TW (1) TWI443236B (https=)
WO (1) WO2008061632A1 (https=)

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WO2010076008A1 (en) * 2008-12-30 2010-07-08 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e. V. An autosynthesizer for the controlled synthesis of nano- and sub-nanostructures
WO2012035005A1 (en) 2010-09-14 2012-03-22 Bayer Technology Services Gmbh Multistage surface modification procedure of semiconducting nanoparticles for use in hybrid solar cells and printable electronics
WO2012163976A1 (en) 2011-06-03 2012-12-06 Bayer Intellectual Property Gmbh Continuous process for the synthesis of ternary or quaternary semiconducting nanoparticles based on ib, iiia, via elements of the periodic classification
EP4157510A1 (en) * 2020-05-29 2023-04-05 UCL Business Ltd Synthesis of nanoparticles

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GB2457314A (en) * 2008-02-11 2009-08-12 Ct Angewandte Nanotech Can Apparatus and method for the manufacture of nanoparticles
KR101078050B1 (ko) * 2008-10-27 2011-10-31 한국기계연구원 양자점 제조 장치 및 양자점 제조 방법
DE102009015470A1 (de) 2008-12-12 2010-06-17 Byk-Chemie Gmbh Verfahren zur Herstellung von Metallnanopartikeln und auf diese Weise erhaltene Metallnanopartikel und ihre Verwendung
US8834965B2 (en) * 2009-02-12 2014-09-16 Xerox Corporation Organoamine stabilized silver nanoparticles and process for producing same
JP5333069B2 (ja) * 2009-09-01 2013-11-06 株式会社村田製作所 化合物半導体微粒子の製造方法
US20110076839A1 (en) * 2009-09-29 2011-03-31 Xiaofan Ren Making films composed of semiconductor nanocrystals
JP5563329B2 (ja) * 2010-02-16 2014-07-30 株式会社新光化学工業所 金属ナノ粒子およびその製造方法
KR101698762B1 (ko) * 2010-04-30 2017-01-23 삼성에스디아이 주식회사 리튬 전이금속 인산염의 제조방법
US8801979B2 (en) 2010-06-10 2014-08-12 State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University Apparatus and method for continuous production of materials
WO2012025548A1 (en) 2010-08-27 2012-03-01 Solvay Sa Process for the preparation of alkenones
JP5818196B2 (ja) * 2010-09-01 2015-11-18 株式会社 ナノ・キューブ・ジャパン 酸化スズ超微粒子の製造方法
US8663522B2 (en) * 2011-02-17 2014-03-04 Massachusetts Institute Of Technology Fiber draw synthesis
WO2012162858A1 (zh) * 2011-06-03 2012-12-06 拜尔技术工程（上海）有限公司 一种稀土掺杂荧光纳米粒子及其溶液的制备方法和系统
WO2012168192A2 (en) 2011-06-07 2012-12-13 Bayer Intellectual Property Gmbh Synthesis of highly fluorescing semiconducting core-shell nanoparticles based on ib, iib, iiia, via elements of the periodic classification.
GB2494659A (en) 2011-09-14 2013-03-20 Sharp Kk Nitride nanoparticles with high quantum yield and narrow luminescence spectrum.
EP2599898A1 (en) 2011-12-01 2013-06-05 Bayer Intellectual Property GmbH Continuous synthesis of high quantum yield InP/ZnS nanocrystals
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US9751071B2 (en) 2013-12-27 2017-09-05 State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University Continuous microwave-assisted segmented flow reactor for high-quality nanocrystal synthesis
JP6493901B2 (ja) * 2014-05-22 2019-04-03 国立研究開発法人産業技術総合研究所 有機半導体微粒子分散液の製造方法
JP5888821B2 (ja) * 2014-06-09 2016-03-22 株式会社新光化学工業所 金属ナノ粒子およびその製造方法
US10640882B2 (en) * 2015-07-23 2020-05-05 Shoei Chemical Inc. Method for producing nanocrystals and nanocrystal production device
CN106564931B (zh) * 2015-09-22 2018-05-29 苏州星烁纳米科技有限公司 一种纳米晶体制备方法
JP2016000867A (ja) * 2015-10-05 2016-01-07 株式会社新光化学工業所 金属ナノ粒子およびその製造方法
KR102148689B1 (ko) * 2015-12-31 2020-08-28 다우 글로벌 테크놀로지스 엘엘씨 나노구조 물질의 연속 유동 합성
US10369538B2 (en) 2015-12-31 2019-08-06 Kuantag Nanoteknolojiler Gelistirme Ve Uretim A.S. Flow system and process for photoluminescent nanoparticle production
US10815424B2 (en) 2015-12-31 2020-10-27 Kuantag Nanoteknolojiler Gelistirme Ve Uretim A.S. One-step process for synthesis of core shell nanocrystals
CN108057898A (zh) * 2016-11-08 2018-05-22 高勇谦 一种高度可控金属纳米线的连续自动化合成方法
WO2018180456A1 (ja) * 2017-03-28 2018-10-04 富士フイルム株式会社 Ｉｉｉ－ｖ族半導体ナノ粒子の製造方法、ｉｉｉ－ｖ族半導体量子ドットの製造方法、及びフロー式反応システム
CN106952705A (zh) * 2017-03-30 2017-07-14 中国人民解放军装甲兵工程学院 一种再分散性优越的磁流变液及其湿式制备方法
JP6442715B2 (ja) * 2017-04-28 2018-12-26 エム・テクニック株式会社 微粒子の製造方法
KR102008875B1 (ko) * 2017-12-26 2019-08-08 주식회사 포스코 농도 구배 전구체의 제조 장치 및 그 재료 투입 스케줄링 방법
JP7196728B2 (ja) * 2019-03-28 2022-12-27 昭栄化学工業株式会社 粒子の製造方法及び粒子製造装置
WO2020219370A1 (en) * 2019-04-20 2020-10-29 Trustees Of Dartmouth College Method and apparatus for magnetic nanoparticles development with ultra-small size, uniformity and monodispersity
JP7643835B2 (ja) * 2020-03-30 2025-03-11 ノリタケ株式会社 金属ナノ粒子の製造方法
CN113000851B (zh) * 2021-01-28 2023-04-18 南开大学 一种利用微通道反应器制备粒径可控超顺磁性纳米铁的方法
JP2023061896A (ja) * 2021-10-20 2023-05-02 財團法人工業技術研究院 コアシェル型量子ドットの調製装置および調製方法
IT202200001577A1 (it) * 2022-01-31 2023-07-31 Consiglio Nazionale Ricerche Process for the production of nanocrystals of metal chalcohalides
CN114957732B (zh) * 2022-05-31 2025-08-12 浙江大学 一种基于微反应器系统的生物相容纳米团聚体颗粒制备方法
CN116425195B (zh) * 2023-04-14 2024-10-29 安徽精卓光显技术有限责任公司 一种化合物半导体纳米材料及其制备方法

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CA2669883A1 (en) 2008-05-29
JP2010510056A (ja) 2010-04-02
US7833506B2 (en) 2010-11-16
CN101589181B (zh) 2013-04-24
JP5324459B2 (ja) 2013-10-23
KR20090082288A (ko) 2009-07-29
CA2669883C (en) 2016-05-03
US20090295005A1 (en) 2009-12-03
TWI443236B (zh) 2014-07-01
CN101589181A (zh) 2009-11-25
IL198733A (en) 2013-10-31
TW200839042A (en) 2008-10-01
JP2014004576A (ja) 2014-01-16

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