DE102006031579A1 - Verfahren zur Herstellung eines optischen Bauelements und eines optischen Bauelementmoduls - Google Patents

Verfahren zur Herstellung eines optischen Bauelements und eines optischen Bauelementmoduls Download PDF

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Publication number
DE102006031579A1
DE102006031579A1 DE102006031579A DE102006031579A DE102006031579A1 DE 102006031579 A1 DE102006031579 A1 DE 102006031579A1 DE 102006031579 A DE102006031579 A DE 102006031579A DE 102006031579 A DE102006031579 A DE 102006031579A DE 102006031579 A1 DE102006031579 A1 DE 102006031579A1
Authority
DE
Germany
Prior art keywords
imaging device
transparent cover
semiconductor substrate
protective layer
attaching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102006031579A
Other languages
German (de)
English (en)
Inventor
Suk-chae Yongin Kang
Yong-Chai Suwon Kwon
Yong-hwan Suwon Kwon
Gu-sung Seongnam Kim
Sun-Wook Heo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE102006031579A1 publication Critical patent/DE102006031579A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE102006031579A 2005-07-11 2006-07-03 Verfahren zur Herstellung eines optischen Bauelements und eines optischen Bauelementmoduls Withdrawn DE102006031579A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050062125A KR100809682B1 (ko) 2005-07-11 2005-07-11 투명 커버가 부착되어 있는 광학 장치의 제조방법 및 이를이용한 광학 장치 모듈의 제조방법
KR10-2005-0062125 2005-07-11

Publications (1)

Publication Number Publication Date
DE102006031579A1 true DE102006031579A1 (de) 2007-03-15

Family

ID=37609701

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102006031579A Withdrawn DE102006031579A1 (de) 2005-07-11 2006-07-03 Verfahren zur Herstellung eines optischen Bauelements und eines optischen Bauelementmoduls

Country Status (5)

Country Link
US (1) US20070010041A1 (enExample)
JP (1) JP2007027713A (enExample)
KR (1) KR100809682B1 (enExample)
CN (1) CN1897239A (enExample)
DE (1) DE102006031579A1 (enExample)

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* Cited by examiner, † Cited by third party
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US7761167B2 (en) 2004-06-10 2010-07-20 Medtronic Urinary Solutions, Inc. Systems and methods for clinician control of stimulation systems
US7335870B1 (en) * 2006-10-06 2008-02-26 Advanced Chip Engineering Technology Inc. Method for image sensor protection
KR100881458B1 (ko) * 2007-02-23 2009-02-06 삼성전자주식회사 마이크로렌즈 보호패턴을 갖는 촬상소자, 카메라모듈, 및그 제조방법
KR20090061310A (ko) * 2007-12-11 2009-06-16 주식회사 동부하이텍 이미지 센서 및 그 제조방법
JP5175620B2 (ja) * 2008-05-29 2013-04-03 シャープ株式会社 電子素子ウェハモジュールおよびその製造方法、電子素子モジュール、電子情報機器
US8476099B2 (en) 2010-07-22 2013-07-02 International Business Machines Corporation Methods for improved adhesion of protective layers of imager microlens structures by forming an interfacial region
JP5722008B2 (ja) * 2010-11-24 2015-05-20 株式会社日立国際電気 半導体デバイスの製造方法、半導体デバイス及び基板処理装置
JP6791584B2 (ja) * 2017-02-01 2020-11-25 株式会社ディスコ 加工方法
US11049898B2 (en) 2017-04-01 2021-06-29 Ningbo Sunny Opotech Co., Ltd. Systems and methods for manufacturing semiconductor modules
JP7075415B2 (ja) 2017-04-12 2022-05-25 ▲寧▼波舜宇光▲電▼信息有限公司 撮像モジュールおよびそのモールド感光アセンブリ並びに製造方法および電子機器
DE102017210379A1 (de) * 2017-06-21 2018-12-27 Robert Bosch Gmbh Bildsensormodul
JP7019203B2 (ja) * 2018-09-21 2022-02-15 中芯集成電路（寧波）有限公司上海分公司 イメージセンサモジュール及びその製造方法
KR102333727B1 (ko) * 2018-09-21 2021-12-01 닝보 세미컨덕터 인터내셔널 코포레이션 (상하이 브랜치) 이미지 센서 모듈 및 이의 제조 방법
KR20200133072A (ko) 2019-05-16 2020-11-26 삼성전자주식회사 이미지 센서 패키지
CN111627948B (zh) * 2020-06-05 2023-04-28 中国电子科技集团公司第四十四研究所 一种具有片上滤光片的ccd结构

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59198754A (ja) * 1983-04-26 1984-11-10 Toshiba Corp カラ−用固体撮像デバイス
KR100357178B1 (ko) * 1999-05-14 2002-10-18 주식회사 하이닉스반도체 고체 촬상 소자 및 그의 제조 방법
US6483101B1 (en) * 1999-12-08 2002-11-19 Amkor Technology, Inc. Molded image sensor package having lens holder
US6862189B2 (en) * 2000-09-26 2005-03-01 Kabushiki Kaisha Toshiba Electronic component, circuit device, method for manufacturing the circuit device, and semiconductor device
US20040012698A1 (en) * 2001-03-05 2004-01-22 Yasuo Suda Image pickup model and image pickup device
JP3881888B2 (ja) * 2001-12-27 2007-02-14 セイコーエプソン株式会社 光デバイスの製造方法
JP2003273043A (ja) * 2002-03-19 2003-09-26 Iwate Toshiba Electronics Co Ltd 半導体装置の製造方法
JP2004296453A (ja) * 2003-02-06 2004-10-21 Sharp Corp 固体撮像装置、半導体ウエハ、光学装置用モジュール、固体撮像装置の製造方法及び光学装置用モジュールの製造方法
KR100494025B1 (ko) * 2003-02-27 2005-06-10 김영선 이미지 센서의 제조 방법 및 그 이미지 센서를 패캐지하는 방법
KR100644521B1 (ko) * 2004-07-29 2006-11-10 매그나칩 반도체 유한회사 마이크로렌즈의 겉보기 크기가 향상된 이미지센서 및 그제조 방법

Also Published As

Publication number Publication date
KR100809682B1 (ko) 2008-03-06
US20070010041A1 (en) 2007-01-11
KR20070007482A (ko) 2007-01-16
CN1897239A (zh) 2007-01-17
JP2007027713A (ja) 2007-02-01

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OP8 Request for examination as to paragraph 44 patent law
8139 Disposal/non-payment of the annual fee
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20110201