CN1622334B - 固态成像装置及其制造方法 - Google Patents
固态成像装置及其制造方法 Download PDFInfo
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- CN1622334B CN1622334B CN2004100955127A CN200410095512A CN1622334B CN 1622334 B CN1622334 B CN 1622334B CN 2004100955127 A CN2004100955127 A CN 2004100955127A CN 200410095512 A CN200410095512 A CN 200410095512A CN 1622334 B CN1622334 B CN 1622334B
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- solid state
- image pickup
- state image
- pickup device
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- 239000007787 solid Substances 0.000 title claims abstract description 105
- 238000000034 method Methods 0.000 title claims abstract description 79
- 238000003384 imaging method Methods 0.000 title abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 239000004065 semiconductor Substances 0.000 claims abstract description 82
- 238000004519 manufacturing process Methods 0.000 claims description 36
- 238000005192 partition Methods 0.000 claims description 31
- 230000004888 barrier function Effects 0.000 claims description 25
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 230000005260 alpha ray Effects 0.000 claims description 16
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 238000005520 cutting process Methods 0.000 claims description 10
- 238000000227 grinding Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 7
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 210000005069 ears Anatomy 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 239000006059 cover glass Substances 0.000 abstract description 16
- 235000012431 wafers Nutrition 0.000 description 87
- 230000008569 process Effects 0.000 description 52
- 239000011521 glass Substances 0.000 description 32
- 238000012545 processing Methods 0.000 description 10
- 239000011230 binding agent Substances 0.000 description 9
- 238000007639 printing Methods 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 8
- 238000005538 encapsulation Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 244000247747 Coptis groenlandica Species 0.000 description 5
- 235000002991 Coptis groenlandica Nutrition 0.000 description 5
- 238000004380 ashing Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000009434 installation Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 238000009489 vacuum treatment Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 241000209149 Zea Species 0.000 description 2
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 description 2
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 235000005822 corn Nutrition 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000011017 operating method Methods 0.000 description 2
- 239000003351 stiffener Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 208000034189 Sclerosis Diseases 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001444 catalytic combustion detection Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003394221 | 2003-11-25 | ||
JP2003394221A JP4542768B2 (ja) | 2003-11-25 | 2003-11-25 | 固体撮像装置及びその製造方法 |
JP2003-394221 | 2003-11-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1622334A CN1622334A (zh) | 2005-06-01 |
CN1622334B true CN1622334B (zh) | 2011-07-06 |
Family
ID=34463779
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004100955127A Expired - Fee Related CN1622334B (zh) | 2003-11-25 | 2004-11-25 | 固态成像装置及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (3) | US7259438B2 (zh) |
EP (1) | EP1536478A3 (zh) |
JP (1) | JP4542768B2 (zh) |
KR (1) | KR100684703B1 (zh) |
CN (1) | CN1622334B (zh) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4000507B2 (ja) | 2001-10-04 | 2007-10-31 | ソニー株式会社 | 固体撮像装置の製造方法 |
JP2006228837A (ja) * | 2005-02-15 | 2006-08-31 | Sharp Corp | 半導体装置及びその製造方法 |
JP4641820B2 (ja) | 2005-02-17 | 2011-03-02 | 三洋電機株式会社 | 半導体装置の製造方法 |
TW200644261A (en) * | 2005-06-06 | 2006-12-16 | Megica Corp | Chip-package structure and manufacturing process thereof |
US7288757B2 (en) | 2005-09-01 | 2007-10-30 | Micron Technology, Inc. | Microelectronic imaging devices and associated methods for attaching transmissive elements |
KR100738653B1 (ko) * | 2005-09-02 | 2007-07-11 | 한국과학기술원 | 이미지 센서 모듈용 웨이퍼 레벨 칩 사이즈 패키지 및 이의제조방법 |
US7417221B2 (en) * | 2005-09-08 | 2008-08-26 | Gentex Corporation | Automotive vehicle image sensor |
JP4764710B2 (ja) * | 2005-12-06 | 2011-09-07 | 株式会社ザイキューブ | 半導体装置とその製造方法 |
JP2007188909A (ja) * | 2005-12-14 | 2007-07-26 | Fujifilm Corp | 固体撮像装置及びその製造方法 |
JP2007180239A (ja) * | 2005-12-27 | 2007-07-12 | Sharp Corp | 半田付け実装構造とその製造方法および製造装置,電子機器,並びに配線基板 |
JP2007208045A (ja) * | 2006-02-02 | 2007-08-16 | Sony Corp | 撮像装置、カメラモジュール、電子機器および撮像装置の製造方法 |
US20070236591A1 (en) * | 2006-04-11 | 2007-10-11 | Tam Samuel W | Method for mounting protective covers over image capture devices and devices manufactured thereby |
JP2007294658A (ja) * | 2006-04-25 | 2007-11-08 | Fujikura Ltd | 半導体パッケージ |
CN101512765A (zh) * | 2006-09-15 | 2009-08-19 | 富士通微电子株式会社 | 半导体器件及其制造方法 |
US20080067330A1 (en) * | 2006-09-19 | 2008-03-20 | Denso Corporation | Color sensor for vehicle and method for manufacturing the same |
US8456560B2 (en) * | 2007-01-26 | 2013-06-04 | Digitaloptics Corporation | Wafer level camera module and method of manufacture |
EP1973166B1 (fr) * | 2007-03-21 | 2015-09-09 | EM Microelectronic-Marin SA | Circuit intégré photorécepteur, et composant optoélectronique comprenant le circuit intégré photorécepteur |
JP2010525412A (ja) | 2007-04-24 | 2010-07-22 | フレックストロニクス エーピー エルエルシー | 底部にキャビティを備えるウエハーレベル光学部品とフリップチップ組立を用いた小型フォームファクタモジュール |
US20080265356A1 (en) * | 2007-04-27 | 2008-10-30 | Jin-Chyuan Biar | Chip size image sensing chip package |
JP4890398B2 (ja) * | 2007-09-19 | 2012-03-07 | パナソニック株式会社 | 撮像装置 |
US20090121300A1 (en) * | 2007-11-14 | 2009-05-14 | Micron Technology, Inc. | Microelectronic imager packages and associated methods of packaging |
JP5392458B2 (ja) * | 2008-08-21 | 2014-01-22 | 株式会社ザイキューブ | 半導体イメージセンサ |
JP5510877B2 (ja) * | 2008-10-07 | 2014-06-04 | 株式会社リコー | センサモジュール及びセンシング装置 |
JP5197436B2 (ja) * | 2009-02-26 | 2013-05-15 | 株式会社東芝 | センサーチップ及びその製造方法。 |
US9419032B2 (en) * | 2009-08-14 | 2016-08-16 | Nanchang O-Film Optoelectronics Technology Ltd | Wafer level camera module with molded housing and method of manufacturing |
JP5721370B2 (ja) | 2010-08-27 | 2015-05-20 | キヤノン株式会社 | 光センサの製造方法、光センサ及びカメラ |
FR2968832A1 (fr) * | 2010-12-08 | 2012-06-15 | St Microelectronics Grenoble 2 | Procédé de fabrication de dispositifs semi-conducteurs et dispositifs semi-conducteurs |
JP5791461B2 (ja) * | 2011-10-21 | 2015-10-07 | 浜松ホトニクス株式会社 | 光検出装置 |
CN104284060B (zh) * | 2013-07-12 | 2019-07-02 | 鸿富锦精密工业(深圳)有限公司 | 相机模组 |
JPWO2017010063A1 (ja) * | 2015-07-10 | 2018-07-12 | 凸版印刷株式会社 | 配線基板及びその製造方法 |
JP2017143092A (ja) * | 2016-02-08 | 2017-08-17 | ソニー株式会社 | ガラスインタポーザモジュール、撮像装置、および電子機器 |
CN111684785B (zh) * | 2018-01-29 | 2021-06-04 | 富士胶片株式会社 | 摄像单元及摄像装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH085566Y2 (ja) * | 1989-07-12 | 1996-02-14 | オリンパス光学工業株式会社 | 固体撮像装置 |
JPH085566A (ja) | 1994-06-20 | 1996-01-12 | Matsushita Electric Ind Co Ltd | 光学部品の異物および欠陥の検査方法 |
JP2000195861A (ja) * | 1998-12-25 | 2000-07-14 | Texas Instr Japan Ltd | 半導体装置およびその製造方法 |
JP3589421B2 (ja) * | 1999-06-30 | 2004-11-17 | Hoya株式会社 | 半導体パッケージ用窓材ガラス及びその製造方法 |
JP3638229B2 (ja) * | 1999-07-02 | 2005-04-13 | ペンタックス株式会社 | カメラバック交換式一眼レフカメラ |
US6389687B1 (en) * | 1999-12-08 | 2002-05-21 | Amkor Technology, Inc. | Method of fabricating image sensor packages in an array |
JP3527166B2 (ja) * | 2000-03-15 | 2004-05-17 | シャープ株式会社 | 固体撮像装置及びその製造方法 |
US6384472B1 (en) * | 2000-03-24 | 2002-05-07 | Siliconware Precision Industries Co., Ltd | Leadless image sensor package structure and method for making the same |
JP2001351997A (ja) * | 2000-06-09 | 2001-12-21 | Canon Inc | 受光センサーの実装構造体およびその使用方法 |
JP2002368235A (ja) * | 2001-03-21 | 2002-12-20 | Canon Inc | 半導体装置及びその製造方法 |
JP3839271B2 (ja) * | 2001-05-01 | 2006-11-01 | 富士写真フイルム株式会社 | 固体撮像装置及びその製造方法 |
US6613597B2 (en) * | 2001-06-29 | 2003-09-02 | Xanoptix, Inc. | Optical chip packaging via through hole |
JP4000507B2 (ja) * | 2001-10-04 | 2007-10-31 | ソニー株式会社 | 固体撮像装置の製造方法 |
JP5105695B2 (ja) * | 2001-11-05 | 2012-12-26 | カミヤチョウ アイピー ホールディングス | 固体イメージセンサおよびその製造方法 |
JP4237966B2 (ja) * | 2002-03-08 | 2009-03-11 | 浜松ホトニクス株式会社 | 検出器 |
JP4443865B2 (ja) * | 2002-06-24 | 2010-03-31 | 富士フイルム株式会社 | 固体撮像装置およびその製造方法 |
-
2003
- 2003-11-25 JP JP2003394221A patent/JP4542768B2/ja not_active Expired - Fee Related
-
2004
- 2004-11-22 US US10/992,776 patent/US7259438B2/en not_active Expired - Fee Related
- 2004-11-24 EP EP04257300A patent/EP1536478A3/en not_active Withdrawn
- 2004-11-24 KR KR1020040096743A patent/KR100684703B1/ko not_active IP Right Cessation
- 2004-11-25 CN CN2004100955127A patent/CN1622334B/zh not_active Expired - Fee Related
-
2006
- 2006-02-07 US US11/348,308 patent/US7527990B2/en not_active Expired - Fee Related
-
2007
- 2007-04-20 US US11/785,839 patent/US7345349B2/en not_active Expired - Fee Related
Non-Patent Citations (2)
Title |
---|
JP特开2001-351997A 2001.12.21 |
JP特开平7-202152A 1995.08.04 |
Also Published As
Publication number | Publication date |
---|---|
CN1622334A (zh) | 2005-06-01 |
EP1536478A2 (en) | 2005-06-01 |
EP1536478A3 (en) | 2008-07-23 |
KR20050050562A (ko) | 2005-05-31 |
US7527990B2 (en) | 2009-05-05 |
US7345349B2 (en) | 2008-03-18 |
JP2005158948A (ja) | 2005-06-16 |
US20050110107A1 (en) | 2005-05-26 |
JP4542768B2 (ja) | 2010-09-15 |
KR100684703B1 (ko) | 2007-02-20 |
US20070187791A1 (en) | 2007-08-16 |
US20060128044A1 (en) | 2006-06-15 |
US7259438B2 (en) | 2007-08-21 |
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