CN1897239A - 制造具有透明盖的光学装置和光学装置模块的方法 - Google Patents

制造具有透明盖的光学装置和光学装置模块的方法 Download PDF

Info

Publication number
CN1897239A
CN1897239A CNA2006101030777A CN200610103077A CN1897239A CN 1897239 A CN1897239 A CN 1897239A CN A2006101030777 A CNA2006101030777 A CN A2006101030777A CN 200610103077 A CN200610103077 A CN 200610103077A CN 1897239 A CN1897239 A CN 1897239A
Authority
CN
China
Prior art keywords
protective layer
semiconductor substrate
transparency cover
bond pattern
image device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006101030777A
Other languages
English (en)
Chinese (zh)
Inventor
姜锡采
权容载
权容焕
金玖星
许舜旭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1897239A publication Critical patent/CN1897239A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CNA2006101030777A 2005-07-11 2006-07-11 制造具有透明盖的光学装置和光学装置模块的方法 Pending CN1897239A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR62125/05 2005-07-11
KR1020050062125A KR100809682B1 (ko) 2005-07-11 2005-07-11 투명 커버가 부착되어 있는 광학 장치의 제조방법 및 이를이용한 광학 장치 모듈의 제조방법

Publications (1)

Publication Number Publication Date
CN1897239A true CN1897239A (zh) 2007-01-17

Family

ID=37609701

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2006101030777A Pending CN1897239A (zh) 2005-07-11 2006-07-11 制造具有透明盖的光学装置和光学装置模块的方法

Country Status (5)

Country Link
US (1) US20070010041A1 (enExample)
JP (1) JP2007027713A (enExample)
KR (1) KR100809682B1 (enExample)
CN (1) CN1897239A (enExample)
DE (1) DE102006031579A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109104553A (zh) * 2017-06-21 2018-12-28 罗伯特·博世有限公司 图像传感器模块
CN111295873A (zh) * 2018-09-21 2020-06-16 中芯集成电路（宁波）有限公司上海分公司 一种图像传感器模组及其形成方法
CN111295759A (zh) * 2018-09-21 2020-06-16 中芯集成电路（宁波）有限公司上海分公司 图像传感器模组及其形成方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7761167B2 (en) 2004-06-10 2010-07-20 Medtronic Urinary Solutions, Inc. Systems and methods for clinician control of stimulation systems
US7335870B1 (en) * 2006-10-06 2008-02-26 Advanced Chip Engineering Technology Inc. Method for image sensor protection
KR100881458B1 (ko) * 2007-02-23 2009-02-06 삼성전자주식회사 마이크로렌즈 보호패턴을 갖는 촬상소자, 카메라모듈, 및그 제조방법
KR20090061310A (ko) * 2007-12-11 2009-06-16 주식회사 동부하이텍 이미지 센서 및 그 제조방법
JP5175620B2 (ja) * 2008-05-29 2013-04-03 シャープ株式会社 電子素子ウェハモジュールおよびその製造方法、電子素子モジュール、電子情報機器
US8476099B2 (en) 2010-07-22 2013-07-02 International Business Machines Corporation Methods for improved adhesion of protective layers of imager microlens structures by forming an interfacial region
JP5722008B2 (ja) * 2010-11-24 2015-05-20 株式会社日立国際電気 半導体デバイスの製造方法、半導体デバイス及び基板処理装置
JP6791584B2 (ja) * 2017-02-01 2020-11-25 株式会社ディスコ 加工方法
US11049898B2 (en) * 2017-04-01 2021-06-29 Ningbo Sunny Opotech Co., Ltd. Systems and methods for manufacturing semiconductor modules
CN108696681A (zh) 2017-04-12 2018-10-23 宁波舜宇光电信息有限公司 摄像模组及其模塑感光组件和制造方法以及电子设备
KR20200133072A (ko) 2019-05-16 2020-11-26 삼성전자주식회사 이미지 센서 패키지
CN111627948B (zh) * 2020-06-05 2023-04-28 中国电子科技集团公司第四十四研究所 一种具有片上滤光片的ccd结构

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59198754A (ja) * 1983-04-26 1984-11-10 Toshiba Corp カラ−用固体撮像デバイス
KR100357178B1 (ko) * 1999-05-14 2002-10-18 주식회사 하이닉스반도체 고체 촬상 소자 및 그의 제조 방법
US6483101B1 (en) * 1999-12-08 2002-11-19 Amkor Technology, Inc. Molded image sensor package having lens holder
US6862189B2 (en) * 2000-09-26 2005-03-01 Kabushiki Kaisha Toshiba Electronic component, circuit device, method for manufacturing the circuit device, and semiconductor device
US20040012698A1 (en) * 2001-03-05 2004-01-22 Yasuo Suda Image pickup model and image pickup device
JP3881888B2 (ja) * 2001-12-27 2007-02-14 セイコーエプソン株式会社 光デバイスの製造方法
JP2003273043A (ja) * 2002-03-19 2003-09-26 Iwate Toshiba Electronics Co Ltd 半導体装置の製造方法
JP2004296453A (ja) * 2003-02-06 2004-10-21 Sharp Corp 固体撮像装置、半導体ウエハ、光学装置用モジュール、固体撮像装置の製造方法及び光学装置用モジュールの製造方法
KR100494025B1 (ko) * 2003-02-27 2005-06-10 김영선 이미지 센서의 제조 방법 및 그 이미지 센서를 패캐지하는 방법
KR100644521B1 (ko) * 2004-07-29 2006-11-10 매그나칩 반도체 유한회사 마이크로렌즈의 겉보기 크기가 향상된 이미지센서 및 그제조 방법

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109104553A (zh) * 2017-06-21 2018-12-28 罗伯特·博世有限公司 图像传感器模块
CN109104553B (zh) * 2017-06-21 2021-10-12 罗伯特·博世有限公司 照相机模块
CN111295873A (zh) * 2018-09-21 2020-06-16 中芯集成电路（宁波）有限公司上海分公司 一种图像传感器模组及其形成方法
CN111295759A (zh) * 2018-09-21 2020-06-16 中芯集成电路（宁波）有限公司上海分公司 图像传感器模组及其形成方法
CN111295873B (zh) * 2018-09-21 2022-04-12 中芯集成电路（宁波）有限公司上海分公司 一种图像传感器模组的形成方法

Also Published As

Publication number Publication date
US20070010041A1 (en) 2007-01-11
KR20070007482A (ko) 2007-01-16
KR100809682B1 (ko) 2008-03-06
JP2007027713A (ja) 2007-02-01
DE102006031579A1 (de) 2007-03-15

Similar Documents

Publication Publication Date Title
CN1314125C (zh) 用于光学设备的模块及其制造方法
CN1324340C (zh) 光学装置用模块和光学装置用模块的制造方法
CN1266920C (zh) 摄像机模块
CN102577644B (zh) 带有模制外壳的晶圆级照相机模块以及制造方法
CN1279627C (zh) 半导体器件及其制造方法
CN1182584C (zh) 光学装置及其制造方法以及电子装置
JP5829025B2 (ja) ウェハレベルの光学素子の取り付け
CN1251484C (zh) 光装置的制造方法
US7643081B2 (en) Digital camera module with small sized image sensor chip package
CN1264037C (zh) 光学模块及其制造方法和电子仪器
CN1897239A (zh) 制造具有透明盖的光学装置和光学装置模块的方法
CN1645598A (zh) 半导体器件、光学器件模块以及半导体器件的制造方法
US20060234422A1 (en) Spacers for packaged microelectronic imagers and methods of making and using spacers for wafer-level packaging of imagers
CN1510496A (zh) 摄影模块及其制造方法
CN100581216C (zh) 超小型摄像模块及其制造方法
CN1622334A (zh) 固态成像装置及其制造方法
CN105762159B (zh) 具有感测表面空腔的图像传感器装置及相关方法
CN1722453A (zh) 成像和电子装置
CN1744302A (zh) 半导体装置、半导体模块以及半导体装置的制造方法
CN101632177A (zh) 用于成像器装置的封装方法
CN100352056C (zh) 光学器件及其制造方法
JP2006032886A (ja) 固体撮像装置及びその製造方法及びカメラモジュール
CN1783953A (zh) 摄像模块及摄像模块的制造方法
CN1430405A (zh) 光器件及其制造方法、光模块、电路板以及电子仪器
CN1722456A (zh) 图像传感器封装及其制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20070117