KR100494025B1 - 이미지 센서의 제조 방법 및 그 이미지 센서를 패캐지하는 방법 - Google Patents
이미지 센서의 제조 방법 및 그 이미지 센서를 패캐지하는 방법 Download PDFInfo
- Publication number
- KR100494025B1 KR100494025B1 KR10-2003-0012486A KR20030012486A KR100494025B1 KR 100494025 B1 KR100494025 B1 KR 100494025B1 KR 20030012486 A KR20030012486 A KR 20030012486A KR 100494025 B1 KR100494025 B1 KR 100494025B1
- Authority
- KR
- South Korea
- Prior art keywords
- image sensor
- delete delete
- transparent layer
- sensor chip
- bond pad
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000012780 transparent material Substances 0.000 claims abstract description 4
- 239000011248 coating agent Substances 0.000 claims abstract 2
- 238000000576 coating method Methods 0.000 claims abstract 2
- 239000007788 liquid Substances 0.000 claims abstract 2
- 239000011521 glass Substances 0.000 claims description 8
- 229910001111 Fine metal Inorganic materials 0.000 claims description 6
- 229920006336 epoxy molding compound Polymers 0.000 claims description 5
- 239000004033 plastic Substances 0.000 claims description 3
- 229920002379 silicone rubber Polymers 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 239000004593 Epoxy Substances 0.000 description 9
- 238000004806 packaging method and process Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229940125773 compound 10 Drugs 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- ZLVXBBHTMQJRSX-VMGNSXQWSA-N jdtic Chemical compound C1([C@]2(C)CCN(C[C@@H]2C)C[C@H](C(C)C)NC(=O)[C@@H]2NCC3=CC(O)=CC=C3C2)=CC=CC(O)=C1 ZLVXBBHTMQJRSX-VMGNSXQWSA-N 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
Abstract
Description
Claims (10)
- 표면에 다수의 마이크로 렌즈가 형성된 이미지 센서 칩의 전표면에 투명층을 형성하는 제 1 단계와,상기 이미지 센서 칩에 형성된 본드패드(Bond Pad) 영역의 상기 투명층을 제거하여, 상기 본드패드가 오픈되도록 하는 제 2 단계를 포함하되,상기 제 1 단계의 투명층은, 스핀코터(Spin Coater)장비를 사용하여 액체 상태의 투명물질을 코팅한 후, 이를 경화해서 형성된 것을 특징으로 하는 이미지 센서의 제조 방법.
- 제 1 항에 있어서,상기 투명물질은, 유리, 플라스틱, 실리콘 러버(Silicon Rubber), 수지 중에 어느 하나인 것을 특징으로 하는 이미지 센서의 제조 방법.
- 제 1 항에 있어서,상기 투명층은, 다층으로 형성된 것을 특징으로 하는 이미지 센서의 제조 방법.
- 표면에 다수의 마이크로 렌즈 및 투명층이 차례로 형성된 이미지 센서 칩을 패캐지용 리드프레임(Leadframe)의 다이패들(Die Paddle)에 부착하는 제 1 단계와,상기 이미지 센서 칩에 형성된 본드패드(Bond Pad)와 상기 리드프레임의 인너리드(Inner Lead)를 미세금속선으로 연결하는 제 2 단계와,상기 마이크로 렌즈 영역의 상기 투명층 표면을 제외한 전표면에 에폭시 몰딩 컴파운드(Epoxy Molding Compound)를 형성하는 제 3 단계를 포함하는 이미지 센서를 패캐지하는 방법.
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0012486A KR100494025B1 (ko) | 2003-02-27 | 2003-02-27 | 이미지 센서의 제조 방법 및 그 이미지 센서를 패캐지하는 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0012486A KR100494025B1 (ko) | 2003-02-27 | 2003-02-27 | 이미지 센서의 제조 방법 및 그 이미지 센서를 패캐지하는 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030028516A KR20030028516A (ko) | 2003-04-08 |
KR100494025B1 true KR100494025B1 (ko) | 2005-06-10 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2003-0012486A KR100494025B1 (ko) | 2003-02-27 | 2003-02-27 | 이미지 센서의 제조 방법 및 그 이미지 센서를 패캐지하는 방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100494025B1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190009979A (ko) * | 2017-07-20 | 2019-01-30 | 엘지이노텍 주식회사 | 카메라 모듈 패키지 |
KR20220099270A (ko) | 2021-01-06 | 2022-07-13 | 김영선 | 이미지 센서 / 반도체 패키지 구조 및 제조공정 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4838501B2 (ja) * | 2004-06-15 | 2011-12-14 | 富士通セミコンダクター株式会社 | 撮像装置及びその製造方法 |
KR100809682B1 (ko) * | 2005-07-11 | 2008-03-06 | 삼성전자주식회사 | 투명 커버가 부착되어 있는 광학 장치의 제조방법 및 이를이용한 광학 장치 모듈의 제조방법 |
KR100681697B1 (ko) * | 2005-12-02 | 2007-02-15 | 에스티에스반도체통신 주식회사 | 광에 의해 구동되는 반도체 패키지 |
KR100729007B1 (ko) * | 2006-01-19 | 2007-06-14 | 일렉비젼 인크. | 접촉 이미지 캡쳐 구조 |
KR100741932B1 (ko) * | 2006-07-31 | 2007-07-23 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조 방법 |
KR100899859B1 (ko) * | 2006-12-02 | 2009-05-29 | 크루셜텍 (주) | 광포인팅 장치의 이미지센서 패키지 |
CN104538416B (zh) * | 2015-02-03 | 2018-05-01 | 华天科技(昆山)电子有限公司 | 高可靠性全封闭cmos影像传感器结构及其制作方法 |
-
2003
- 2003-02-27 KR KR10-2003-0012486A patent/KR100494025B1/ko active IP Right Grant
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190009979A (ko) * | 2017-07-20 | 2019-01-30 | 엘지이노텍 주식회사 | 카메라 모듈 패키지 |
KR102334198B1 (ko) * | 2017-07-20 | 2021-12-02 | 엘지이노텍 주식회사 | 카메라 모듈 패키지 |
KR20220099270A (ko) | 2021-01-06 | 2022-07-13 | 김영선 | 이미지 센서 / 반도체 패키지 구조 및 제조공정 |
Also Published As
Publication number | Publication date |
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KR20030028516A (ko) | 2003-04-08 |
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