JP2007027713A - 透明カバーが付着されている光学装置の製造方法及びそれを利用した光学装置モジュールの製造方法 - Google Patents

透明カバーが付着されている光学装置の製造方法及びそれを利用した光学装置モジュールの製造方法 Download PDF

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Publication number
JP2007027713A
JP2007027713A JP2006185737A JP2006185737A JP2007027713A JP 2007027713 A JP2007027713 A JP 2007027713A JP 2006185737 A JP2006185737 A JP 2006185737A JP 2006185737 A JP2006185737 A JP 2006185737A JP 2007027713 A JP2007027713 A JP 2007027713A
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JP
Japan
Prior art keywords
manufacturing
optical device
transparent cover
image element
semiconductor substrate
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2006185737A
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English (en)
Japanese (ja)
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JP2007027713A5 (enExample
Inventor
Suk-Chae Kang
錫采 姜
Yong-Chai Kwon
容載 權
Yong-Hwan Kwon
容煥 權
Gu-Sung Kim
玖星 金
Sun-Wook Heo
舜旭 許
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2007027713A publication Critical patent/JP2007027713A/ja
Publication of JP2007027713A5 publication Critical patent/JP2007027713A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2006185737A 2005-07-11 2006-07-05 透明カバーが付着されている光学装置の製造方法及びそれを利用した光学装置モジュールの製造方法 Withdrawn JP2007027713A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050062125A KR100809682B1 (ko) 2005-07-11 2005-07-11 투명 커버가 부착되어 있는 광학 장치의 제조방법 및 이를이용한 광학 장치 모듈의 제조방법

Publications (2)

Publication Number Publication Date
JP2007027713A true JP2007027713A (ja) 2007-02-01
JP2007027713A5 JP2007027713A5 (enExample) 2009-08-20

Family

ID=37609701

Family Applications (1)

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JP2006185737A Withdrawn JP2007027713A (ja) 2005-07-11 2006-07-05 透明カバーが付着されている光学装置の製造方法及びそれを利用した光学装置モジュールの製造方法

Country Status (5)

Country Link
US (1) US20070010041A1 (enExample)
JP (1) JP2007027713A (enExample)
KR (1) KR100809682B1 (enExample)
CN (1) CN1897239A (enExample)
DE (1) DE102006031579A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008211209A (ja) * 2007-02-23 2008-09-11 Samsung Electronics Co Ltd マイクロレンズ保護パターンを有する撮像素子、カメラモジュール、及びその製造方法
JP2012114223A (ja) * 2010-11-24 2012-06-14 Hitachi Kokusai Electric Inc 半導体デバイスの製造方法、半導体デバイス及び基板処理装置
JP2021501984A (ja) * 2018-09-21 2021-01-21 中芯集成電路（寧波）有限公司上海分公司Ｎｉｎｇｂｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｃｏｒｐｏｒａｔｉｏｎ（Ｓｈａｎｇｈａｉ Ｂｒａｎｃｈ） イメージセンサモジュール及びその製造方法

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* Cited by examiner, † Cited by third party
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US7761167B2 (en) 2004-06-10 2010-07-20 Medtronic Urinary Solutions, Inc. Systems and methods for clinician control of stimulation systems
US7335870B1 (en) * 2006-10-06 2008-02-26 Advanced Chip Engineering Technology Inc. Method for image sensor protection
KR20090061310A (ko) * 2007-12-11 2009-06-16 주식회사 동부하이텍 이미지 센서 및 그 제조방법
JP5175620B2 (ja) * 2008-05-29 2013-04-03 シャープ株式会社 電子素子ウェハモジュールおよびその製造方法、電子素子モジュール、電子情報機器
US8476099B2 (en) 2010-07-22 2013-07-02 International Business Machines Corporation Methods for improved adhesion of protective layers of imager microlens structures by forming an interfacial region
JP6791584B2 (ja) * 2017-02-01 2020-11-25 株式会社ディスコ 加工方法
US11049898B2 (en) * 2017-04-01 2021-06-29 Ningbo Sunny Opotech Co., Ltd. Systems and methods for manufacturing semiconductor modules
CN108696681A (zh) 2017-04-12 2018-10-23 宁波舜宇光电信息有限公司 摄像模组及其模塑感光组件和制造方法以及电子设备
DE102017210379A1 (de) * 2017-06-21 2018-12-27 Robert Bosch Gmbh Bildsensormodul
CN111295873B (zh) * 2018-09-21 2022-04-12 中芯集成电路（宁波）有限公司上海分公司 一种图像传感器模组的形成方法
KR20200133072A (ko) 2019-05-16 2020-11-26 삼성전자주식회사 이미지 센서 패키지
CN111627948B (zh) * 2020-06-05 2023-04-28 中国电子科技集团公司第四十四研究所 一种具有片上滤光片的ccd结构

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59198754A (ja) * 1983-04-26 1984-11-10 Toshiba Corp カラ−用固体撮像デバイス
KR100357178B1 (ko) * 1999-05-14 2002-10-18 주식회사 하이닉스반도체 고체 촬상 소자 및 그의 제조 방법
US6483101B1 (en) * 1999-12-08 2002-11-19 Amkor Technology, Inc. Molded image sensor package having lens holder
US6862189B2 (en) * 2000-09-26 2005-03-01 Kabushiki Kaisha Toshiba Electronic component, circuit device, method for manufacturing the circuit device, and semiconductor device
US20040012698A1 (en) * 2001-03-05 2004-01-22 Yasuo Suda Image pickup model and image pickup device
JP3881888B2 (ja) * 2001-12-27 2007-02-14 セイコーエプソン株式会社 光デバイスの製造方法
JP2003273043A (ja) * 2002-03-19 2003-09-26 Iwate Toshiba Electronics Co Ltd 半導体装置の製造方法
JP2004296453A (ja) * 2003-02-06 2004-10-21 Sharp Corp 固体撮像装置、半導体ウエハ、光学装置用モジュール、固体撮像装置の製造方法及び光学装置用モジュールの製造方法
KR100494025B1 (ko) * 2003-02-27 2005-06-10 김영선 이미지 센서의 제조 방법 및 그 이미지 센서를 패캐지하는 방법
KR100644521B1 (ko) * 2004-07-29 2006-11-10 매그나칩 반도체 유한회사 마이크로렌즈의 겉보기 크기가 향상된 이미지센서 및 그제조 방법

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008211209A (ja) * 2007-02-23 2008-09-11 Samsung Electronics Co Ltd マイクロレンズ保護パターンを有する撮像素子、カメラモジュール、及びその製造方法
JP2012114223A (ja) * 2010-11-24 2012-06-14 Hitachi Kokusai Electric Inc 半導体デバイスの製造方法、半導体デバイス及び基板処理装置
JP2021501984A (ja) * 2018-09-21 2021-01-21 中芯集成電路（寧波）有限公司上海分公司Ｎｉｎｇｂｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｃｏｒｐｏｒａｔｉｏｎ（Ｓｈａｎｇｈａｉ Ｂｒａｎｃｈ） イメージセンサモジュール及びその製造方法
JP7072266B2 (ja) 2018-09-21 2022-05-20 中芯集成電路（寧波）有限公司上海分公司 イメージセンサモジュール及びその製造方法

Also Published As

Publication number Publication date
US20070010041A1 (en) 2007-01-11
CN1897239A (zh) 2007-01-17
KR20070007482A (ko) 2007-01-16
KR100809682B1 (ko) 2008-03-06
DE102006031579A1 (de) 2007-03-15

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