KR100809682B1 - 투명 커버가 부착되어 있는 광학 장치의 제조방법 및 이를이용한 광학 장치 모듈의 제조방법 - Google Patents

투명 커버가 부착되어 있는 광학 장치의 제조방법 및 이를이용한 광학 장치 모듈의 제조방법 Download PDF

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KR100809682B1
KR100809682B1 KR1020050062125A KR20050062125A KR100809682B1 KR 100809682 B1 KR100809682 B1 KR 100809682B1 KR 1020050062125 A KR1020050062125 A KR 1020050062125A KR 20050062125 A KR20050062125 A KR 20050062125A KR 100809682 B1 KR100809682 B1 KR 100809682B1
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South Korea
Prior art keywords
transparent cover
semiconductor substrate
bonding
adhesive pattern
forming
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Expired - Fee Related
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KR1020050062125A
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English (en)
Korean (ko)
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KR20070007482A (ko
Inventor
강석채
권용재
권용환
김구성
허순욱
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삼성전자주식회사
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Priority to KR1020050062125A priority Critical patent/KR100809682B1/ko
Priority to DE102006031579A priority patent/DE102006031579A1/de
Priority to JP2006185737A priority patent/JP2007027713A/ja
Priority to US11/482,774 priority patent/US20070010041A1/en
Priority to CNA2006101030777A priority patent/CN1897239A/zh
Publication of KR20070007482A publication Critical patent/KR20070007482A/ko
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Publication of KR100809682B1 publication Critical patent/KR100809682B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020050062125A 2005-07-11 2005-07-11 투명 커버가 부착되어 있는 광학 장치의 제조방법 및 이를이용한 광학 장치 모듈의 제조방법 Expired - Fee Related KR100809682B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020050062125A KR100809682B1 (ko) 2005-07-11 2005-07-11 투명 커버가 부착되어 있는 광학 장치의 제조방법 및 이를이용한 광학 장치 모듈의 제조방법
DE102006031579A DE102006031579A1 (de) 2005-07-11 2006-07-03 Verfahren zur Herstellung eines optischen Bauelements und eines optischen Bauelementmoduls
JP2006185737A JP2007027713A (ja) 2005-07-11 2006-07-05 透明カバーが付着されている光学装置の製造方法及びそれを利用した光学装置モジュールの製造方法
US11/482,774 US20070010041A1 (en) 2005-07-11 2006-07-10 Method of manufacturing optical device having transparent cover and method of manufacturing optical device module using the same
CNA2006101030777A CN1897239A (zh) 2005-07-11 2006-07-11 制造具有透明盖的光学装置和光学装置模块的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050062125A KR100809682B1 (ko) 2005-07-11 2005-07-11 투명 커버가 부착되어 있는 광학 장치의 제조방법 및 이를이용한 광학 장치 모듈의 제조방법

Publications (2)

Publication Number Publication Date
KR20070007482A KR20070007482A (ko) 2007-01-16
KR100809682B1 true KR100809682B1 (ko) 2008-03-06

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KR1020050062125A Expired - Fee Related KR100809682B1 (ko) 2005-07-11 2005-07-11 투명 커버가 부착되어 있는 광학 장치의 제조방법 및 이를이용한 광학 장치 모듈의 제조방법

Country Status (5)

Country Link
US (1) US20070010041A1 (enExample)
JP (1) JP2007027713A (enExample)
KR (1) KR100809682B1 (enExample)
CN (1) CN1897239A (enExample)
DE (1) DE102006031579A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7761167B2 (en) 2004-06-10 2010-07-20 Medtronic Urinary Solutions, Inc. Systems and methods for clinician control of stimulation systems
US7335870B1 (en) * 2006-10-06 2008-02-26 Advanced Chip Engineering Technology Inc. Method for image sensor protection
KR100881458B1 (ko) * 2007-02-23 2009-02-06 삼성전자주식회사 마이크로렌즈 보호패턴을 갖는 촬상소자, 카메라모듈, 및그 제조방법
KR20090061310A (ko) * 2007-12-11 2009-06-16 주식회사 동부하이텍 이미지 센서 및 그 제조방법
JP5175620B2 (ja) * 2008-05-29 2013-04-03 シャープ株式会社 電子素子ウェハモジュールおよびその製造方法、電子素子モジュール、電子情報機器
US8476099B2 (en) 2010-07-22 2013-07-02 International Business Machines Corporation Methods for improved adhesion of protective layers of imager microlens structures by forming an interfacial region
JP5722008B2 (ja) * 2010-11-24 2015-05-20 株式会社日立国際電気 半導体デバイスの製造方法、半導体デバイス及び基板処理装置
JP6791584B2 (ja) * 2017-02-01 2020-11-25 株式会社ディスコ 加工方法
US11049898B2 (en) 2017-04-01 2021-06-29 Ningbo Sunny Opotech Co., Ltd. Systems and methods for manufacturing semiconductor modules
JP7075415B2 (ja) 2017-04-12 2022-05-25 ▲寧▼波舜宇光▲電▼信息有限公司 撮像モジュールおよびそのモールド感光アセンブリ並びに製造方法および電子機器
DE102017210379A1 (de) * 2017-06-21 2018-12-27 Robert Bosch Gmbh Bildsensormodul
JP7019203B2 (ja) * 2018-09-21 2022-02-15 中芯集成電路（寧波）有限公司上海分公司 イメージセンサモジュール及びその製造方法
KR102333727B1 (ko) * 2018-09-21 2021-12-01 닝보 세미컨덕터 인터내셔널 코포레이션 (상하이 브랜치) 이미지 센서 모듈 및 이의 제조 방법
KR20200133072A (ko) 2019-05-16 2020-11-26 삼성전자주식회사 이미지 센서 패키지
CN111627948B (zh) * 2020-06-05 2023-04-28 中国电子科技集团公司第四十四研究所 一种具有片上滤光片的ccd结构

Citations (4)

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KR20030028516A (ko) * 2003-02-27 2003-04-08 김영선 진보된 이미지 센서 칩과 이를 사용한 패캐지 제조
JP2003197656A (ja) * 2001-12-27 2003-07-11 Seiko Epson Corp 光デバイス及びその製造方法、光モジュール、回路基板並びに電子機器
JP2003273043A (ja) * 2002-03-19 2003-09-26 Iwate Toshiba Electronics Co Ltd 半導体装置の製造方法
JP2004296453A (ja) * 2003-02-06 2004-10-21 Sharp Corp 固体撮像装置、半導体ウエハ、光学装置用モジュール、固体撮像装置の製造方法及び光学装置用モジュールの製造方法

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JPS59198754A (ja) * 1983-04-26 1984-11-10 Toshiba Corp カラ−用固体撮像デバイス
KR100357178B1 (ko) * 1999-05-14 2002-10-18 주식회사 하이닉스반도체 고체 촬상 소자 및 그의 제조 방법
US6483101B1 (en) * 1999-12-08 2002-11-19 Amkor Technology, Inc. Molded image sensor package having lens holder
US6862189B2 (en) * 2000-09-26 2005-03-01 Kabushiki Kaisha Toshiba Electronic component, circuit device, method for manufacturing the circuit device, and semiconductor device
US20040012698A1 (en) * 2001-03-05 2004-01-22 Yasuo Suda Image pickup model and image pickup device
KR100644521B1 (ko) * 2004-07-29 2006-11-10 매그나칩 반도체 유한회사 마이크로렌즈의 겉보기 크기가 향상된 이미지센서 및 그제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197656A (ja) * 2001-12-27 2003-07-11 Seiko Epson Corp 光デバイス及びその製造方法、光モジュール、回路基板並びに電子機器
JP2003273043A (ja) * 2002-03-19 2003-09-26 Iwate Toshiba Electronics Co Ltd 半導体装置の製造方法
JP2004296453A (ja) * 2003-02-06 2004-10-21 Sharp Corp 固体撮像装置、半導体ウエハ、光学装置用モジュール、固体撮像装置の製造方法及び光学装置用モジュールの製造方法
KR20030028516A (ko) * 2003-02-27 2003-04-08 김영선 진보된 이미지 센서 칩과 이를 사용한 패캐지 제조

Also Published As

Publication number Publication date
DE102006031579A1 (de) 2007-03-15
US20070010041A1 (en) 2007-01-11
KR20070007482A (ko) 2007-01-16
CN1897239A (zh) 2007-01-17
JP2007027713A (ja) 2007-02-01

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