DE102006008929A1 - Nitridhalbleiter-Bauelement und Verfahren zu seiner Herstellung - Google Patents
Nitridhalbleiter-Bauelement und Verfahren zu seiner Herstellung Download PDFInfo
- Publication number
- DE102006008929A1 DE102006008929A1 DE200610008929 DE102006008929A DE102006008929A1 DE 102006008929 A1 DE102006008929 A1 DE 102006008929A1 DE 200610008929 DE200610008929 DE 200610008929 DE 102006008929 A DE102006008929 A DE 102006008929A DE 102006008929 A1 DE102006008929 A1 DE 102006008929A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- nitride semiconductor
- nitride
- deposited
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 298
- 239000004065 semiconductor Substances 0.000 title claims abstract description 245
- 239000000758 substrate Substances 0.000 title claims abstract description 75
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 61
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 61
- 239000010703 silicon Substances 0.000 title claims abstract description 61
- 230000000873 masking effect Effects 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title claims description 47
- 238000010899 nucleation Methods 0.000 title abstract description 5
- 238000002360 preparation method Methods 0.000 title abstract description 3
- 230000006911 nucleation Effects 0.000 title abstract 3
- 230000012010 growth Effects 0.000 claims abstract description 109
- 238000000034 method Methods 0.000 claims abstract description 89
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 34
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 34
- 230000008021 deposition Effects 0.000 claims abstract description 21
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 20
- 238000004581 coalescence Methods 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 440
- 229910002601 GaN Inorganic materials 0.000 claims description 67
- 238000000151 deposition Methods 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000005259 measurement Methods 0.000 claims description 7
- 230000010355 oscillation Effects 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- -1 aluminum nitride nitrile Chemical class 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 claims description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims 1
- 239000012792 core layer Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 24
- 239000011229 interlayer Substances 0.000 description 13
- 238000001816 cooling Methods 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 12
- 238000004886 process control Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 229910002704 AlGaN Inorganic materials 0.000 description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 230000008901 benefit Effects 0.000 description 8
- 239000002243 precursor Substances 0.000 description 8
- 238000005336 cracking Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000003917 TEM image Methods 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000003698 anagen phase Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001152 differential interference contrast microscopy Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 210000001654 germ layer Anatomy 0.000 description 1
- 230000035784 germination Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
Priority Applications (23)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE200610008929 DE102006008929A1 (de) | 2006-02-23 | 2006-02-23 | Nitridhalbleiter-Bauelement und Verfahren zu seiner Herstellung |
| ES07726466T ES2352434T3 (es) | 2006-02-23 | 2007-02-22 | Componente semiconductor de nitruro y procedimiento para su fabricación. |
| SG201101341-4A SG170031A1 (en) | 2006-02-23 | 2007-02-22 | Nitride semiconductor component and process for its production |
| KR1020157026538A KR20150123293A (ko) | 2006-02-23 | 2007-02-22 | 질화물 반도체 컴포넌트 및 이의 제조를 위한 프로세스 |
| KR1020157026543A KR20150123294A (ko) | 2006-02-23 | 2007-02-22 | 질화물 반도체 컴포넌트 및 이의 제조를 위한 프로세스 |
| KR1020097026747A KR20100017895A (ko) | 2006-02-23 | 2007-02-22 | 질화물 반도체 컴포넌트 및 이의 제조를 위한 프로세스 |
| SG10201405004WA SG10201405004WA (en) | 2006-02-23 | 2007-02-22 | Nitride semiconductor component and process for its production |
| CN2010105147625A CN102064091B (zh) | 2006-02-23 | 2007-02-22 | 氮化物半导体部件及其制造工艺 |
| AT07726466T ATE483249T1 (de) | 2006-02-23 | 2007-02-22 | Nitridhalbleiter-bauelement und verfahren zu seiner herstellung |
| EP09165796.5A EP2112699B1 (de) | 2006-02-23 | 2007-02-22 | Nitridhalbleiter-Bauelement und Verfahren zu seiner Herstellung |
| EP07726466A EP1875523B1 (de) | 2006-02-23 | 2007-02-22 | Nitridhalbleiter-bauelement und verfahren zu seiner herstellung |
| KR1020087023046A KR101693849B1 (ko) | 2006-02-23 | 2007-02-22 | 질화물 반도체 컴포넌트 및 이의 제조를 위한 프로세스 |
| MYPI20083249A MY149325A (en) | 2006-02-23 | 2007-02-22 | Nitride semiconductor component and method for the production thereof |
| EP20000205.3A EP3731284A1 (de) | 2006-02-23 | 2007-02-22 | Nitridhalbleiterprodukt |
| EP20000202.0A EP3731283A1 (de) | 2006-02-23 | 2007-02-22 | Nitridhalbleiterprodukt |
| DE502007005172T DE502007005172D1 (de) | 2006-02-23 | 2007-02-22 | Nitridhalbleiter-bauelement und verfahren zu seiner herstellung |
| CN2007800146336A CN101427391B (zh) | 2006-02-23 | 2007-02-22 | 氮化物半导体部件及其制造工艺 |
| PCT/EP2007/051708 WO2007096405A1 (de) | 2006-02-23 | 2007-02-22 | Nitridhalbleiter-bauelement und verfahren zu seiner herstellung |
| JP2008555795A JP5393158B2 (ja) | 2006-02-23 | 2007-02-22 | 窒化物半導体素子ならびにその製法 |
| HK08107510.8A HK1116922A1 (en) | 2006-02-23 | 2008-07-08 | Nitride semiconductor component and method for the production thereof |
| JP2011180447A JP2011233936A (ja) | 2006-02-23 | 2011-08-22 | ニトリド半導体素子ならびにその製法 |
| JP2013141735A JP2013219391A (ja) | 2006-02-23 | 2013-07-05 | 窒化物半導体素子ならびにその製法 |
| JP2015097265A JP2015216378A (ja) | 2006-02-23 | 2015-05-12 | 窒化物半導体素子ならびにその製法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE200610008929 DE102006008929A1 (de) | 2006-02-23 | 2006-02-23 | Nitridhalbleiter-Bauelement und Verfahren zu seiner Herstellung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102006008929A1 true DE102006008929A1 (de) | 2007-08-30 |
Family
ID=38319865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE200610008929 Withdrawn DE102006008929A1 (de) | 2006-02-23 | 2006-02-23 | Nitridhalbleiter-Bauelement und Verfahren zu seiner Herstellung |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN101427391B (zh) |
| DE (1) | DE102006008929A1 (zh) |
| ES (1) | ES2352434T3 (zh) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009155897A1 (de) * | 2008-06-27 | 2009-12-30 | Osram Opto Semiconductors Gmbh | Verfahren zur herstellung eines optoelektronischen bauelementes und ein optoelektronisches bauelement |
| DE102009036843A1 (de) * | 2009-08-10 | 2011-02-17 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Leuchtdiode und Leuchtdiode |
| DE102009047881A1 (de) * | 2009-09-30 | 2011-04-21 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Leuchtdiode |
| WO2012025397A1 (de) * | 2010-08-26 | 2012-03-01 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements |
| DE102010040860A1 (de) | 2010-09-16 | 2012-03-22 | Otto-Von-Guericke-Universität Magdeburg | Schichtsystem aus einem siliziumbasierten Träger und einer direkt auf dem Träger aufgebrachten Heterostruktur |
| DE102011114671A1 (de) * | 2011-09-30 | 2013-04-04 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
| DE102011114670A1 (de) * | 2011-09-30 | 2013-04-04 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
| DE102011114665A1 (de) | 2011-09-30 | 2013-04-04 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Nitrid-Verbindungshalbleiter-Bauelements |
| DE102012204553A1 (de) * | 2012-03-21 | 2013-09-26 | Freiberger Compound Materials Gmbh | Verfahren zur Herstellung von III-N-Templaten und deren Weiterverarbeitung, und III-N-Template |
| WO2013139888A1 (de) | 2012-03-21 | 2013-09-26 | Freiberger Compound Materials Gmbh | Verfahren zur herstellung von iii-n-templaten und deren weiterverarbeitung, und iii-n-template |
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| CN106098794A (zh) * | 2016-06-30 | 2016-11-09 | 江苏能华微电子科技发展有限公司 | 二极管用外延片及其制备方法 |
| CN106098795A (zh) * | 2016-06-30 | 2016-11-09 | 江苏能华微电子科技发展有限公司 | 一种二极管用外延片及其制备方法 |
| CN106098747A (zh) * | 2016-06-30 | 2016-11-09 | 江苏能华微电子科技发展有限公司 | 一种肖特基二极管用外延片及其制备方法 |
| CN106098746A (zh) * | 2016-06-30 | 2016-11-09 | 江苏能华微电子科技发展有限公司 | 一种二极管用外延片及其制备方法 |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN101427391B (zh) | 2010-12-15 |
| CN101427391A (zh) | 2009-05-06 |
| ES2352434T3 (es) | 2011-02-18 |
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