HK1116922A1 - Nitride semiconductor component and method for the production thereof - Google Patents

Nitride semiconductor component and method for the production thereof

Info

Publication number
HK1116922A1
HK1116922A1 HK08107510.8A HK08107510A HK1116922A1 HK 1116922 A1 HK1116922 A1 HK 1116922A1 HK 08107510 A HK08107510 A HK 08107510A HK 1116922 A1 HK1116922 A1 HK 1116922A1
Authority
HK
Hong Kong
Prior art keywords
layer
nitride semiconductor
nitride
semiconductor component
production
Prior art date
Application number
HK08107510.8A
Inventor
Armin Dadgar
Alois Krost
Original Assignee
Azzurro Semiconductors Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE200610008929 external-priority patent/DE102006008929A1/en
Application filed by Azzurro Semiconductors Ag filed Critical Azzurro Semiconductors Ag
Publication of HK1116922A1 publication Critical patent/HK1116922A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

The process involves the preparation of a substrate with a silicon surface on which a nitride nucleation layer is deposited which contains aluminum. A masking layer is deposited on the nitride nucleation layer or on a nitride buffer layer if it is present. The nitride buffer layer is present in such a manner that separate crystallites first inter-grow in the deposition step of the first nitride semiconductor layer, above a coalescence layer thickness, and cover an average surface of at least 0.16 mu m 2> in a layer plane of the nitride semiconductor layer perpendicularly to the direction of growth. Independent claims are also included for the following: (1) a nitride semiconductor component which has gallium containing a nitride semiconductor layer; (2) a carrier disk with multiple nitride semiconductor components; and (3) a nitride semiconductor product with a substrate.
HK08107510.8A 2006-02-23 2008-07-08 Nitride semiconductor component and method for the production thereof HK1116922A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US77645706P 2006-02-23 2006-02-23
DE200610008929 DE102006008929A1 (en) 2006-02-23 2006-02-23 Layer structure production for nitride semiconductor component on silicon surface, involves preparation of substrate having silicon surface on which nitride nucleation layer is deposited with masking layer
PCT/EP2007/051708 WO2007096405A1 (en) 2006-02-23 2007-02-22 Nitride semiconductor component and method for the production thereof

Publications (1)

Publication Number Publication Date
HK1116922A1 true HK1116922A1 (en) 2009-01-02

Family

ID=38020245

Family Applications (1)

Application Number Title Priority Date Filing Date
HK08107510.8A HK1116922A1 (en) 2006-02-23 2008-07-08 Nitride semiconductor component and method for the production thereof

Country Status (10)

Country Link
EP (4) EP3731284A1 (en)
JP (4) JP5393158B2 (en)
KR (4) KR20150123293A (en)
CN (1) CN102064091B (en)
AT (1) ATE483249T1 (en)
DE (1) DE502007005172D1 (en)
HK (1) HK1116922A1 (en)
MY (1) MY149325A (en)
SG (2) SG10201405004WA (en)
WO (1) WO2007096405A1 (en)

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Also Published As

Publication number Publication date
CN102064091B (en) 2013-03-20
KR20150123293A (en) 2015-11-03
KR20150123294A (en) 2015-11-03
KR20080104014A (en) 2008-11-28
DE502007005172D1 (en) 2010-11-11
KR101693849B1 (en) 2017-01-06
ATE483249T1 (en) 2010-10-15
EP2112699A3 (en) 2009-12-30
EP1875523B1 (en) 2010-09-29
JP2013219391A (en) 2013-10-24
SG10201405004WA (en) 2014-10-30
KR20100017895A (en) 2010-02-16
WO2007096405A1 (en) 2007-08-30
SG170031A1 (en) 2011-04-29
EP2112699B1 (en) 2020-05-06
EP2112699A2 (en) 2009-10-28
MY149325A (en) 2013-08-30
EP1875523A1 (en) 2008-01-09
EP3731284A1 (en) 2020-10-28
CN102064091A (en) 2011-05-18
JP5393158B2 (en) 2014-01-22
JP2009527913A (en) 2009-07-30
EP3731283A1 (en) 2020-10-28
JP2015216378A (en) 2015-12-03
JP2011233936A (en) 2011-11-17

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