DE102004038573A1 - Epitaxially growing thick tear-free group III nitride semiconductor layers used in the production of modern opto-electronic and electronic components comprises using an aluminum-containing group III nitride intermediate layer - Google Patents

Epitaxially growing thick tear-free group III nitride semiconductor layers used in the production of modern opto-electronic and electronic components comprises using an aluminum-containing group III nitride intermediate layer Download PDF

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DE102004038573A1
DE102004038573A1 DE200410038573 DE102004038573A DE102004038573A1 DE 102004038573 A1 DE102004038573 A1 DE 102004038573A1 DE 200410038573 DE200410038573 DE 200410038573 DE 102004038573 A DE102004038573 A DE 102004038573A DE 102004038573 A1 DE102004038573 A1 DE 102004038573A1
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Armin Dr.rer.nat. Dadgar
Alois Prof. Dr.rer.nat.habil. Krost
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Azzurro Semiconductors AG
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
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Abstract

Epitaxially growing thick tear-free group III nitride semiconductor layers comprises depositing an aluminum-containing group III nitride intermediate layer which is grown at the same or higher temperature than the buffer material and has a thickness which leads to the aluminum-containing layer partially or completely relaxing.

Description

Das epitaktische Wachstum von Gruppe-III-Nitrid Schichten, wie sie für moderne optoelektronische und elektronische Bauelemente Verwendung finden, auf Silizium oder SiC führt je nach Methode und Wachstumstemperatur beim Abkühlen auf Raumtemperatur zur Ausbildung von Rissen aufgrund der stark verschiedenen thermischen Ausdehnungskoeffizienten dieser Materialien.The epitaxial growth of group III nitride layers, as they are modern optoelectronic and electronic components are used, on silicon or SiC leads depending on the method and growth temperature during cooling to room temperature Formation of cracks due to the very different thermal Expansion coefficients of these materials.

Eine Möglichkeit ist es, nur dünne Schichten oder bei einer niedrigen Temperatur abzuscheiden. Aufgrund der vorhandenen Gitterfehlanpassung kann damit jedoch nur sehr defektreiches Material erzielt werden. Erst dickere Schichten bei höheren Wachstumstemperaturen erfüllen Ansprüche, die für moderne optoelektronische und elektronische Bauelemente wichtig sind, wie eine mikroskopisch glatte Oberfläche und niedrige Versetzungsdichten.A possibility it is, only thin Layers or at a low temperature. by virtue of However, the existing lattice mismatch can thus only very rich in defects Material can be achieved. First thicker layers at higher growth temperatures fulfill Claims, the for modern ones Optoelectronic and electronic components are important, such as a microscopically smooth surface and low dislocation densities.

Dadgar et al. [Dadgar 2000] haben gezeigt, dass das Einbringen von Niedertemperatur AIN-Zwischenschichten das Wachstum von rissfreien, ca. 1.3 μm dicken GaN Schichten auf Si im Gegensatz zu der sonst üblichen maximal 1 μm Schichtdicke erlaubt. Hauptproblem dieses Verfahrens ist der zeitaufwendige Abkühl- und Aufheizprozess für diese Zwischenschichten. Es wurde auch gezeigt [Dadgar 2004], dass gleichdicke AIN Schichten, die bei hohen Temperaturen gewachsen werden keinen entsprechenden Effekt auf die Rissvermeidung haben. Die Ursache für die Rissvermeidung durch Niedertemperatur AIN Zwischenschichten wurde untersucht und es wurde festgestellt [Dadgar 2004], dass ein relaxiertes Aufwachsen von AIN bei Temperaturen unterhalb von ca. 1000°C Wachstumstemperatur auftritt, wahrscheinlich da AIN dann eine Tendenz zum polykristallinen Wachstum besitzt. Feltin et al. [Feltin 2001] haben gezeigt, dass sich mit AIN/GaN Übergitterstrukturen eine kompressive Verspannung erzeugen lässt, die sich erst nach dem Wachstum von 2.5 μm GaN verbraucht hat, d.h. erst oberhalb dieser Schichtdicke bilden sich Risse aus. Sie haben auch gezeigt, dass die tensile Verspannung des GaN mit zunehmender Schichtdicke wächst. Dieses Verfahren der AIN/GaN Übergitterstrukturen ist jedoch recht aufwendig und lässt sich nicht für beliebig dicke Schichtpakete anwenden, da es nur im unteren Teil der Pufferschicht funktioniert, wo es eine entsprechende Druckkomponente zur Kompensation der thermischen Zugverspannung erzeugt.Dadgar et al. [Dadgar 2000] have shown that the introduction of low temperature AIN interlayer growth of crack-free, about 1.3 microns thick GaN layers on Si in contrast to the usual maximum 1 micron layer thickness allowed. The main problem of this process is the time-consuming cooling and heating process for these intermediate layers. It was also shown [Dadgar 2004] that same-thickness AIN layers, which are grown at high temperatures are not appropriate Have an effect on the crack prevention. The cause of the crack prevention low temperature AIN interlayers was investigated and it was found [Dadgar 2004] that a relaxed growing up of AIN at temperatures below about 1000 ° C growth temperature occurs, probably since AIN then has a tendency to polycrystalline growth. Feltin et al. [Feltin 2001] have shown that with AIN / GaN superlattice structures create a compressive tension, which only after the Growth of 2.5 μm GaN has consumed, i. only form above this layer thickness cracks out. They also showed that the tensile strain of GaN grows with increasing layer thickness. This method of AIN / GaN superlattice structures is quite expensive and leaves not for yourself Apply as thick layer packages as it is only in the lower part of the Buffer layer works where there is a corresponding pressure component generated to compensate for the thermal tensile stress.

Das Verfahren nach Anspruch 1 bewirkt durch das Wachstum einer ausreichend dicken Al-haltigen Zwischenschicht, dass diese mindestens teilweise relaxiert. Die Relaxation findet bei diesem Material dabei meist durch Rissbildung in der Zwischenschicht statt. Das darauf aufgewachsene GaN wird dann kompressiv vorgespannt und diese kompressive Vorspannung kompensiert die tensile Verspannung beim Abkühlen. Durch die Rissbildung und das dadurch erfolgende teilweise facettierte Wachstum der Zwischenschicht können auch sehr effektiv Versetzungen an der Grenzfläche zu der darauf aufwachsenden Schicht abgebaut werden wie beim FACELO Wachstum [Honda 2001]. Wichtig dabei ist, dass dieses Verfahren keinen Abkühlprozess benötigt und durch die bessere Qualität der Hochtemperatur AIN Schicht auch zu einer höheren Qualität der GaN Schicht führt.The The method of claim 1 causes by the growth of a sufficient thick Al-containing interlayer that these at least partially relaxes. The relaxation usually occurs with this material by cracking in the interlayer instead. The grown up on it GaN is then preloaded compressively and this compressive bias compensates for the tensile stress during cooling. By the cracking and the resulting partially faceted growth of the intermediate layer can also very effective dislocations at the interface to the growing on it Layer are degraded as in FACELO growth [Honda 2001]. Important it is that this process does not require a cooling process and through the better quality The high temperature AIN layer also leads to a higher quality of GaN Layer leads.

Die beste Dicke bei Verwendung von reinem AIN beträgt dabei, wie in Anspruch 2 genannt, je nach Schichtsystem mehr als 15 bis maximal 200 nm. Wichtig ist dabei, die Schicht nur so dick zu machen, dass diese Zwischenschicht nicht selbst beim Abkühlen reißt, d.h. sie muss so dünn sein, dass die aufgebaute Zugverspannung unterhalb des kritischen Wertes für ein Reißen liegt. Dieses Reißen geschieht auch bei während des Wachstums vollständig relaxierten Schichten, wenn diese sehr dick sind und führt auch bei einer kompressiven Vorspannung der darauf abgeschiedenen Schicht wiederum zu einem Reißen des gesamten Schichtpakets.The Best thickness when using pure AlN is thereby, as in claim 2 called, depending on the layer system more than 15 to a maximum of 200 nm. Important is going to make the layer just so thick that this interlayer not even when cooling tears, i.e. she has to be so skinny be that the tensile stress built up below the critical Value for a tearing lies. This tearing happens also during during of growth completely relaxed layers, if they are very thick and leads too at a compressive bias of the deposited layer turn to a tearing of the entire layer package.

Durch das wiederholte Anwenden solch vorgespannter Zwischenschichten nach Anspruch 3 wird das Wachstum sehr dicker rissfreier GaN Schichten ermöglicht.By the repeated application of such prestressed interlayers Claim 3 will be the growth of very thick crack-free GaN layers allows.

Eine geringfügige Absenkung der Wachstumstemperatur um 10-20°C zum Wachsen der AIN Zwischenschicht ist zwar nicht sinnvoll, da damit tendenziell schlechtere Schichtqualitäten erzielt werden. Trotzdem ist solch eine geringe Absenkung der Wachstumstemperatur, die schnell und unproblematisch durchgeführt werden kann, auch denkbar und soll daher zum Gegenstand der Erfindung gehören.A minor Lowering the growth temperature by 10-20 ° C to grow the AIN intermediate layer does not make sense, as it tends to result in poorer coating qualities become. Nevertheless, such a small lowering of the growth temperature, which can be done quickly and easily, also conceivable and should therefore belong to the subject of the invention.

Zusätzlich zu den reinen Gruppe-III-Nitriden im System Gruppe-III-N ist das erfindungsgemäße Verfahren auch auf alle Materialien im System Metall-Stickstoff-Arsen-Phosphor, d.h. auch auf alle stickstoffreichen Halbleiter wie GaNAs, anwendbar.In addition to the pure group III nitrides in the group III-N system is the process according to the invention also to all materials in the system metal-nitrogen-arsenic-phosphorous, i. also applicable to all nitrogen-rich semiconductors such as GaNAs.

Im Folgenden wird mit Bezug auf die schematische Darstellung der Schichtenfolge in 1 eins von vielen möglichen Ausführungsbeispielen gezeigt.In the following, with reference to the schematic representation of the layer sequence in FIG 1 one of many possible embodiments shown.

In einem MOVPE Reaktor wird zuerst eine dünne AIN-Keimschicht 1b auf einem Si(111) Substrat 1 abgeschieden. Darauf folgt bei normaler Wachstumstemperatur eine ca. 500 nm dicke GaN-Pufferschicht 2, um eine glatte, geschlossene Oberfläche zu erhalten. Darauf werden wie in Anspruch 2 genannt ca. 30 nm AIN 2b bei einer Temperatur oberhalb von 1000°C und mindestens bei der GaN Wachstumstemperatur abgeschieden und wieder ca. 1 μm GaN – Schicht 3 – bei derselben oder einer niedrigeren Wachstumstemperatur gewachsen. Nach einer zweiten AIN Zwischenschicht 3b nach Anspruch 3 wird die eigentliche dicke GaN-Schicht 4 begonnen, die mit der Bauelementstruktur abschließt bzw. diese ethält. Beeinflussen lässt sich die Verspannung durch die Dicken und die Kompositionen der Schichten, wodurch sie sich so einstellen lässt, dass das Substrat/Schichtsystem am Ende, d.h. nach dem Abkühlen auf Raumtemperatur idealerweise eben und rissfrei ist.In a MOVPE reactor, first a thin AIN seed layer is formed 1b on a Si (111) substrate 1 deposited. Followed by normal wax Tween a 500 nm thick GaN buffer layer 2 to get a smooth, closed surface. On it are as mentioned in claim 2 about 30 nm AIN 2 B deposited at a temperature above 1000 ° C and at least at the GaN growth temperature and again about 1 micron GaN layer 3 Grown at the same or lower growth temperature. After a second AIN interlayer 3b according to claim 3, the actual thick GaN layer 4 started, which concludes with the component structure or this ethält. The tension can be influenced by the thicknesses and the compositions of the layers, whereby they can be adjusted so that the substrate / layer system at the end, ie after cooling to room temperature is ideally flat and crack-free.

AbkürzungenAbbreviations

Alal
Aluminiumaluminum
Gaga
Galliumgallium
Gruppe-IIIGroup III
Elemente aus der dritten Hauptgruppe des Periodensystems der ElementeElements from the third Main group of the Periodic Table of the Elements
Gruppe-III-NGroup III-N
Verbindungshalbleiter aus Elementen der dritten Hauptgruppe des Periodensystems der Elemente mit StickstoffCompound semiconductor from elements of the third main group of the periodic table of the elements with nitrogen
MOVPEMOVPE
metal organic chemical vapor phase epitaxy, metallorganische Gasphasenepitaxiemetal organic chemical vapor phase epitaxy, organometallic vapor phase epitaxy
NN
Stickstoffnitrogen
SiSi
Silizium; als Substrat sind außer gewöhnlichen Si-Substraten auch Substrate wie z. B. Silicon-on-insulator Substrate eingeschlossenSilicon; as a substrate are out of the box ordinary Si substrates also substrates such as B. Silicon-on-insulator Substrates included
SiCSiC
Siliziumcarbitsilicon carbide
FACELOFACELO
Faceted Epitaxial Lateral Overgrowth, facettiertes epitaktisches laterales ÜberwachsenFaceted epitaxial Lateral Overgrowth, faceted epitaxial lateral overgrowth

Referenzenreferences

  • [Dadgar 2001] A. Dadgar et al., Jpn. J. Appl. Phys. 39, L1183 (2000)[Dadgar 2001] A. Dadgar et al., Jpn. J. Appl. Phys. 39, L1183 (2000)
  • [Dadgar 2004] A. Dadgar, R. Clos, G. Strassburger, F. Schulze, P. Veit, T. Hempel, J. Bläsing, A. Krtschil, I. Daumiller, M. Kunze, A. Kaluza, A. Modlich, M. Kamp, A. Diez, J. Christen, and A. Krost, in Advances in Solid State Physics 44, B. Kramer Herausgeber, Springer (2004)[Dadgar 2004] A. Dadgar, R. Clos, G. Strassburger, F. Schulze, P. Veit, T. Hempel, J. Bläsing, A. Krtschil, I. Daumiller, M. Kunze, A. Kaluza, A. Modlich, M. Kamp, A. Diez, J. Christen, and A. Krost, in Advances in Solid State Physics 44, B. Kramer Editor, Springer (2004)
  • [Feltin 2001] E. Feltin, B. Beaumont, M. Laügt, P. de Mierry, P. Vennéguès, M. Leroux, P. Gibart, Physica Status Solidi (a) 188, 531 (2001)[Feltin 2001] E. Feltin, B. Beaumont, M. Laugen, P. de Mierry, P. Vennéguès, M. Leroux, P. Gibart, Physica Status Solidi (a) 188, 531 (2001)
  • [Honda 2001] Yoshiaki Honda, Yasushi Iyechika, Takayoshi Maeda, Hideto Miyake, and Kazumasa Hiramatsu, Jpn. J. Appl. Phys, Part 2 40, L309 (2001)[Honda 2001] Yoshiaki Honda, Yasushi Iyechika, Takayoshi Maeda, Hideto Miyake, and Kazumasa Hiramatsu, Jpn. J. Appl. Phys, Part 2 40, L309 (2001)

Claims (3)

Verfahren zum epitaktischen Wachstum dicker, rissfreier Gruppe-III-Nitrid Halbleiterschichten mittels metallorganischer Gasphasenepitaxie auf Si oder SiC, gekennzeichnet durch das Abscheiden einer zum Puffermaterial zugverspannten Al-haltigen Gruppe-III-Nitrid Zwischenschicht, die bei derselben oder einer höheren Temperatur als das Puffermaterial aufgewachsen wird und eine Dicke besitzt, die dazu führt, dass die Al-haltige Schicht mindestens teilweise oder vollständig relaxiert.Process for epitaxial growth thicker, crack-free group III nitride semiconductor layers by means of organometallic Gas phase epitaxy on Si or SiC, characterized by the deposition an Al-containing Group III nitride intermediate layer tensioned to the buffer material, those at the same or higher Temperature as the buffer material is grown and a thickness owns that leads to that the Al-containing layer at least partially or completely relaxes. Verfahren nach Anspruch 1, gekennzeichnet durch das Wachsen einer 15 bis 200 nm dicken AIN Zwischenschicht.Method according to claim 1, characterized by Growing a 15 to 200 nm thick AIN intermediate layer. Verfahren nach Anspruch 1 oder 2 gekennzeichnet, durch das wiederholte Wachsen einer zum Puffermaterial zugverspannten AI-haltigen Gruppe-III-Nitrid Zwischenschicht.A method according to claim 1 or 2, characterized by the repeated growth of a zugensgespannten to the buffer material Al-containing Group III nitride intermediate layer.
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EP2112699A2 (en) 2006-02-23 2009-10-28 Azzuro Semiconductors AG Nitride-based semiconductor product and method for its production
US9054017B2 (en) 2007-03-09 2015-06-09 Cree, Inc. Thick nitride semiconductor structures with interlayer structures and methods of fabricating thick nitride semiconductor structures
US7825432B2 (en) 2007-03-09 2010-11-02 Cree, Inc. Nitride semiconductor structures with interlayer structures
US8324005B2 (en) 2007-03-09 2012-12-04 Cree, Inc. Methods of fabricating nitride semiconductor structures with interlayer structures
US8362503B2 (en) 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures
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US8420439B2 (en) 2008-11-06 2013-04-16 Osram Opto Semiconductors Gmbh Method of producing a radiation-emitting thin film component and radiation-emitting thin film component
EP2538435A4 (en) * 2010-02-16 2013-12-04 Ngk Insulators Ltd Epitaxial substrate and method for producing same
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