WO2007117576A3 - Gas manifolds for use during epitaxial film formation - Google Patents
Gas manifolds for use during epitaxial film formation Download PDFInfo
- Publication number
- WO2007117576A3 WO2007117576A3 PCT/US2007/008541 US2007008541W WO2007117576A3 WO 2007117576 A3 WO2007117576 A3 WO 2007117576A3 US 2007008541 W US2007008541 W US 2007008541W WO 2007117576 A3 WO2007117576 A3 WO 2007117576A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film formation
- epitaxial film
- use during
- during epitaxial
- gas manifolds
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/12—Etching in gas atmosphere or plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07754972A EP2021525A2 (en) | 2006-04-07 | 2007-04-06 | Gas manifolds for use during epitaxial film formation |
JP2009504307A JP2009533843A (en) | 2006-04-07 | 2007-04-06 | Gas manifold for use during epitaxial film formation |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US79022706P | 2006-04-07 | 2006-04-07 | |
US60/790,227 | 2006-04-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007117576A2 WO2007117576A2 (en) | 2007-10-18 |
WO2007117576A3 true WO2007117576A3 (en) | 2008-10-16 |
Family
ID=38581635
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/008541 WO2007117576A2 (en) | 2006-04-07 | 2007-04-06 | Gas manifolds for use during epitaxial film formation |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP2021525A2 (en) |
JP (1) | JP2009533843A (en) |
KR (1) | KR20090006144A (en) |
CN (1) | CN101415859A (en) |
TW (1) | TW200805456A (en) |
WO (1) | WO2007117576A2 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7674337B2 (en) | 2006-04-07 | 2010-03-09 | Applied Materials, Inc. | Gas manifolds for use during epitaxial film formation |
US7655543B2 (en) * | 2007-12-21 | 2010-02-02 | Asm America, Inc. | Separate injection of reactive species in selective formation of films |
CN101643904B (en) * | 2009-08-27 | 2011-04-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Deep silicon etching device and intake system thereof |
JP5864360B2 (en) * | 2011-06-30 | 2016-02-17 | 東京エレクトロン株式会社 | Silicon film forming method and apparatus therefor |
SG11201609741XA (en) * | 2014-06-13 | 2016-12-29 | Applied Materials Inc | Dual auxiliary dopant inlets on epi chamber |
EP3918632A4 (en) * | 2019-01-31 | 2022-10-26 | Lam Research Corporation | Multi-location gas injection to improve uniformity in rapid alternating processes |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5849092A (en) * | 1997-02-25 | 1998-12-15 | Applied Materials, Inc. | Process for chlorine trifluoride chamber cleaning |
US6055927A (en) * | 1997-01-14 | 2000-05-02 | Applied Komatsu Technology, Inc. | Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology |
US20030066486A1 (en) * | 2001-08-30 | 2003-04-10 | Applied Materials, Inc. | Microwave heat shield for plasma chamber |
US6590344B2 (en) * | 2001-11-20 | 2003-07-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Selectively controllable gas feed zones for a plasma reactor |
US20040182423A1 (en) * | 2003-03-07 | 2004-09-23 | Takashi Nakao | Method for cleaning a manufacturing apparatus and a manufacturing apparatus |
-
2007
- 2007-04-06 JP JP2009504307A patent/JP2009533843A/en not_active Withdrawn
- 2007-04-06 WO PCT/US2007/008541 patent/WO2007117576A2/en active Application Filing
- 2007-04-06 EP EP07754972A patent/EP2021525A2/en not_active Withdrawn
- 2007-04-06 CN CNA2007800125166A patent/CN101415859A/en active Pending
- 2007-04-06 KR KR1020087026634A patent/KR20090006144A/en not_active Application Discontinuation
- 2007-04-09 TW TW096112380A patent/TW200805456A/en unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6055927A (en) * | 1997-01-14 | 2000-05-02 | Applied Komatsu Technology, Inc. | Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology |
US5849092A (en) * | 1997-02-25 | 1998-12-15 | Applied Materials, Inc. | Process for chlorine trifluoride chamber cleaning |
US20030066486A1 (en) * | 2001-08-30 | 2003-04-10 | Applied Materials, Inc. | Microwave heat shield for plasma chamber |
US6590344B2 (en) * | 2001-11-20 | 2003-07-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Selectively controllable gas feed zones for a plasma reactor |
US20040182423A1 (en) * | 2003-03-07 | 2004-09-23 | Takashi Nakao | Method for cleaning a manufacturing apparatus and a manufacturing apparatus |
Also Published As
Publication number | Publication date |
---|---|
WO2007117576A2 (en) | 2007-10-18 |
KR20090006144A (en) | 2009-01-14 |
CN101415859A (en) | 2009-04-22 |
JP2009533843A (en) | 2009-09-17 |
TW200805456A (en) | 2008-01-16 |
EP2021525A2 (en) | 2009-02-11 |
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