CN101415859A - Gas manifolds for use during epitaxial film formation - Google Patents

Gas manifolds for use during epitaxial film formation Download PDF

Info

Publication number
CN101415859A
CN101415859A CNA2007800125166A CN200780012516A CN101415859A CN 101415859 A CN101415859 A CN 101415859A CN A2007800125166 A CNA2007800125166 A CN A2007800125166A CN 200780012516 A CN200780012516 A CN 200780012516A CN 101415859 A CN101415859 A CN 101415859A
Authority
CN
China
Prior art keywords
chamber
manifold
epitaxial
deposition
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007800125166A
Other languages
Chinese (zh)
Inventor
D·伊西卡瓦
C·R·梅茨纳
A·佐嘉吉
Y·金
A·V·萨蒙罗弗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN101415859A publication Critical patent/CN101415859A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/12—Etching in gas atmosphere or plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention provides methods, systems, and apparatus for epitaxial film formation that includes an epitaxial chamber adapted to form an epitaxial layer on a substrate; a deposition gas manifold adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber; and an etchant gas manifold, separate from the deposition gas manifold, and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber. Numerous other aspects are disclosed.

Description

Forming the gas manifold that uses during the epitaxial film
The contrast of related application
The application requires to put forward on April 7th, 2006 right of priority of No. the 60/790th, 227, the U.S. Provisional Patent Application case of Shen and called after " forming the gas manifold that uses during the epitaxial film ".The application also requires to put forward on April 7th, 2006 right of priority of No. the 60/790th, 066, U.S. Provisional Patent Application case that Shen and called after " be used for the cluster that epitaxial film forms ".This application case also relates to the U.S. patent application case the 11/047th of carrying the Shen on January 28th, 2005, No. 323 and the U.S. patent application case the 11/227th of carrying the Shen on September 14th, 2005, No. 974, it be carried on December 1st, 2004 Shen No. the 11/001st, 774, U.S. patent application case the part continuation application and require its right of priority.More than each application case all incorporate into for your guidance at this on the whole.
Technical field
The present invention broadly is the manufacturing about semiconductor device, and more clearly is about forming the gas manifold that uses during the epitaxial film.
Background technology
A kind of known selective epitaxial process, it comprises a deposition reaction and an etching reaction.Deposition reaction betides epitaxial film and polycrystal layer with etching reaction simultaneously with different relatively speed of response.In deposition step, yet being formed at the single-crystal surface polycrystal layer, epitaxial film is deposited on the second layer at least, on existing polycrystal layer and uncrystalline layer.Yet sedimentary polycrystal layer is usually by with the speed etching faster than epitaxial film.Therefore, by changing the concentration of etchant gasses, selectivity technology finally can cause extension material deposition, with limited or do not have a polycrystalline material deposition at all.For example, selective epitaxial process can cause the epitaxial film of siliceous material to be formed on the monocrystalline silicon surface, and deposition does not remain on the distance piece simultaneously.
Selective epitaxial process has some shortcomings usually.In order in such epitaxy technique, to keep selectivity, must in whole deposition step, control and the chemical concentrations and the temperature of reaction of regulating precursor.If enough silicon precursors are not provided, etching reaction can get the mastery and slow down integrated artistic so.And, also may cause over etching (over etching) injury to substrate features.If enough etchant precursor are not provided, the deposition reaction meeting gets the mastery also thereby is reduced in substrate surface and forms monocrystalline and polycrystalline Material Selection everywhere so.And known selective epitaxial process needs a higher temperature of reaction usually, such as about 800 ℃, 1,000 ℃ or higher.Because the consideration of heat budget and possibility uncontrolled nitrogenizing reaction (on the substrate surface) are not found pleasure in technology and are seen so high temperature.
Before
Figure A200780012516D0006155650QIETU
The U.S. patent application case the 11/001st of carrying the Shen on December in 2004 1 of going into, No. 774 (case number 9618), a kind of alternately gas supply (alternating gas supply is described, AGS) technology, it comprises the epitaxial film of the circulation of repeated deposition step and etching step up to thickness that formation is desired, and this technology can be used as a kind of alternative techniques of known selective epitaxial process.Because the AGS process using independently deposits and etching step, need not keep precursors to deposit concentration and need not keep etchant precursor concentration in etching step in deposition step.In some example, may use lower temperature of reaction.
No matter for selective epitaxial or AGS technology both, still need effectively to carry out the system of this class technology.
Summary of the invention
In some aspect, the invention provides an epitaxial film and form system, it comprises one and is suitable for forming the epitaxial chamber of epitaxial film on substrate; One is suitable for providing at least one deposition gases and the carrier gas deposition gases manifold to epitaxial chamber; And one separate with this deposition gases manifold and be suitable for providing at least a etchant gasses and the carrier gas etchant gasses manifold to this epitaxial chamber.
On the other hand, the invention provides one and form the epitaxial film method, it comprises from the deposition gases manifold provides an at least one deposition gases and a carrier gas to an epitaxial chamber; And from providing an at least one etchant gasses and a carrier gas to this epitaxial chamber with the isolating etchant gasses manifold of this deposition gases manifold.
Again on the other hand in, the invention provides one and be used in the equipment that forms epitaxial film, it comprises that one is coupled to the epitaxial chamber mixing zone (mixingjunction) of (it is fit to be used for forming an epitaxial film on a substrate); One is fit to provide at least one deposition gases and the carrier gas deposition gases manifold to this epitaxial chamber; And an etchant gasses manifold, it separates with this deposition gases manifold, and is suitable for providing an at least one etchant gasses and a carrier gas to this epitaxial chamber.
Again on the other hand in, the invention provides an equipment that is used to form an epitaxial film, it comprises that one is coupled to the hybrid chamber of an epitaxial chamber (it is adapted at forming this epitaxial film on the substrate); One is fit to provide at least one deposition gases and the carrier gas deposition gases manifold to this epitaxial chamber; And an etchant gasses manifold, it separates with this deposition gases manifold, and is suitable for providing an at least one etchant gasses and a carrier gas to this epitaxial chamber.
Further feature of the present invention and aspect become apparent more completely by following embodiment, appended claim and accompanying drawing.
Description of drawings
Fig. 1 is the synoptic diagram that meets the first demonstration epitaxial film formation system of the embodiment of the invention.
Fig. 2 is the synoptic diagram that meets the second demonstration epitaxial film formation system of the embodiment of the invention.
Fig. 3 is the synoptic diagram that meets the 3rd demonstration epitaxial film formation system of the embodiment of the invention.
Fig. 4 is the synoptic diagram that meets the 4th demonstration epitaxial film formation system of the embodiment of the invention.
The primary clustering nomenclature
100 first demonstration epitaxial films form system's 101 epitaxial chamber
103 deposition manifold, 105 chamber valve systems
107 deposition gas line, 109 etchant manifold
111 etchant gas line, 113 mixing zones
115a-d, 123a-b flow director
117a-d, 125a-b gas source
First group of gas tube of 119a-d, 127a-b
Second group of gas tube of 121a-d, 129a-b
131,305,309 exocoel flow directors
133,307,311 inner chamber flow directors
135a-b exocoel gas tube 137 inner chamber gas tubes
200 second demonstration epitaxial films form system's 201 hybrid chambers
300 the 3rd demonstration epitaxial films form system's 301 deposition valve-system
303 etchant valve system, 313 exocoel mixing zones
315 inner chamber mixing zones
400 the 4th demonstration epitaxial films form system
403 internal mix chambeies, 401 external mix chambeies
I interior region O external region
Embodiment
Known epitaxial film forms system because etching and deposition step are carried out simultaneously, therefore adopts a single deposition and etchant gasses manifold usually.(alternating gassupply, AGS) in the epitaxial film formation system, then succeedingly is carried out etching and deposition step in alternately gas supply.The U.S. patent application case the 11/001st of Shen is put forward in the AGS system description of demonstration on December 1st, 2004, No. 774 (case number 9618) and the U.S. patent application case the 11/227th of carrying the Shen on September 14th, 2005, in No. 974 (case 9618/P01 bars), it is incorporated herein with bibliography in full hereby.
Be preferably in the AGS system and have independently etching and deposition manifold, so that when being converted to etching and being converted to deposition from etching from deposition, deposition gases and etchant gasses can be used for epitaxial chamber immediately.The invention provides and adopt independently etchant manifold and the independently method and apparatus of deposition manifold.
Fig. 1 is the synoptic diagram (to call " first epitaxial system 100 " in the following text) that meets the first demonstration epitaxial film formation system 100 of the specific embodiment of the invention.First epitaxial system 100 comprises an epitaxial chamber 101, is coupled to (1) one deposition manifold 103, and it is via a chamber valve system 105 and a deposition gas line 107 and couple with this epitaxial chamber 101; And (2) one etchant manifold 109, it is via this chamber valve system 105 and an etchant gas line 111 and couple with this epitaxial chamber 101.As shown in Figure 1, chamber valve system 105, deposition gas line 107 are that 113 (for example, T type bonding lands or similarly coupling mode) are located to couple in the mixing zone with etchant gas line 111.
According to the embodiment of the invention, epitaxial chamber 101 can comprise any known epitaxial chamber that is suitable for forming epitaxial film on or a plurality of substrate.Though can use other epitaxial chamber and system, can be in Epi
Figure A200780012516D00081
System and Poly
Figure A200780012516D00082
System's (be positioned at the AppliedMaterials of Santa Clara, California, Inc. provides) finds the epitaxial chamber of a demonstration.
With reference to Fig. 1, deposition manifold 103 can comprise flow director 115a-d (such as mass flow controller (mass flow controller, MFC), volumetric flow rate controller (volume flow controller, VFC), valve or the like).Flow director 115a-d can be coupled to gas source 117a-d (such as gas cylinder and process pipeline or the like) via first group of gas tube 119a-d.Flow director 115a-d also can be coupled to deposition gas line 107 via second group of gas tube 121a-d.Gas tube 119a-d, 121a-d and deposition gas line 107 are made up of stainless steel pipes or other suitable tubes/conduits road (for example AISI 316L or the like).
Among the embodiment of Fig. 1, deposition manifold 103 can comprise four flow director 115a-d that are coupled to four gas source 117a-d.Yet, might more than or be less than four flow director 115a-d.In addition, might more than or be less than four gas source 117a-d that are coupled to flow director 115a-d.For example, a gas (such as nitrogen, silane, hydrogenchloride or the like) source can be coupled to the source that surpasses a flow director and surpass a gas and can be coupled to a flow director.
Though can use any suitable facility that couples, flow director 115a-d can couple by application examples such as compressible pad and gas tube 119a-d and 121a-d.Flow director 115a-d may be the same or different each other.In addition, flow director 115a-d can be with quality, volume, time (for example open according to the time and turn off gas trap) or the like dominant discharge.
Fig. 1 describes gas source 117a-d and is configured in deposition manifold 103 outsides.Yet gas source 117a-d also may be contained in the deposition manifold 103.Gas source 117a-d (for example gas cylinder or the like) can be configured in time clean room (sub-fab) or other this class is positioned at outside the semiconductor subassembly manufacturing clean room or the position of hidden pipe.Can select that gas source 117a-d is configured in semiconductor subassembly and make in clean room and the hidden pipe close one troop instrument place or be positioned among this cluster tool.Further, gas source 117a-d can be provided by the equipment of semiconductor subassembly manufacturing building.Be accommodated among the gas source 117a-d or can be gas, liquid and/or solid form, and can be applied to well remove to form an epitaxial film in the epitaxial chamber 101 in the follow-up gas form that is evaporated into the chemical compound that gas source 117a-d transports.
With reference to Fig. 1, etchant manifold 109 can comprise flow director 123a-b (such as MFC (mass flow controller), VFC (volumetric flow rate controller), valve or the like).Flow director 123a-b can be coupled to gas source 125a-b (such as gas cylinder, process pipeline or the like) via first group of gas tube 127a-b.Flow director 123a-b also can be coupled to etchant gas line 111 via second group of gas tube 129a-b.Gas tube 127a-b, 129a-b and etchant gas line are made up of stainless steel pipes or other suitable tubes/conduits road (for example AISI316L or the like).
Among the embodiment of Fig. 1, etchant manifold 109 can comprise two flow director 123a-b that are coupled to two gas source 127a-b.Yet, might more than or be less than two flow director 123a-b.In addition, might more than or be less than two gas source 125a-b that are coupled to flow director 123a-b.For example, the source of a gas (such as nitrogen, hydrogenchloride, chlorine or the like) can be coupled to the source that surpasses a flow director and surpass a gas and can be coupled to a flow director.
Though can use any suitable facility that couples, flow director 123a-b can couple by application examples such as compressible pad and gas tube 127a-b and 129a-b.In addition, flow director 123a-b may be the same or different each other.Flow director 123a-b can be with quality, volume, time (for example open according to the time and turn off gas trap) or the like dominant discharge.
Fig. 1 describes gas source 125a-b and is configured in etchant manifold 109 outsides.Yet gas source 125a-b may be contained in the etchant manifold 109.Gas source 125a-b (for example gas cylinder or the like) can be configured in time clean room (sub-fab) or other this class is positioned at outside the semiconductor subassembly manufacturing clean room or the position of hidden pipe.Can select that gas source 125a-b is configured in semiconductor subassembly and make in clean room and the hidden pipe close one troop instrument place or be positioned among this cluster tool.Further, gas source 125a-b can be provided by the equipment of semiconductor subassembly manufacturing building.Be accommodated among the gas source 125a-b or can be gas, liquid and/or solid form, and can be evaporated into gas form and be applied to remove to form an epitaxial film in the epitaxial chamber 101 in follow-up with the chemical compound that gas source 125a-b transports.
Chamber valve system 105 can comprise an exocoel flow director 131 and an inner chamber flow director 133.Exocoel flow director 131 can be coupled to epitaxial chamber 101 external region O via exocoel gas tube 135a-b (such as stainless steel or similar tubes/conduits road).Inner chamber flow director 133 can be coupled to epitaxial chamber 101 interior region I via inner chamber gas tube 137 (such as stainless steel or similar tubes/conduits road).The interior region I that notes the epitaxial chamber 101 that Fig. 1 describes and external region O draw in proportion and only are to illustrate.The relative size of interior region I and external region O and position can change according to the application of epitaxial chamber 101.
Exocoel flow director 131 can use welding with inner chamber flow director 133 or any other suitable method is coupled to mixing zone 113.Exocoel flow director 131 may be MFC, volumetric flow rate controller, valve (for example gas type) or the like with inner chamber flow director 133.Exocoel flow director 131 also can use welding or other suitable method is coupled to gas tube 135a-b.
Mixing zone 113 can be the known T type bonding land that a gas tube 107 and 111 couples.Mixing zone 113 also can comprise other geometric scheme.For example, can use Y type bonding land rather than T type bonding land, just the part as bonding land (mixed gas) has many different and changeable specifications.Perhaps, the bonding land also can be X type bonding land, and wherein different branches can be coupled to exocoel flow director 131, inner chamber flow director 133, deposition gas line 107 and etchant gas line 111 respectively.According to the gas source of using, the selection of particular geometric and volume arrangement can be improved gas blended consistence in the mixing zone 113.
In AGS technology, by independently deposition manifold 103 and the independently application of etchant manifold 109, gas used during etching can be applied to epitaxial chamber 101 immediately after deposition.Similarly, used gas also can be used to epitaxial chamber 101 immediately during deposition after etching.Note, can continue in deposition that both flow out carrier gas (such as nitrogen, hydrogen or the like) from deposition manifold 103 and etchant manifold 109 during with etching, avoid well owing to open/turn off the mobile surging (flow spikes) that carrier gas causes.For instance, flow rate of carrier gas can be much larger than etching/whole flow velocity (carrier gas approximately be 10-20slm approximately be 1slm or still less with respect to etching/deposition gases) for example at least one embodiment.Though can use other flow velocity, in an example embodiment, carrier gas stream continues to flow out from deposition manifold 103 and etchant manifold 109 with the speed of about 10slm.
Fig. 2 is the synoptic diagram (' second epitaxial system 200 afterwards) that meets the second demonstration epitaxial film formation system 200 of the embodiment of the invention.Second epitaxial system 200 of Fig. 2 is similar in appearance to first epitaxial system 100 of Fig. 1, but the mixing zone 113 of using a hybrid chamber 201 replacement Fig. 1 first epitaxial system.As shown in Figure 2, chamber valve system 105, deposition gas line 107 all are coupled to hybrid chamber 201 with etchant gas line 111.
Hybrid chamber 201 can be any chamber shape/size that can improve its mixedness before gas enters epitaxial chamber 101.For example, hybrid chamber 201 can be columniform, cubical, circular or the like.
200 runnings of second epitaxial system are similar in appearance to first epitaxial system 100 of Fig. 1.Yet because hybrid chamber 201, the gas mixing phenomena of improvement occurs in gas and enters before the epitaxial chamber 101.In certain embodiments, the gas mixing that improves like this can improve epitaxial film surface morphology (for example, by before entering epitaxial chamber 101 mixed carrier gas and etching and/or deposition gases) more equably.
Fig. 3 is the synoptic diagram (the ' the 3rd epitaxial system 300 afterwards) that meets the 3rd demonstration epitaxial film formation system 300 of the embodiment of the invention.The 3rd epitaxial system 300 of Fig. 3 is similar in appearance to first epitaxial system 100 of Fig. 1, but replaces chamber valve system 105 with a deposition valve-system 301 with etchant valve system 303.
Deposition valve-system 301 has an exocoel flow director 305, and an inner chamber flow director 307.Similarly, etchant valve system 303 comprises an exocoel flow director 309, and an inner chamber flow director 311.
The 3rd epitaxial system 300 also can an exocoel mixing zone 313 and an inner chamber mixing zone 315 replace the mixing zone 113 of Fig. 1.Both all are coupled to exocoel mixing zone 313 the exocoel flow director 305 of deposition valve-system 301 and the exocoel flow director of etchant valve system 303 309.Both all are coupled to inner chamber mixing zone 315 the inner chamber flow director 307 of deposition valve-system 301 and the exocoel flow director of etchant valve system 303 311.
As shown in Figure 3, deposition gas line 107 is coupled to the exocoel flow director 305 and inner chamber flow director 307 of deposition valve-system 301.Etchant gas line 111 is coupled to the exocoel flow director 309 and inner chamber flow director 311 of etchant valve system 303.Flow director 305,307,309 and 311 can be MFCs, volumetric flow rate controller, valve (for example gas type) or any other suitable flow director.
300 runnings of the 3rd epitaxial system are similar in appearance to first epitaxial system 100 of Fig. 1.Yet, in some specific embodiment, mixing zone 313,315 is configured to can improve gas and mix near epitaxial chamber 101 (mixing zone 113 of Fig. 1 relatively).Among at least one embodiment of the present invention, flow director 305,307,309 and 311 is set in a position/flow rate of being desired separately and stays open state (for example, avoid delay well and surging) when film forms.For instance, only there are flow director 115a-d and 123a-b to be opened and to shut.
Fig. 4 is the 4th demonstration epitaxial film that meets the embodiment of the invention synoptic diagram that forms system 400 (to call " the prolong all round system 400 " in the following text).Of Fig. 4 prolongs three epitaxial system 300 of system 400 similar in appearance to Fig. 3 all round, but replaces exocoel mixing zone 313 and replace inner chamber mixing zone 315 with an internal mix chamber 403 with an external mix chamber 401.Therefore, the exocoel flow director 305 of deposition valve-system 301 all is coupled to external mix chamber 401 with the exocoel flow director 309 of etchant valve system 303.Similarly, the inner chamber flow director 307 of deposition valve-system 301 all is coupled to internal mix chamber 403 with the inner chamber flow director 311 of etchant valve system 303.
Hybrid chamber 401,403 can be any chamber shape/size that can improve its mixedness before gas enters epitaxial chamber 101.For example, hybrid chamber 401,403 can be columniform, cubical, circular or the like.
To prolong the 3rd epitaxial system 300 of the running of system 400 and Fig. 3 all round similar.Yet because hybrid chamber 401,403, the gas mixing phenomena of improvement occurs in gas and enters before the epitaxial chamber 101.Among some embodiment, the gas mixing of Gai Shaning can improve epitaxial film surface morphology (for example by before entering epitaxial chamber 101 mixed carrier gas and etching and/or deposition gases) more equably like this.
The narration of front only discloses example embodiment of the present invention.Being familiar with the technology personage can obviously learn, it can distortion above disclose apparatus and method under not departing from scope of invention and spirit.For example, though deposition manifold 103 and etchant manifold 109 are presented at the relative both sides of epitaxial chamber 101, be appreciated that deposition manifold 103 and etchant manifold 109 may be on identical one side of epitaxial chamber 101 or any other suitable position when independently manifold (for example residual).Moreover, as above being set forth among Fig. 1-4, deposition manifold 103 can be to use independent etching pipeline to transmit the overall gas manifold part that etching reagent is given reaction chamber (being independent of the pipeline that should be used for transmitting the deposition form) well with etchant manifold 109.
Among at least one embodiment of the present invention, the introducing of etching reagent (for example chlorine) is to take place by an independent feed lines, does not need to mix with other gas in the gas panels (for example reactant gases, deposition gases or the like).For example, by an introducing with independent line generation etching reagent of flow rate control device.
In one certain embodiments, the introducing of etching reagent is to take place by an independent line, this independent line has flow rate control device, and the division near reaction chamber (for example an epitaxial film forms the chamber) time in order to reach etched consistence, and good dispersion chamber is introduced the etching reagent between the district.Among some embodiment, meeting application traffic divider or valve are in each division place.
Among some embodiment, the introducing of etching reagent is to have an independent line near the mixing tank of reaction chamber (for example an epitaxial film form chamber) by one to take place, and does not need to mix with other gas in the gas panels.
Among at least one embodiment, the introducing of etching reagent is to introduce the independent line (from gas panels to reaction chamber) in district and take place at each chamber with one.For example, the introducing of etching reagent has a mixing tank near reaction chamber with one, and introduces the independent line (from gas panels to reaction chamber) in district and take place at each chamber.Among some embodiment, the introducing of etching reagent is with an independent line (from gas panels to reaction chamber), and only has carrier gas such as nitrogen, helium, argon or the like to be coupled to the etching pipeline of gas panels and take place.
Among some embodiment, the introducing of etching reagent may take place, wherein etching reagent enlivens mixing of chemicals (for example liquid) with other, needs step to occur in when the pressure in the pipeline and is no more than about 20 Bristols of cavity pressure when above.
Among at least one embodiment, chlorine can be applied in that epitaxial film forms, cleaning and/or the siliceous material of etching (being preferably under about 1 Bristol or the higher cavity pressure).
Among some embodiment, has the introducing of etching reagent, wherein etching reagent mixes with other gas/liquid (such as silicon precursor, admixture gas or the like) in gas panels, good deposition, cleaning and/or the siliceous material of etching (being preferably under about 1 Bristol (torr) or the higher cavity pressure).For example, can provide the reaction chamber of heat to use etching reagent (for example chlorine) well in deposition, cleaning and/or the siliceous material of etching (being preferably under about 1 Bristol or the higher cavity pressure).Comprise a gas panels, a reaction chamber and one and be coupled to an apparatus of the transfer line of reaction chamber from gas panels, it can use etching reagent (for example chlorine) in deposition, cleaning and/or the siliceous material of etching (being preferably under about 1 Bristol or the higher cavity pressure).
Among some embodiment, the introducing of etching reagent may take place, wherein remaining liquid (such as silicon precursor, admixture gas or the like) mixes in etching reagent and the gas panels.Among at least one embodiment, the introducing of etching reagent be by one in the metering valve upstream and the independent line with flow rate control device take place, and this independent line divides near reaction chamber the time, good dispersion chamber is introduced the etching reagent between the district.Identical metering valve can be applied in chamber and introduce the distribution of removing to change etching reagent and remaining reaction gas between the district.Among some embodiment, the introducing of etching reagent has a mixing tank near reaction chamber with one, and introduces the independent line (from gas panels to reaction chamber) in district and take place at each chamber.
Therefore,, should be understood that other embodiment that following claim defined also can fall in spirit of the present invention and the scope though the present invention discloses with its example embodiment.

Claims (20)

1. an epitaxial film forms system, and it comprises at least:
Be suitable on substrate, forming the epitaxial chamber of epitaxial film;
Be suitable for providing an at least one deposition gases and a carrier gas deposition gases manifold to this epitaxial chamber; And
Separate with this deposition gases manifold and be suitable for providing at least one etchant gasses and a carrier gas etchant gasses manifold to this epitaxial chamber.
2. the system as claimed in claim 1, wherein this epitaxial film forms system and comprises that more one is coupled to the chamber valve system of this epitaxial chamber, and it is between this deposition gases manifold and this etching gas agent manifold.
3. system as claimed in claim 2, wherein this chamber valve system is coupled to this deposition gases manifold and this etchant gasses manifold via a mixing zone.
4. system as claimed in claim 2, wherein this chamber valve system is coupled to this deposition gases manifold and this etchant gasses manifold via a hybrid chamber.
5. the system as claimed in claim 1, wherein this epitaxial film forms system and more comprises deposition valve-system, is coupled to this epitaxial chamber and this deposition gases manifold.
6. the system as claimed in claim 1, wherein this epitaxial film forms system and more comprises etchant valve system, is coupled to this epitaxial chamber and this etchant gasses manifold.
7. the system as claimed in claim 1, wherein this epitaxial film forms system and more comprises:
Deposition valve-system is coupled to this epitaxial chamber and this deposition gases manifold; And
Etchant valve system is coupled to this epitaxial chamber and this etchant gasses manifold.
8. the system as claimed in claim 1, wherein this epitaxial film forms system and more comprises:
Deposition valve-system is coupled to this deposition gases manifold and one and leads to the mixing zone of this epitaxial chamber; And
Etchant valve system is coupled to this etchant gasses manifold and one and leads to the mixing zone of this epitaxial chamber.
9. the system as claimed in claim 1, wherein this epitaxial film forms system and more comprises:
Deposition valve-system is coupled to the hybrid chamber that this deposition gases manifold and one leads to this epitaxial chamber; And
Etchant valve system is coupled to the hybrid chamber that this etchant gasses manifold and one leads to this epitaxial chamber.
10. method that forms an epitaxial film, it comprises at least:
Provide an at least one deposition gases and a carrier gas to an epitaxial chamber from the deposition gases manifold; And
From providing at least one etchant gasses and carrier gas to this epitaxial chamber with the isolating etchant gasses manifold of this deposition gases manifold.
11. method as claimed in claim 10 comprises that more application one is coupled to the chamber valve system of this epitaxial chamber, it removes to transport this gas and gives this epitaxial chamber between this deposition gases manifold and this etchant gasses manifold.
12. method as claimed in claim 11 comprises that more application one is coupled to the mixing zone of this chamber valve system, this deposition gases manifold and this etchant gasses manifold.
13. method as claimed in claim 11 comprises that more application one is coupled to the hybrid chamber of this chamber valve system, this deposition gases manifold and this etchant gasses manifold.
14. method as claimed in claim 10 comprises that more application one is coupled to the deposition valve-system of this epitaxial chamber and this deposition gases manifold.
15. method as claimed in claim 10 comprises that more application one is coupled to the etchant valve system of this epitaxial chamber and this etchant gasses manifold.
16. method as claimed in claim 10 more comprises and uses a deposition valve-system that is coupled to this epitaxial chamber and this deposition gases manifold, with an etchant valve system that is coupled to this epitaxial chamber and this etchant gasses manifold.
17. method as claimed in claim 10 comprises that more using one is coupled to the deposition valve-system that this deposition gases manifold and one leads to the mixing zone of this epitaxial chamber; And use one and be coupled to the etchant valve system that this etchant gasses manifold and one leads to the mixing zone of this epitaxial chamber.
18. method as claimed in claim 10 comprises that more using one is coupled to the deposition valve-system that this deposition gases manifold and one leads to the hybrid chamber of this epitaxial chamber; And use one and be coupled to the etchant valve system that this etchant gasses manifold and one leads to the hybrid chamber of this epitaxial chamber.
19. an equipment that is used to form an epitaxial film, it comprises at least:
The mixing zone is coupled to the epitaxial chamber that is suitable for forming epitaxial film on substrate;
The deposition gases manifold, it is suitable for providing an at least one deposition gases and a carrier gas to this epitaxial chamber; And
The etchant gasses manifold, it separates with this deposition gases manifold and is suitable for providing an at least one etchant gasses and a carrier gas to this epitaxial chamber.
20. the equipment in order to the formation epitaxial film, it comprises at least:
Hybrid chamber is coupled to the epitaxial chamber that is suitable for forming epitaxial film on substrate;
The deposition gases manifold, it is suitable for providing an at least one deposition gases and a carrier gas to this epitaxial chamber; And
The etchant gasses manifold, it separates with this deposition gases manifold and is suitable for providing an at least one etchant gasses and a carrier gas to this epitaxial chamber.
CNA2007800125166A 2006-04-07 2007-04-06 Gas manifolds for use during epitaxial film formation Pending CN101415859A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US79022706P 2006-04-07 2006-04-07
US60/790,227 2006-04-07

Publications (1)

Publication Number Publication Date
CN101415859A true CN101415859A (en) 2009-04-22

Family

ID=38581635

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007800125166A Pending CN101415859A (en) 2006-04-07 2007-04-06 Gas manifolds for use during epitaxial film formation

Country Status (6)

Country Link
EP (1) EP2021525A2 (en)
JP (1) JP2009533843A (en)
KR (1) KR20090006144A (en)
CN (1) CN101415859A (en)
TW (1) TW200805456A (en)
WO (1) WO2007117576A2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011023078A1 (en) * 2009-08-27 2011-03-03 北京北方微电子基地设备工艺研究中心有限责任公司 Deep silicon etching device and gas intake system for deep silicon etching device
CN102856183A (en) * 2011-06-30 2013-01-02 东京毅力科创株式会社 Method and apparatus for forming silicon film
CN113383409A (en) * 2019-01-31 2021-09-10 朗姆研究公司 Multi-position injection of gases to improve uniformity in rapid alternating processes

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7674337B2 (en) 2006-04-07 2010-03-09 Applied Materials, Inc. Gas manifolds for use during epitaxial film formation
US7655543B2 (en) * 2007-12-21 2010-02-02 Asm America, Inc. Separate injection of reactive species in selective formation of films
SG11201609741XA (en) * 2014-06-13 2016-12-29 Applied Materials Inc Dual auxiliary dopant inlets on epi chamber

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6055927A (en) * 1997-01-14 2000-05-02 Applied Komatsu Technology, Inc. Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
US5849092A (en) * 1997-02-25 1998-12-15 Applied Materials, Inc. Process for chlorine trifluoride chamber cleaning
US20030066486A1 (en) * 2001-08-30 2003-04-10 Applied Materials, Inc. Microwave heat shield for plasma chamber
US6590344B2 (en) * 2001-11-20 2003-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. Selectively controllable gas feed zones for a plasma reactor
JP3872027B2 (en) * 2003-03-07 2007-01-24 株式会社東芝 Cleaning method and semiconductor manufacturing apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011023078A1 (en) * 2009-08-27 2011-03-03 北京北方微电子基地设备工艺研究中心有限责任公司 Deep silicon etching device and gas intake system for deep silicon etching device
CN102856183A (en) * 2011-06-30 2013-01-02 东京毅力科创株式会社 Method and apparatus for forming silicon film
CN102856183B (en) * 2011-06-30 2016-08-10 东京毅力科创株式会社 The forming method of silicon fiml and formation device thereof
CN113383409A (en) * 2019-01-31 2021-09-10 朗姆研究公司 Multi-position injection of gases to improve uniformity in rapid alternating processes

Also Published As

Publication number Publication date
KR20090006144A (en) 2009-01-14
TW200805456A (en) 2008-01-16
WO2007117576A3 (en) 2008-10-16
JP2009533843A (en) 2009-09-17
WO2007117576A2 (en) 2007-10-18
EP2021525A2 (en) 2009-02-11

Similar Documents

Publication Publication Date Title
US7674337B2 (en) Gas manifolds for use during epitaxial film formation
US10604847B2 (en) Gas distribution system, reactor including the system, and methods of using the same
CN112626494B (en) Gas injection system and reactor system including the same
US8486191B2 (en) Substrate reactor with adjustable injectors for mixing gases within reaction chamber
CN101268213B (en) Device and method for continuous chemical vapour deposition under atmospheric pressure and use thereof
CN110804730A (en) Multi-port gas injection system and reactor system comprising same
CN101415859A (en) Gas manifolds for use during epitaxial film formation
KR101413189B1 (en) Separate injection of reactive species in selective formation of films
JPH0429313A (en) Device for producing semiconductor crystal
JP2001348666A (en) Method and apparatus for growing thin film on substrate
CN105441904A (en) Gas spray device, chemical vapor deposition device and method
CN102369589A (en) Method and apparatus for growing a thin film onto a substrate
CN101415865A (en) Cluster tool for epitaxial film formation
JP2011508426A5 (en)
JPS61263118A (en) Plasma cvd device
JP6814561B2 (en) Gas piping system, chemical vapor deposition equipment, film formation method and method for manufacturing SiC epitaxial wafer
CN103361624B (en) Metallo-organic compound chemical vapor deposition method and device
KR20210141384A (en) Methods for silicon germanium uniformity control using multiple precursors
CN209816328U (en) Gas injection device for epitaxial growth system
CN108728821B (en) MOCVD processing apparatus and gas supply apparatus for MOCVD
JP5481415B2 (en) Vapor growth apparatus and vapor growth method
CN1807295B (en) Apparatus for manufacturing quartz film
KR200480896Y1 (en) Precise temperature control for teos application by heat transfer fluid
CN118028777A (en) Gas control position transmission equipment and method for CVD equipment
JP3128586B2 (en) Thin film growth equipment

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C53 Correction of patent for invention or patent application
CB02 Change of applicant information

Address after: American California

Applicant after: Applied Materials Inc.

Address before: American California

Applicant before: Applied Materials Inc.

C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20090422