TW200619414A - Method of depositing a metal compound layer and apparatus for depositing a metal compound layer - Google Patents

Method of depositing a metal compound layer and apparatus for depositing a metal compound layer

Info

Publication number
TW200619414A
TW200619414A TW094143330A TW94143330A TW200619414A TW 200619414 A TW200619414 A TW 200619414A TW 094143330 A TW094143330 A TW 094143330A TW 94143330 A TW94143330 A TW 94143330A TW 200619414 A TW200619414 A TW 200619414A
Authority
TW
Taiwan
Prior art keywords
compound layer
metal compound
depositing
flow rate
source gas
Prior art date
Application number
TW094143330A
Other languages
Chinese (zh)
Inventor
Jung-Hun Seo
Young-Wook Park
Jin-Gi Hong
Kyung-Bum Koo
Eun-Taeck Lee
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200619414A publication Critical patent/TW200619414A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Abstract

In a method and an apparatus for depositing a metal compound layer, a first source gas and a second source gas may be provided onto a substrate to deposit a first metal compound layer on the substrate. The first source gas may include a metal and halogen elements, and the second source gas may include a first material capable of being reacted with the metal and a second material capable of being reacted with the halogen element. The first and the second source gases may be provided at a first flow rate ratio. A second metal compound layer may be deposited on the first metal compound layer by providing the first and the second source gases with a second flow rate ratio different from the first flow rate ratio. The apparatus may include a process chamber configured to receive a substrate, a gas supply system, and a flow rate control device.
TW094143330A 2004-12-13 2005-12-08 Method of depositing a metal compound layer and apparatus for depositing a metal compound layer TW200619414A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20040104741 2004-12-13
KR1020050049565A KR100596495B1 (en) 2004-12-13 2005-06-10 Method of depositing a metal compound and apparatus for performing the same

Publications (1)

Publication Number Publication Date
TW200619414A true TW200619414A (en) 2006-06-16

Family

ID=36787604

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094143330A TW200619414A (en) 2004-12-13 2005-12-08 Method of depositing a metal compound layer and apparatus for depositing a metal compound layer

Country Status (3)

Country Link
KR (1) KR100596495B1 (en)
CN (1) CN1789487A (en)
TW (1) TW200619414A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI552199B (en) * 2011-06-30 2016-10-01 三星顯示器有限公司 Nozzle set, atomic layer deposition apparatus including the nozzle set, and sealing method of organic light emitting device using the same
TWI671798B (en) * 2017-03-30 2019-09-11 日商國際電氣股份有限公司 Substrate processing method, substrate processing device, and program

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8207010B2 (en) * 2007-06-05 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device
JP5087657B2 (en) 2009-08-04 2012-12-05 株式会社日立国際電気 Semiconductor device manufacturing method and substrate processing apparatus
JP5610438B2 (en) * 2010-01-29 2014-10-22 株式会社日立国際電気 Substrate processing apparatus and semiconductor device manufacturing method
JP5722595B2 (en) * 2010-11-11 2015-05-20 株式会社日立国際電気 Substrate processing apparatus and semiconductor device manufacturing method
US20130143415A1 (en) * 2011-12-01 2013-06-06 Applied Materials, Inc. Multi-Component Film Deposition
JP2017503079A (en) 2014-01-05 2017-01-26 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Film deposition using spatial atomic layer deposition or pulsed chemical vapor deposition
KR102518932B1 (en) * 2023-01-27 2023-04-06 (주)브이아이테크 MTS deposition gas control system of silicon carbide deposition equipment

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100363088B1 (en) * 2000-04-20 2002-12-02 삼성전자 주식회사 Method of manufacturing barrier metal layer using atomic layer deposition method
JP4528413B2 (en) 2000-04-25 2010-08-18 日鉱金属株式会社 Vapor growth method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI552199B (en) * 2011-06-30 2016-10-01 三星顯示器有限公司 Nozzle set, atomic layer deposition apparatus including the nozzle set, and sealing method of organic light emitting device using the same
TWI671798B (en) * 2017-03-30 2019-09-11 日商國際電氣股份有限公司 Substrate processing method, substrate processing device, and program

Also Published As

Publication number Publication date
KR100596495B1 (en) 2006-07-04
CN1789487A (en) 2006-06-21
KR20060066602A (en) 2006-06-16

Similar Documents

Publication Publication Date Title
TW200619414A (en) Method of depositing a metal compound layer and apparatus for depositing a metal compound layer
WO2005124859A3 (en) Methods and apparatuses for depositing uniform layers
TW200628629A (en) Method for increasing deposition rates of metal layers from metal-carbonyl precursors
WO2006057706A3 (en) Method for deposition of metal layers from metal carbonyl precursors
WO2003065424A3 (en) Apparatus for cyclical deposition of thin films
TW200634962A (en) Method of depositing thin film on substrate using impulse ald process
WO2008085474A3 (en) Delivery device for thin film deposition
TW200609378A (en) Device and method for high-throughput chemical vapor deposition
TW200500488A (en) In-situ analysis method for atomic layer deposition process
WO2005028701A3 (en) Methods and apparatus for controlling formation of deposits in a deposition system and deposition systems and methods including the same
WO2008024566A3 (en) Overall defect reduction for pecvd films
TW200644086A (en) A plasma enhanced atomic layer deposition system and method
TW200609377A (en) Method for depositing thin film and thin film deposition system having separate jet orifices for spraying purge gas
WO2011087698A3 (en) Pecvd multi-step processing with continuous plasma
WO2010045153A3 (en) Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (pecvd)
EP1794346A4 (en) Apparatus and method for depositing a material on a substrate
WO2005087974A3 (en) Cvd processes for the deposition of amorphous carbon films
TW200717709A (en) A method for forming a ruthenium metal layer on a patterned substrate
TW200625443A (en) Film formation apparatus and method for semiconductor process
WO2009034131A3 (en) Method and arrangement for providing chalcogens
WO2007084493A3 (en) High temperature ald inlet manifold
ATE367458T1 (en) DEVICE AND METHOD FOR APPLYING A THIN FILM TO A WAFER BY DEPOSITING ATOMIC LAYERS
WO2010054075A3 (en) Plasma and thermal anneal treatment to improve oxidation resistance of metal-containing films
TW200615389A (en) Film forming method, electronic device and electronic apparatus
WO2006130817A3 (en) Deposition of uniform layer of desired material