DE102005039840A1 - Bootstrap-Dioden-Emulator mit dynamischer Substratvorspannung und Kurzschlussschutz - Google Patents

Bootstrap-Dioden-Emulator mit dynamischer Substratvorspannung und Kurzschlussschutz Download PDF

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Publication number
DE102005039840A1
DE102005039840A1 DE102005039840A DE102005039840A DE102005039840A1 DE 102005039840 A1 DE102005039840 A1 DE 102005039840A1 DE 102005039840 A DE102005039840 A DE 102005039840A DE 102005039840 A DE102005039840 A DE 102005039840A DE 102005039840 A1 DE102005039840 A1 DE 102005039840A1
Authority
DE
Germany
Prior art keywords
ldmos transistor
low
voltage
circuit
node
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102005039840A
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German (de)
English (en)
Inventor
Christian Locatelli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of DE102005039840A1 publication Critical patent/DE102005039840A1/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/618—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series and in parallel with the load as final control devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
DE102005039840A 2004-08-24 2005-08-23 Bootstrap-Dioden-Emulator mit dynamischer Substratvorspannung und Kurzschlussschutz Withdrawn DE102005039840A1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US60417704P 2004-08-24 2004-08-24
US60/604,177 2004-08-24
US11/207,465 2005-08-19
US11/207,465 US20060044051A1 (en) 2004-08-24 2005-08-19 Bootstrap diode emulator with dynamic back-gate biasing and short-circuit protection

Publications (1)

Publication Number Publication Date
DE102005039840A1 true DE102005039840A1 (de) 2006-05-11

Family

ID=35942244

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102005039840A Withdrawn DE102005039840A1 (de) 2004-08-24 2005-08-23 Bootstrap-Dioden-Emulator mit dynamischer Substratvorspannung und Kurzschlussschutz

Country Status (4)

Country Link
US (1) US20060044051A1 (ja)
JP (1) JP3937354B2 (ja)
KR (1) KR100854146B1 (ja)
DE (1) DE102005039840A1 (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7456658B2 (en) * 2006-04-07 2008-11-25 International Rectifier Corporation Circuit to optimize charging of bootstrap capacitor with bootstrap diode emulator
EP2525468B1 (en) 2011-05-19 2017-06-21 Black & Decker Inc. Electronic power apparatus
CN102412822A (zh) * 2011-11-10 2012-04-11 浙江正泰机床电气制造有限公司 接近开关
US8593211B2 (en) * 2012-03-16 2013-11-26 Texas Instruments Incorporated System and apparatus for driver circuit for protection of gates of GaN FETs
CN102623950B (zh) * 2012-03-21 2014-04-30 美的集团股份有限公司 用于高压集成电路的保护电路
TWI563795B (en) * 2014-03-13 2016-12-21 Upi Semiconductor Corp Gate driver and control method thereof
US9419509B2 (en) * 2014-08-11 2016-08-16 Texas Instruments Incorporated Shared bootstrap capacitor for multiple phase buck converter circuit and methods
TWI769160B (zh) * 2016-06-03 2022-07-01 美商英特矽爾美國有限公司 用以軟啟動大功率電荷泵的方法、電路，及電子系統
US10608501B2 (en) 2017-05-24 2020-03-31 Black & Decker Inc. Variable-speed input unit having segmented pads for a power tool
CN110958004B (zh) * 2018-09-26 2023-08-04 艾尔默斯半导体欧洲股份公司 可区分自举电容再充电和短路故障的驱动器
JP7388317B2 (ja) * 2020-08-27 2023-11-29 三菱電機株式会社 駆動回路およびインバータ装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1228509B (it) * 1988-10-28 1991-06-19 Sgs Thomson Microelectronics Dispositivo per generare una tensione di alimentazione flottante per un circuito bootstrap capacitivo
US5369319A (en) * 1992-12-21 1994-11-29 Delco Electronics Corporation Comparator having temperature and process compensated hysteresis characteristic
US5373435A (en) * 1993-05-07 1994-12-13 Philips Electronics North America Corporation High voltage integrated circuit driver for half-bridge circuit employing a bootstrap diode emulator
US5502632A (en) * 1993-05-07 1996-03-26 Philips Electronics North America Corporation High voltage integrated circuit driver for half-bridge circuit employing a bootstrap diode emulator
JP3227966B2 (ja) * 1993-12-28 2001-11-12 ソニー株式会社 ブートストラップ回路
EP0743752B1 (en) * 1995-05-17 2004-07-28 STMicroelectronics S.r.l. Charging of a bootstrap capacitance through an LDMOS transistor
US5754065A (en) * 1995-11-07 1998-05-19 Philips Electronics North America Corporation Driving scheme for a bridge transistor
JPH09172358A (ja) * 1995-12-21 1997-06-30 Toshiba Corp 高耐圧パワー集積回路
JP3694843B2 (ja) * 1996-08-08 2005-09-14 株式会社安川電機 インバータ装置
EP0887931A1 (en) * 1997-06-24 1998-12-30 STMicroelectronics S.r.l. Protection circuit for controlling the gate voltage of a high voltage LDMOS transistor
US6172493B1 (en) * 1999-09-04 2001-01-09 Texas Instruments Incorporated Switch-mode power converter circuit
US6859087B2 (en) * 2002-10-31 2005-02-22 International Rectifier Corporation Half-bridge high voltage gate driver providing protection of a transistor
JP2005086931A (ja) * 2003-09-10 2005-03-31 Renesas Technology Corp スイッチング電源装置とそれに用いられる半導体集積回路
US7215189B2 (en) * 2003-11-12 2007-05-08 International Rectifier Corporation Bootstrap diode emulator with dynamic back-gate biasing
US7248093B2 (en) * 2004-08-14 2007-07-24 Distributed Power, Inc. Bipolar bootstrap top switch gate drive for half-bridge semiconductor power topologies
US7456658B2 (en) * 2006-04-07 2008-11-25 International Rectifier Corporation Circuit to optimize charging of bootstrap capacitor with bootstrap diode emulator

Also Published As

Publication number Publication date
US20060044051A1 (en) 2006-03-02
KR20060050626A (ko) 2006-05-19
JP2006087089A (ja) 2006-03-30
JP3937354B2 (ja) 2007-06-27
KR100854146B1 (ko) 2008-08-26

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