DE10196382T1 - Halbleiterchip und Halbleitervorrichtung, für die der Halbleiterchip verwendet wird - Google Patents
Halbleiterchip und Halbleitervorrichtung, für die der Halbleiterchip verwendet wirdInfo
- Publication number
- DE10196382T1 DE10196382T1 DE10196382T DE10196382T DE10196382T1 DE 10196382 T1 DE10196382 T1 DE 10196382T1 DE 10196382 T DE10196382 T DE 10196382T DE 10196382 T DE10196382 T DE 10196382T DE 10196382 T1 DE10196382 T1 DE 10196382T1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor chip
- semiconductor
- chip
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
- G06K19/0775—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card arrangements for connecting the integrated circuit to the antenna
- G06K19/07756—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card arrangements for connecting the integrated circuit to the antenna the connection being non-galvanic, e.g. capacitive
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- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
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- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
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- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000186409 | 2000-06-21 | ||
PCT/JP2001/005282 WO2001099193A1 (en) | 2000-06-21 | 2001-06-20 | Semiconductor chip and semiconductor device using the semiconductor chip |
Publications (1)
Publication Number | Publication Date |
---|---|
DE10196382T1 true DE10196382T1 (de) | 2003-12-04 |
Family
ID=18686575
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10196382T Ceased DE10196382T1 (de) | 2000-06-21 | 2001-06-20 | Halbleiterchip und Halbleitervorrichtung, für die der Halbleiterchip verwendet wird |
Country Status (6)
Country | Link |
---|---|
US (1) | US6838773B2 (de) |
KR (1) | KR100741039B1 (de) |
CN (1) | CN1275328C (de) |
AU (1) | AU7457401A (de) |
DE (1) | DE10196382T1 (de) |
WO (1) | WO2001099193A1 (de) |
Families Citing this family (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7298331B2 (en) * | 2000-03-13 | 2007-11-20 | Rcd Technology, Inc. | Method for forming radio frequency antenna |
US6476775B1 (en) | 2000-03-13 | 2002-11-05 | Rcd Technology Corporation | Method for forming radio frequency antenna |
US7268740B2 (en) * | 2000-03-13 | 2007-09-11 | Rcd Technology Inc. | Method for forming radio frequency antenna |
DE10196382T1 (de) * | 2000-06-21 | 2003-12-04 | Hitachi Maxell | Halbleiterchip und Halbleitervorrichtung, für die der Halbleiterchip verwendet wird |
JP3616605B2 (ja) * | 2002-04-03 | 2005-02-02 | 沖電気工業株式会社 | 半導体装置 |
US7009576B2 (en) * | 2002-06-11 | 2006-03-07 | Michelin Recherche Et Technique S.A. | Radio frequency antenna for a tire and method for same |
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JPH10162112A (ja) | 1996-12-02 | 1998-06-19 | Mitsui High Tec Inc | Icカード |
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JP2000137779A (ja) * | 1998-10-30 | 2000-05-16 | Hitachi Maxell Ltd | 非接触情報媒体とその製造方法 |
DE10196382T1 (de) * | 2000-06-21 | 2003-12-04 | Hitachi Maxell | Halbleiterchip und Halbleitervorrichtung, für die der Halbleiterchip verwendet wird |
-
2001
- 2001-06-20 DE DE10196382T patent/DE10196382T1/de not_active Ceased
- 2001-06-20 KR KR1020027017356A patent/KR100741039B1/ko not_active IP Right Cessation
- 2001-06-20 AU AU74574/01A patent/AU7457401A/en not_active Abandoned
- 2001-06-20 WO PCT/JP2001/005282 patent/WO2001099193A1/ja active Application Filing
- 2001-06-20 CN CNB018109853A patent/CN1275328C/zh not_active Expired - Fee Related
- 2001-06-20 US US10/311,707 patent/US6838773B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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US6838773B2 (en) | 2005-01-04 |
KR20030041870A (ko) | 2003-05-27 |
WO2001099193A1 (en) | 2001-12-27 |
AU7457401A (en) | 2002-01-02 |
CN1436370A (zh) | 2003-08-13 |
US20030116790A1 (en) | 2003-06-26 |
KR100741039B1 (ko) | 2007-07-20 |
CN1275328C (zh) | 2006-09-13 |
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