DE10085347B4 - Verwendung einer MOS-Struktur als Entstörkondensator bei dünnen Gate-Oxiden - Google Patents

Verwendung einer MOS-Struktur als Entstörkondensator bei dünnen Gate-Oxiden Download PDF

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Publication number
DE10085347B4
DE10085347B4 DE10085347T DE10085347T DE10085347B4 DE 10085347 B4 DE10085347 B4 DE 10085347B4 DE 10085347 T DE10085347 T DE 10085347T DE 10085347 T DE10085347 T DE 10085347T DE 10085347 B4 DE10085347 B4 DE 10085347B4
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Germany
Prior art keywords
substrate
gate
mos structure
source
mos
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10085347T
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German (de)
English (en)
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DE10085347T1 (de
Inventor
Ali Portland KESHAVARZI
Vivek K. Beaverton De
Tanay Portland Karnik
Rajendran Hillsboro Nair
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Intel Corp
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Intel Corp
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Publication of DE10085347T1 publication Critical patent/DE10085347T1/de
Application granted granted Critical
Publication of DE10085347B4 publication Critical patent/DE10085347B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Semiconductor Integrated Circuits (AREA)
DE10085347T 1999-12-22 2000-11-13 Verwendung einer MOS-Struktur als Entstörkondensator bei dünnen Gate-Oxiden Expired - Fee Related DE10085347B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/469,406 US6828638B2 (en) 1999-12-22 1999-12-22 Decoupling capacitors for thin gate oxides
US09/469,406 1999-12-22
PCT/US2000/031352 WO2001046989A2 (en) 1999-12-22 2000-11-13 Decoupling capacitors for thin gate oxides

Publications (2)

Publication Number Publication Date
DE10085347T1 DE10085347T1 (de) 2003-01-30
DE10085347B4 true DE10085347B4 (de) 2009-04-09

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE10085347T Expired - Fee Related DE10085347B4 (de) 1999-12-22 2000-11-13 Verwendung einer MOS-Struktur als Entstörkondensator bei dünnen Gate-Oxiden

Country Status (8)

Country Link
US (1) US6828638B2 (enExample)
JP (1) JP4954413B2 (enExample)
KR (1) KR100532208B1 (enExample)
AU (1) AU3072601A (enExample)
DE (1) DE10085347B4 (enExample)
GB (1) GB2374462B (enExample)
HK (1) HK1046776B (enExample)
WO (1) WO2001046989A2 (enExample)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6768165B1 (en) 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US6584017B2 (en) 2001-04-05 2003-06-24 Saifun Semiconductors Ltd. Method for programming a reference cell
US6828654B2 (en) * 2001-12-27 2004-12-07 Broadcom Corporation Thick oxide P-gate NMOS capacitor for use in a phase-locked loop circuit and method of making same
US6700818B2 (en) 2002-01-31 2004-03-02 Saifun Semiconductors Ltd. Method for operating a memory device
US6917544B2 (en) 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US6809386B2 (en) * 2002-08-29 2004-10-26 Micron Technology, Inc. Cascode I/O driver with improved ESD operation
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
JP4046634B2 (ja) * 2003-04-08 2008-02-13 Ｎｅｃエレクトロニクス株式会社 電圧制御型容量素子及び半導体集積回路
US7142464B2 (en) 2003-04-29 2006-11-28 Saifun Semiconductors Ltd. Apparatus and methods for multi-level sensing in a memory array
US7439819B2 (en) * 2003-08-05 2008-10-21 Epson Toyocom Corporation Piezoelectric-oscillator
US7123532B2 (en) 2003-09-16 2006-10-17 Saifun Semiconductors Ltd. Operating array cells with matched reference cells
JP2005175003A (ja) * 2003-12-08 2005-06-30 Matsushita Electric Ind Co Ltd デカップリングコンデンサ及び半導体集積回路
DE102004006484A1 (de) 2004-02-10 2005-08-25 Infineon Technologies Ag Integrierte Schaltungsanordnungen mit ESD-festem Kondensator und Herstellungsverfahren
US7256438B2 (en) * 2004-06-08 2007-08-14 Saifun Semiconductors Ltd MOS capacitor with reduced parasitic capacitance
US7317633B2 (en) 2004-07-06 2008-01-08 Saifun Semiconductors Ltd Protection of NROM devices from charge damage
US7095655B2 (en) 2004-08-12 2006-08-22 Saifun Semiconductors Ltd. Dynamic matching of signal path and reference path for sensing
US7619273B2 (en) * 2004-10-06 2009-11-17 Freescale Semiconductor, Inc. Varactor
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US7535765B2 (en) 2004-12-09 2009-05-19 Saifun Semiconductors Ltd. Non-volatile memory device and method for reading cells
EP1684307A1 (en) 2005-01-19 2006-07-26 Saifun Semiconductors Ltd. Method, circuit and systems for erasing one or more non-volatile memory cells
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
US7804126B2 (en) 2005-07-18 2010-09-28 Saifun Semiconductors Ltd. Dense non-volatile memory array and method of fabrication
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US8116142B2 (en) * 2005-09-06 2012-02-14 Infineon Technologies Ag Method and circuit for erasing a non-volatile memory cell
US7221138B2 (en) 2005-09-27 2007-05-22 Saifun Semiconductors Ltd Method and apparatus for measuring charge pump output current
US7352627B2 (en) 2006-01-03 2008-04-01 Saifon Semiconductors Ltd. Method, system, and circuit for operating a non-volatile memory array
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7358823B2 (en) * 2006-02-14 2008-04-15 International Business Machines Corporation Programmable capacitors and methods of using the same
US7477541B2 (en) * 2006-02-14 2009-01-13 International Business Machines Corporation Memory elements and methods of using the same
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7638835B2 (en) 2006-02-28 2009-12-29 Saifun Semiconductors Ltd. Double density NROM with nitride strips (DDNS)
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7605579B2 (en) 2006-09-18 2009-10-20 Saifun Semiconductors Ltd. Measuring and controlling current consumption and output current of charge pumps
EP2100333A4 (en) * 2007-01-01 2012-05-09 Sandisk Technologies Inc INTEGRATED CIRCUITS AND METHODS WITH TWO PERMANENT CONDENSATE TYPES OF SENSOR
KR100907020B1 (ko) * 2008-02-25 2009-07-08 주식회사 하이닉스반도체 반도체 집적회로의 전원 공급 장치 및 이를 이용한 입력임피던스 제어 방법
FR2982707A1 (fr) * 2011-11-10 2013-05-17 St Microelectronics Sa Condensateur a transistor mos sur soi
KR102143520B1 (ko) * 2014-09-17 2020-08-11 삼성전자 주식회사 펌핑 캐패시터
US9837555B2 (en) 2015-04-15 2017-12-05 Futurewei Technologies, Inc. Apparatus and method for a low loss coupling capacitor
US10510906B2 (en) * 2016-07-01 2019-12-17 Taiwan Semiconductor Manufacturing Company Ltd. MOS capacitor, semiconductor fabrication method and MOS capacitor circuit
JP7027176B2 (ja) * 2018-01-22 2022-03-01 ラピスセミコンダクタ株式会社 半導体装置
KR20210132026A (ko) * 2020-04-22 2021-11-03 양쯔 메모리 테크놀로지스 씨오., 엘티디. 가변 커패시터

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2138206A (en) * 1983-02-23 1984-10-17 Clarion Co Ltd Variable capacitor element
US5032892A (en) * 1988-05-31 1991-07-16 Micron Technology, Inc. Depletion mode chip decoupling capacitor
US5341009A (en) * 1993-07-09 1994-08-23 Harris Corporation Fast charging MOS capacitor structure for high magnitude voltage of either positive or negative polarity
US5965928A (en) * 1996-04-17 1999-10-12 Nec Corporation Semiconductor device with MOS capacitor and fabrication method thereof

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0513680A (ja) * 1990-10-26 1993-01-22 Seiko Epson Corp 半導体装置
US5173835A (en) 1991-10-15 1992-12-22 Motorola, Inc. Voltage variable capacitor
US5405790A (en) 1993-11-23 1995-04-11 Motorola, Inc. Method of forming a semiconductor structure having MOS, bipolar, and varactor devices
US5615096A (en) 1994-06-06 1997-03-25 Motorola, Inc. Direct current power supply conditioning circuit
JPH0883887A (ja) * 1994-09-14 1996-03-26 Nissan Motor Co Ltd 半導体保護装置
US5563779A (en) 1994-12-05 1996-10-08 Motorola, Inc. Method and apparatus for a regulated supply on an integrated circuit
US5883423A (en) * 1996-02-23 1999-03-16 National Semiconductor Corporation Decoupling capacitor for integrated circuit signal driver
US5962887A (en) 1996-06-18 1999-10-05 Micron Technology, Inc. Metal-oxide-semiconductor capacitor
JPH10107235A (ja) * 1996-09-27 1998-04-24 Hitachi Ltd ゲートアレーｌｓｉの構成方法とこれを用いた回路装置
JPH10163421A (ja) * 1996-11-29 1998-06-19 Sanyo Electric Co Ltd 半導体集積回路
JPH10256489A (ja) * 1997-03-14 1998-09-25 Mitsubishi Electric Corp 半導体装置
US5965912A (en) 1997-09-03 1999-10-12 Motorola, Inc. Variable capacitor and method for fabricating the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2138206A (en) * 1983-02-23 1984-10-17 Clarion Co Ltd Variable capacitor element
US5032892A (en) * 1988-05-31 1991-07-16 Micron Technology, Inc. Depletion mode chip decoupling capacitor
US5341009A (en) * 1993-07-09 1994-08-23 Harris Corporation Fast charging MOS capacitor structure for high magnitude voltage of either positive or negative polarity
US5965928A (en) * 1996-04-17 1999-10-12 Nec Corporation Semiconductor device with MOS capacitor and fabrication method thereof

Also Published As

Publication number Publication date
WO2001046989A3 (en) 2002-05-10
KR100532208B1 (ko) 2005-11-29
US6828638B2 (en) 2004-12-07
AU3072601A (en) 2001-07-03
DE10085347T1 (de) 2003-01-30
GB2374462B (en) 2004-05-26
JP4954413B2 (ja) 2012-06-13
GB0215177D0 (en) 2002-08-07
WO2001046989A2 (en) 2001-06-28
HK1046776B (zh) 2004-12-03
HK1046776A1 (en) 2003-01-24
KR20020089311A (ko) 2002-11-29
US20020140109A1 (en) 2002-10-03
GB2374462A (en) 2002-10-16
JP2004501501A (ja) 2004-01-15

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