DE10085347T1 - Entstörkondensator für dünne Gate-Oxide - Google Patents
Entstörkondensator für dünne Gate-OxideInfo
- Publication number
- DE10085347T1 DE10085347T1 DE10085347T DE10085347T DE10085347T1 DE 10085347 T1 DE10085347 T1 DE 10085347T1 DE 10085347 T DE10085347 T DE 10085347T DE 10085347 T DE10085347 T DE 10085347T DE 10085347 T1 DE10085347 T1 DE 10085347T1
- Authority
- DE
- Germany
- Prior art keywords
- interference suppression
- thin gate
- gate oxides
- suppression capacitor
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 title 1
- 230000001629 suppression Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/469,406 | 1999-12-22 | ||
US09/469,406 US6828638B2 (en) | 1999-12-22 | 1999-12-22 | Decoupling capacitors for thin gate oxides |
PCT/US2000/031352 WO2001046989A2 (en) | 1999-12-22 | 2000-11-13 | Decoupling capacitors for thin gate oxides |
Publications (2)
Publication Number | Publication Date |
---|---|
DE10085347T1 true DE10085347T1 (de) | 2003-01-30 |
DE10085347B4 DE10085347B4 (de) | 2009-04-09 |
Family
ID=23863664
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10085347T Expired - Fee Related DE10085347B4 (de) | 1999-12-22 | 2000-11-13 | Verwendung einer MOS-Struktur als Entstörkondensator bei dünnen Gate-Oxiden |
Country Status (8)
Country | Link |
---|---|
US (1) | US6828638B2 (de) |
JP (1) | JP4954413B2 (de) |
KR (1) | KR100532208B1 (de) |
AU (1) | AU3072601A (de) |
DE (1) | DE10085347B4 (de) |
GB (1) | GB2374462B (de) |
HK (1) | HK1046776B (de) |
WO (1) | WO2001046989A2 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6828654B2 (en) | 2001-12-27 | 2004-12-07 | Broadcom Corporation | Thick oxide P-gate NMOS capacitor for use in a phase-locked loop circuit and method of making same |
US6917544B2 (en) | 2002-07-10 | 2005-07-12 | Saifun Semiconductors Ltd. | Multiple use memory chip |
US6809386B2 (en) * | 2002-08-29 | 2004-10-26 | Micron Technology, Inc. | Cascode I/O driver with improved ESD operation |
US7136304B2 (en) | 2002-10-29 | 2006-11-14 | Saifun Semiconductor Ltd | Method, system and circuit for programming a non-volatile memory array |
US7178004B2 (en) | 2003-01-31 | 2007-02-13 | Yan Polansky | Memory array programming circuit and a method for using the circuit |
JP4046634B2 (ja) * | 2003-04-08 | 2008-02-13 | Necエレクトロニクス株式会社 | 電圧制御型容量素子及び半導体集積回路 |
KR100954021B1 (ko) * | 2003-08-05 | 2010-04-20 | 엡슨 토요콤 가부시키가이샤 | 압전발진기 |
JP2005175003A (ja) * | 2003-12-08 | 2005-06-30 | Matsushita Electric Ind Co Ltd | デカップリングコンデンサ及び半導体集積回路 |
DE102004006484A1 (de) * | 2004-02-10 | 2005-08-25 | Infineon Technologies Ag | Integrierte Schaltungsanordnungen mit ESD-festem Kondensator und Herstellungsverfahren |
US7256438B2 (en) * | 2004-06-08 | 2007-08-14 | Saifun Semiconductors Ltd | MOS capacitor with reduced parasitic capacitance |
US7619273B2 (en) * | 2004-10-06 | 2009-11-17 | Freescale Semiconductor, Inc. | Varactor |
US7638850B2 (en) | 2004-10-14 | 2009-12-29 | Saifun Semiconductors Ltd. | Non-volatile memory structure and method of fabrication |
US8053812B2 (en) | 2005-03-17 | 2011-11-08 | Spansion Israel Ltd | Contact in planar NROM technology |
US7804126B2 (en) | 2005-07-18 | 2010-09-28 | Saifun Semiconductors Ltd. | Dense non-volatile memory array and method of fabrication |
US7668017B2 (en) | 2005-08-17 | 2010-02-23 | Saifun Semiconductors Ltd. | Method of erasing non-volatile memory cells |
US8116142B2 (en) * | 2005-09-06 | 2012-02-14 | Infineon Technologies Ag | Method and circuit for erasing a non-volatile memory cell |
US7808818B2 (en) | 2006-01-12 | 2010-10-05 | Saifun Semiconductors Ltd. | Secondary injection for NROM |
US7477541B2 (en) * | 2006-02-14 | 2009-01-13 | International Business Machines Corporation | Memory elements and methods of using the same |
US7358823B2 (en) * | 2006-02-14 | 2008-04-15 | International Business Machines Corporation | Programmable capacitors and methods of using the same |
US8253452B2 (en) | 2006-02-21 | 2012-08-28 | Spansion Israel Ltd | Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same |
US7760554B2 (en) | 2006-02-21 | 2010-07-20 | Saifun Semiconductors Ltd. | NROM non-volatile memory and mode of operation |
US7692961B2 (en) | 2006-02-21 | 2010-04-06 | Saifun Semiconductors Ltd. | Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection |
US7701779B2 (en) | 2006-04-27 | 2010-04-20 | Sajfun Semiconductors Ltd. | Method for programming a reference cell |
EP2100333A4 (de) * | 2007-01-01 | 2012-05-09 | Sandisk Technologies Inc | Integrierte schaltungen und verfahren mit zwei entstörkondensatortypen |
KR100907020B1 (ko) * | 2008-02-25 | 2009-07-08 | 주식회사 하이닉스반도체 | 반도체 집적회로의 전원 공급 장치 및 이를 이용한 입력임피던스 제어 방법 |
FR2982707A1 (fr) * | 2011-11-10 | 2013-05-17 | St Microelectronics Sa | Condensateur a transistor mos sur soi |
KR102143520B1 (ko) * | 2014-09-17 | 2020-08-11 | 삼성전자 주식회사 | 펌핑 캐패시터 |
US9837555B2 (en) * | 2015-04-15 | 2017-12-05 | Futurewei Technologies, Inc. | Apparatus and method for a low loss coupling capacitor |
US10510906B2 (en) * | 2016-07-01 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company Ltd. | MOS capacitor, semiconductor fabrication method and MOS capacitor circuit |
JP7027176B2 (ja) * | 2018-01-22 | 2022-03-01 | ラピスセミコンダクタ株式会社 | 半導体装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59154077A (ja) * | 1983-02-23 | 1984-09-03 | Clarion Co Ltd | 可変容量素子 |
US5032892A (en) * | 1988-05-31 | 1991-07-16 | Micron Technology, Inc. | Depletion mode chip decoupling capacitor |
JPH0513680A (ja) * | 1990-10-26 | 1993-01-22 | Seiko Epson Corp | 半導体装置 |
US5173835A (en) | 1991-10-15 | 1992-12-22 | Motorola, Inc. | Voltage variable capacitor |
US5341009A (en) * | 1993-07-09 | 1994-08-23 | Harris Corporation | Fast charging MOS capacitor structure for high magnitude voltage of either positive or negative polarity |
US5405790A (en) | 1993-11-23 | 1995-04-11 | Motorola, Inc. | Method of forming a semiconductor structure having MOS, bipolar, and varactor devices |
US5615096A (en) | 1994-06-06 | 1997-03-25 | Motorola, Inc. | Direct current power supply conditioning circuit |
JPH0883887A (ja) * | 1994-09-14 | 1996-03-26 | Nissan Motor Co Ltd | 半導体保護装置 |
US5563779A (en) | 1994-12-05 | 1996-10-08 | Motorola, Inc. | Method and apparatus for a regulated supply on an integrated circuit |
US5883423A (en) * | 1996-02-23 | 1999-03-16 | National Semiconductor Corporation | Decoupling capacitor for integrated circuit signal driver |
JP2795259B2 (ja) * | 1996-04-17 | 1998-09-10 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US5962887A (en) | 1996-06-18 | 1999-10-05 | Micron Technology, Inc. | Metal-oxide-semiconductor capacitor |
JPH10107235A (ja) * | 1996-09-27 | 1998-04-24 | Hitachi Ltd | ゲートアレーlsiの構成方法とこれを用いた回路装置 |
JPH10163421A (ja) * | 1996-11-29 | 1998-06-19 | Sanyo Electric Co Ltd | 半導体集積回路 |
JPH10256489A (ja) * | 1997-03-14 | 1998-09-25 | Mitsubishi Electric Corp | 半導体装置 |
US5965912A (en) | 1997-09-03 | 1999-10-12 | Motorola, Inc. | Variable capacitor and method for fabricating the same |
-
1999
- 1999-12-22 US US09/469,406 patent/US6828638B2/en not_active Expired - Lifetime
-
2000
- 2000-11-13 JP JP2001547425A patent/JP4954413B2/ja not_active Expired - Fee Related
- 2000-11-13 DE DE10085347T patent/DE10085347B4/de not_active Expired - Fee Related
- 2000-11-13 WO PCT/US2000/031352 patent/WO2001046989A2/en active IP Right Grant
- 2000-11-13 GB GB0215177A patent/GB2374462B/en not_active Expired - Fee Related
- 2000-11-13 AU AU30726/01A patent/AU3072601A/en not_active Abandoned
- 2000-11-13 KR KR10-2002-7008085A patent/KR100532208B1/ko not_active IP Right Cessation
-
2002
- 2002-11-20 HK HK02108392.5A patent/HK1046776B/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2001046989A2 (en) | 2001-06-28 |
HK1046776B (zh) | 2004-12-03 |
KR20020089311A (ko) | 2002-11-29 |
JP4954413B2 (ja) | 2012-06-13 |
US6828638B2 (en) | 2004-12-07 |
GB2374462A (en) | 2002-10-16 |
DE10085347B4 (de) | 2009-04-09 |
HK1046776A1 (en) | 2003-01-24 |
WO2001046989A3 (en) | 2002-05-10 |
AU3072601A (en) | 2001-07-03 |
JP2004501501A (ja) | 2004-01-15 |
GB2374462B (en) | 2004-05-26 |
US20020140109A1 (en) | 2002-10-03 |
GB0215177D0 (en) | 2002-08-07 |
KR100532208B1 (ko) | 2005-11-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE10085347T1 (de) | Entstörkondensator für dünne Gate-Oxide | |
DE69942361D1 (de) | Rutil-Dielektrikum für Halbleiter-Bauelement | |
DE59901812D1 (de) | Interferenzschraube | |
DE60011911D1 (de) | Handzugangsöffnung | |
DE69842034D1 (de) | Prioritätsschema für einen Zufallszugriffskanal | |
DE60030947D1 (de) | Externes Zubehörteil für modulare Fahrzeugtür | |
DE60223111D1 (de) | Türstruktur für Fahrzeuge | |
DE60010030D1 (de) | Echounterdrückungsvorrichtung | |
DE60105160D1 (de) | Filter und entstörungsanordnung für einen elektrischen motor | |
NO20015722L (no) | Antibakterielle forbindelser | |
DE50003498D1 (de) | Lageranordnung für einen Finger | |
DE60125639D1 (de) | Scharnierstruktur für Motorhaube | |
PT1044916E (pt) | Porta-bobinas | |
DE50006448D1 (de) | Einklemmschutzsystem | |
DE60023093D1 (de) | Inverter-Kanalanordnung für Doppelbläser Konzept | |
DE29813478U1 (de) | Schiebetürenanordnung für Möbel | |
DE60043717D1 (de) | Kassette für Karten | |
DE29804544U1 (de) | Schwelle für zum Außenbereich führende Türen | |
DE29801942U1 (de) | Türheber | |
DE60018104D1 (de) | Dichtung für kühlschranktür | |
DE60004383D1 (de) | Drehschnappverschluss für luftfilterdeckel | |
DE29810559U1 (de) | Falt-Schiebetür | |
DE29901547U1 (de) | Abdeckleiste für plattenförmige Bauelemente | |
ATA25999A (de) | Türfängerverschluss | |
DE29810139U1 (de) | Innenseitige Beschattungsvorrichtung für Fenster |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law |
Ref document number: 10085347 Country of ref document: DE Date of ref document: 20030130 Kind code of ref document: P |
|
8364 | No opposition during term of opposition | ||
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20110531 |