JP4954413B2 - 薄いゲート酸化膜用デカップリング・キャパシタ - Google Patents

薄いゲート酸化膜用デカップリング・キャパシタ Download PDF

Info

Publication number
JP4954413B2
JP4954413B2 JP2001547425A JP2001547425A JP4954413B2 JP 4954413 B2 JP4954413 B2 JP 4954413B2 JP 2001547425 A JP2001547425 A JP 2001547425A JP 2001547425 A JP2001547425 A JP 2001547425A JP 4954413 B2 JP4954413 B2 JP 4954413B2
Authority
JP
Japan
Prior art keywords
diffusion region
conductor
capacitor
diffusion
decoupling capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001547425A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004501501A5 (enExample
JP2004501501A (ja
Inventor
ケシャヴァルジ，アリ
デ，ヴィヴェック・ケイ
カーニック，タナイ
ナイール，ラジェンドラン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of JP2004501501A publication Critical patent/JP2004501501A/ja
Publication of JP2004501501A5 publication Critical patent/JP2004501501A5/ja
Application granted granted Critical
Publication of JP4954413B2 publication Critical patent/JP4954413B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP2001547425A 1999-12-22 2000-11-13 薄いゲート酸化膜用デカップリング・キャパシタ Expired - Fee Related JP4954413B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/469,406 US6828638B2 (en) 1999-12-22 1999-12-22 Decoupling capacitors for thin gate oxides
US09/469,406 1999-12-22
PCT/US2000/031352 WO2001046989A2 (en) 1999-12-22 2000-11-13 Decoupling capacitors for thin gate oxides

Publications (3)

Publication Number Publication Date
JP2004501501A JP2004501501A (ja) 2004-01-15
JP2004501501A5 JP2004501501A5 (enExample) 2008-02-14
JP4954413B2 true JP4954413B2 (ja) 2012-06-13

Family

ID=23863664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001547425A Expired - Fee Related JP4954413B2 (ja) 1999-12-22 2000-11-13 薄いゲート酸化膜用デカップリング・キャパシタ

Country Status (8)

Country Link
US (1) US6828638B2 (enExample)
JP (1) JP4954413B2 (enExample)
KR (1) KR100532208B1 (enExample)
AU (1) AU3072601A (enExample)
DE (1) DE10085347B4 (enExample)
GB (1) GB2374462B (enExample)
HK (1) HK1046776B (enExample)
WO (1) WO2001046989A2 (enExample)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6768165B1 (en) 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US6584017B2 (en) 2001-04-05 2003-06-24 Saifun Semiconductors Ltd. Method for programming a reference cell
US6828654B2 (en) * 2001-12-27 2004-12-07 Broadcom Corporation Thick oxide P-gate NMOS capacitor for use in a phase-locked loop circuit and method of making same
US6700818B2 (en) 2002-01-31 2004-03-02 Saifun Semiconductors Ltd. Method for operating a memory device
US6917544B2 (en) 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US6809386B2 (en) * 2002-08-29 2004-10-26 Micron Technology, Inc. Cascode I/O driver with improved ESD operation
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
JP4046634B2 (ja) * 2003-04-08 2008-02-13 Ｎｅｃエレクトロニクス株式会社 電圧制御型容量素子及び半導体集積回路
US7142464B2 (en) 2003-04-29 2006-11-28 Saifun Semiconductors Ltd. Apparatus and methods for multi-level sensing in a memory array
US7439819B2 (en) * 2003-08-05 2008-10-21 Epson Toyocom Corporation Piezoelectric-oscillator
US7123532B2 (en) 2003-09-16 2006-10-17 Saifun Semiconductors Ltd. Operating array cells with matched reference cells
JP2005175003A (ja) * 2003-12-08 2005-06-30 Matsushita Electric Ind Co Ltd デカップリングコンデンサ及び半導体集積回路
DE102004006484A1 (de) 2004-02-10 2005-08-25 Infineon Technologies Ag Integrierte Schaltungsanordnungen mit ESD-festem Kondensator und Herstellungsverfahren
US7256438B2 (en) * 2004-06-08 2007-08-14 Saifun Semiconductors Ltd MOS capacitor with reduced parasitic capacitance
US7317633B2 (en) 2004-07-06 2008-01-08 Saifun Semiconductors Ltd Protection of NROM devices from charge damage
US7095655B2 (en) 2004-08-12 2006-08-22 Saifun Semiconductors Ltd. Dynamic matching of signal path and reference path for sensing
US7619273B2 (en) * 2004-10-06 2009-11-17 Freescale Semiconductor, Inc. Varactor
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US7535765B2 (en) 2004-12-09 2009-05-19 Saifun Semiconductors Ltd. Non-volatile memory device and method for reading cells
EP1684307A1 (en) 2005-01-19 2006-07-26 Saifun Semiconductors Ltd. Method, circuit and systems for erasing one or more non-volatile memory cells
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
US7804126B2 (en) 2005-07-18 2010-09-28 Saifun Semiconductors Ltd. Dense non-volatile memory array and method of fabrication
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US8116142B2 (en) * 2005-09-06 2012-02-14 Infineon Technologies Ag Method and circuit for erasing a non-volatile memory cell
US7221138B2 (en) 2005-09-27 2007-05-22 Saifun Semiconductors Ltd Method and apparatus for measuring charge pump output current
US7352627B2 (en) 2006-01-03 2008-04-01 Saifon Semiconductors Ltd. Method, system, and circuit for operating a non-volatile memory array
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7358823B2 (en) * 2006-02-14 2008-04-15 International Business Machines Corporation Programmable capacitors and methods of using the same
US7477541B2 (en) * 2006-02-14 2009-01-13 International Business Machines Corporation Memory elements and methods of using the same
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7638835B2 (en) 2006-02-28 2009-12-29 Saifun Semiconductors Ltd. Double density NROM with nitride strips (DDNS)
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7605579B2 (en) 2006-09-18 2009-10-20 Saifun Semiconductors Ltd. Measuring and controlling current consumption and output current of charge pumps
EP2100333A4 (en) * 2007-01-01 2012-05-09 Sandisk Technologies Inc INTEGRATED CIRCUITS AND METHODS WITH TWO PERMANENT CONDENSATE TYPES OF SENSOR
KR100907020B1 (ko) * 2008-02-25 2009-07-08 주식회사 하이닉스반도체 반도체 집적회로의 전원 공급 장치 및 이를 이용한 입력임피던스 제어 방법
FR2982707A1 (fr) * 2011-11-10 2013-05-17 St Microelectronics Sa Condensateur a transistor mos sur soi
KR102143520B1 (ko) * 2014-09-17 2020-08-11 삼성전자 주식회사 펌핑 캐패시터
US9837555B2 (en) 2015-04-15 2017-12-05 Futurewei Technologies, Inc. Apparatus and method for a low loss coupling capacitor
US10510906B2 (en) * 2016-07-01 2019-12-17 Taiwan Semiconductor Manufacturing Company Ltd. MOS capacitor, semiconductor fabrication method and MOS capacitor circuit
JP7027176B2 (ja) * 2018-01-22 2022-03-01 ラピスセミコンダクタ株式会社 半導体装置
KR20210132026A (ko) * 2020-04-22 2021-11-03 양쯔 메모리 테크놀로지스 씨오., 엘티디. 가변 커패시터

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5032892A (en) * 1988-05-31 1991-07-16 Micron Technology, Inc. Depletion mode chip decoupling capacitor
JPH0513680A (ja) * 1990-10-26 1993-01-22 Seiko Epson Corp 半導体装置
JPH0883887A (ja) * 1994-09-14 1996-03-26 Nissan Motor Co Ltd 半導体保護装置
JPH10107235A (ja) * 1996-09-27 1998-04-24 Hitachi Ltd ゲートアレーｌｓｉの構成方法とこれを用いた回路装置
JPH10163421A (ja) * 1996-11-29 1998-06-19 Sanyo Electric Co Ltd 半導体集積回路
JPH10256489A (ja) * 1997-03-14 1998-09-25 Mitsubishi Electric Corp 半導体装置
US5883423A (en) * 1996-02-23 1999-03-16 National Semiconductor Corporation Decoupling capacitor for integrated circuit signal driver

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59154077A (ja) * 1983-02-23 1984-09-03 Clarion Co Ltd 可変容量素子
US5173835A (en) 1991-10-15 1992-12-22 Motorola, Inc. Voltage variable capacitor
US5341009A (en) * 1993-07-09 1994-08-23 Harris Corporation Fast charging MOS capacitor structure for high magnitude voltage of either positive or negative polarity
US5405790A (en) 1993-11-23 1995-04-11 Motorola, Inc. Method of forming a semiconductor structure having MOS, bipolar, and varactor devices
US5615096A (en) 1994-06-06 1997-03-25 Motorola, Inc. Direct current power supply conditioning circuit
US5563779A (en) 1994-12-05 1996-10-08 Motorola, Inc. Method and apparatus for a regulated supply on an integrated circuit
JP2795259B2 (ja) * 1996-04-17 1998-09-10 日本電気株式会社 半導体装置およびその製造方法
US5962887A (en) 1996-06-18 1999-10-05 Micron Technology, Inc. Metal-oxide-semiconductor capacitor
US5965912A (en) 1997-09-03 1999-10-12 Motorola, Inc. Variable capacitor and method for fabricating the same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5032892A (en) * 1988-05-31 1991-07-16 Micron Technology, Inc. Depletion mode chip decoupling capacitor
JPH0513680A (ja) * 1990-10-26 1993-01-22 Seiko Epson Corp 半導体装置
JPH0883887A (ja) * 1994-09-14 1996-03-26 Nissan Motor Co Ltd 半導体保護装置
US5883423A (en) * 1996-02-23 1999-03-16 National Semiconductor Corporation Decoupling capacitor for integrated circuit signal driver
JPH10107235A (ja) * 1996-09-27 1998-04-24 Hitachi Ltd ゲートアレーｌｓｉの構成方法とこれを用いた回路装置
JPH10163421A (ja) * 1996-11-29 1998-06-19 Sanyo Electric Co Ltd 半導体集積回路
JPH10256489A (ja) * 1997-03-14 1998-09-25 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
WO2001046989A3 (en) 2002-05-10
KR100532208B1 (ko) 2005-11-29
US6828638B2 (en) 2004-12-07
AU3072601A (en) 2001-07-03
DE10085347T1 (de) 2003-01-30
GB2374462B (en) 2004-05-26
GB0215177D0 (en) 2002-08-07
DE10085347B4 (de) 2009-04-09
WO2001046989A2 (en) 2001-06-28
HK1046776B (zh) 2004-12-03
HK1046776A1 (en) 2003-01-24
KR20020089311A (ko) 2002-11-29
US20020140109A1 (en) 2002-10-03
GB2374462A (en) 2002-10-16
JP2004501501A (ja) 2004-01-15

Similar Documents

Publication Publication Date Title
JP4954413B2 (ja) 薄いゲート酸化膜用デカップリング・キャパシタ
TW530417B (en) Semiconductor device
US9213415B2 (en) Reference voltage generator
US7145203B2 (en) Graded-junction high-voltage MOSFET in standard logic CMOS
WO1996007205A1 (en) Dynamic threshold voltage mosfet for ultra-low voltage operation
US10026753B2 (en) Method for compensating for temperature effects in semiconductor device structures using a diode structure and a tunable resistor
JPH1168105A (ja) 半導体装置
US20100213545A1 (en) Mos transistor with a p-field implant overlying each end of a gate thereof
US6590247B2 (en) MOS capacitor with wide voltage and frequency operating ranges
CN1825602B (zh) 半导体装置
EP0037103B1 (en) Semiconductor device
JP2002134752A (ja) 半導体装置
US20060220130A1 (en) High breakdown voltage semiconductor device and fabrication method of the same
JP3402043B2 (ja) 電界効果トランジスタ
US8264039B2 (en) High-voltage LDMOSFET and applications therefor in standard CMOS
US5602410A (en) Off-state gate-oxide field reduction in CMOS
CN114497221B (zh) 降低的闪变噪声的晶体管布局
KR930009810B1 (ko) 기판바이어스회로를 구비한 반도체장치
US20030203544A1 (en) CMOS transistor on thin silicon-on-insulator using accumulation as conduction mechanism
JP3472283B2 (ja) 電界効果トランジスタ
US6221707B1 (en) Method for fabricating a transistor having a variable threshold voltage
US20250015180A1 (en) Transistor structure
JPH0575119A (ja) Ｓｏｉ型半導体装置
JP2002343971A (ja) 半導体装置
Kawaguchi et al. 0.8 µm CMOS Process Compatible 60 V–100 m Ω· mm 2 Power MOSFET on Bonded SOI

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071113

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071113

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071217

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110124

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110705

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110929

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111025

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120120

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120221

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120314

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150323

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees