DE10049354B4 - Halbleiterbauelement - Google Patents

Halbleiterbauelement Download PDF

Info

Publication number
DE10049354B4
DE10049354B4 DE10049354A DE10049354A DE10049354B4 DE 10049354 B4 DE10049354 B4 DE 10049354B4 DE 10049354 A DE10049354 A DE 10049354A DE 10049354 A DE10049354 A DE 10049354A DE 10049354 B4 DE10049354 B4 DE 10049354B4
Authority
DE
Germany
Prior art keywords
layer
semiconductor layer
semiconductor
voltage
main electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Revoked
Application number
DE10049354A
Other languages
German (de)
English (en)
Other versions
DE10049354A1 (de
Inventor
Noritoshi Hirano
Katsumi Satoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=18546974&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE10049354(B4) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE10049354A1 publication Critical patent/DE10049354A1/de
Application granted granted Critical
Publication of DE10049354B4 publication Critical patent/DE10049354B4/de
Anticipated expiration legal-status Critical
Revoked legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE10049354A 2000-01-28 2000-10-05 Halbleiterbauelement Revoked DE10049354B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000020407A JP4080659B2 (ja) 2000-01-28 2000-01-28 半導体装置
JP00-20407 2000-01-28

Publications (2)

Publication Number Publication Date
DE10049354A1 DE10049354A1 (de) 2001-08-09
DE10049354B4 true DE10049354B4 (de) 2004-08-05

Family

ID=18546974

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10049354A Revoked DE10049354B4 (de) 2000-01-28 2000-10-05 Halbleiterbauelement

Country Status (4)

Country Link
US (1) US6388306B1 (enExample)
JP (1) JP4080659B2 (enExample)
CH (1) CH695808A5 (enExample)
DE (1) DE10049354B4 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0129066D0 (en) * 2001-12-05 2002-01-23 Koninkl Philips Electronics Nv Rectifying diode
DE10208965B4 (de) * 2002-02-28 2007-06-21 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleiterbauelement für Sperrspannungen über 2000V
CN102832121B (zh) * 2011-06-17 2015-04-01 中国科学院微电子研究所 快恢复二极管制造方法
JP5620421B2 (ja) 2012-02-28 2014-11-05 株式会社東芝 半導体装置
EP2976785A4 (en) * 2013-03-21 2017-01-18 Bourns, Inc. Transient voltage suppressor, design and process
JP6184352B2 (ja) * 2014-03-14 2017-08-23 株式会社東芝 半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3435464A1 (de) * 1984-09-27 1986-04-10 Robert Bosch Gmbh, 7000 Stuttgart Gleichrichterdiode

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2608432C3 (de) * 1976-03-01 1981-07-09 Siemens AG, 1000 Berlin und 8000 München Leistungsdiode
JPS5839070A (ja) * 1981-08-31 1983-03-07 Toshiba Corp 半導体装置
US4623910A (en) * 1982-09-24 1986-11-18 Risberg Robert L Semiconductor device
JPS59189679A (ja) * 1983-04-13 1984-10-27 Hitachi Ltd ダイオ−ド
US5075740A (en) * 1991-01-28 1991-12-24 Sanken Electric Co., Ltd. High speed, high voltage schottky semiconductor device
JPH08125200A (ja) * 1994-10-25 1996-05-17 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH08148699A (ja) 1994-11-21 1996-06-07 Shindengen Electric Mfg Co Ltd 整流ダイオ−ド
US5637898A (en) * 1995-12-22 1997-06-10 North Carolina State University Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance
JP3622405B2 (ja) 1997-02-28 2005-02-23 株式会社日立製作所 半導体スイッチング素子及びｉｇｂｔモジュール

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3435464A1 (de) * 1984-09-27 1986-04-10 Robert Bosch Gmbh, 7000 Stuttgart Gleichrichterdiode

Also Published As

Publication number Publication date
US6388306B1 (en) 2002-05-14
JP2001210651A (ja) 2001-08-03
DE10049354A1 (de) 2001-08-09
JP4080659B2 (ja) 2008-04-23
CH695808A5 (de) 2006-08-31

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8363 Opposition against the patent
8331 Complete revocation