CH695808A5 - Halbleiterbauelement. - Google Patents

Halbleiterbauelement. Download PDF

Info

Publication number
CH695808A5
CH695808A5 CH01976/00A CH19762000A CH695808A5 CH 695808 A5 CH695808 A5 CH 695808A5 CH 01976/00 A CH01976/00 A CH 01976/00A CH 19762000 A CH19762000 A CH 19762000A CH 695808 A5 CH695808 A5 CH 695808A5
Authority
CH
Switzerland
Prior art keywords
layer
semiconductor
semiconductor layer
main electrode
voltage
Prior art date
Application number
CH01976/00A
Other languages
German (de)
English (en)
Inventor
Noritoshi Hirano
Katsumi Satoh
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=18546974&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CH695808(A5) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CH695808A5 publication Critical patent/CH695808A5/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
CH01976/00A 2000-01-28 2000-10-06 Halbleiterbauelement. CH695808A5 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000020407A JP4080659B2 (ja) 2000-01-28 2000-01-28 半導体装置

Publications (1)

Publication Number Publication Date
CH695808A5 true CH695808A5 (de) 2006-08-31

Family

ID=18546974

Family Applications (1)

Application Number Title Priority Date Filing Date
CH01976/00A CH695808A5 (de) 2000-01-28 2000-10-06 Halbleiterbauelement.

Country Status (4)

Country Link
US (1) US6388306B1 (enExample)
JP (1) JP4080659B2 (enExample)
CH (1) CH695808A5 (enExample)
DE (1) DE10049354B4 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0129066D0 (en) * 2001-12-05 2002-01-23 Koninkl Philips Electronics Nv Rectifying diode
DE10208965B4 (de) * 2002-02-28 2007-06-21 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleiterbauelement für Sperrspannungen über 2000V
CN102832121B (zh) * 2011-06-17 2015-04-01 中国科学院微电子研究所 快恢复二极管制造方法
JP5620421B2 (ja) 2012-02-28 2014-11-05 株式会社東芝 半導体装置
US20140284659A1 (en) * 2013-03-21 2014-09-25 Bourns, Inc. Transient Voltage Suppressor, Design and Process
JP6184352B2 (ja) * 2014-03-14 2017-08-23 株式会社東芝 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2608432C3 (de) * 1976-03-01 1981-07-09 Siemens AG, 1000 Berlin und 8000 München Leistungsdiode
JPS5839070A (ja) * 1981-08-31 1983-03-07 Toshiba Corp 半導体装置
US4623910A (en) * 1982-09-24 1986-11-18 Risberg Robert L Semiconductor device
JPS59189679A (ja) * 1983-04-13 1984-10-27 Hitachi Ltd ダイオ−ド
DE3435464A1 (de) * 1984-09-27 1986-04-10 Robert Bosch Gmbh, 7000 Stuttgart Gleichrichterdiode
US5075740A (en) * 1991-01-28 1991-12-24 Sanken Electric Co., Ltd. High speed, high voltage schottky semiconductor device
JPH08125200A (ja) * 1994-10-25 1996-05-17 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH08148699A (ja) 1994-11-21 1996-06-07 Shindengen Electric Mfg Co Ltd 整流ダイオ−ド
US5637898A (en) * 1995-12-22 1997-06-10 North Carolina State University Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance
JP3622405B2 (ja) 1997-02-28 2005-02-23 株式会社日立製作所 半導体スイッチング素子及びｉｇｂｔモジュール

Also Published As

Publication number Publication date
US6388306B1 (en) 2002-05-14
DE10049354B4 (de) 2004-08-05
JP4080659B2 (ja) 2008-04-23
DE10049354A1 (de) 2001-08-09
JP2001210651A (ja) 2001-08-03

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Legal Events

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Owner name: MITSUBISHI DENKI KABUSHIKI KAISHA

Free format text: MITSUBISHI DENKI KABUSHIKI KAISHA#NO. 2-3, MARUNOUCHI 2-CHOME, CHIYODA-KU#TOKYO 100-8310 (JP) -TRANSFER TO- MITSUBISHI DENKI KABUSHIKI KAISHA#NO. 2-3, MARUNOUCHI 2-CHOME, CHIYODA-KU#TOKYO 100-8310 (JP)

PL Patent ceased