DE10006257B8 - Dünnfilmtransistoren mit organisch-anorganischen Hybridmaterialien als halbleitende Kanäle - Google Patents

Dünnfilmtransistoren mit organisch-anorganischen Hybridmaterialien als halbleitende Kanäle Download PDF

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Publication number
DE10006257B8
DE10006257B8 DE10006257A DE10006257A DE10006257B8 DE 10006257 B8 DE10006257 B8 DE 10006257B8 DE 10006257 A DE10006257 A DE 10006257A DE 10006257 A DE10006257 A DE 10006257A DE 10006257 B8 DE10006257 B8 DE 10006257B8
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Germany
Prior art keywords
thin
organic
film transistors
inorganic hybrid
hybrid materials
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Expired - Fee Related
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DE10006257A
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English (en)
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DE10006257B4 (de
DE10006257A1 (de
Inventor
Konstantinos Chondroudis
Christos D. Dimitrakopoulos
Cherie R. Kagan
Ioannis Kymissis
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GlobalFoundries Inc
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International Business Machines Corp
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Publication of DE10006257B4 publication Critical patent/DE10006257B4/de
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Publication of DE10006257B8 publication Critical patent/DE10006257B8/de
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
DE10006257A 1999-03-03 2000-02-11 Dünnfilmtransistoren mit organisch-anorganischen Hybridmaterialien als halbleitende Kanäle Expired - Fee Related DE10006257B8 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/261,515 1999-03-03
US09/261,515 US6180956B1 (en) 1999-03-03 1999-03-03 Thin film transistors with organic-inorganic hybrid materials as semiconducting channels

Publications (3)

Publication Number Publication Date
DE10006257A1 DE10006257A1 (de) 2000-09-14
DE10006257B4 DE10006257B4 (de) 2006-06-29
DE10006257B8 true DE10006257B8 (de) 2006-12-14

Family

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Family Applications (1)

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DE10006257A Expired - Fee Related DE10006257B8 (de) 1999-03-03 2000-02-11 Dünnfilmtransistoren mit organisch-anorganischen Hybridmaterialien als halbleitende Kanäle

Country Status (7)

Country Link
US (1) US6180956B1 (de)
JP (1) JP3872246B2 (de)
KR (1) KR100351651B1 (de)
CN (1) CN1145218C (de)
DE (1) DE10006257B8 (de)
SG (1) SG82680A1 (de)
TW (1) TW461116B (de)

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US7846838B2 (en) 2005-07-29 2010-12-07 Polyic Gmbh & Co. Kg Method for producing an electronic component
US7940340B2 (en) 2005-07-04 2011-05-10 Polyic Gmbh & Co. Kg Multilayer body with electrically controllable optically active systems of layers
US8315061B2 (en) 2005-09-16 2012-11-20 Polyic Gmbh & Co. Kg Electronic circuit with elongated strip layer and method for the manufacture of the same

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JP2004506985A (ja) 2000-08-18 2004-03-04 シーメンス　アクチエンゲゼルシヤフト 封入された有機電子構成素子、その製造方法および使用
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US6838198B2 (en) * 2000-12-07 2005-01-04 Industrial Research Limited Organic/inorganic-oxide multilayer materials
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DE10340643B4 (de) * 2003-09-03 2009-04-16 Polyic Gmbh & Co. Kg Druckverfahren zur Herstellung einer Doppelschicht für Polymerelektronik-Schaltungen, sowie dadurch hergestelltes elektronisches Bauelement mit Doppelschicht
US7242041B2 (en) * 2003-09-22 2007-07-10 Lucent Technologies Inc. Field-effect transistors with weakly coupled layered inorganic semiconductors
DE102004002024A1 (de) * 2004-01-14 2005-08-11 Siemens Ag Organischer Transistor mit selbstjustierender Gate-Elektrode und Verfahren zu dessen Herstellung
EP1724028B1 (de) * 2004-03-10 2012-02-29 Asahi Kasei Kabushiki Kaisha Verfahren zur herstellung eines dünnfilms für eine kondensierte polycyclische aromatische verbindung
JP2007535163A (ja) * 2004-04-27 2007-11-29 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 溶融技術により有機半導体デバイスを形成する方法
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KR20070053157A (ko) * 2004-08-31 2007-05-23 마쯔시다덴기산교 가부시키가이샤 전계 효과 트랜지스터, 그 제조방법 및 그것을 이용한전자기기
JP4622424B2 (ja) * 2004-09-29 2011-02-02 ソニー株式会社 絶縁ゲート型電界効果トランジスタの製造方法
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DE102005042166A1 (de) * 2005-09-06 2007-03-15 Polyic Gmbh & Co.Kg Organisches Bauelement und ein solches umfassende elektrische Schaltung
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WO2017086337A1 (ja) * 2015-11-17 2017-05-26 国立大学法人九州大学 ２次元ペロブスカイト形成用材料、積層体、素子およびトランジスタ
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US9793056B1 (en) 2016-08-10 2017-10-17 The United States Of America As Represented By The Secretary Of The Air Force Method for producing high quality, ultra-thin organic-inorganic hybrid perovskite
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CN108609659A (zh) * 2018-05-31 2018-10-02 青岛科技大学 一种改性的半导电复合材料及其制备方法
CN110767807A (zh) * 2018-07-27 2020-02-07 中国科学院长春光学精密机械与物理研究所 具有通过使用钙钛矿薄单晶形成的光敏场效应晶体管
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Cited By (4)

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Publication number Priority date Publication date Assignee Title
US7812343B2 (en) 2005-04-15 2010-10-12 Polyic Gmbh & Co. Kg Multilayer composite body having an electronic function
US7940340B2 (en) 2005-07-04 2011-05-10 Polyic Gmbh & Co. Kg Multilayer body with electrically controllable optically active systems of layers
US7846838B2 (en) 2005-07-29 2010-12-07 Polyic Gmbh & Co. Kg Method for producing an electronic component
US8315061B2 (en) 2005-09-16 2012-11-20 Polyic Gmbh & Co. Kg Electronic circuit with elongated strip layer and method for the manufacture of the same

Also Published As

Publication number Publication date
US6180956B1 (en) 2001-01-30
JP2000260999A (ja) 2000-09-22
DE10006257B4 (de) 2006-06-29
KR20000062567A (ko) 2000-10-25
SG82680A1 (en) 2001-08-21
DE10006257A1 (de) 2000-09-14
CN1145218C (zh) 2004-04-07
JP3872246B2 (ja) 2007-01-24
CN1266287A (zh) 2000-09-13
KR100351651B1 (ko) 2002-09-11
TW461116B (en) 2001-10-21

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