CN101752499B - 一种无机-并五苯类物质复合半导体材料及其制备方法 - Google Patents
一种无机-并五苯类物质复合半导体材料及其制备方法 Download PDFInfo
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Abstract
一种无机-并五苯类物质复合半导体材料及其制备方法属于导电材料领域。纯净的并五苯及其衍生物应用于电子器件中在较低电位时电流强度小、起始还原电位低。本发明所制备的无机-并五苯类物质复合半导体材料由摩尔配比为10∶1-1∶10的并五苯类物质和无机材料组成。本发明通过将并五苯类物质溶于有机溶剂中,加入无机材料,无机材料与并五苯类物质的摩尔比为10∶1-1∶10,密封,并分散0.5-10h后,去除有机溶剂,得到无机-并五苯类物质复合半导体材料。本发明所提供的复合半导体材料兼顾了n型半导体和p型半导体各自的优点,制备工艺简单,成本低。
Description
技术领域
本发明属于导电材料领域,具体涉及一种无机-并五苯类物质复合半导体材料及其制备方法。
背景技术
并五苯类物质在场效应晶体管中的载流子迁移率达到1.5cm2/(Vs)以上,最高可达到5cm2/(Vs),是有机半导体领域中的研究热点。无机纳米材料呈现小尺寸效应、量子尺寸效应、表面与界面效应和宏观量子隧道效应。当并五苯类物质与无机纳米材料复合后,两种材料的原子电荷分布,分子堆积方式,LUMO能级,HOMO能级,禁带宽度等均会改变,因而复合半导体材料表现出与无机材料和并五苯类物质不同的性能,可应用于场效应晶体管,发光二极管,太阳能电池等领域。如,Minakata等人早在1992年就观察到,将碘掺到并五苯后,并五苯的导电率在240K的温度时显现出反常现象。Matsuo等人在2001年报道,并五苯中掺入碘制成的复合薄膜材料的导电率是纯并五苯薄膜导电率的1010以上。但是目前应用于电子器件中的并五苯类物质多限于纯净的并五苯及其衍生物,因并五苯类物质属于p型半导体,在较低电位时电流强度小、起始还原电位低。
发明内容
本发明的目的在于解决现有技术中的问题,而提供一种无机-并五苯类物质复合半导体材料及其制备方法。
本发明所提供的一种无机-并五苯类物质复合半导体材料由摩尔配比为10∶1-1∶10的并五苯类物质和无机材料组成。
其中,所述的并五苯类物质选自通式I-IX中所示的并五苯类物质:
式中,R1-R8基团独立的选自氢原子、烷基、烷氧基、环烷基、硅烷基、芳基和氨基中的一种;R9基团选自氢原子、苯基、取代苯基、呋喃极、噻吩基、取代噻吩基、喹啉基、吲哚基、炔基或取代炔基中的一种。
所述的无机材料选自卤素单质、碱金属、纳米粒子中的一种。
其中,所述的R1-R8基团独立的优选氢原子、C1-C20的烷基、C1-C20的烷氧基、C4-C7的环烷基及其同分异构基、三甲基硅基、三乙基硅基、苯基、呋喃基、噻吩基、对C1-C20的烷基苯基、(2,6-二甲基)苯基、(2,6-二乙基)苯基、(2,4,6-三甲基)苯基、(2,4,6-三乙基)苯基、对C1-C20的烷氧基苯基、对三甲基硅基苯基、(1-萘)基、(2-萘)基、(1-蒽)基、(2-蒽)基、(9-蒽)基、(1-菲)基、(2-菲)基、(3-菲)基、(4-菲)基、(9-菲)基、二甲基氨基、二乙基氨基中的一种。
所述的R9基团优选氢原子、苯基、对C1-C20的烷基苯基、对C1-C20的烷氧基苯基、(2,6-二甲基)苯基、(2,6-二乙基)苯基、(2,4,6-三甲基)苯基、(2,4,6-三乙基)苯基、对三甲基硅基苯基、2-呋喃基、3-呋喃基、2-噻吩基、3-噻吩基、(5-C1-C20的烷基)噻吩基、2-吡啶基、3-吡啶基、2-喹啉基、1-异喹啉基、2-吲哚基、3-吲哚基、2-苯并呋喃基、3-苯并呋喃基、2-苯并噻吩基、3-苯并噻吩基、乙炔基、(1-丙炔)基、(1-丁炔)基、(1-戊炔)基、(1-己炔)基、(1-庚炔)基、(1-辛炔)基、(1-壬炔)基、(1-癸炔)基、苯乙炔基、三甲基硅基乙炔基、对C1-C20烷基苯乙炔基、对C1-C20烷氧基苯乙炔基、(2-甲基)苯乙炔基、(2,6-二甲基)苯乙炔基、(2-乙基)苯乙炔基、(2,6-二乙基)苯乙炔基、(2,4,6-三甲基)苯乙炔基、(2,4,6-三乙基)苯乙炔基或对三甲基硅基苯乙炔基中的一种。
所述的无机材料优选纳米ZnO、纳米TiO2、纳米CdS、纳米CdO、纳米Fe2O3、纳米SnO2、纳米MnO、纳米ZrO2、纳米FeO、纳米Fe3O4、纳米银、纳米铜、纳米金、纳米MgFe2O4、纳米NiFe2O4、纳米FeFe2O4、纳米CoFe2O4、纳米ZnFe2O4、纳米CuFe2O4、纳米MnFe2O4、纳米BaFe2O4、纳米SrFe2O4、纳米MgFe2O4、I2、Br2、金属钾、金属钠或金属铷中的一种。
本发明所提供的无机-并五苯类物质复合半导体材料的制备方法,包括以下步骤:将并五苯类物质溶于有机溶剂中,加入无机材料,无机材料与并五苯类物质的摩尔比为10∶1-1∶10,密封,并分散0.5-10h后,去除有机溶剂,得到无机-并五苯类物质复合半导体材料。
其中,所述的有机溶剂为氯仿、四氢呋喃、二氯甲烷、苯、甲苯、乙二醇或异丙醇中的一种。
本发明可采用超声分散、物理搅拌或回流分散法将所述的无机材料分散到并五苯类物质的有机溶液中;可通过真空干燥、旋转蒸干或自然干燥去除有机溶剂。
本发明具有以下有益效果:
①本发明工艺简单,成本低,无需苛刻的制备条件,无机材料与并五苯类物质的配比可控。
②本发明采用可作为n型半导体的无机材料与并五苯类物质复合,所制备的复合半导体材料为n型和p型两种半导体的复合,克服了n型半导体和p型半导体各自的不足。
以下结合具体实施方式对本发明作进一步说明。
具体实施方式
下述实施例均在避光条件下进行。
实施例1
纳米TiO2-6,13-双(对丙基苯基)并五苯复合材料的制备
将334mg(0.625mmol)6,13-双(对丙基苯基)并五苯溶于20mL氯仿中,再加入10mg(0.125mmol)TiO2(粒径约为8nm),密封后,常温下,超声分散3h,将所得混合物进行真空去除溶剂,得到纳米TiO2-6,13-双(对丙基苯基)并五苯复合材料。
实施例2
纳米ZnO-6,13-二苯基并五苯复合材料的制备
将284mg(0.626mmol)6,13-二苯基并五苯溶于10mL四氢呋喃中,再加入25mg(0.313mmol)ZnO(粒径约为10nm),密封后,常温下,超声分散6h,将所得混合物进行真空去除溶剂,得到纳米ZnO-6,13-二苯基并五苯复合材料。
实施例3
纳米TiO2-6,13-二苯基并五苯复合材料的制备
将284mg(0.626mmol)6,13-二苯基并五苯溶于20mL氯仿中,再加入10mg(0.125mmol)TiO2(粒径约为8nm),密封后,常温下,超声分散3h,将所得混合物进行真空去除溶剂,得到纳米TiO2-6,13-二苯基并五苯复合材料。
实施例4
纳米TiO2-1,4,8,11-四甲基-6,13-二苯基并五苯复合材料的制备
将153mg(0.3mmol)1,4,8,11-四甲基-6,13-二苯基并五苯溶于20mL氯仿中,再加入24mg(0.3mmol)TiO2(粒径约为8nm),密封后,回流分散3h,将所得混合物进行真空去除溶剂,得到纳米TiO2-1,4,8,11-四甲基-6,13-二苯基复合材料。
实施例5
纳米ZnO-6,13-二苯基并五苯复合材料的制备
将284mg(0.626mmol)6,13-二苯基并五苯溶于30mL二氯甲烷中,再加入10mg(0.125mmol)ZnO(粒径约为10nm),密封后,常温下,超声分散1h,将所得混合物进行真空去除溶剂,得到纳米ZnO-6,13-二苯基并五苯复合材料。
实施例6
I2-6,13-二苯乙炔基并五苯复合材料的制备
将251mg(0.5mmol)6,13-二苯乙炔基并五苯溶于30mL氯仿中,再加入127mg(0.5mmol)I2,密封后,常温下,超声分散0.5h,将所得混合物进行真空去除溶剂,得到I2-6,13-二苯乙炔基并五苯复合材料。
实施例7
纳米Ag-6,13-二苯基并五苯复合材料的制备
将284mg(0.626mmol)6,13-二苯基并五苯溶于20mL氯仿中,再加入68mg(0.626mmol)纳米Ag(粒径约为20nm),密封后,常温下超声分散3h,将所得混合物进行真空去除溶剂,得到纳米Ag-6,13-二苯基并五苯复合材料。
实施例8
纳米Cu-2,3,9,10-四甲氧基并五苯复合材料的制备
将194mg(0.5mmol)2,3,9,10-四甲氧基并五苯溶于20mL甲苯,再加入32mg(0.5mmol)纳米Cu(粒径约为15nm),密封后,回流分散2h,将所得混合物进行真空去除溶剂,得到纳米Cu-2,3,9,10-四甲氧基并五苯复合材料。
实施例9
纳米Ag-6,13-二苯乙炔基并五苯复合材料的制备
将251mg(0.5mmol)6,13-二苯乙炔基并五苯溶于30mL氯仿中,再加入54mg纳米银(粒径约为20nm),密封后,常温下超声分三3h,将所得混合物进行真空去除溶剂,得到纳米Ag-6,13-二苯乙炔基并五苯复合材料。
实施例10
I2-6,13-二苯基并五苯复合材料的制备
将227mg(0.5mmol)6,13-二苯基并五苯溶于30mL氯仿中,再加入25mg(0.1mmol)I2,密封后,常温下超声0.5h,将所得混合物进行真空去除溶剂,得到I2-6,13-二苯基并五苯复合材料。
取实施例(1)制备的TiO2-6,13-双(对丙基苯基)并五苯复合材料与TiO2和纯6,13-双(对丙基苯基)并五苯的循环伏安曲线进行比较,结论如下:1)复合材料的能隙有大幅度减小;2)6,13-双(对丙基苯基)并五苯和TiO2复合后,其Eox onset没有发生明显变化,而且具有较大的电流,体现出了p型有机半导体的性质,Ered onset大幅度提高,体现出TiO2的n型半导体的性质;3)在同样的电压扫描范围内,纯6,13-双(对丙基苯基)并五苯的还原峰电流值与氧化峰电流值之比约为0.166,而复合材料相对应的值约为0.386,说明复合材料在还原电压下的导电能力明显增强,也体现了复合材料的n型半导体性能。综上所述,本发明复合材料克服了n型半导体在氧化区起始氧化电位高、电流密度小和p型半导体在还原区起始还原电位低、电流密度小的缺点,使其在整个扫描电压区间内的导电性能都有大幅度改善。
Claims (4)
1.一种无机-并五苯类物质复合半导体材料,所述的复合半导体材料由摩尔配比为10∶1-1∶10的并五苯类物质和无机材料组成,其特征在于,制备方法包括以下步骤:将并五苯类物质溶于有机溶剂中,加入无机材料,无机材料与并五苯类物质的摩尔比为10∶1-1∶10,密封,并分散0.5-10h后,去除有机溶剂,得到无机-并五苯类物质复合半导体材料;
所述的并五苯类物质选自通式I所示的并五苯类物质:
所述的R1-R8基团独立的选自氢原子、C1-C20的烷基中的一种;R9基团选自苯基、对C1-C20的烷基苯基中的一种;
所述的无机材料选自纳米ZnO、纳米TiO2中的一种;
所述的有机溶剂为氯仿、四氢呋喃、二氯甲烷中的一种。
3.根据权利要求2所述的方法,其特征在于,采用超声分散、物理搅拌或回流分散法将无机材料分散到并五苯类物质的有机溶液中。
4.根据权利要求2所述的方法,其特征在于,采用真空干燥、旋转蒸干或自然干燥去除有机溶剂。
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