CN1993825A - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
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- CN1993825A CN1993825A CNA200580025765XA CN200580025765A CN1993825A CN 1993825 A CN1993825 A CN 1993825A CN A200580025765X A CNA200580025765X A CN A200580025765XA CN 200580025765 A CN200580025765 A CN 200580025765A CN 1993825 A CN1993825 A CN 1993825A
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Abstract
一种半导体装置(1,1A,21,31,41,51),包括:具有形成了第一功能元件(3a)的第一功能面(3F)的第一半导体芯片(3);形成于上述第一功能面上的保护树脂层(12);形成于上述第一功能面上的周缘部,具有:从位于上述保护树脂层的与上述第一功能层相反侧的底面(12B)露出的底露出面(10B,19BB)、和从上述保护树脂层的侧面(12S)露出的侧露出面(10S,19BS),用于与外部电连接的外部连接端子(10,19,52)。
Description
技术领域
本发明涉及一种具有与半导体芯片几乎相同尺寸的半导体装置。
背景技术
近几年,对半导体装置要求小型化和高安装密度。作为满足这种要求的半导体装置,有芯片尺寸封装(CSP,下述专利文献1)或多芯片模块(MCM,下述专利文献2)。
图12是表示具有芯片尺寸封装结构的现有半导体装置的结构的图解剖面图。
该半导体装置71具备半导体芯片72。半导体芯片72的一个表面上形成有功能元件72a,并且以覆盖该功能元件72a的方式形成有绝缘膜73。绝缘膜73上形成有使功能元件72a的电极露出的开口73a。
绝缘膜73之上形成有规定图案的重新布线74。重新布线74经由绝缘膜73的开口73a而与功能元件72a的电极连接。
而且,半导体芯片72的上述一个表面上以覆盖绝缘膜73与重新布线74的方式设置有保护树脂层77。半导体芯片72的侧面与保护树脂层77的侧面位于一个平面上,半导体装置71的外形大致呈直立方体形状。因此,从垂直于半导体芯片72的方向看,半导体装置71的尺寸与半导体芯片72的尺寸几乎一致。从重新布线74的规定部分开始立设有贯通保护树脂层77的柱状外部连接端子75。外部连接端子75的前端部上接合有作为外部连接部件的焊锡球76。
该半导体装置71通过将焊锡球76与形成于安装基板的电极焊盘接合,从而可以安装在安装基板上。
图13是表示具有多芯片模块结构的现有半导体装置的结构的图解剖面图。
该半导体装置81具备:布线基板82、层叠于其上的半导体芯片83以及层叠于半导体芯片83之上的半导体芯片84。半导体芯片83、84的各一个表面上分别形成有功能元件83a、84a。半导体芯片83以形成了功能元件83a的面朝向与布线基板82相反一侧的所谓面朝上的状态,接合在布线基板82之上。
在该半导体芯片83之上,以功能元件84a朝向与半导体芯片83相反一侧的面朝上姿势接合半导体芯片84。在半导体芯片83与半导体芯片84之间安装有层间密封材料86。
从与形成了功能元件83a、84a的面垂直的方向看,半导体芯片83比半导体芯片84大,在半导体芯片83的接合了半导体芯片84的面的周缘部,存在半导体芯片84未对置的区域。该区域中形成有与功能元件83a连接的电极焊盘83b。在半导体芯片84的形成了功能元件84a的面的周缘部,形成有与功能元件84a连接的电极焊盘84b。
从垂直于布线基板82的方向看,布线基板82比半导体芯片83大,在布线基板82的接合了半导体芯片83的面的周缘部,存在半导体芯片83未对置的区域。在该区域中设置有未图示的电极焊盘,该电极焊盘与电极焊盘83b、84b分别经由接合线87、88而被连接。
利用模制树脂89密封了半导体芯片83、84及接合线87、88。
在与布线基板82的接合了半导体芯片83的面相反一侧的面上,设置有作为外部连接部件的焊锡球85。布线基板82的连接了接合线87、88的电极焊盘在布线基板82的表面或内部被重新布线,与焊锡球85连接。
该半导体装置81通过将焊锡球85与形成于安装基板的电极焊盘接合,从而可以安装在安装基板上。
专利文献1:特开2002-118224号公报
专利文献2:特开2000-270721号公报
然而,在图12所示的半导体装置71中,焊锡球76二维地(面阵状)排列在保护树脂层77的与半导体芯片72相反一侧的面(以下称为“底面”)71a上。同样,在上述图13的半导体装置81中,焊锡球85二维地(面阵状)排列在布线基板82的与半导体芯片83、84相反一侧的面(以下称为“底面”)81a上。
因此,在将这些半导体装置71、81安装在安装基板之后,难以确认设置在底面71a、81a内侧区域的焊锡球76、85是否与安装基板上的电极焊盘良好地接合。
而且,在具备焊锡球76、85的构成中,当形成该焊锡球之际,有时会将空隙(void)导入焊锡球76、85。导入了空隙的焊锡球76、85有产生相对于安装基板的连接不良的可能性。
并且,在图13所示的半导体装置81中,为了确保接合线87、88的连接区域,需要比半导体芯片83大的布线基板82。因此,半导体装置81(封装)的尺寸、特别是垂直于布线基板82观察到的尺寸,相对于半导体芯片83、84而言变大。因此,该半导体装置81相对于安装基板的安装面积大。
另外,若利用图12所示的半导体装置71,想要将多个半导体芯片72安装到安装基板上,则由于必须在安装基板上沿横向排列安装多个半导体装置71,故需要大的安装面积。
发明内容
本发明的目的在于,提供一种在与安装基板接合之际可以容易地确认与安装基板的接合状态的半导体装置。
本发明的另一目的在于,提供一种具有芯片尺寸、可以提高外部连接的可靠性的半导体装置。
本发明的又一目的在于,提供一种具有多芯片模块结构、减少了安装面积的半导体装置。
本发明的半导体装置,包括:具有形成了第一功能元件的第一功能面的第一半导体芯片;形成于上述第一功能面上的保护树脂层;和外部连接端子,其形成于上述第一功能面上的周缘部,具有从位于上述保护树脂层的与上述第一功能面侧相反一侧的底面露出的底露出面、和从上述保护树脂层的侧面露出的侧露出面,用于与外部的电连接。
根据本发明,由于外部连接端子在保护树脂层的侧面具有露出面,所以,在将该半导体装置安装到安装基板上时,可以容易地直接目视确认与安装基板上的电极焊盘的连接状态,因此能够容易地确认半导体装置与安装基板的连接(接合)状态。
该半导体装置与安装基板例如可以利用焊锡来连接。在安装基板的电极焊盘上,焊锡可以作为膏状焊锡或其熔融固化物而预先形成为膜状。由于这种形态的焊锡中难以导入空隙,故可以提高外部连接的可靠性。
而且,该半导体装置在外部连接端子处不仅可以经由从底面露出的露出面还可以经由从侧面露出的露出面而与安装基板连接,因此可以确保高的接合强度及连接可靠性。
外部连接端子也可以和第一半导体芯片(第一功能元件)电连接。此时,在第一功能面上可以设置形成有使第一功能元件的电极露出的开口的绝缘膜,外部连接端子也可以经由该绝缘膜的开口而与连接于第一功能元件的电极的重新布线连接。
本发明的半导体装置,还可以含有放热端子,其在上述第一功能面上,形成于比形成有上述外部连接端子的周缘部区域更靠内侧的中央部分区域,在上述保护树脂层的底面具有露出面。
根据该构成,可以经由放热端子使第一半导体芯片中产生的热释放。由于放热端子在保护树脂层的底面具有露出面,故可以有效地放热。放热端子的大小可以设置成不与配置在第一功能面上的周缘部的外部连接端子接触的程度,由此,可以提高放热端子的放热性。
上述放热端子例如也可以通过重新布线,经由形成于上述绝缘膜的开口而电连接上述第一功能元件。此时,放热端子可以是用于向第一功能元件提供电压的电源布线,也可以是用于将第一功能元件接地的接地布线。此时,可以使第一半导体芯片(功能元件)的动作稳定。
放热端子也可以不与上述第一功能元件电连接。
放热端子例如可以由与外部连接端子相同的材料构成,此时,例如可以通过电解电镀一并形成外部连接端子与放热端子。
本发明的半导体装置,还可以包括第二半导体芯片,其具有形成了第二功能元件的第二功能面,使该第二功能面与上述第一功能面对置并与上述第一半导体芯片连接,在垂直于上述第一功能面的平面视图中,具有比上述第一半导体芯片小的尺寸。
本发明的半导体装置,使外部连接端子露出的保护树脂层的底面与安装基板对置而安装在安装基板上。由此,第一半导体芯片及第二半导体芯片成为层叠在安装基板上的状态。因此,与将第一半导体芯片和第二半导体芯片分别沿横向安装在安装基板上相比,该半导体装置可以减小安装面积。
这里,第二半导体芯片在垂直于上述第一功能面的平面视图中,具有被包含于第一半导体芯片所占区域之内的尺寸。因此,不但是多芯片模块,而且还可以将其安装面积降低到垂直于第一功能元件观察到的第一半导体芯片的尺寸。
在上述保护树脂层的上述侧面可以形成有凹部,此时,上述外部连接端子包括沿上述凹部的内面形成、具有与上述凹部的内面形状对应的形状的凹面部。
根据该构成,凹面部沿着形成于保护树脂层侧面的凹部内面形成。因此,在保护树脂层的侧面,外部连接端子的露出面(凹面部的表面)具有曲面(弯曲面或曲面),与外部连接端子的露出面为平坦面的情况相比,其表面积大。由此,可以增大与安装基板的接合面积(焊锡润湿面积),提高接合强度。
上述第一半导体芯片的侧面与上述保护树脂层的侧面实质上位于同一平面。
根据该构成,可以由保护树脂层来保护第一功能面侧的结构,并且可以减小半导体装置的安装面积。
该半导体装置可以由组入了多个第一半导体芯片的半导体基板(例如半导体晶片)来制造。此时,例如该半导体基板可以是:垂直观察该半导体基板,在横跨相邻的第一半导体芯片的区域,形成了与各第一半导体芯片的功能元件电连接且在厚度方向(正交于半导体基板的方向)贯通保护树脂层的柱状电极。
通过沿相邻的第一半导体芯片的边界切断该半导体基板,可以制造本发明的半导体装置。被切断的柱状电极成为外部连接端子。因此,该情况下外部连接端子的露出面中,位于保护树脂层侧面的露出面与保护树脂层的侧面位于同一平面。
而且,在外部连接端子包含形成于上述凹部的凹面部的情况下,例如组入了多个第一半导体芯片的半导体基板可以形成为,垂直观察该半导体基板,在横跨相邻的第一半导体芯片的区域形成了沿厚度方向贯通保护树脂层的贯通孔。此时,形成了沿该贯通孔的内面,与各第一半导体芯片的功能元件电连接,在厚度方向(正交于半导体基板的方向)贯通保护树脂层的导电膜,且贯通孔未被细密地掩盖。
通过沿着相邻的第一半导体芯片的边界切断该半导体基板,使得导电膜成为外部连接端子,可以制造在贯通孔被切断而成的凹部具有凹面部的半导体装置。
此时,由于贯通孔未被导电膜细密地掩盖,故根据这种制造方法,与由上述形成了柱状电极的半导体基板进行制造的方法相比,可以减少沿相邻的第一半导体芯片的边界切断半导体基板之际所用的切割刀片或切割模具等的工具磨耗。
上述外部连接端子可以包括:被上述保护树脂层掩盖的主体部;和形成于上述主体部的表面,具有上述底露出面及上述侧露出面,由焊锡润湿性比上述主体部高的材料构成的被覆膜。
根据该构成,即使在主体部不具有充分的焊锡润湿性的情况下(包括主体部由在其表面易形成氧化膜的材料构成,由于该氧化膜使得焊锡润湿性劣化的情况),通过被覆膜也可以维持良好的焊锡润湿性,从而能够提高与安装基板的连接可靠性。被覆膜例如可以由比主体部难氧化的材料构成。
参照附图,在下面叙述的实施方式的说明中可以更明确本发明的上述或者其他目的、特征以及效果。
附图说明
图1是表示本发明第一实施方式的半导体装置的结构的图解剖面图。
图2是图1所示的半导体装置的图解仰视图。
图3A是用于说明图1及图2所示的半导体装置的制造方法的图解仰视图。
图3B是用于说明图1及图2所示的半导体装置的其他制造方法的图解仰视图。
图3C是用于说明包括具有主体部与被覆膜的外部连接端子的半导体装置的制造方法的图解剖面图。
图3D是用于说明包括具有主体部与被覆膜的外部连接端子的半导体装置的制造方法的图解剖面图。
图4是表示本发明第二实施方式的半导体装置的结构的图解剖面图。
图5是图4所示的半导体装置的图解仰视图。
图6是表示本发明第三实施方式的半导体装置的结构的图解剖面图。
图7是表示图6所示的半导体装置的变形例所涉及的半导体装置的结构的图解剖面图。
图8是表示本发明第四实施方式的半导体装置的结构的图解剖面图。
图9是图8所示的半导体装置的图解仰视图。
图10是图8及图9所示的半导体装置的图解立体图,表示外部连接端子附近。
图11是用于说明图8及图9所示的半导体装置的制造方法的图解仰视图。
图12是表示具有芯片尺寸封装结构的现有半导体装置的结构的图解剖面图。
图13是表示具有多芯片模块结构的现有半导体装置的结构的图解剖面图。
具体实施方式
图1是表示本发明第一实施方式的半导体装置的结构的图解剖面图。图2是其图解仰视图。该半导体装置1是所谓的芯片尺寸封装(CSP),具备半导体芯片2。
在半导体芯片2的一个表面(功能面2F)上形成有功能元件2a。功能元件2a例如为晶体管。功能面2F上形成有覆盖功能元件2a的绝缘膜4。绝缘膜4上形成有使功能元件2a的电极露出的开口4a。
在绝缘膜4之上形成有经由开口4a与功能元件2a中的电极电连接的重新布线5。而且,在绝缘膜4之上以覆盖重新布线5的方式形成有保护树脂层12。半导体芯片2的侧面2S与保护树脂层12的侧面12S实质上处于同一平面,半导体装置1的外形近似为长方体形状。
在保护树脂层12(半导体装置1)的周缘部,立设有从重新布线5开始沿保护树脂层12的厚度方向贯通保护树脂层12、由金属构成的多个外部连接端子10。在互相平行的两个侧面12S上,外部连接端子10分别被配置成距离与这些侧面正交的侧面12S几乎相等。
外部连接端子10形成为方形柱状。外部连接端子10具有:从保护树脂层12的侧面12S露出的侧露出面10S;和从底面12B露出的底露出面10B。侧露出面10S及底露出面10B分别与侧面12S及底面12B几乎位于同一平面。
该半导体装置1能够经由外部连接端子10的侧露出面10S及底露出面10B而安装在安装基板15上。此时,可以通过焊锡16来连接形成于安装基板15表面的电极焊盘15P与侧露出面10S及底露出面10B之间(图1中以双点划线表示安装基板15、电极焊盘15P及焊锡16)。
这里,外部连接端子10形成在保护树脂层12(半导体装置1)的周缘部,而未形成于内侧的区域。而且,外部连接端子10由于在保护树脂层12的侧面12S具有侧露出面10S,故可以直接目视确认外部连接端子10与安装基板15的连接部分,由此,可以容易地确认其连接状态。
焊锡16可以在安装基板15的电极焊盘15P上作为膏状焊锡或其熔融固化物而预先形成为膜状。由于空隙难以被导入这种形态的焊锡16中,故该半导体装置1可以提高外部连接的可靠性。
而且,由于外部连接端子10不仅通过电极焊盘15P与底露出面10B之间的焊锡16,还通过电极焊盘15P与侧露出面10S之间的焊锡16(焊锡焊脚(fillet))与安装基板15连接,所以,可以提高对于安装基板15的接合强度。
图3A是用于说明半导体装置1的制造方法的图解仰视图。半导体装置1可以由组入了多个半导体芯片2的半导体基板制造。作为这种半导体基板,图3A中示出了半导体晶片(以下简单称为“晶片”)W。
垂直观察晶片W,在该晶片W中横跨相邻的半导体芯片2的区域,形成有柱状电极17,其与各半导体芯片2的功能元件2a电连接,沿厚度方向(与晶片W正交的方向)贯通保护树脂层12。柱状电极17例如可以通过电解电镀来形成。
通过沿相邻的半导体芯片2的边界B(图3A中以单点划线表示),利用切割刀片或切割模具等切断该晶片W,可以制造半导体装置1。被切断的柱状电极17成为外部连接端子10。因此,外部连接端子10的侧露出面10S,成为与保护树脂层12的侧面12S处于同一平面的平坦面(参照图2)。
在利用切割刀片进行的晶片W的切割余量大的情况下,如图3B所示,可以在半导体芯片2的邻接部分,设置多对柱状电极17A,其在各半导体芯片2中横跨边界B而形成,在与边界B正交的方向上互相分开。此时,可以将构成各对的柱状电极17A的间隔,设为比利用切割刀片的切割余量窄。若以构成各对的柱状电极17A的间隙包含在切割余量内的方式切断晶片W,则柱状电极17A成为在作为切断面的保护树脂层12的侧面12S具有侧露出面10S的外部连接端子,由此可得到半导体装置1。
也可以在外部连接端子10的侧露出面10S及底露出面10B上,形成由焊锡润湿性比外部连接端子10高的材料构成的被覆膜。即,外部连接端子也可以包括:构成主体部的外部连接端子10相当部;和形成于该主体部表面的被覆膜。
该情况下,例如主体部(外部连接端子10相当部)由易在表面形成氧化膜的材料(例如铜)构成,即使通过形成该氧化膜,也不具有充分的焊锡润湿性的情况下,通过被覆膜,也可以维持良好的焊锡润湿性,由此,可以提高与安装基板15的连接可靠性。
图3C及图3D是用于说明包括具有主体部与被覆膜的外部连接端子的半导体装置的制造方法的图解剖面图。
首先,准备图3A或图3B所示的组入了多个半导体芯片2的晶片W。
然后,在该晶片W中,沿着相邻的半导体芯片2的边界B,例如利用切割刀片如图3C所示,形成从底面12B侧开始,沿厚度方向(与晶片W正交的方向)贯通柱状电极17、保护树脂层12、重新布线5及绝缘膜4,到达晶片W的表层部的沟槽18。在该状态下,柱状电极17具有:向沟槽18的露出面17S(切断面);和从保护树脂层12的底面12B的露出面17B。
接着,将该晶片W浸渍在电镀液中,例如通过无电解电镀在露出面17S、17B上形成依次形成了镍(Ni)层及金(Au)层而构成的被覆膜19B。
然后,例如通过厚度比用于形成沟槽18的切割刀片薄的切割刀片,沿相邻的半导体芯片2的边界B切断晶片W(参照图3D)。此时,切割刀片以不接触被覆膜19B的方式插入沟槽18内。由此,可以得到具备外部端子19的半导体装置1A,所述外部端子19包括:切断柱状电极17而形成的主体部19A、和形成于其表面的被覆膜19B。
也可以利用切割刀片从与形成了沟槽18一侧相反的一侧开始切断晶片W。
在以上的制造方法中,通过不完全切断晶片W,并实施无电解电镀,从而对于多个半导体芯片2可以一并形成被覆膜19B。
被覆膜19B具有:从保护树脂层12的底面12B露出的底露出面19BB、和从保护树脂层12的侧面12S露出的侧露出面19BS。被覆膜19B虽然形成为从主体部19A的表面稍微隆起,但侧露出面19BS实质上与半导体芯片2的侧面2S处于同一平面。
该半导体装置1A能够经由外部连接端子19的侧露出面19BS及底露出面19BB,利用焊锡而安装在安装基板15上。即使在主体部19A不具有充分的焊锡润湿性(有消失的可能性)的情况下,也可以通过被覆膜19B来维持良好的焊锡润湿性,由此,可提高与安装基板15的连接可靠性。
在以上的制造方法中,也可以将晶片W浸渍在焊锡槽(熔融焊锡)中,在露出面17S、17B上形成由焊锡构成的被覆膜,而替代将晶片W浸渍在电镀液中实施无电解电镀。该情况下,可以得到具备在主体部19A上形成了由焊锡构成的被覆膜的外部连接端子的半导体装置。
图4是本发明第二实施方式的半导体装置的图解剖面图,图5是其图解仰视图。在图4及图5中,对于与图1及图2所示的各部分对应的部分赋予和图1及图2相同的参照标记。
该半导体装置21在垂直俯视底面12B的平面视图中,在半导体芯片2的中央部设有放热端子22。放热端子22从形成于绝缘膜4上的重新布线5A开始立设。在绝缘膜4上形成有使功能元件2a的电极露出的开口4b。重新布线5A经由开口4b与功能元件2a的电极电连接。因此,放热端子22与功能元件2a电连接。
放热端子22沿着保护树脂层12的厚度方向贯通保护树脂层12,在保护树脂层12的底面12B具有露出面22B。底面12B与露出面22B几乎处于同一平面。
该半导体装置21能够经由外部连接端子10的底露出面10B、侧露出面10S及放热元件22的露出面22B安装在安装基板上。安装基板上,除了与外部连接端子10对应的电极焊盘以外,还可以设置与放热端子22对应的电极焊盘。该情况下,可以通过焊锡来连接形成于安装基板表面的电极焊盘与侧露出面10S、底露出面10B及露出面22B。
露出面22B大到在安装时露出面22B与底露出面10B及侧露出面10S不会因为焊锡而短路的程度。由于放热端子22形成于保护树脂层12的内侧区域,所以,虽然无法直接目视确认露出面22B与形成于安装基板的电极焊盘的接合部,但通过增大露出面22B,可容易地实现可靠的接合。
该半导体装置21可以经由放热端子10将半导体芯片2产生的热释放。因此,该半导体装置21的放热性高。通过增大露出面22B,可以提高半导体装置21的放热性。
放热端子22可以是用于向功能元件2a供给电压的电源布线,也可以是用于将功能元件2a接地的接地布线。此时,可以使半导体芯片2(功能元件2a)的动作稳定。
放热端子22例如可以由与外部连接端子10相同的材料构成,此时,例如可以通过电解电镀而一并形成外部连接端子10和放热端子22。
图6是表示本发明第三实施方式的半导体装置的结构的图解剖面图。在图6中,对于与图1及图2所示的各部分对应的部分赋予相同于图1及图2的参照标记。该半导体装置31是具备第一半导体芯片32和第二半导体芯片33的多芯片模块。
在第一半导体芯片32的一个表面(第一功能面32F)上形成有第一功能元件32a。第一功能面32F上形成有覆盖功能元件32a的绝缘膜4。绝缘膜4上形成有使功能元件2a的电极露出的开口4a、4c。绝缘膜4之上形成有经由开口4c而与功能元件32a的电极电连接的重新布线5B。
在第二半导体芯片33的一个表面(第二功能面33F)上形成有第二功能元件33a。第二半导体芯片33使第二功能面33F与第一半导体芯片32的第一功能面32F(绝缘膜4)相对,在其与绝缘膜4之间保持规定间隔并进行接合。
第二功能元件33a的电极经由连接部件36与重新布线5B电连接。由此,第一功能元件32a与第二功能元件33a电连接。
在绝缘膜4与第二半导体芯片33的空隙中填充有底层填料层37。
第二半导体芯片33在垂直于第一功能面32F的平面视图中,具有被第一半导体芯片32包含的尺寸,配置于第二半导体芯片33的大致中央部分。在第二半导体芯片33的侧方,以包围第二半导体芯片33的方式配置有外部连接端子10。第二半导体芯片33由保护树脂层12密封,不具有从保护树脂层12露出的露出面。
在垂直于第一功能面32F的平面视图中,通过使第二半导体芯片33具有被包含在第一半导体芯片32所占区域内的尺寸,使得该半导体装置31不仅为多芯片模块,且其安装面积减小到垂直于第一功能面32F观察到的第一半导体芯片32的尺寸。
图7是表示半导体装置31的变形例所涉及的半导体装置的结构的图解剖面图。在图7中,对于与图6所示的各部分对应的部分赋予和图6相同的参照标记。
该半导体装置41取代第二半导体芯片33而具有第二半导体芯片33A。第二半导体芯片33A具有比第二半导体芯片33大的厚度。
第二半导体芯片33A的背面(与第二功能面33F相反一侧的面)从保护树脂层12露出,与底面12B几乎处于同一平面。由此,可以提高第二半导体芯片33A的放热性。
图8是表示本发明第四实施方式的半导体装置的结构的图解剖面图,图9是其图解仰视图。在图8中,对于与图1及图2所示的各部分对应的部分赋予和图1及图2相同的参照标记。
该半导体装置51取代图1所示的半导体装置1的柱状外部连接端子10,而具备膜状的外部连接端子52。
图10是半导体装置51的图解立体图,表示外部连接端子52附近。
在保护树脂层12的侧面12S上,遍及保护树脂层12的厚度方向而形成有半圆柱状的沟槽53。
外部连接端子52包括:沿沟槽53的内面形成的凹面部54;和在保护树脂层12的底面12B上形成于沟槽53附近的平坦部55。凹面部54与平坦部55一体形成。凹面部54与重新布线5电连接,具有与半圆柱状沟槽53的内面对应的作为半圆弧面的弯曲面(露出面)。平坦部55从凹面部54的底面12B侧的前端部向底面12B的内侧方向延伸。
参照图8~图10,该半导体装置51能够经由外部连接端子52的凹面部54及平坦部55而安装在安装基板上。此时,可以利用焊锡来连接形成于安装基板表面的电极焊盘与凹面部54及平坦部55之间。
凹面部54具有弯曲面,从而与形成平坦面的外部连接端子10的侧露出面10S相比,其表面积大。由此,可增大与安装基板的接合面积(焊锡润湿面积),能够提高接合强度。
图11是用于说明半导体装置51的制造方法的图解仰视图。半导体装置51可以由组入了多个半导体芯片2的半导体基板制造。作为这种半导体基板,图11示出了晶片W。
垂直观察晶片W,在该晶片W上,在横跨相邻的半导体芯片2的区域形成有贯通孔56。在贯通孔56的内面及贯通孔56附近的底面12B,形成有与各半导体芯片2的功能元件2a电连接的导电膜57。
导电膜12B横跨相邻的半导体芯片2而形成,沿着与这些半导体芯片2的边界(图11中以单点划线表示)B正交的方向延伸。导电膜57例如可以通过电解电镀形成。贯通孔56未被导电膜57细密地掩盖,在贯通孔56内,导电膜57内侧的区域成为圆柱状的孔。
沿着相邻的半导体芯片2的边界B,通过利用切割刀片或切割模具等切断该晶片W,可以制造半导体装置51。被切断的导电膜57成为外部连接端子52,导电膜57中形成于贯通孔56内面的部分成为凹面部54。
由于贯通孔56未被导电膜57细密地掩盖,故根据这种制造方法,与切断形成了柱状电极17、17A的晶片W的情况(参照图3A及图3B)相比,可以减少沿相邻的半导体芯片2的边界切断晶片W之际所用的切割刀片或切割模具等的工具磨耗。
本发明实施方式的说明如上所述,但本发明以其他方式也可以实施。例如,在以上的实施方式中,外部连接端子10都是经由重新布线5而电连接功能元件2a的电极,但也可以设置在侧面12S及底面12B具有露出面而不与功能元件2a的电极电连接的外部连接端子。这种外部连接端子也有助于对安装基板的接合。
在第二实施方式中,放热端子22也可以不与半导体芯片2电连接。
也可以在一个半导体装置中设置放热端子和第二半导体芯片。此时,例如在图6或图7所示的半导体装置31、41中,也可以在第二半导体芯片33与外部连接端子10的空隙中设置放热端子(比图4及图5所示的放热端子22小的放热端子)。
虽然详细地说明了本发明的实施方式,但这些只是用于明确本发明的技术内容的具体例子,而不应将本发明限定解释为这些具体例子,本发明的主旨及范围仅由本发明的技术方案来限定。
该申请对应于2004年10月14日向日本专利局提出的特愿2004-300532号,该申请的全部公开内容都通过引用而被引入此处。
Claims (6)
1.一种半导体装置,包括:
具有形成了第一功能元件的第一功能面的第一半导体芯片;
形成在上述第一功能面上的保护树脂层;和
外部连接端子,其形成在上述第一功能面上的周缘部,具有从位于上述保护树脂层的与上述第一功能面侧相反一侧的底面露出的底露出面、和从上述保护树脂层的侧面露出的侧露出面,用于和外部的电连接。
2.根据权利要求1所述的半导体装置,其特征在于,还包括放热端子,其在上述第一功能面上,形成于比形成有上述外部连接端子的周缘部区域更靠内侧的中央部区域,在上述保护树脂层的底面具有露出面。
3.根据权利要求1所述的半导体装置,其特征在于,还包括第二半导体芯片,其具有形成了第二功能元件的第二功能面,使该第二功能面与上述第一功能面对置并与上述第一半导体芯片连接,在垂直于上述第一功能面的平面视图中,具有比上述第一半导体芯片小的尺寸。
4.根据权利要求1所述的半导体装置,其特征在于,
在上述保护树脂层的上述侧面形成有凹部,
上述外部连接端子包括沿着上述凹部的内面形成、具有与上述凹部的内面形状对应的形状的凹面部。
5.根据权利要求1所述的半导体装置,其特征在于,上述第一半导体芯片的侧面与上述保护树脂层的侧面实质上位于同一平面。
6.根据权利要求1所述的半导体装置,其特征在于,上述外部连接端子包括:被上述保护树脂层掩盖的主体部;和形成于上述主体部的表面,具有上述底露出面及上述侧露出面,由焊锡润湿性比上述主体部高的材料构成的被覆膜。
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CN100470770C (zh) | 2009-03-18 |
WO2006041013A1 (ja) | 2006-04-20 |
JP4620994B2 (ja) | 2011-01-26 |
KR20070067072A (ko) | 2007-06-27 |
JP2006114696A (ja) | 2006-04-27 |
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