CN1941579B - 升压电路 - Google Patents

升压电路 Download PDF

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Publication number
CN1941579B
CN1941579B CN200610154013XA CN200610154013A CN1941579B CN 1941579 B CN1941579 B CN 1941579B CN 200610154013X A CN200610154013X A CN 200610154013XA CN 200610154013 A CN200610154013 A CN 200610154013A CN 1941579 B CN1941579 B CN 1941579B
Authority
CN
China
Prior art keywords
mos transistors
capacitor
stage
booster circuit
capacitors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200610154013XA
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English (en)
Chinese (zh)
Other versions
CN1941579A (zh
Inventor
山本安卫
县泰宏
白滨政则
川崎利昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seeter Technology Co
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN1941579A publication Critical patent/CN1941579A/zh
Application granted granted Critical
Publication of CN1941579B publication Critical patent/CN1941579B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)
  • Manipulation Of Pulses (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN200610154013XA 2005-09-29 2006-09-19 升压电路 Expired - Fee Related CN1941579B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005284153A JP2007096036A (ja) 2005-09-29 2005-09-29 昇圧回路
JP2005284153 2005-09-29
JP2005-284153 2005-09-29

Publications (2)

Publication Number Publication Date
CN1941579A CN1941579A (zh) 2007-04-04
CN1941579B true CN1941579B (zh) 2012-05-09

Family

ID=37893106

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200610154013XA Expired - Fee Related CN1941579B (zh) 2005-09-29 2006-09-19 升压电路

Country Status (3)

Country Link
US (1) US7602231B2 (enExample)
JP (1) JP2007096036A (enExample)
CN (1) CN1941579B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4867657B2 (ja) * 2006-12-28 2012-02-01 ソニー株式会社 電圧供給回路、表示装置、および電子機器、並びに電圧供給方法
KR101767037B1 (ko) 2010-03-02 2017-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 승압 회로 및 승압 회로를 포함하는 ｒｆｉｄ 태그
US8581658B2 (en) * 2011-04-08 2013-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Charge pump
US8947158B2 (en) 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
TWI663820B (zh) 2013-08-21 2019-06-21 日商半導體能源研究所股份有限公司 電荷泵電路以及具備電荷泵電路的半導體裝置
KR102267237B1 (ko) 2014-03-07 2021-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US9312280B2 (en) 2014-07-25 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9678523B2 (en) * 2015-10-15 2017-06-13 Microsoft Technology Licensing, Llc Self biasing driver circuit for voltage boosting
JP6699194B2 (ja) * 2016-01-21 2020-05-27 凸版印刷株式会社 チャージポンプ
CN107453601B (zh) * 2017-08-22 2023-09-19 合肥博雅半导体有限公司 电荷泵和存储器
CN111371313B (zh) * 2020-04-20 2021-03-26 上海传泰电子科技有限公司 一种高压电荷泵电路
WO2022009731A1 (ja) 2020-07-10 2022-01-13 ソニーグループ株式会社 駆動回路アレイ基板、表示装置および電子機器
CN116137493A (zh) * 2021-11-17 2023-05-19 科奇芯有限公司 电荷泵电路
US11810626B2 (en) * 2022-02-11 2023-11-07 Sandisk Technologies Llc Generating boosted voltages with a hybrid charge pump
KR20230138317A (ko) 2022-03-23 2023-10-05 삼성전자주식회사 전압 생성기 및 이를 포함하는 메모리 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5059815A (en) * 1990-04-05 1991-10-22 Advanced Micro Devices, Inc. High voltage charge pumps with series capacitors
CN1175018A (zh) * 1996-06-12 1998-03-04 冲电气工业株式会社 具有后栅偏压升压的多级升压电路

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4581546A (en) * 1983-11-02 1986-04-08 Inmos Corporation CMOS substrate bias generator having only P channel transistors in the charge pump
JPS61119072A (ja) * 1984-11-15 1986-06-06 Toshiba Corp 半導体容量装置
US5237193A (en) * 1988-06-24 1993-08-17 Siliconix Incorporated Lightly doped drain MOSFET with reduced on-resistance
US7102422B1 (en) * 1994-04-20 2006-09-05 Nippon Steel Corporation Semiconductor booster circuit having cascaded MOS transistors
US6028473A (en) * 1995-03-09 2000-02-22 Macronix International Co., Ltd. Series capacitor charge pump with dynamic biasing
JPH08306870A (ja) * 1995-04-28 1996-11-22 Fuji Xerox Co Ltd 半導体集積昇圧回路装置
US5962887A (en) * 1996-06-18 1999-10-05 Micron Technology, Inc. Metal-oxide-semiconductor capacitor
EP0822601B1 (en) * 1996-07-30 2006-05-24 STMicroelectronics S.r.l. MOS capacitor with wide voltage and frequency operating ranges
JP3323119B2 (ja) * 1997-11-28 2002-09-09 株式会社東芝 半導体集積回路装置
JP3223504B2 (ja) * 1998-03-31 2001-10-29 日本電気株式会社 昇圧回路
US5978283A (en) * 1998-07-02 1999-11-02 Aplus Flash Technology, Inc. Charge pump circuits
JP3850580B2 (ja) * 1999-03-30 2006-11-29 株式会社東芝 半導体装置
US6320796B1 (en) * 2000-11-10 2001-11-20 Marvell International, Ltd. Variable slope charge pump control

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5059815A (en) * 1990-04-05 1991-10-22 Advanced Micro Devices, Inc. High voltage charge pumps with series capacitors
CN1175018A (zh) * 1996-06-12 1998-03-04 冲电气工业株式会社 具有后栅偏压升压的多级升压电路

Also Published As

Publication number Publication date
US20070069803A1 (en) 2007-03-29
US7602231B2 (en) 2009-10-13
CN1941579A (zh) 2007-04-04
JP2007096036A (ja) 2007-04-12

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GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20180524

Address after: Ontario

Patentee after: Seeter technology Co.

Address before: Osaka Japan

Patentee before: Matsushita Electric Industrial Co.,Ltd.

TR01 Transfer of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120509

CF01 Termination of patent right due to non-payment of annual fee